Yu, Edward Tsu-Wei

Article from CaltechAUTHORS

• Stein, B. L. and Yu, E. T., el al. (1998) Deep-level transient spectroscopy of Si/Si1–x–yGexCy heterostructures; Applied Physics Letters; Vol. 73; No. 5; 647-649; 10.1063/1.121935
• Stein, B. L. and Yu, E. T., el al. (1998) Electronic properties of Si/Si1–x–yGexCy heterojunctions; Journal of Vacuum Science and Technology B; Vol. 16; No. 3; 1639-1643; 10.1116/1.589847
• Stein, B. L. and Yu, E. T., el al. (1997) Measurement of band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions; Journal of Vacuum Science and Technology B; Vol. 15; No. 4; 1108-1111; 10.1116/1.589422
• Stein, B. L. and Yu, E. T., el al. (1997) Band offsets in Si/Si1–x–yGexCy heterojunctions measured by admittance spectroscopy; Applied Physics Letters; Vol. 70; No. 25; 3413-3415; 10.1063/1.119188
• Wang, M. W. and Swenberg, J. F., el al. (1994) X-ray photoelectron spectroscopy measurement of valence-band offsets for Mg-based semiconductor compounds; Applied Physics Letters; Vol. 64; No. 25; 3455-3457; 10.1063/1.111239
• Wang, M. W. and Phillips, M. C., el al. (1993) n-CdSe/p-ZnTe based wide band-gap light emitters: Numerical simulation and design; Journal of Applied Physics; Vol. 73; No. 9; 4660-4668; 10.1063/1.352761
• Yu, E. T. and Phillips, M. C., el al. (1992) Interfacial reactions and band offsets in the AlSb/GaSb/ZnTe material system; Physical Review B; Vol. 46; No. 20; 13379-13388; 10.1103/PhysRevB.46.13379
• Ting, D. Z.-Y. and Yu, E. T., el al. (1992) Multiband treatment of quantum transport in interband tunnel devices; Physical Review B; Vol. 45; No. 7; 3583-3592; 10.1103/PhysRevB.45.3583
• Ting, D. Z.-Y. and Yu, E. T., el al. (1991) Band structure effects in interband tunnel devices; Journal of Vacuum Science and Technology B; Vol. 9; No. 4; 2405-2410; 10.1116/1.585711
• Yu, E. T. and Phillips, M. C., el al. (1991) Measurement of the CdSe/ZnTe valence band offset by x-ray photoelectron spectroscopy; Journal of Vacuum Science and Technology B; Vol. 9; No. 4; 2233-2237; 10.1116/1.585726
• Collins, D. A. and Yu, E. T., el al. (1990) Experimental observation of negative differential resistance from an InAs/GaSb interface; Applied Physics Letters; Vol. 57; No. 7; 683-685; 10.1063/1.103591
• Söderström, J. R. and Yu, E. T., el al. (1990) Two-band modeling of narrow band gap and interband tunneling devices; Journal of Applied Physics; Vol. 68; No. 3; 1372-1375; 10.1063/1.346688
• Ting, D. Z.-Y. and Yu, E. T., el al. (1990) Modeling of novel heterojunction tunnel structures; Journal of Vacuum Science and Technology B; Vol. 8; No. 4; 810-816; 10.1116/1.584971
• Yu, E. T. and Croke, E. T., el al. (1990) Measurement of the valence band offset in novel heterojunction systems: Si/Ge (100) and AlSb/ZnTe (100); Journal of Vacuum Science and Technology B; Vol. 8; No. 4; 908-915; 10.1116/1.584941
• Yu, E. T. and Jackson, M. K., el al. (1989) Hole tunneling times in GaAs/AlAs double-barrier structures; Applied Physics Letters; Vol. 55; No. 8; 744-746; 10.1063/1.101793
• Yu, E. T. and Chow, D. H., el al. (1989) Commutativity of the GaAs/AlAs (100) band offset; Journal of Vacuum Science and Technology B; Vol. 7; No. 2; 391-394; 10.1116/1.584758