Nicolet, Marc-Aurele

• Bai, G.; Tsai, C.-J.; et el. (2015) Characterization of Semiconductors by MeV He+ Backscattering Spectrometry, Channeling and Double Crystal Diffraction
• Nicolet, M. A.; Ryser, M.; et el. (2015) Electrical resistivity change in amorphous Ta_42Si_13N_45 films by stress relaxation; Applied Physics A: Materials Science and Processing; Vol. 118; No. 3; 1153-1160; 10.1007/s00339-014-8931-0
• Romano, V.; Meier, M.; et el. (2011) Irradiation of amorphous Ta_(42)Si_(13)N_(45) film with a femtosecond laser pulse; Applied Physics A: Materials Science and Processing; Vol. 104; No. 1; 357-364; 10.1007/s00339-010-6149-3
• Eisen, F. H. and Nicolet, M.-A. (2003) Preferred Position of the Detector for MeV Backscattering Spectrometry; ISBN 0-7354-0149-7; 411-413; 10.1063/1.1619747
• Nicolet, M.-A. and Giauque, P. H. (2001) Highly metastable amorphous or near-amorphous ternary films (mictamict alloys); Microelectronic Engineering; Vol. 55; No. 1-4; 357-367; 10.1016/S0167-9317(00)00468-8
• Nicolet, Marc-A. (2000) Reactively sputtered ternary films of the type TM–Si–N and their properties (TM=early transition metal); Vacuum; Vol. 59; No. 2-3; 716-720; 10.1016/S0042-207X(00)00338-9
• Gasser, S. M.; Kolawa, E.; et el. (1999) Thermal reaction of Pt film with 110 GaN epilayer; Journal of Vacuum Science and Technology A; Vol. 17; No. 5; 2642-2646; 10.1116/1.581924
• Gasser, S. M.; Ruiz, R.; et el. (1999) Instability of Amorphous Ru-Si-O Thin Films under Thermal Oxidation; Journal of the Electrochemical Society; Vol. 146; No. 4; 1546-1548; 10.1149/1.1391802
• Kacsich, T.; Kolawa, E.; et el. (1998) Films of Ni–7 at% V, Pd, Pt and Ta–Si–N as diffusion barriers for copper on Bi2Te3; Journal of Physics D: Applied Physics; Vol. 31; No. 19; 2406-2411
• Grétillat, M.-A.; Linder, C.; et el. (1998) Surface-micromachined Ta–Si–N beams for use in micromechanics; Journal of Micromechanics and Microengineering; Vol. 8; No. 2; 88-90
• Grétillat, M.-A.; Linder, C.; et el. (1998) Surface-micromachined Ta-Si-N beams for use in micromechanics; Journal of Micromechanics and Microengineering; Vol. 8; No. 2; 88-90; 10.1088/0960-1317/8/2/011
• Gasser, S. M.; Bachli, A.; et el. (1998) Reaction sequence of thin Ni films with (001) 3C-SiC; 10.1109/MAM.1998.887570
• Im, S.; Song, J. H.; et el. (1997) SiGeC alloy layer formation by high-dose C + implantations into pseudomorphic metastable Ge0.08Si0.92 on Si(100); Journal of Applied Physics; Vol. 81; No. 4; 1700-1703; 10.1063/1.364027
• Sun, X.; Schneider, S.; et el. (1996) Oxidation and crystallization of an amorphous Zr60Al15Ni25 alloy; Journal of Materials Research; Vol. 11; No. 11; 2738-2743
• Reid, J. S.; Kolawa, E.; et el. (1996) Amorphous (Mo, Ta, or W)–Si–N diffusion barriers for Al metallizations; Journal of Applied Physics; Vol. 79; No. 2; 1109-1117; 10.1063/1.360909
• Dauksher, W. J.; Resnick, D. J.; et el. (1995) Method for fabricating a low stress x-ray mask using annealable amorphous refractory compounds; Journal of Vacuum Science and Technology B; Vol. 13; No. 6; 3103-3108; 10.1116/1.588331
• McLane, G. F.; Casas, L.; et el. (1994) Reactive ion etching of Ta–Si–N diffusion barriers in CF_(4)+O_(2); Journal of Vacuum Science and Technology B; Vol. 12; No. 4; 2352-2355; 10.1116/1.587763
• Lie, D. Y. C.; Vantomme, A.; et el. (1993) Damage and strain in epitaxial GexSi1–x films irradiated with Si; Journal of Applied Physics; Vol. 74; No. 10; 6039-6045; 10.1063/1.355219
• Liu, W. S.; Chen, J. S.; et el. (1992) Instability of a GexSi1−xO2 film on a GexSi1−x layer; Journal of Applied Physics; Vol. 72; No. 9; 4444-4446; 10.1063/1.352211
• Workman, T. W. and Nicolet, M-A. (1992) D(d,p)T fusion induced by heavy-ion irradiation of TiD1.7; Physical Review B; Vol. 46; No. 13; 8589-8592; 10.1103/PhysRevB.46.8589
• Bai, G. and Nicolet, M.-A. (1992) Generation and recovery of strain in (28)Si-implanted pseudomorphic GeSi films on Si(100); Journal of Applied Physics; Vol. 71; No. 9; 4227-4229; 10.1063/1.350802
• Liu, W. S.; Lee, E. W.; et el. (1992) Wet oxidation of GeSi at (700)C; Journal of Applied Physics; Vol. 71; No. 8; 4015-4018; 10.1063/1.350847
• Liu, W. S.; Lee, E. W.; et el. (1992) Importance of sample preheating in oxidation of GexSi1−x; Journal of Applied Physics; Vol. 71; No. 7; 3626-3627; 10.1063/1.350922
• Bai, G. and Nicolet, M.-A. (1992) Damage production and annealing in 28Si-implanted CoSi2/Sim(111) heterostructures; Journal of Applied Physics; Vol. 71; No. 2; 670-675; 10.1063/1.351325
• Bai, G. and Nicolet, M.-A. (1991) Defect production in Si(100) by 19F, 28Si, 40Ar, and 131Xe implantation at room temperature; Journal of Applied Physics; Vol. 70; No. 7; 3551-3555; 10.1063/1.349251
• Chen, J. S.; Kolawa, E.; et el. (1991) Epitaxial growth of GaAs by solid-phase transport; Applied Physics Letters; Vol. 59; No. 13; 1597-1599; 10.1063/1.106267
• Pokela, P. J.; Reid, J. S.; et el. (1991) Thermal oxidation of amorphous ternary Ta36Si14N50 thin films; Journal of Applied Physics; Vol. 70; No. 5; 2828-2832; 10.1063/1.349345
• Kolawa, E.; Chen, J. S.; et el. (1991) Tantalum-based diffusion barriers in Si/Cu VLSI metallizations; Journal of Applied Physics; Vol. 70; No. 3; 1369-1373; 10.1063/1.349594
• Bai, G. and Nicolet, M.-A. (1991) Defects production and annealing in self-implanted Si; Journal of Applied Physics; Vol. 70; No. 2; 649-655; 10.1063/1.349668
• Bai, G.; Nicolet, M.-A.; et el. (1991) Elastic and thermal properties of mesotaxial CoSi2 layers on Si; Journal of Applied Physics; Vol. 69; No. 9; 6451-6455
• Tsai, C. J.; Dommann, A.; et el. (1991) Self-consistent determination of the perpendicular strain profile of implanted Si by analysis of x-ray rocking curves; Journal of Applied Physics; Vol. 69; No. 4; 2076-2079; 10.1063/1.348733
• Morishita, K.; Molarius, J. M.; et el. (1991) Arsenic loss during palladium reaction with bulk and thin film gallium arsenide; Thin Solid Films; Vol. 196; No. 1; 85-93; 10.1016/0040-6090(91)90176-X
• Mahan, John E.; Geib, Kent M.; et el. (1991) Reflection high-energy electron diffraction patterns of CrSi_2 films on (111) silicon; Journal of Vacuum Science and Technology B; Vol. 9; No. 1; 64-68; 10.1116/1.585791
• Vu, Quat T.; Pokela, P. J.; et el. (1990) Thermal oxidation of reactively sputtered amorphous W_(80)N_(20) films; Journal of Applied Physics; Vol. 68; No. 12; 6420-6423; 10.1063/1.346863
• Bai, G.; Nicolet, M-A.; et el. (1990) Radiation damage in ReSi2 by a MeV 4He beam; Applied Physics Letters; Vol. 57; No. 16; 1657-1659; 10.1063/1.104134
• Molarius, J. M.; Morishita, K.; et el. (1990) Encapsulation of GaAs and GaAs-Pd in furnace annealing; Vacuum; Vol. 41; No. 4-6; 1029-1032; 10.1016/0042-207X(90)93852-A
• Bai, G.; Nicolet, M.-A.; et el. (1990) Channeling of MeV ions in polyatomic epitaxial films: ReSi2 on Si(100); Physical Review B; Vol. 41; No. 13; 8603-8607; 10.1103/PhysRevB.41.8603
• Kolawa, E.; Molarius, J. M.; et el. (1990) Amorphous Ta–Si–N thin‐film alloys as diffusion barrier in Al/Si metallizations; Journal of Vacuum Science and Technology A; Vol. 8; No. 3; 3006-3010; 10.1116/1.576620
• Bai, Gang; Nicolet, Marc-A.; et el. (1989) Strain in epitaxial CoSi2 films on Si (111) and inference for pseudomorphic growth; Applied Physics Letters; Vol. 55; No. 18; 1874-1876; 10.1063/1.102327
• Ma, E.; Nicolet, M-A.; et el. (1989) NiAl3 formation in Al/Ni thin-film bilayers with and without contamination; Journal of Applied Physics; Vol. 65; No. 7; 2703-2710; 10.1063/1.342756
• Thuillard, M.; Tran, L. T.; et el. (1989) Thermal reaction of Al/Ti bilayers with contaminated interface; Journal of Applied Physics; Vol. 65; No. 6; 2553-2556; 10.1063/1.342780
• Ma, E.; Workman, T. W.; et el. (1989) Ion mixing of metal/Al bilayers near 77 K; Applied Physics Letters; Vol. 54; No. 5; 413-415; 10.1063/1.100937
• Tandon, J. L.; Madok, J. H.; et el. (1989) Sequential nature of damage annealing and activation in implanted GaAs; Applied Physics Letters; Vol. 54; No. 5; 448-450; 10.1063/1.100948
• Kolawa, E.; Garland, C.; et el. (1988) Indium oxide diffusion barriers for Al/Si metallizations; Applied Physics Letters; Vol. 53; No. 26; 2644-2646; 10.1063/1.100541
• Vreeland, T., Jr.; Dommann, A.; et el. (1988) X-Ray Diffraction Determination of Stresses in Thin Films; ISBN 9781558990036; 3-12; 10.1557/PROC-130-3
• Ma, W.; Meng, W. J.; et el. (1988) Simultaneous planar growth of amorphous and crystalline Ni silicides; Applied Physics Letters; Vol. 53; No. 21; 2033-2035; 10.1063/1.100494
• So, F. C. T.; Kolawa, E.; et el. (1988) WxN1–x alloys as diffusion barriers between Al and Si; Journal of Applied Physics; Vol. 64; No. 5; 2787-2789; 10.1063/1.341579
• Zhao, X.-A.; So, F. C. T.; et el. (1988) TiAl3 formation by furnace annealing of Ti/Al bilayers and the effect of impurities; Journal of Applied Physics; Vol. 63; No. 8; 2600-2607; 10.1063/1.340981
• Ma, E.; Kim, S.-J.; et el. (1988) Ion mixing and thermochemical properties of tracers in Ag; Journal of Applied Physics; Vol. 63; No. 7; 2449-2451; 10.1063/1.341018
• Kim, S.-J.; Nicolet, M-A.; et el. (1988) Low-temperature ion-beam mixing in metals; Physical Review B; Vol. 37; No. 1; 38-49; 10.1103/PhysRevB.37.38
• Lim, B. S.; Ma, E.; et el. (1988) Silicon resistor to measure temperature during rapid thermal annealing; Review of Scientific Instruments; Vol. 59; No. 1; 182-183; 10.1063/1.1140004
• Bai, Gang; Nicolet, Marc-A.; et el. (1988) Thermal Strain Measurements in Epitaxial CoSi_2/Si by Double Crystal X-Ray Diffraction; ISBN 9781558990036; 35-40; 10.1557/PROC-130-35
• So, F. C. T.; Kolawa, E.; et el. (1987) Summary Abstract: Reactively sputtered RuO2 and Mo–O diffusion barriers; Journal of Vacuum Science and Technology B; Vol. 5; No. 6; 1748-1749; 10.1116/1.583631
• Zhao, X.-A.; Yang, H.-Y.; et el. (1987) Kinetics of NiAl3 growth induced by steady-state thermal annealing at the Ni- interface; Journal of Applied Physics; Vol. 62; No. 5; 1821-1825; 10.1063/1.339563
• Lim, B. S.; Ma, E.; et el. (1987) Kinetics and moving species during Co2Si formation by rapid thermal annealing; Journal of Applied Physics; Vol. 61; No. 11; 5027-5030; 10.1063/1.338324
• Workman, T. W.; Cheng, Y. T.; et el. (1987) Effect of thermodynamics on ion mixing; Applied Physics Letters; Vol. 50; No. 21; 1485-1487; 10.1063/1.98253
• Cheng, Y.-T.; Nicolet, M.-A.; et el. (1987) From cascade to spike — a fractal-geometry approach; Physical Review Letters; Vol. 58; No. 20; 2083-2086; 10.1103/PhysRevLett.58.2083
• Kao, Y. C.; Wang, K. L.; et el. (1987) Study of CoSi2/Si strained layers grown by molecular beam epitaxy; Journal of Vacuum Science and Technology B; Vol. 5; No. 3; 745-748; 10.1116/1.583781
• Kolawa, E.; So, F. C. T.; et el. (1987) Reactively sputtered RuO2 diffusion barriers; Applied Physics Letters; Vol. 50; No. 13; 854-855; 10.1063/1.98012
• Banwell, T.; Nicolet, M-A.; et el. (1987) Chemical effects in ion mixing of a ternary system (metal-SiO_2); Applied Physics Letters; Vol. 50; No. 10; 571-573; 10.1063/1.98138
• Bai, G.; Jamieson, D. N.; et el. (1987) Defects Annealing of Si^+ Implanted GaAs at RT and 100°C; ISBN 9780931837609; 67-72; 10.1557/PROC-93-67
• Banwell, Thomas and Nicolet, M.-A. (1987) Distinguishing anisotropic from isotropic transport in ion mixing of metal/oxide bilayers; Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms; Vol. 19-20; 704-707; 10.1016/S0168-583X(87)80141-6
• Bai, Gang; Jamieson, David N.; et el. (1987) Misoriented Epitaxial Growth of (111)CoSi_2 on Offset (111)Si Substrates; ISBN 9780931837708; 259-264; 10.1557/PROC-102-259
• Zhao, X.-A.; Kolawa, E.; et el. (1986) Reaction of thin metal films with crystalline and amorphous Al2O3; Journal of Vacuum Science and Technology A; Vol. 4; No. 6; 3139-3141; 10.1116/1.573642
• So, F. C. T.; Kolawa, E.; et el. (1986) Thermal stability and nitrogen redistribution in the /Ti/W-N/ AI metallization scheme; Journal of Vacuum Science and Technology A; Vol. 4; No. 6; 3078-3081; 10.1116/1.573631
• So, F. C. T.; Kolawa, E.; et el. (1986) Thermal stability and nitrogen redistribution in the〈Si〉/Ti/W–N/Al metallization scheme; Journal of Vacuum Science and Technology A; Vol. 4; No. 6; 3078-3081; 10.1116/1.573631
• Cheng, Y.-T.; Zhao, X.-A.; et el. (1986) Correlation between the cohesive energy and the onset of radiation-enhanced diffusion in ion mixing; Journal of Applied Physics; Vol. 60; No. 7; 2615-2617; 10.1063/1.337131
• Kattelus, H. P.; Tandon, J. L.; et el. (1986) Bias-induced stress transitions in sputtered TiN films; Journal of Vacuum Science and Technology A; Vol. 4; No. 4; 1850-1854; 10.1116/1.573776
• Banwell, Thomas; Nicolet, M.-A.; et el. (1986) Effect of dose rate on ion beam mixing in Nb-Si; Applied Physics Letters; Vol. 48; No. 22; 1519-1521; 10.1063/1.96854
• Banwell, T. C.; Zhao, X.-A.; et el. (1986) Effects of ion irradiation on conductivity of CrSi_2 thin films; Journal of Applied Physics; Vol. 59; No. 9; 3077-3080; 10.1063/1.336931
• So, F. C. T.; Lien, C.-D.; et el. (1985) Formation and electrical properties of Hf Si_2 grown thermally from evaporated Hf and Si films; Journal of Vacuum Science and Technology A; Vol. 3; No. 6; 2284-2288; 10.1116/1.572909
• Kattelus, H. P.; Kolawa, E.; et el. (1985) Sputtered W–N diffusion barriers; Journal of Vacuum Science and Technology A; Vol. 3; No. 6; 2246-2254; 10.1116/1.572901
• Cheng, Y.-T.; Johnson, W. L.; et el. (1985) Dominant moving species in the formation of amorphous NiZr by solid-state reaction; Applied Physics Letters; Vol. 47; No. 6; 800-802; 10.1063/1.95988
• Affolter, K.; Zhao, X.-A.; et el. (1985) Transition-metal silicides formed by ion mixing and by thermal annealing: Which species moves?; Journal of Applied Physics; Vol. 58; No. 8; 3087-3083; 10.1063/1.335809
• Van Rossum, M.; Cheng, Y-T.; et el. (1985) Correlation between cohesive energy and mixing rate in ion mixing of metallic bilayers; Applied Physics Letters; Vol. 46; No. 6; 610-612; 10.1063/1.95557
• Hamdi, A. H.; Speriosu, V. S.; et el. (1985) Analyses of metalorganic chemical-vapor-deposition-grown AlxGa1−xAs/GaAs strained superlattice structures by backscattering spectrometry and x-ray rocking curves; Journal of Applied Physics; Vol. 57; No. 4; 1400-1402; 10.1063/1.334496
• Hamdi, A. H.; Speriosu, V. S.; et el. (1985) Combined use of ion backscattering and x-ray rocking curves in the analyses of superlattices; Physical Review B; Vol. 31; No. 4; 2343-2347; 10.1103/PhysRevB.31.2343
• Speriosu, V. S.; Nicolet, M.-A.; et el. (1985) Interfacial strain in AlxGa1–xAs layers on GaAs; Journal of Applied Physics; Vol. 57; No. 4; 1377-1379; 10.1063/1.334490
• Pan, C. K.; Zheng, D. C.; et el. (1985) Structural study of GaSb/AlSb strained-layer superlattice; Physical Review B; Vol. 31; No. 3; 1270-1277; 10.1103/PhysRevB.31.1270
• Lien, C.-D.; Nicolet, M.-A.; et el. (1985) A structure marker study for Pd_2Si formation: Pd moves in epitaxial Pd_2Si; Journal of Applied Physics; Vol. 57; No. 2; 224-226; 10.1063/1.334792
• Ho, K. T.; Lien, C.-D.; et el. (1985) An inert marker study for palladium silicide formation: Si moves in polycrystalline Pd2Si; Journal of Applied Physics; Vol. 57; No. 2; 227-231; 10.1063/1.334793
• Kim, Sung-Joon; Nicolet, M-A.; et el. (1985) Low-temperature ion beam mixing of Pt and Si markers in Ge; Applied Physics Letters; Vol. 46; No. 2; 154-156; 10.1063/1.95719
• Ho, K. T.; Lien, C. D.; et el. (1985) Palladium silicide formation under the influence of nitrogen and oxygen impurities; Journal of Applied Physics; Vol. 57; No. 2; 232-236; 10.1063/1.334794
• Zur, A.; McGill, T. C.; et el. (1985) Transition-metal silicides lattice-matched to silicon; Journal of Applied Physics; Vol. 57; No. 2; 600-603; 10.1063/1.334743
• Zhu, M. F.; Suni, I.; et el. (1984) Reaction of amorphous Ni-W and Ni-N-W films with substrate silicon; Journal of Applied Physics; Vol. 56; No. 10; 2740-2745; 10.1063/1.333804
• Lien, C.-D.; So, F. C. T.; et el. (1984) An improved forward I-V method for nonideal Schottky diodes with high series resistance; IEEE Transactions on Electron Devices; Vol. 31; No. 10; 1502-1503; 10.1109/T-ED.1984.21739
• Lien, C. D. and Nicolet, M-A. (1984) Impurity effects in transition metal silicides; Journal of Vacuum Science and Technology B; Vol. 2; No. 4; 738-747; 10.1116/1.582872
• Van Rossum, M.; Nicolet, M-A.; et el. (1984) Magnetic properties of amorphous thin films produced by ion mixing; Journal of Applied Physics; Vol. 56; No. 4; 1032-1035; 10.1063/1.334096
• Ho, K. T.; Suni, I.; et el. (1984) Substrate orientation dependence of enhanced epitaxial regrowth of silicon; Journal of Applied Physics; Vol. 56; No. 4; 1207-1212; 10.1063/1.334050
• Speriosu, V. S.; Nicolet, M.-A.; et el. (1984) Depth profiles of perpendicular and parallel strain in a GaAsxP1−x/GaP superlattice; Applied Physics Letters; Vol. 45; No. 3; 223-225; 10.1063/1.95190
• Suni, I.; Shreter, U.; et el. (1984) Influence of F and Cl on the recrystallization of ion-implanted amorphous Si; Journal of Applied Physics; Vol. 56; No. 2; 273-278; 10.1063/1.333957
• Cheng, Y-T.; Van Rossum, M.; et el. (1984) Influence of chemical driving forces in ion mixing of metallic bilayers; Applied Physics Letters; Vol. 45; No. 2; 185-187; 10.1063/1.95163
• Lien, C.-D. and Nicolet, M-A. (1984) Mathematical model for a radioactive marker in silicide formation; Journal of Applied Physics; Vol. 55; No. 12; 4187-4193; 10.1063/1.333037
• Van Rossum, M.; Nicolet, M-A.; et el. (1984) Amorphization of Hf-Ni films by solid-state reaction; Physical Review B; Vol. 29; No. 10; 5498-5504; 10.1103/PhysRevB.29.5498
• Shreter, U.; So, Frank C. T.; et el. (1984) Chromium silicide formation by ion mixing; Journal of Applied Physics; Vol. 55; No. 10; 3500-3504; 10.1063/1.332938
• Kung, K. T-Y.; Suni, I.; et el. (1984) Electrical characteristics of amorphous molybdenum-nickel contacts to silicon; Journal of Applied Physics; Vol. 55; No. 10; 3882-3885; 10.1063/1.332905
• Bartur, M. and Nicolet, M.-A. (1984) Utilization of NiSi_2 as an interconnect material for VLSI; IEEE Electron Device Letters; Vol. 5; No. 3; 88-90; 10.1109/EDL.1984.25841
• Bartur, M. and Nicolet, M-A. (1984) Self-confined metallic interconnects for very large scale integration; Applied Physics Letters; Vol. 44; No. 2; 263-264; 10.1063/1.94692
• Barcz, A. J.; Paine, B. M.; et el. (1984) Ion mixing of markers in SiO2 and Si; Applied Physics Letters; Vol. 44; No. 1; 45-47; 10.1063/1.94546
• Hamdi, A. H.; Tandon, J. L.; et el. (1984) Strain and Damage Measurements in Ion Implanted Al_xGa_(1−x)As/GaAs Superlattices; ISBN 9780931837029; 319-325; 10.1557/PROC-37-319
• Prabhakar, A.; McGill, T. C.; et el. (1983) Platinum diffusion into silicon from PtSi; Applied Physics Letters; Vol. 43; No. 12; 1118-1120; 10.1063/1.94247
• Hung, L. S.; Gyulai, J.; et el. (1983) Kinetics of TiSi2 formation by thin Ti films on Si; Journal of Applied Physics; Vol. 54; No. 9; 5076-5080; 10.1063/1.332781
• Bartur, M. and Nicolet, M-A. (1983) Marker experiments for diffusion in the silicide during oxidation of PdSi, Pd2Si, CoSi2, and NiSi2 films on ; Journal of Applied Physics; Vol. 54; No. 9; 5404-5415; 10.1063/1.332721
• Shreter, U.; Fernandez, R.; et el. (1983) Temperature-dependent ion mixing and diffusion during sputtering of thin films of CrSi_2 on silicon; Applied Physics Letters; Vol. 43; No. 3; 247-249; 10.1063/1.94314
• Finetti, M.; Pan, E. T-S.; et el. (1983) Electrical characteristics of amorphous iron-tungsten contacts on silicon; Applied Physics Letters; Vol. 42; No. 11; 987-989; 10.1063/1.93824
• Liu, B. X.; Clemens, B. M.; et el. (1983) Ion mixing to produce amorphous Mo-Ru superconducting films; Applied Physics Letters; Vol. 42; No. 7; 624-626; 10.1063/1.94002
• Liu, Bai-Xin; Johnson, W. L.; et el. (1983) Structural difference rule for amorphous alloy formation by ion mixing; Applied Physics Letters; Vol. 42; No. 1; 45-47; 10.1063/1.93767
• Matteson, S. and Nicolet, M-A. (1983) Ion Mixing; Annual Review of Materials Science; Vol. 13; 339-362; 10.1146/annurev.ms.13.080183.002011
• Speriosu, V. S.; Paine, B. M.; et el. (1982) X-ray rocking curve study of Si-implanted GaAs, Si, and Ge; Applied Physics Letters; Vol. 40; No. 7; 604-606; 10.1063/1.93195
• Suni, I.; Göltz, G.; et el. (1982) Compensating impurity effect on epitaxial regrowth rate of amorphized Si; Applied Physics Letters; Vol. 40; No. 3; 269-271; 10.1063/1.93034
• Mäenpää, M.; Kuech, T. F.; et el. (1982) The heteroepitaxy of Ge on Si: A comparison of chemical vapor and vacuum deposited layers; Journal of Applied Physics; Vol. 53; No. 2; 1076-1083; 10.1063/1.330519
• Wieluński, L. S.; Lien, C. -D.; et el. (1982) Improvement of thermally formed nickel silicide by ion irradiation; Journal of Vacuum Science and Technology; Vol. 20; No. 2; 182-185; 10.1116/1.571353
• Bartur, M. and Nicolet, M-A. (1982) Thermal oxidation of nickel disilicide; Applied Physics Letters; Vol. 40; No. 2; 175-177; 10.1063/1.93033
• Bartur, M. and Nicolet, M-A. (1981) Electrical characteristics of Al contact to NiSi using thin W layer as a barrier; Applied Physics Letters; Vol. 39; No. 10; 822-824; 10.1063/1.92571
• Nicolet, M-A. and Bartur, M. (1981) Diffusion barriers in layered contact structures; Journal of Vacuum Science and Technology; Vol. 19; No. 3; 786-793; 10.1116/1.571149
• Grunthaner, P. J.; Grunthaner, F. J.; et el. (1981) Oxygen impurity effects at metal/silicide interfaces: Formation of silicon oxide and suboxides in the Ni/Si system; Journal of Vacuum Science and Technology; Vol. 19; No. 3; 641-648; 10.1116/1.571078
• Grimaldi, M. G.; Paine, B. M.; et el. (1981) Epitaxial regrowth of thin amorphous GaAs layers; Applied Physics Letters; Vol. 39; No. 1; 70-72; 10.1063/1.92520
• Grimaldi, M. G.; Paine, B. M.; et el. (1981) Ion implantation and low-temperature epitaxial regrowth of GaAs; Journal of Applied Physics; Vol. 52; No. 6; 4038-4046; 10.1063/1.329213
• Tsaur, B. Y.; Lau, S. S.; et el. (1981) Sequence of phase formation in planar metal-Si reaction couples; Applied Physics Letters; Vol. 38; No. 11; 922-924; 10.1063/1.92183
• Cheung, N. W.; von Seefeld, H.; et el. (1981) Thermal stability of titanium nitride for shallow junction solar cell contacts; Journal of Applied Physics; Vol. 52; No. 6; 4297-4299; 10.1063/1.329283
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