Mayer, James W.

Combined from CaltechAUTHORS

• Stein, B. L. and Yu, E. T., et el. (1998) Deep-level transient spectroscopy of Si/Si1–x–yGexCy heterostructures; Applied Physics Letters; Vol. 73; No. 5; 647-649; 10.1063/1.121935
• Croke, E. T. and Vajo, J. J., et el. (1998) Stabilizing the surface morphology of Si1–x–yGexCy/Si heterostructures grown by molecular beam epitaxy through the use of a silicon-carbide source; Journal of Vacuum Science and Technology B; Vol. 16; No. 4; 1937-1942; 10.1116/1.590111
• Stein, B. L. and Yu, E. T., et el. (1998) Electronic properties of Si/Si1–x–yGexCy heterojunctions; Journal of Vacuum Science and Technology B; Vol. 16; No. 3; 1639-1643; 10.1116/1.589847
• Stein, B. L. and Yu, E. T., et el. (1997) Measurement of band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions; Journal of Vacuum Science and Technology B; Vol. 15; No. 4; 1108-1111; 10.1116/1.589422
• Stein, B. L. and Yu, E. T., et el. (1997) Band offsets in Si/Si1–x–yGexCy heterojunctions measured by admittance spectroscopy; Applied Physics Letters; Vol. 70; No. 25; 3413-3415; 10.1063/1.119188
• Hung, L. S. and Gyulai, J., et el. (1983) Kinetics of TiSi2 formation by thin Ti films on Si; Journal of Applied Physics; Vol. 54; No. 9; 5076-5080; 10.1063/1.332781
• Grunthaner, P. J. and Grunthaner, F. J., et el. (1981) Oxygen impurity effects at metal/silicide interfaces: Formation of silicon oxide and suboxides in the Ni/Si system; Journal of Vacuum Science and Technology; Vol. 19; No. 3; 641-648; 10.1116/1.571078
• Tsaur, B. Y. and Lau, S. S., et el. (1981) Sequence of phase formation in planar metal-Si reaction couples; Applied Physics Letters; Vol. 38; No. 11; 922-924; 10.1063/1.92183
• Grunthaner, P. J. and Grunthaner, F. J., et el. (1980) XPS study of the chemical structure of the nickel/silicon interface; Journal of Vacuum Science and Technology; Vol. 17; No. 5; 924-929; 10.1116/1.570618
• Liau, Z. L. and Tsaur, B. Y., et el. (1979) Influence of atomic mixing and preferential sputtering on depth profiles and interfaces; Journal of Vacuum Science and Technology; Vol. 16; No. 2; 121-127; 10.1116/1.569883
• Liau, Z. L. and Mayer, J. W. (1978) Limits of composition achievable by ion implantation; Journal of Vacuum Science and Technology; Vol. 15; No. 5; 1629-1635; 10.1116/1.569820
• Lau, S. S. and Tseng, W. F., et el. (1978) Heteroepitaxy of deposited amorphous layer by pulsed electron-beam irradiation; Applied Physics Letters; Vol. 33; No. 3; 235-237; 10.1063/1.90310
• Lau, S. S. and Tseng, W. F., et el. (1978) Epitaxial growth of deposited amorphous layer by laser annealing; Applied Physics Letters; Vol. 33; No. 2; 130-131; 10.1063/1.90280
• Foti, G. and Rimini, E., et el. (1978) Structure of crystallized layers by laser annealing of 〈100〉 and 〈111〉 self-implanted silicon samples; Applied Physics; Vol. 15; No. 4; 365-369; 10.1007/bf00886154
• Mayer, James W. and Kullen, R. Philip, et el. (1977) Use of ion beams in space; Journal of Vacuum Science and Technology; Vol. 14; No. 6; 1281; 10.1116/1.569366
• Lau, S. S. and Liau, Z. L., et el. (1977) Heterostructure by solid‐phase epitaxy in the Si〈111〉/Pd/Si (amorphous) system; Journal of Applied Physics; Vol. 48; No. 3; 917-919; 10.1063/1.323708
• Olowolafe, J. O. and Nicolet, M.-A., et el. (1976) Formation kinetics of CrSi2 films on Si substrates with and without interposed Pd2Si layer; Journal of Applied Physics; Vol. 47; No. 12; 5182-5186; 10.1063/1.322591
• Nakamura, K. and Olowolafe, J. O., et el. (1976) Interaction of metal layers with polycrystalline Si; Journal of Applied Physics; Vol. 47; No. 4; 1278-1283; 10.1063/1.322826
• Nakamura, K. and Lau, S. S., et el. (1976) Ti and V layers retard interaction between Al films and polycrystalline Si; Applied Physics Letters; Vol. 28; No. 5; 277-280; 10.1063/1.88734
• Lau, S. S. and Canali, C., et el. (1976) Antimony doping of Si layers grown by solid-phase epitaxy; Applied Physics Letters; Vol. 28; No. 3; 148-150; 10.1063/1.88670
• Gamo, K. and Inada, T., et el. (1976) Analysis of Ga_(1-x)Al_xAs-GaAs Heteroepitaxial Layers by Proton Backscattering; ISBN 978-1-4615-8878-8; Ion Beam Surface Layer Analysis; 375-384; 10.1007/978-1-4615-8876-4_32
• Scherzer, B. M. U. and Børgesen, P., et el. (1976) Determination of Stopping Cross Sections by Rutherford Backscattering; ISBN 978-1-4615-8878-8; Ion Beam Surface Layer Analysis; 33-46; 10.1007/978-1-4615-8876-4_4
• Nakamura, K. and Nicolet, M-A., et el. (1975) Interaction of Al layers with polycrystalline Si; Journal of Applied Physics; Vol. 46; No. 11; 4678-4684; 10.1063/1.321530
• Mayer, James W. and Poate, John M., et el. (1975) Thin Films and Solid-Phase Reactions; Science; Vol. 190; No. 4211; 228-234; 10.1126/science.190.4211.228
• Malm, H. L. and Canali, C., et el. (1975) Gamma–ray spectroscopy with single–carrier collection in high–resistivity semiconductors; Applied Physics Letters; Vol. 26; No. 6; 344-346; 10.1063/1.88158
• Lee, T. F. and Pashley, R. D., et el. (1975) Investigation of tellurium-implanted silicon; Journal of Applied Physics; Vol. 46; No. 1; 381-388; 10.1063/1.321347
• Mayer, J. W. and Nicolet, M-A., et el. (1975) Backscattering spectrometry; Journal of Vacuum Science and Technology; Vol. 12; No. 1; 356; 10.1116/1.568788
• Chu, W. K. and Kraütle, H., et el. (1974) Identification of the dominant diffusing species in silicide formation; Applied Physics Letters; Vol. 25; No. 8; 454-457; 10.1063/1.1655546
• Kräutle, H. and Nicolet, M-A., et el. (1974) Kinetics of silicide formation by thin films of V on Si and SiO_2 substrates; Journal of Applied Physics; Vol. 45; No. 8; 3304-3308; 10.1063/1.1663776
• Ottaviani, G. and Sigurd, D., et el. (1974) Crystallization of Ge and Si in metal films. I; Journal of Applied Physics; Vol. 45; No. 4; 1730-1739; 10.1063/1.1663483
• Sigurd, D. and Ottaviani, G., et el. (1974) Crystallization of Ge and Si in metal films. II; Journal of Applied Physics; Vol. 45; No. 4; 1740-1745; 10.1063/1.1663484
• Mayer, J. W. and Tu, K. N. (1974) Analysis of thin-film structures with nuclear backscattering and x-ray diffraction; Journal of Vacuum Science and Technology; Vol. 11; No. 1; 86-93; 10.1116/1.1318668
• Mayer, J. W. (1973) Ion implantation in semiconductors; 10.1109/IEDM.1973.188633
• Marrello, V. and Lee, T. F., et el. (1973) Condensation of Injected Electrons and Holes in Germanium; Physical Review Letters; Vol. 31; No. 9; 593-594; 10.1103/PhysRevLett.31.593
• Ottaviani, G. and Sigurd, D., et el. (1973) Crystal Growth of Silicon and Germanium in Metal Films; Science; Vol. 180; No. 4089; 948-949; 10.1126/science.180.4089.948
• Nicolet, M.-A. and Mayer, J. W., et el. (1972) Microanalysis of Materials by Backscattering Spectrometry; Science; Vol. 177; No. 4052; 841-849; 10.1126/science.177.4052.841
• Ottaviani, G. and Marrello, V., et el. (1972) Formation of Injecting and Blocking Contacts on High-Resistivity Germanium; Applied Physics Letters; Vol. 20; No. 8; 323-325; 10.1063/1.1654169
• Hiraki, A. and Nicolet, M-A., et el. (1971) Low-temperature migration of silicon in thin layers of gold platinum; Applied Physics Letters; Vol. 18; No. 5; 178-181; 10.1063/1.1653615
• McCaldin, J. O. and Mayer, J. W. (1970) Donor behavior in indium-alloyed silicon; Applied Physics Letters; Vol. 17; No. 9; 365-366; 10.1063/1.1653436
• Caywood, J. M. and Mead, C. A., et el. (1970) Influence of carrier diffusion effects on window thickness of semiconductor detectors; Nuclear Instruments and Methods; Vol. 79; No. 2; 329-332; 10.1016/0029-554X(70)90159-X
• Caywood, J. M. and Mead, C. A., et el. (1969) Origin of Field Dependent Collection Efficiency In Contact Limited Devices; Helvetica Physica Acta; Vol. 42; No. 7-8; 948
• Eriksson, L. and Davies, J. A., et el. (1969) Ion Implantation Studies in Silicon; Science; Vol. 163; No. 3868; 627-633; 10.1126/science.163.3868.627