- Stein, B. L.; Yu, E. T.; et el. (1998) Deep-level
transient spectroscopy of Si/Si1–x–yGexCy heterostructures; Applied
Physics Letters; Vol. 73; No. 5; 647-649; 10.1063/1.121935
- Croke, E. T.; Vajo, J. J.; et el. (1998) Stabilizing
the surface morphology of Si1–x–yGexCy/Si heterostructures grown by
molecular beam epitaxy through the use of a silicon-carbide source;
Journal of Vacuum Science and Technology B; Vol. 16; No. 4; 1937-1942;
10.1116/1.590111
- Stein, B. L.; Yu, E. T.; et el. (1998) Electronic
properties of Si/Si1–x–yGexCy heterojunctions; Journal of Vacuum
Science and Technology B; Vol. 16; No. 3; 1639-1643; 10.1116/1.589847
- Stein, B. L.; Yu, E. T.; et el. (1997) Measurement
of band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions;
Journal of Vacuum Science and Technology B; Vol. 15; No. 4; 1108-1111;
10.1116/1.589422
- Stein, B. L.; Yu, E. T.; et el. (1997) Band offsets
in Si/Si1–x–yGexCy heterojunctions measured by admittance
spectroscopy; Applied Physics Letters; Vol. 70; No. 25; 3413-3415;
10.1063/1.119188
- Hung, L. S.; Gyulai, J.; et el. (1983) Kinetics of
TiSi2 formation by thin Ti films on Si; Journal of Applied Physics;
Vol. 54; No. 9; 5076-5080; 10.1063/1.332781
- Grunthaner, P. J.; Grunthaner, F. J.; et el. (1981) Oxygen
impurity effects at metal/silicide interfaces: Formation of silicon
oxide and suboxides in the Ni/Si system; Journal of Vacuum Science
and Technology; Vol. 19; No. 3; 641-648; 10.1116/1.571078
- Tsaur, B. Y.; Lau, S. S.; et el. (1981) Sequence of
phase formation in planar metal-Si reaction couples; Applied Physics
Letters; Vol. 38; No. 11; 922-924; 10.1063/1.92183
- Grunthaner, P. J.; Grunthaner, F. J.; et el. (1980) XPS
study of the chemical structure of the nickel/silicon interface;
Journal of Vacuum Science and Technology; Vol. 17; No. 5; 924-929; 10.1116/1.570618
- Liau, Z. L.; Tsaur, B. Y.; et el. (1979) Influence
of atomic mixing and preferential sputtering on depth profiles and
interfaces; Journal of Vacuum Science and Technology; Vol. 16;
No. 2; 121-127; 10.1116/1.569883
- Liau, Z. L. and Mayer, J. W. (1978) Limits
of composition achievable by ion implantation; Journal of Vacuum
Science and Technology; Vol. 15; No. 5; 1629-1635; 10.1116/1.569820
- Lau, S. S.; Tseng, W. F.; et el. (1978) Heteroepitaxy
of deposited amorphous layer by pulsed electron-beam irradiation;
Applied Physics Letters; Vol. 33; No. 3; 235-237; 10.1063/1.90310
- Lau, S. S.; Tseng, W. F.; et el. (1978) Epitaxial
growth of deposited amorphous layer by laser annealing; Applied
Physics Letters; Vol. 33; No. 2; 130-131; 10.1063/1.90280
- Foti, G.; Rimini, E.; et el. (1978) Structure
of crystallized layers by laser annealing of 〈100〉 and 〈111〉
self-implanted silicon samples; Applied Physics; Vol. 15; No. 4;
365-369; 10.1007/bf00886154
- Mayer, James W.; Kullen, R. Philip; et el. (1977) Use
of ion beams in space; Journal of Vacuum Science and Technology;
Vol. 14; No. 6; 1281; 10.1116/1.569366
- Lau, S. S.; Liau, Z. L.; et el. (1977) Heterostructure
by solid‐phase epitaxy in the Si〈111〉/Pd/Si (amorphous) system;
Journal of Applied Physics; Vol. 48; No. 3; 917-919; 10.1063/1.323708
- Olowolafe, J. O.; Nicolet, M.-A.; et el. (1976) Formation
kinetics of CrSi2 films on Si substrates with and without interposed
Pd2Si layer; Journal of Applied Physics; Vol. 47; No. 12; 5182-5186;
10.1063/1.322591
- Nakamura, K.; Olowolafe, J. O.; et el. (1976) Interaction
of metal layers with polycrystalline Si; Journal of Applied Physics;
Vol. 47; No. 4; 1278-1283; 10.1063/1.322826
- Nakamura, K.; Lau, S. S.; et el. (1976) Ti and V
layers retard interaction between Al films and polycrystalline Si;
Applied Physics Letters; Vol. 28; No. 5; 277-280; 10.1063/1.88734
- Lau, S. S.; Canali, C.; et el. (1976) Antimony
doping of Si layers grown by solid-phase epitaxy; Applied Physics
Letters; Vol. 28; No. 3; 148-150; 10.1063/1.88670
- Nakamura, K.; Nicolet, M-A.; et el. (1975) Interaction
of Al layers with polycrystalline Si; Journal of Applied Physics;
Vol. 46; No. 11; 4678-4684; 10.1063/1.321530
- Mayer, James W.; Poate, John M.; et el. (1975) Thin
Films and Solid-Phase Reactions; Science; Vol. 190; No. 4211;
228-234; 10.1126/science.190.4211.228
- Malm, H. L.; Canali, C.; et el. (1975) Gamma–ray
spectroscopy with single–carrier collection in high–resistivity
semiconductors; Applied Physics Letters; Vol. 26; No. 6; 344-346; 10.1063/1.88158
- Lee, T. F.; Pashley, R. D.; et el. (1975) Investigation
of tellurium-implanted silicon; Journal of Applied Physics; Vol. 46;
No. 1; 381-388; 10.1063/1.321347
- Mayer, J. W.; Nicolet, M-A.; et el. (1975) Backscattering
spectrometry; Journal of Vacuum Science and Technology; Vol. 12;
No. 1; 356; 10.1116/1.568788
- Chu, W. K.; Kraütle, H.; et el. (1974) Identification
of the dominant diffusing species in silicide formation; Applied
Physics Letters; Vol. 25; No. 8; 454-457; 10.1063/1.1655546
- Kräutle, H.; Nicolet, M-A.; et el. (1974) Kinetics
of silicide formation by thin films of V on Si and SiO_2 substrates;
Journal of Applied Physics; Vol. 45; No. 8; 3304-3308; 10.1063/1.1663776
- Ottaviani, G.; Sigurd, D.; et el. (1974) Crystallization
of Ge and Si in metal films. I; Journal of Applied Physics; Vol. 45;
No. 4; 1730-1739; 10.1063/1.1663483
- Sigurd, D.; Ottaviani, G.; et el. (1974) Crystallization
of Ge and Si in metal films. II; Journal of Applied Physics; Vol.
45; No. 4; 1740-1745; 10.1063/1.1663484
- Mayer, J. W. and Tu, K. N. (1974) Analysis
of thin-film structures with nuclear backscattering and x-ray
diffraction; Journal of Vacuum Science and Technology; Vol. 11;
No. 1; 86-93; 10.1116/1.1318668
- Marrello, V.; Lee, T. F.; et el. (1973) Condensation
of Injected Electrons and Holes in Germanium; Physical Review
Letters; Vol. 31; No. 9; 593-594; 10.1103/PhysRevLett.31.593
- Ottaviani, G.; Sigurd, D.; et el. (1973) Crystal
Growth of Silicon and Germanium in Metal Films; Science; Vol. 180;
No. 4089; 948-949; 10.1126/science.180.4089.948
- Nicolet, M.-A.; Mayer, J. W.; et el. (1972) Microanalysis
of Materials by Backscattering Spectrometry; Science; Vol. 177;
No. 4052; 841-849; 10.1126/science.177.4052.841
- Ottaviani, G.; Marrello, V.; et el. (1972) Formation of
Injecting and Blocking Contacts on High-Resistivity Germanium;
Applied Physics Letters; Vol. 20; No. 8; 323-325; 10.1063/1.1654169
- Hiraki, A.; Nicolet, M-A.; et el. (1971) Low-temperature
migration of silicon in thin layers of gold platinum; Applied
Physics Letters; Vol. 18; No. 5; 178-181; 10.1063/1.1653615
- McCaldin, J. O. and Mayer, J. W. (1970) Donor
behavior in indium-alloyed silicon; Applied Physics Letters; Vol.
17; No. 9; 365-366; 10.1063/1.1653436
- Caywood, J. M.; Mead, C. A.; et el. (1970) Influence
of carrier diffusion effects on window thickness of semiconductor
detectors; Nuclear Instruments and Methods; Vol. 79; No. 2; 329-332;
10.1016/0029-554X(70)90159-X
- Caywood, J. M.; Mead, C. A.; et el. (1969) Origin
of Field Dependent Collection Efficiency In Contact Limited Devices;
Helvetica Physica Acta; Vol. 42; No. 7-8; 948
- Eriksson, L.; Davies, J. A.; et el. (1969) Ion
Implantation Studies in Silicon; Science; Vol. 163; No. 3868;
627-633; 10.1126/science.163.3868.627