Gover, Avraham

Article from CaltechAUTHORS

• Gover, Avraham and Yariv, Amnon (2020) Free-Electron–Bound-Electron Resonant Interaction; Physical Review Letters; Vol. 124; No. 6; Art. No. 064801; 10.1103/physrevlett.124.064801
• Gover, A. and Yariv, A. (1978) Collective and single-electron interactions of electron beams with electromagnetic waves, and free-electron lasers; Applied Physics; Vol. 16; No. 2; 121-138; 10.1007/bf00930376
• Lee, C. P. and Gover, A., el al. (1977) Barrier-controlled low-threshold pnpn GaAs heterostructure laser; Applied Physics Letters; Vol. 30; No. 10; 535-538; 10.1063/1.89225
• Lee, C. P. and Samid, I., el al. (1976) Low-threshold room-temperature embedded heterostructure lasers; Applied Physics Letters; Vol. 29; No. 6; 365-367; 10.1063/1.89081
• Gover, A. and Lee, C. P., el al. (1976) Direct transmission of pictorial information in multimode optical fibers; Journal of the Optical Society of America; Vol. 66; No. 4; 306-311
• Samid, I. and Lee, C. P., el al. (1975) Embedded heterostructure epitaxy: A technique for two-dimensional thin-film definition; Applied Physics Letters; Vol. 27; No. 7; 405-407; 10.1063/1.88493
• Gover, A. and Yariv, A. (1975) Intraband radiative transitions and plasma–electromagnetic-wave coupling in periodic semiconductor structure; Journal of Applied Physics; Vol. 46; No. 9; 3946-3950; 10.1063/1.322143
• Yariv, A. and Gover, A. (1975) Equivalence of the coupled-mode and Floquet-Bloch formalisms in periodic optical waveguides; Applied Physics Letters; Vol. 26; No. 9; 537-539; 10.1063/1.88247
• Yariv, Amnon and Gover, Avraham (1974) Distributed feedback X-ray lasers in single crystals; IEEE Journal of Quantum Electronics; Vol. 10; No. 9; 779-779; 10.1109/JQE.1974.1068403
• Gover, Avraham and Yariv, Amnon (1974) Monolithic solid-state traveling-wave amplifier; Journal of Applied Physics; Vol. 45; No. 6; 2596-2600; 10.1063/1.1663635
• Gover, Avraham and Grinberg, Jan, el al. (1972) Computation of bipolar transistor base parameters for general distribution of impurities in base; IEEE Transactions on Electron Devices; Vol. 19; No. 8; 967-975; 10.1109/T-ED.1972.17526