Atwater, Harry

Article from CaltechAUTHORS

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• Im, S. and Song, J. H., el al. (1997) SiGeC alloy layer formation by high-dose C + implantations into pseudomorphic metastable Ge0.08Si0.92 on Si(100); Journal of Applied Physics; Vol. 81; No. 4; 1700-1703; 10.1063/1.364027
• Min, K. S. and Shcheglov, K. V., el al. (1996) Defect-related versus excitonic visible light emission from ion beam synthesized Si nanocrystals in SiO2; Applied Physics Letters; Vol. 69; No. 14; 2033-2035; 10.1063/1.116870
• Camata, Renato P. and Atwater, Harry A., el al. (1996) Size classification of silicon nanocrystals; Applied Physics Letters; Vol. 68; No. 22; 3162-3164; 10.1063/1.115811
• Min, K. S. and Shcheglov, K. V., el al. (1996) The role of quantum-confined excitons vs defects in the visible luminescence of SiO2 films containing Ge nanocrystals; Applied Physics Letters; Vol. 68; No. 18; 2511-2513; 10.1063/1.115838
• He, Gang and Atwater, Harry A. (1996) Synthesis of epitaxial SnxGe1–x alloy films by ion-assisted molecular beam epitaxy; Applied Physics Letters; Vol. 68; No. 5; 664-666; 10.1063/1.116502
• Joo, Hyun Sung and Atwater, Harry A. (1995) Investigation of interface orientation and interface mixing in spin valve heterostructures; IEEE Transactions on Magnetics; Vol. 31; No. 6, pt.; 3946-3948
• Wong, Selmer S. and He, Gang, el al. (1995) Local order measurement in SnGe alloys and monolayer Sn films on Si with reflection electron energy loss spectrometry; Journal of the Vacuum Society of America A; Vol. 13; No. 2; 216-220; 10.1116/1.579401
• Shcheglov, K. V. and Yang, C. M., el al. (1995) Electroluminescence and photoluminescence of Ge-implanted Si/SiO_2/Si structures; Applied Physics Letters; Vol. 66; No. 6; 745-747; 10.1063/1.114080
• Hashim, I. and Atwater, H. A. (1994) In situ magnetic and structural analysis of epitaxial Ni80Fe20 thin films for spin-valve heterostructures; Journal of Applied Physics; Vol. 75; No. 10; 6516-6518; 10.1063/1.356933
• Hashim, I. and Park, B., el al. (1993) Epitaxial growth of Cu (001) on Si (001): Mechanisms of orientation development and defect morphology; Applied Physics Letters; Vol. 63; No. 20; 2833-2835; 10.1063/1.110302
• Saunders, Winston A. and Sercel, Peter C., el al. (1993) Synthesis of luminescent silicon clusters by spark ablation; Applied Physics Letters; Vol. 63; No. 11; 1549-1551; 10.1063/1.110745
• Nikzad, Shouleh and Wong, Selmer S., el al. (1993) In situ reflection electron energy loss spectroscopy measurements of low temperature surface cleaning for Si molecular beam epitaxy; Applied Physics Letters; Vol. 63; No. 10; 1414-1416; 10.1063/1.109694
• Hashim, I. and Atwater, H. A., el al. (1993) Evolution of structural and magnetic properties in Ta/Ni_81Fe_(19) multilayer thin films; Journal of Applied Physics; Vol. 74; No. 1; 458-464; 10.1063/1.355252
• Vahala, Kerry J. and Saunders, Winston A., el al. (1993) Lower-dimensional quantum structures by selective growth and gas-phase nucleation; Journal of Vacuum Science and Technology B; Vol. 11; No. 4; 1660-1666; 10.1116/1.586499
• Saunders, Winston A. and Sercel, Peter C., el al. (1993) The role of Ga-droplet formation in nanometer-scale GaAs cluster synthesis from organometallic precursors; Zeitschrift für Physik D Atoms, Molecules and Clusters; Vol. 26; No. S1; 219-221; 10.1007/bf01425670
• Tsai, C. J. and Vreeland, T., Jr., el al. (1992) Defect formation and diffusion mechanism in ion-assisted molecular-beam epitaxy; Physical Review B; Vol. 46; No. 11; 7103-7109; 10.1103/PhysRevB.46.7103
• Sercel, Peter C. and Saunders, Winston A., el al. (1992) Nanometer-scale GaAs clusters from organometallic precursors; Applied Physics Letters; Vol. 61; No. 6; 696-698; 10.1063/1.107825
• Saunders, Winston A. and Vahala, Kerry J., el al. (1992) Resonance-enhanced spontaneous emission from quantum dots; Journal of Applied Physics; Vol. 72; No. 2; 806-808; 10.1063/1.351818
• Nikzad, Shouleh and Ahn, Channing C., el al. (1992) Quantitative analysis of semiconductor alloy composition during growth by reflection-electron energy loss spectroscopy; Journal of Vacuum Science and Technology B; Vol. 10; No. 2; 762-765; 10.1116/1.586443
• Saunders, Winston A. and Sercel, Peter C., el al. (1992) Vapor phase synthesis of crystalline nanometer-scale GaAs clusters; Applied Physics Letters; Vol. 60; No. 8; 950-952; 10.1063/1.106471
• Saunders, Winston A. and Sercel, Peter C., el al. (1992) Vapor phase synthesis of crystalline nanometer‐scale GaAs clusters; Applied Physics Letters; Vol. 60; No. 8; 950-952; 10.1063/1.106471
• Atwater, Harry A. and Ahn, Channing C. (1991) Reflection electron energy loss spectroscopy during initial stages of Ge growth on Si by molecular beam epitaxy; Applied Physics Letters; Vol. 58; No. 3; 269-271; 10.1063/1.104685
• Flagan, Richard C. and Atwater, Harry A., el al. (1991) Fabrication of Semiconductor Quantum Dots; Journal of Aerosol Science; Vol. 22; No. S1; S31-S33; 10.1016/S0021-8502(05)80027-8
• Tsai, C. J. and Atwater, H. A., el al. (1990) Strain modification in coherent Ge and SixGe1–x epitaxial films by ion-assisted molecular beam epitaxy; Applied Physics Letters; Vol. 57; No. 22; 2305-2307; 10.1063/1.103877
• Chason, E. and Tsao, J. Y., el al. (1990) Surface roughening of Ge(001) during 200 eV Xe ion bombardment and Ge molecular beam epitaxy; Journal of Vacuum Science and Technology A; Vol. 8; No. 3; 2507-2511; 10.1116/1.576724
• Gopinath, A. and Atwater, H. (1988) Simulation of GaAs p-i-n diodes; IEEE Transactions on Electron Devices; Vol. 35; No. 4; 414-417; 10.1109/16.2473
• Atwater, H. A. (1988) Tests of microstrip dispersion formulas; IEEE Transactions on Microwave Theory and Techniques; Vol. 36; No. 3; 619-621; 10.1109/22.3561
• Chen, Chang-Lee and Courtney, William E., el al. (1987) A Low-Loss Ku-Band Monolithic Analog Phase Shifter; IEEE Transactions on Microwave Theory and Techniques; Vol. 35; No. 3; 315-320; 10.1109/tmtt.1987.1133644
• Atwater, Harry A. (1985) Circuit Design of the Loaded-Line Phase Shifter; IEEE Transactions on Microwave Theory and Techniques; Vol. 33; No. 7; 626-634; 10.1109/TMTT.1985.1133038
• Atwater, H. A. and Thompson, C. V., el al. (1983) Orientation filtering by growth-velocity competition in zone-melting recrystallization of silicon on SiO_2; Applied Physics Letters; Vol. 43; No. 12; 1126-1128; 10.1063/1.94255
• Maby, E. W. and Atwater, H. A., el al. (1983) Electron-beam-induced current measurements in silicon-on-insulator films prepared by zone-melting recrystallization; Applied Physics Letters; Vol. 43; No. 5; 482-484; 10.1063/1.94359
• Atwater, Harry A. (1983) Mlcrostrip Reactive Circuit Elements; IEEE Transactions on Microwave Theory and Techniques; Vol. 31; No. 6; 488-491; 10.1109/tmtt.1983.1131529
• Atwater, H. A. and Smith, Henry I., el al. (1982) Orientation selection by zone-melting silicon films through planar constrictions; Applied Physics Letters; Vol. 41; No. 8; 747-749; 10.1063/1.93664
• Atwater, Harry A. (1981) Impedance Transformations For The Generalized Reflection Modulator; IEEE Transactions on Microwave Theory and Techniques; Vol. 29; No. 3; 229-234; 10.1109/TMTT.1981.1130332
• Atwater, Harry A. (1980) Reflection Coefficient Transformations for Phase-Shift Circuits; IEEE Transactions on Microwave Theory and Techniques; Vol. 28; No. 6; 563-568; 10.1109/TMTT.1980.1130119