<h1>Yu, Edward Tsu-Wei</h1>
<h2>Combined from <a href="https://authors.library.caltech.edu">CaltechAUTHORS</a></h2>
<ul>
<li>Stein, B. L. and Yu, E. T., el al. (1998) <a href="https://resolver.caltech.edu/CaltechAUTHORS:STEapl98">Deep-level transient spectroscopy of Si/Si1–x–yGexCy heterostructures</a>; Applied Physics Letters; Vol. 73; No. 5; 647-649; <a href="https://doi.org/10.1063/1.121935">10.1063/1.121935</a></li>
<li>Stein, B. L. and Yu, E. T., el al. (1998) <a href="https://resolver.caltech.edu/CaltechAUTHORS:STEjvstb98">Electronic properties of Si/Si1–x–yGexCy heterojunctions</a>; Journal of Vacuum Science and Technology B; Vol. 16; No. 3; 1639-1643; <a href="https://doi.org/10.1116/1.589847">10.1116/1.589847</a></li>
<li>Stein, B. L. and Yu, E. T., el al. (1997) <a href="https://resolver.caltech.edu/CaltechAUTHORS:STEjvstb97">Measurement of band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions</a>; Journal of Vacuum Science and Technology B; Vol. 15; No. 4; 1108-1111; <a href="https://doi.org/10.1116/1.589422">10.1116/1.589422</a></li>
<li>Stein, B. L. and Yu, E. T., el al. (1997) <a href="https://resolver.caltech.edu/CaltechAUTHORS:STEapl97">Band offsets in Si/Si1–x–yGexCy heterojunctions measured by admittance spectroscopy</a>; Applied Physics Letters; Vol. 70; No. 25; 3413-3415; <a href="https://doi.org/10.1063/1.119188">10.1063/1.119188</a></li>
<li>Wang, M. W. and Swenberg, J. F., el al. (1994) <a href="https://resolver.caltech.edu/CaltechAUTHORS:WANapl94">X-ray photoelectron spectroscopy measurement of valence-band offsets for Mg-based semiconductor compounds</a>; Applied Physics Letters; Vol. 64; No. 25; 3455-3457; <a href="https://doi.org/10.1063/1.111239">10.1063/1.111239</a></li>
<li>Wang, M. W. and Phillips, M. C., el al. (1993) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120307-105358808">n-CdSe/p-ZnTe based wide band-gap light emitters: Numerical simulation and design</a>; Journal of Applied Physics; Vol. 73; No. 9; 4660-4668; <a href="https://doi.org/10.1063/1.352761">10.1063/1.352761</a></li>
<li>Yu, E. T. and Phillips, M. C., el al. (1992) <a href="https://resolver.caltech.edu/CaltechAUTHORS:YUEprb92">Interfacial reactions and band offsets in the AlSb/GaSb/ZnTe material system</a>; Physical Review B; Vol. 46; No. 20; 13379-13388; <a href="https://doi.org/10.1103/PhysRevB.46.13379">10.1103/PhysRevB.46.13379</a></li>
<li>Ting, D. Z.-Y. and Yu, E. T., el al. (1992) <a href="https://resolver.caltech.edu/CaltechAUTHORS:TINprb92">Multiband treatment of quantum transport in interband tunnel devices</a>; Physical Review B; Vol. 45; No. 7; 3583-3592; <a href="https://doi.org/10.1103/PhysRevB.45.3583">10.1103/PhysRevB.45.3583</a></li>
<li>Ting, D. Z.-Y. and Yu, E. T., el al. (1991) <a href="https://resolver.caltech.edu/CaltechAUTHORS:TINjvstb91">Band structure effects in interband tunnel devices</a>; Journal of Vacuum Science and Technology B; Vol. 9; No. 4; 2405-2410; <a href="https://doi.org/10.1116/1.585711">10.1116/1.585711</a></li>
<li>Yu, E. T. and Phillips, M. C., el al. (1991) <a href="https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb91">Measurement of the CdSe/ZnTe valence band offset by x-ray photoelectron spectroscopy</a>; Journal of Vacuum Science and Technology B; Vol. 9; No. 4; 2233-2237; <a href="https://doi.org/10.1116/1.585726">10.1116/1.585726</a></li>
<li>Collins, D. A. and Yu, E. T., el al. (1990) <a href="https://resolver.caltech.edu/CaltechAUTHORS:COLapl90">Experimental observation of negative differential resistance from an InAs/GaSb interface</a>; Applied Physics Letters; Vol. 57; No. 7; 683-685; <a href="https://doi.org/10.1063/1.103591">10.1063/1.103591</a></li>
<li>Söderström, J. R. and Yu, E. T., el al. (1990) <a href="https://resolver.caltech.edu/CaltechAUTHORS:SODjap90">Two-band modeling of narrow band gap and interband tunneling devices</a>; Journal of Applied Physics; Vol. 68; No. 3; 1372-1375; <a href="https://doi.org/10.1063/1.346688">10.1063/1.346688</a></li>
<li>Ting, D. Z.-Y. and Yu, E. T., el al. (1990) <a href="https://resolver.caltech.edu/CaltechAUTHORS:TINjvstb90">Modeling of novel heterojunction tunnel structures</a>; Journal of Vacuum Science and Technology B; Vol. 8; No. 4; 810-816; <a href="https://doi.org/10.1116/1.584971">10.1116/1.584971</a></li>
<li>Yu, E. T. and Croke, E. T., el al. (1990) <a href="https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb90">Measurement of the valence band offset in novel heterojunction systems: Si/Ge (100) and AlSb/ZnTe (100)</a>; Journal of Vacuum Science and Technology B; Vol. 8; No. 4; 908-915; <a href="https://doi.org/10.1116/1.584941">10.1116/1.584941</a></li>
<li>Yu, E. T. and Jackson, M. K., el al. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:YUEapl89">Hole tunneling times in GaAs/AlAs double-barrier structures</a>; Applied Physics Letters; Vol. 55; No. 8; 744-746; <a href="https://doi.org/10.1063/1.101793">10.1063/1.101793</a></li>
<li>Yu, E. T. and Chow, D. H., el al. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb89">Commutativity of the GaAs/AlAs (100) band offset</a>; Journal of Vacuum Science and Technology B; Vol. 7; No. 2; 391-394; <a href="https://doi.org/10.1116/1.584758">10.1116/1.584758</a></li>
</ul>