@article{https://resolver.caltech.edu/CaltechAUTHORS:STEapl98,
    title = "Deep-level transient spectroscopy of Si/Si1–x–yGexCy heterostructures",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:STEapl98",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.121935",
    volume = "73"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:STEjvstb98,
    title = "Electronic properties of Si/Si1–x–yGexCy heterojunctions",
    journal = "Journal of Vacuum Science and Technology B",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:STEjvstb98",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.589847",
    volume = "16"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:STEjvstb97,
    title = "Measurement of band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions",
    journal = "Journal of Vacuum Science and Technology B",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:STEjvstb97",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.589422",
    volume = "15"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:STEapl97,
    title = "Band offsets in Si/Si1–x–yGexCy heterojunctions measured by admittance spectroscopy",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:STEapl97",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.119188",
    volume = "70"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:WANapl94,
    title = "X-ray photoelectron spectroscopy measurement of valence-band offsets for Mg-based semiconductor compounds",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:WANapl94",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.111239",
    volume = "64"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:20120307-105358808,
    title = "n-CdSe/p-ZnTe based wide band-gap light emitters: Numerical simulation and design",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120307-105358808",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.352761",
    volume = "73"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:YUEprb92,
    title = "Interfacial reactions and band offsets in the AlSb/GaSb/ZnTe material system",
    journal = "Physical Review B",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:YUEprb92",
    id = "record",
    issn = "0163-1829",
    doi = "10.1103/PhysRevB.46.13379",
    volume = "46"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:TINprb92,
    title = "Multiband treatment of quantum transport in interband tunnel devices",
    journal = "Physical Review B",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:TINprb92",
    id = "record",
    issn = "0163-1829",
    doi = "10.1103/PhysRevB.45.3583",
    volume = "45"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb91,
    title = "Measurement of the CdSe/ZnTe valence band offset by x-ray photoelectron spectroscopy",
    journal = "Journal of Vacuum Science and Technology B",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb91",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.585726",
    volume = "9"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:TINjvstb91,
    title = "Band structure effects in interband tunnel devices",
    journal = "Journal of Vacuum Science and Technology B",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:TINjvstb91",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.585711",
    volume = "9"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:COLapl90,
    title = "Experimental observation of negative differential resistance from an InAs/GaSb interface",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:COLapl90",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.103591",
    volume = "57"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:SODjap90,
    title = "Two-band modeling of narrow band gap and interband tunneling devices",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:SODjap90",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.346688",
    volume = "68"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:TINjvstb90,
    title = "Modeling of novel heterojunction tunnel structures",
    journal = "Journal of Vacuum Science and Technology B",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:TINjvstb90",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.584971",
    volume = "8"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb90,
    title = "Measurement of the valence band offset in novel heterojunction systems: Si/Ge (100) and AlSb/ZnTe (100)",
    journal = "Journal of Vacuum Science and Technology B",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb90",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.584941",
    volume = "8"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:YUEapl89,
    title = "Hole tunneling times in GaAs/AlAs double-barrier structures",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:YUEapl89",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.101793",
    volume = "55"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb89,
    title = "Commutativity of the GaAs/AlAs (100) band offset",
    journal = "Journal of Vacuum Science and Technology B",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb89",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.584758",
    volume = "7"
}