Wang, Michael Wei-Ching

Combined from CaltechAUTHORS

• Wang, M. W. and Collins, D. A., et el. (1995) Study of interface asymmetry in InAs–GaSb heterojunctions; Journal of Vacuum Science and Technology B; Vol. 13; No. 4; 1689-1693; 10.1116/1.587879
• Wang, M. W. and McCaldin, J. O., et el. (1995) Schottky-based band lineups for refractory semiconductors; Applied Physics Letters; Vol. 66; No. 15; 1974-1976; 10.1063/1.113295
• Feenstra, R. M. and Collins, D. A., et el. (1994) Scanning tunneling microscopy of lnAs/GaSb superlattices: Subbands, interface roughness, and interface asymmetry; Journal of Vacuum Science and Technology B; Vol. 12; No. 4; 2592-2597; 10.1116/1.587215
• Wang, M. W. and Swenberg, J. F., et el. (1994) X-ray photoelectron spectroscopy measurement of valence-band offsets for Mg-based semiconductor compounds; Applied Physics Letters; Vol. 64; No. 25; 3455-3457; 10.1063/1.111239
• Collins, D. A. and Wang, M. W., et el. (1994) Reflection high energy electron diffraction observation of exchange reaction dynamics on InAs surfaces; Journal of Vacuum Science and Technology B; Vol. 12; No. 2; 1125-1128; 10.1116/1.587063
• Wang, M. W. and Collins, D. A., et el. (1993) X-ray photoelectron spectroscopy investigation of the mixed anion GaSb/InAs heterointerface; Journal of Vacuum Science and Technology B; Vol. 11; No. 4; 1418-1422; 10.1116/1.586952
• Wang, M. W. and Phillips, M. C., et el. (1993) n-CdSe/p-ZnTe based wide band-gap light emitters: Numerical simulation and design; Journal of Applied Physics; Vol. 73; No. 9; 4660-4668; 10.1063/1.352761
• Yu, E. T. and Phillips, M. C., et el. (1992) Interfacial reactions and band offsets in the AlSb/GaSb/ZnTe material system; Physical Review B; Vol. 46; No. 20; 13379-13388; 10.1103/PhysRevB.46.13379
• Phillips, M. C. and Wang, M. W., et el. (1992) Proposal and verification of a new visible light emitter based on wide band gap II-VI semiconductors; Applied Physics Letters; Vol. 61; No. 16; 1962-1964; 10.1063/1.108353
• Liu, Y. X. and Wang, M. W., et el. (1992) Schottky barrier induced injecting contact on wide band gap semiconductors; Journal of Vacuum Science and Technology B; Vol. 10; No. 4; 2072-2076; 10.1116/1.586320