@article{https://resolver.caltech.edu/CaltechAUTHORS:20120224-070410762,
    title = "Study of interface asymmetry in InAs–GaSb heterojunctions",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1995",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120224-070410762",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.587879",
    volume = "13"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:WANapl95,
    title = "Schottky-based band lineups for refractory semiconductors",
    journal = "Applied Physics Letters",
    year = "1995",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:WANapl95",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.113295",
    volume = "66"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120306-154451844,
    title = "Scanning tunneling microscopy of lnAs/GaSb superlattices: Subbands, interface roughness, and interface asymmetry",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1994",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120306-154451844",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.587215",
    volume = "12"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:WANapl94,
    title = "X-ray photoelectron spectroscopy measurement of valence-band offsets for Mg-based semiconductor compounds",
    journal = "Applied Physics Letters",
    year = "1994",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:WANapl94",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.111239",
    volume = "64"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120222-100154823,
    title = "Reflection high energy electron diffraction observation of exchange reaction dynamics on InAs surfaces",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1994",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120222-100154823",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.587063",
    volume = "12"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120308-070903192,
    title = "X-ray photoelectron spectroscopy investigation of the mixed anion GaSb/InAs heterointerface",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1993",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120308-070903192",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.586952",
    volume = "11"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120307-105358808,
    title = "n-CdSe/p-ZnTe based wide band-gap light emitters: Numerical simulation and design",
    journal = "Journal of Applied Physics",
    year = "1993",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120307-105358808",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.352761",
    volume = "73"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:YUEprb92,
    title = "Interfacial reactions and band offsets in the AlSb/GaSb/ZnTe material system",
    journal = "Physical Review B",
    year = "1992",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:YUEprb92",
    id = "record",
    issn = "0163-1829",
    doi = "10.1103/PhysRevB.46.13379",
    volume = "46"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:PHIapl92,
    title = "Proposal and verification of a new visible light emitter based on wide band gap II-VI semiconductors",
    journal = "Applied Physics Letters",
    year = "1992",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:PHIapl92",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.108353",
    volume = "61"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:LIUjvstb92,
    title = "Schottky barrier induced injecting contact on wide band gap semiconductors",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1992",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:LIUjvstb92",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.586320",
    volume = "10"
}