Vahala, Kerry J.

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• Vahala, Kerry J.; Lebens, John A.; et el. (1990) Quantum wire and quantum dot semiconductor lasers; ISBN 0-8194-0257-5; 120-129; 10.1117/12.18115
• Zarem, H. A.; Lebens, J. A.; et el. (1989) Effect of Al mole fraction on carrier diffusion lengths and lifetimes in AlxGa1−xAs; Applied Physics Letters; Vol. 55; No. 25; 2622-2624; 10.1063/1.101955
• Sercel, P. C.; Zarem, H. A.; et el. (1989) A novel technique for the direct determination of carrier diffusion lengths in GaAs/AlGaAs heterostructures using cathodoluminescence; ISBN 0-7803-0817-4; 285-288; 10.1109/IEDM.1989.74280
• Sercel, Peter C.; Lebens, John A.; et el. (1989) Quantitative measurement of the composition of Al_xGa_(1−x)As heterostructures using a simple backscattered electron detector; Review of Scientific Instruments; Vol. 60; No. 12; 3775-3778; 10.1063/1.1140489
• Zarem, H. A.; Sercel, P. C.; et el. (1989) Direct determination of the ambipolar diffusion length in GaAs/AlGaAs heterostructures by cathodoluminescence; Applied Physics Letters; Vol. 55; No. 16; 1647-1649; 10.1063/1.102226
• Newkirk, Michael A. and Vahala, Kerry J. (1989) Measurement of the fundamental modulation response of a semiconductor laser to millimeter wave frequencies by active-layer photomixing; Applied Physics Letters; Vol. 55; No. 10; 939-941; 10.1063/1.101730
• Hoenk, Michael E.; Nieh, C. W.; et el. (1989) Compositional modulation in AlxGa1−xAs epilayers grown by molecular beam epitaxy on the (111) facets of grooves in a nonplanar substrate; Applied Physics Letters; Vol. 55; No. 1; 53-55; 10.1063/1.102263
• Zarem, Hal A.; Sercel, Peter C.; et el. (1989) Nanometer scale wire structures fabricated by diffusion-induced selective disordering of a GaAs(AlGaAs) quantum well; Applied Physics Letters; Vol. 54; No. 26; 2692-2694; 10.1063/1.101037
• Zarem, Hal; Vahala, Kerry; et el. (1989) The Effects Of Fabricational Variations On Quantum Wire Laser Gain Spectra And Performance; ISBN 819400785; 184-191; 10.1117/12.976370
• Vahala, Kerry J.; Newkirk, Michael A.; et el. (1989) The optical gain lever: A novel gain mechanism in the direct modulation of quantum well semiconductor lasers; Applied Physics Letters; Vol. 54; No. 25; 2506-2508; 10.1063/1.101076
• Vahala, Kerry J. and Newkirk, Michael A. (1989) Parasitic-free modulation of semiconductor lasers; IEEE Journal of Quantum Electronics; Vol. 25; No. 6; 1393-1398; 10.1109/3.29274
• Hoenk, Michael E.; Chen, Howard Z.; et el. (1989) Cathodoluminescence measurement of an orientation dependent aluminum concentration in AlxGa1−xAs epilayers grown by molecular beam epitaxy on a nonplanar substrate; Applied Physics Letters; Vol. 54; No. 14; 1347-1349; 10.1063/1.100711
• Zarem, Hal; Vahala, Kerry; et el. (1989) Gain spectra of quantum wires with inhomogeneous broadening; IEEE Journal of Quantum Electronics; Vol. 25; No. 4; 705-712; 10.1109/3.17334
• Newkirk, Michael A. and Vahala, Kerry J. (1989) Low-temperature measurement of the fundamental frequency response of a semiconductor laser by active-layer photomixing; Applied Physics Letters; Vol. 54; No. 7; 600-602; 10.1063/1.100890
• Hoenk, Michael E. and Vahala, Kerry J. (1989) Cathodoluminescence system for a scanning electron microscope using an optical fiber for light collection; Review of Scientific Instruments; Vol. 60; No. 2; 226-230; 10.1063/1.1140466
• Hoenk, Michael E. and Vahala, Kerry J. (1988) Cathodoluminescence of oval defects in GaAs/AlxGa1–xAs epilayers using an optical fiber light collection system; Applied Physics Letters; Vol. 53; No. 21; 2062-2064; 10.1063/1.100319
• Zarem, H. A.; Hoenk, M. E.; et el. (1988) Generation of 1180 Å period gratings with a Xe ion laser; Electronics Letters; Vol. 24; No. 22; 1366-1367
• Vahala, Kerry J. and Newkirk, Michael A. (1988) Equivalent circuit model for active-layer photomixing: Parasitic-free modulation of semiconductor lasers; Applied Physics Letters; Vol. 53; No. 13; 1141-1143; 10.1063/1.100038
• Derry, P. L.; Chen, T. R.; et el. (1988) Spectral and dynamic characteristics of buried-heterostructure single quantum well (Al,Ga)As lasers; Applied Physics Letters; Vol. 53; No. 4; 271-273; 10.1063/1.100144
• Vahala, Kerry J. and Zah, C. E. (1988) Effect of doping on the optical gain and the spontaneous noise enhancement factor in quantum well amplifiers and lasers studied by simple analytical expressions; Applied Physics Letters; Vol. 52; No. 23; 1945-1947; 10.1063/1.99584
• Newkirk, Michael A. and Vahala, Kerry J. (1988) Parasitic-free measurement of the fundamental frequency response of a semiconductor laser by active-layer photomixing; Applied Physics Letters; Vol. 52; No. 10; 770-772; 10.1063/1.99278
• Vahala, Kerry J. (1988) Quantum box fabrication tolerance and size limits in semiconductors and their effect on optical gain; IEEE Journal of Quantum Electronics; Vol. 24; No. 3; 523-530; 10.1109/3.157
• Arakawa, Y.; Vahala, K.; et el. (1987) Reduction of the field spectral linewidth in a quantum-box semiconductor laser and its experimental demonstration using a quantum well laser in a high magnetic field; Journal de Physique Colloques; Vol. 48; No. C5; 271-274; 10.1051/jphyscol:1987558
• Vahala, Kerry; Arakawa, Yasuhiko; et el. (1987) Reduction of the field spectrum linewidth of a multiple quantum well laser in a high magnetic field—spectral properties of quantum dot lasers; Applied Physics Letters; Vol. 50; No. 7; 365-367; 10.1063/1.98200
• Vahala, Kerry; Kyuma, Kazuo; et el. (1986) Narrow linewidth, single frequency semiconductor laser with a phase conjugate external cavity mirror; Applied Physics Letters; Vol. 49; No. 23; 1563-1565; 10.1063/1.97280
• Vahala, Kerry (1986) Corrections to the rate equation approximation for dynamic considerations in a semiconductor laser; Applied Physics Letters; Vol. 48; No. 20; 1340-1341; 10.1063/1.96954
• Arakawa, Y.; Vahala, K.; et el. (1986) Reduction of the spectral linewidth of semiconductor lasers with quantum wire effects—Spectral properties of GaAlAs double heterostructure lasers in high magnetic fields; Applied Physics Letters; Vol. 48; No. 6; 384-386; 10.1063/1.96559
• Arakawa, Y.; Vahala, K.; et el. (1985) Enhanced modulation bandwidth of GaAlAs double heterostructure lasers in high magnetic fields: Dynamic response with quantum wire effects; Applied Physics Letters; Vol. 47; No. 11; 1142-1144; 10.1063/1.96356
• Vahala, Kerry and Yariv, Amnon (1985) Application of an electronic wave-packet formalism to local-operator equations of motion for semiconductor lasers; Physical Review A; Vol. 32; No. 1; 345-356; 10.1103/PhysRevA.32.345
• Vahala, Kerry; Paslaski, Joel; et el. (1985) Observation of modulation speed enhancement, frequency modulation suppression, and phase noise reduction by detuned loading in a coupled-cavity semiconductor laser; Applied Physics Letters; Vol. 46; No. 11; 1025-1027; 10.1063/1.95799
• Lang, Robert J.; Vahala, Kerry J.; et el. (1985) The effect of spatially dependent temperature and carrier fluctuations on noise in semiconductor lasers; IEEE Journal of Quantum Electronics; Vol. 21; No. 5; 443-451
• Arakawa, Yasuhiko; Vahala, Kerry; et el. (1984) Quantum noise and dynamics in quantum well and quantum wire lasers; Applied Physics Letters; Vol. 45; No. 9; 950-952
• Vahala, Kerry and Yariv, Amnon (1984) Detuned loading in coupled cavity semiconductor lasers — effect on quantum noise and dynamics; Applied Physics Letters; Vol. 45; No. 5; 501-503; 10.1063/1.95316
• Vahala, Kerry and Yariv, Amnon (1983) Occupation fluctuation noise: A fundamental source of linewidth broadening in semiconductor lasers; Applied Physics Letters; Vol. 43; No. 2; 140-142; 10.1063/1.94260
• Yariv, Amnon and Vahala, Kerry (1983) On the high power limit of the laser linewidth; IEEE Journal of Quantum Electronics; Vol. 19; No. 6; 889-890
• Vahala, Kerry and Yariv, Amnon (1983) Semiclassical Theory of Noise in Semiconductor Lasers-Part I; IEEE Journal of Quantum Electronics; Vol. 19; No. 6; 1096-1101
• Vahala, Kerry and Yariv, Amnon (1983) Semiclassical Theory of Noise in Semiconductor Lasers-Part lI; IEEE Journal of Quantum Electronics; Vol. 19; No. 6; 1102-1109
• Vahala, K.; Chiu, L. C.; et el. (1983) On the linewidth enhancement factor alpha in semiconductor injection lasers; Applied Physics Letters; Vol. 42; No. 8; 631-633; 10.1063/1.94054
• Harder, Christoph; Vahala, Kerry; et el. (1983) Measurement of the linewidth enhancement factor alpha of semiconductor lasers; Applied Physics Letters; Vol. 42; No. 4; 328-330; 10.1063/1.93921
• Vahala, K.; Harder, Ch.; et el. (1983) Observation of relaxation resonance effects in the field spectrum of semiconductor lasers; Applied Physics Letters; Vol. 42; No. 3; 211-213; 10.1063/1.93894