Ury, Israel
- Kwong, Sze-Keung and Yariv, Amnon, et el. (1985) Conversion of optical path length to frequency by an interferometer using photorefractive oscillation; Applied Physics Letters; Vol. 47; No. 5; 460-462; 10.1063/1.96147
- Lau, K. Y. and Ury, I., et el. (1985) Passive and active mode locking of a semiconductor laser without an external cavity; Applied Physics Letters; Vol. 46; No. 12; 1117-1119; 10.1063/1.95727
- Lau, K. Y. and Bar-Chaim, N., et el. (1984) 11-GHz direct modulation bandwidth GaAlAs window laser on semi-insulating substrate operating at room temperature; Applied Physics Letters; Vol. 45; No. 4; 316-318; 10.1063/1.95276
- Bar-Chaim, N. and Lau, K. Y., et el. (1984) Monolithic optoelectronic integration of a GaAlAs laser, a field-effect transistor, and a photodiode; Applied Physics Letters; Vol. 44; No. 10; 941-943; 10.1063/1.94598
- Lau, K. Y. and Ury, I., et el. (1983) Superluminescent damping of relaxation resonance in the modulation response of GaAs lasers; Applied Physics Letters; Vol. 43; No. 4; 329-331; 10.1063/1.94344
- Bar-Chaim, N. and Lau, K. Y., et el. (1983) High-speed GaAlAs/GaAs p-i-n photodiode on a semi-insulating GaAs substrate; Applied Physics Letters; Vol. 43; No. 3; 261-262; 10.1063/1.94319
- Lau, K. Y. and Bar-Chaim, N., et el. (1983) Direct amplitude modulation of short-cavity GaAs lasers up to X-band frequencies; Applied Physics Letters; Vol. 43; No. 1; 1-3; 10.1063/1.94153
- Koren, Uziel and Margalit, Shlomo, et el. (1982) Recent developments in monolithic integration of InGaAsP/InP optoelectronic devices; IEEE Journal of Quantum Electronics; Vol. 18; No. 10; 1653-1662
- Ury, Israel and Lau, Kam Y., et el. (1982) Very high frequency GaAlAs laser field-effect transistor monolithic integrated circuit; Applied Physics Letters; Vol. 41; No. 2; 126-128; 10.1063/1.93425
- Bar-Chaim, N. and Harder, Ch., et el. (1982) Monolithic integration of a GaAlAs buried-heterostructure laser and a bipolar phototransistor; Applied Physics Letters; Vol. 40; No. 7; 556-557; 10.1063/1.93177
- Bar-Chaim, N. and Katz, J., et el. (1981) Buried heterostructure AlGaAs lasers on semi-insulating substrates; Electronics Letters; Vol. 17; No. 3; 108-109; 10.1049/el:19810077
- Katz, J. and Bar-Chaim, N., et el. (1980) A monolithic integration of GaAs/GaAlAs bipolar transistor and heterostructure laser; Applied Physics Letters; Vol. 37; No. 2; 211-213; 10.1063/1.91828
- Ury, I. and Margalit, S., et el. (1980) Whispering gallery lasers on semi-insulating GaAs substrates; Applied Physics Letters; Vol. 36; No. 8; 629-631; 10.1063/1.91631
- Wilt, D. and Bar-Chaim, N., et el. (1980) Low threshold Be implanted (GaAl)As laser on semi-insulating substrate; IEEE Journal of Quantum Electronics; Vol. 16; No. 4; 390-391; 10.1109/JQE.1980.1070500
- Bar-Chaim, N. and Lanir, M., et el. (1980) Be-implanted (GaAl)As stripe geometry lasers; Applied Physics Letters; Vol. 36; No. 4; 233-235; 10.1063/1.91457
- Yust, M. and Bar-Chaim, N., et el. (1979) A monolithically integrated optical repeater; Applied Physics Letters; Vol. 35; No. 10; 795-797; 10.1063/1.90939
- Ury, I. and Margalit, S., et el. (1979) Monolithic integration of an injection laser and a metal semiconductor field effect transistor; Applied Physics Letters; Vol. 34; No. 7; 430-431; 10.1063/1.90824
- Lee, C. P. and Margalit, S., et el. (1978) Integration of an injection laser with a Gunn oscillator on
a semi-insulating GaAs substrates; Applied Physics Letters; Vol. 32; No. 12; 806-807; 10.1063/1.89922
- Lee, C. P. and Margalit, S., et el. (1978) GaAs-GaAIAs injection lasers on semi-insulating substrates using laterally diffused junctions; Applied Physics Letters; Vol. 32; No. 7; 410-412; 10.1063/1.90087