Tanabe, Katsuaki

Combined from CaltechAUTHORS

• Nakayama, Keisuke and Tanabe, Katsuaki, et el. (2008) Plasmonic nanoparticle enhanced light absorption in GaAs solar cells; Applied Physics Letters; Vol. 93; No. 12; Art. No. 121904; 10.1063/1.2988288
• Nakayama, Keisuke and Tanabe, Katsuaki, et el. (2008) Surface plasmon enhanced photocurrent in thin GaAs solar cells; ISBN 9780819472670; Nanoscale Photonic and Cell Technologies for Photovoltaics; Art. No. 704708; 10.1117/12.795469
• Nakayama, Keisuke and Tanabe, Katsuaki, et el. (2008) Improved electrical properties of wafer-bonded p-GaAs/n-InP interfaces with sulfide passivation; Journal of Applied Physics; Vol. 103; No. 9; Art. No. 094503; 10.1063/1.2912717
• Tanabe, Katsuaki and Nakayama, Keisuke, et el. (2008) Plasmon-enhanced absorption and photocurrent in ultrathin GaAs solar cells with metallic nanostructures; ISBN 978-1-4244-1640-0; 33rd IEEE Photovoltaic Specialists Conference; 1-4; 10.1109/PVSC.2008.4922457
• Zahler, James M. and Tanabe, Katsuaki, et el. (2007) Photocurrent enhancement in In_(0.53)Ga_(0.47)As solar cells grown on InP/SiO_2/Si transferred epitaxial templates; ISBN 9780819467973; High and Low Concentration for Solar Electric Applications II; Art. No. 664909; 10.1117/12.734801
• Zahler, James M. and Tanabe, Katsuaki, et el. (2007) High efficiency InGaAs solar cells on Si by InP layer transfer; Applied Physics Letters; Vol. 91; No. 1; Art. No. 012108; 10.1063/1.2753751
• Tanabe, Katsuaki and Fontcuberta i Morral, Anna, et el. (2006) Direct-bonded GaAs/InGaAs tandem solar cell; Applied Physics Letters; Vol. 89; No. 10; Art. No. 102106; 10.1063/1.2347280
• Tanabe, Katsuaki and Aiken, Daniel J., et el. (2006) Lattice-Mismatched Monolithic GAAS/INGAAS Two-Junction Solar Cells by Direct Wafer Bonding; ISBN 1-4244-0016-3; 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion; 768-771; 10.1109/WCPEC.2006.279569