<h1>Smith, Darryl L.</h1>
<h2>Article from <a href="https://authors.library.caltech.edu">CaltechAUTHORS</a></h2>
<ul>
<li>Ting, D. Z.-Y. and Cartoixà, X., el al. (2002) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20200103-162108300">Modeling Spin-Dependent Transport in InAs/GaSb/AlSb Resonant Tunneling Structures</a>; Journal of Computational Electronics; Vol. 1; No. 1-2; 147-151; <a href="https://doi.org/10.1023/a:1020748702245">10.1023/a:1020748702245</a></li>
<li>Wu, G. Y. and McGill, T. C., el al. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:WUGprb89a">k⋅p theory of semiconductor superlattice electronic structure in an applied magnetic field</a>; Physical Review B; Vol. 39; No. 9; 6060-6070; <a href="https://doi.org/10.1103/PhysRevB.39.6060">10.1103/PhysRevB.39.6060</a></li>
<li>Wu, G. Y. and McGill, T. C., el al. (1987) <a href="https://resolver.caltech.edu/CaltechAUTHORS:WUGjvsta87">Theoretical studies of electronic properties of semimagnetic superlattices in a magnetic field</a>; Journal of Vacuum Science and Technology B; Vol. 5; No. 5; 3096-3101; <a href="https://doi.org/10.1116/1.574224">10.1116/1.574224</a></li>
<li>Mailhiot, C. and McGill, T. C., el al. (1984) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MAIjvstb84">New approach to the k·p theory of semiconductor superlattices</a>; Journal of Vacuum Science and Technology B; Vol. 2; No. 3; 371-375; <a href="https://doi.org/10.1116/1.582826">10.1116/1.582826</a></li>
<li>Smith, D. L. and McGill, T. C. (1984) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20200318-154418910">HgTe-CdTe Superlattices</a>; Journal de Physique Colloques; Vol. 45; No. C5; 509-513; <a href="https://doi.org/10.1051/jphyscol:1984575">10.1051/jphyscol:1984575</a></li>
<li>Zur, A. and McGill, T. C., el al. (1983) <a href="https://resolver.caltech.edu/CaltechAUTHORS:ZURprb83">Fermi-level position at a semiconductor-metal interface</a>; Physical Review B; Vol. 28; No. 4; 2060-2067; <a href="https://doi.org/10.1103/PhysRevB.28.2060">10.1103/PhysRevB.28.2060</a></li>
<li>Zur, A. and McGill, T. C., el al. (1983) <a href="https://resolver.caltech.edu/CaltechAUTHORS:ZURjvstb83">Summary Abstract: The effect of doping on Fermi level position at a semiconductor–metal interface</a>; Journal of Vacuum Science and Technology B; Vol. 1; No. 3; 608-609; <a href="https://doi.org/10.1116/1.582607">10.1116/1.582607</a></li>
<li>Mailhiot, C. and Smith, D. L., el al. (1983) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120712-124524007">Transport characteristics of L-point and Г-point electrons through GaAs-Ga_(1-x)Ai_xAs-GaAs(111} double heterojunctions</a>; Journal of Vacuum Science and Technology B; Vol. 1; No. 3; 637-642; <a href="https://doi.org/10.1116/1.582568">10.1116/1.582568</a></li>
<li>McGill, T. C. and Smith, D. L. (1983) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCGjvstb83">Summary Abstract: HgTe–CdTe superlattices</a>; Journal of Vacuum Science and Technology B; Vol. 1; No. 2; 260-261; <a href="https://doi.org/10.1116/1.582498">10.1116/1.582498</a></li>
<li>Daw, M. S. and Smith, D. L., el al. (1981) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120717-163206505">Surface vacancies in II-VI and III-V zinc blende
semiconductors</a>; Journal of Vacuum Science and Technology; Vol. 19; No. 3; 508-512; <a href="https://doi.org/10.1116/1.571048">10.1116/1.571048</a></li>
<li>Daw, M. S. and Smith, D. L., el al. (1981) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120718-104550766">Surface core excitons in III-V semiconductors</a>; Journal of Vacuum Science and Technology; Vol. 19; No. 3; 388-389; <a href="https://doi.org/10.1116/1.571069">10.1116/1.571069</a></li>
<li>Daw, M. S. and Smith, D. L. (1980) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120718-141135113">Energy levels of semiconductor surface vacancies</a>; Journal of Vacuum Science and Technology; Vol. 17; No. 5; 1028-1031; <a href="https://doi.org/10.1116/1.570584">10.1116/1.570584</a></li>
<li>Hunter, A. T. and Smith, D. L., el al. (1980) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20180702-153655592">Near-band‐gap photoluminescence of Hg_(1−x)Cd_xTe</a>; Applied Physics Letters; Vol. 37; No. 2; 200-203; <a href="https://doi.org/10.1063/1.91824">10.1063/1.91824</a></li>
<li>Hunter, A. T. and Lyon, S. A., el al. (1979) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20180702-101720986">Transient decay of satellite lines of bound excitons in Si: P</a>; Physical Review B; Vol. 20; No. 6; 2431-2437; <a href="https://doi.org/10.1103/PhysRevB.20.2431">10.1103/PhysRevB.20.2431</a></li>
<li>Osbourn, G. C. and Smith, D. L. (1979) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120726-112918493">Carrier transport coefficients across GaAs-GaAIAs (100) interfaces</a>; Journal of Vacuum Science and Technology; Vol. 16; No. 5; 1529-1532; <a href="https://doi.org/10.1116/1.570242">10.1116/1.570242</a></li>
<li>Chen, M. and Lyon, S. A., el al. (1977) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20221004-680171300.29">Transients of the photoluminescence from EHD in doped and undoped Ge</a>; Il Nuovo Cimento B; Vol. 39; No. 2; 622-627; <a href="https://doi.org/10.1007/bf02725801">10.1007/bf02725801</a></li>
<li>Hammond, R. B. and Smith, D. L., el al. (1975) <a href="https://resolver.caltech.edu/CaltechAUTHORS:HAMprl75">Temperature dependence of silicon luminescence due to splitting of the indirect ground state</a>; Physical Review Letters; Vol. 35; No. 22; 1535-1538; <a href="https://doi.org/10.1103/PhysRevLett.35.1535">10.1103/PhysRevLett.35.1535</a></li>
<li>Smith, D. L. and Pan, D. S., el al. (1975) <a href="https://resolver.caltech.edu/CaltechAUTHORS:SMIprb75">Impact ionization of excitons in Ge and Si</a>; Physical Review B; Vol. 12; No. 10; 4360-4366; <a href="https://doi.org/10.1103/PhysRevB.12.4360">10.1103/PhysRevB.12.4360</a></li>
</ul>