[
    {
        "id": "authors:hdv2n-9g063",
        "collection": "authors",
        "collection_id": "hdv2n-9g063",
        "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20201111-190741605",
        "type": "book_section",
        "title": "Multi-Quantum well integrated stacks for detection in the mid-infrared",
        "book_title": "Advances in Integrated Optics",
        "author": [
            {
                "family_name": "Grav\u00e9",
                "given_name": "I.",
                "clpid": "Grav\u00e9-I"
            },
            {
                "family_name": "Shakouri",
                "given_name": "A.",
                "clpid": "Shakouri-A"
            },
            {
                "family_name": "Kuze",
                "given_name": "N.",
                "clpid": "Kuze-N"
            },
            {
                "family_name": "Yariv",
                "given_name": "A.",
                "clpid": "Yariv-A"
            }
        ],
        "contributor": [
            {
                "family_name": "Martellucci",
                "given_name": "S",
                "clpid": "Martellucci-S"
            },
            {
                "family_name": "Chester",
                "given_name": "A. N.",
                "clpid": "Chester-A-N"
            },
            {
                "family_name": "Bertolotti",
                "given_name": "M.",
                "clpid": "Bertolotti-M"
            }
        ],
        "abstract": "The development and improvement of advanced epitaxial crystal growth techniques such as molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) during the last two decades, has opened the door for the realization of devices in the quantum size regime. Quantum size phenomena can be observed when the experimental dimensions approach the order of magnitude of the DeBroglie wavelength associated with the system under investigation. The tools needed to understand and design artificial semiconductor structures, are known under the label \"bandgap engineering.\"",
        "doi": "10.1007/978-1-4615-2566-0_16",
        "isbn": "9781461360964",
        "publisher": "Springer US",
        "place_of_publication": "Boston, MA",
        "publication_date": "1994",
        "pages": "243-258"
    },
    {
        "id": "authors:xtdzy-3jz30",
        "collection": "authors",
        "collection_id": "xtdzy-3jz30",
        "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20201121-191743628",
        "type": "book_section",
        "title": "Multi \u03bb controlled operation of quantum well IR detectors using electric field switching and rearrangement",
        "book_title": "Quantum Well Intersubband Transition Physics and Devices",
        "author": [
            {
                "family_name": "Shakouri",
                "given_name": "A.",
                "clpid": "Shakouri-A"
            },
            {
                "family_name": "Grav\u00e9",
                "given_name": "I.",
                "clpid": "Grav\u00e9-I"
            },
            {
                "family_name": "Xu",
                "given_name": "Y.",
                "orcid": "0000-0001-5849-032X",
                "clpid": "Xu-Yong-Physics"
            },
            {
                "family_name": "Yariv",
                "given_name": "A.",
                "clpid": "Yariv-A"
            }
        ],
        "contributor": [
            {
                "family_name": "Liu",
                "given_name": "H. C.",
                "clpid": "Liu-H-C"
            },
            {
                "family_name": "Levine",
                "given_name": "B. F.",
                "clpid": "Levine-B-F"
            },
            {
                "family_name": "Andersson",
                "given_name": "J. Y.",
                "clpid": "Andersson-J-Y"
            }
        ],
        "abstract": "We describe a new mode of operating quantum well infrared photodetectors which is based on electric field domain formation and readjustment. The domain readjustment and electric field spatial redistribution results from an interplay between the fixed applied voltage and the quantum tunneling physics. The paper will describe the relevant theoretical background and present supporting data. Also described will be the application of domain switching to attain multi \u03bb response of such detectors.",
        "doi": "10.1007/978-94-011-1144-7_11",
        "isbn": "9789401045018",
        "publisher": "Springer Netherlands",
        "place_of_publication": "Dordrecht",
        "publication_date": "1994",
        "pages": "135-150"
    }
]