[ { "id": "authors:08knr-8kx41", "collection": "authors", "collection_id": "08knr-8kx41", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20110401-152013023", "type": "book_section", "title": "Whiskers, hyperhemispheres, and a honeymoon", "book_title": "IRMMW-THz 2010 : 35th International Conference on Infrared, Millimeter, and Terahertz Waves", "author": [ { "family_name": "Rutledge", "given_name": "David", "clpid": "Rutledge-D-B" } ], "abstract": "I plan to make a few historical comments on early research in antennas for submillimeter waves, as the area was known in the 1970's. The initial focus was on understanding the limits of the tungsten whiskers that were then used as antennas. However, as integrated-circuit technology improved, it became clear that planar antennas on semiconductor substrates were needed. However, these antennas interact strongly with substrate modes. One way to eliminate the substrate modes is to put a lens on the back of the substrate and to couple power in through the lens. These substrate-lens coupled antennas are widely used today in laboratory instruments and radio astronomy. Another approach to suppressing the substrate modes is through a periodic antenna structure. This is the basis for the grid amplifier, which combines the outputs of large numbers of transistors in free space. This allows much more transmitter power than was previously possible from solid-state devices. The Wavestream Corporation was founded to develop this technology. The company's best-selling product is a 50-W amplifier for 30-GHz satellite uplinks. Several thousand amplifiers have been sold to date.", "doi": "10.1109/ICIMW.2010.5612390", "isbn": "978-1-4244-6657-3", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "2010", "pages": "1-1" }, { "id": "authors:0d13v-2ny22", "collection": "authors", "collection_id": "0d13v-2ny22", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20170329-165404478", "type": "book_section", "title": "Global stability analysis and stabilization of power amplifier", "book_title": "2008 Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits", "author": [ { "family_name": "Su\u00e1rez", "given_name": "Almudena", "clpid": "Su\u00e1rez-A" }, { "family_name": "Jeon", "given_name": "Sanggeun", "clpid": "Jeon-Sanggeun" }, { "family_name": "Rutledge", "given_name": "David", "clpid": "Rutledge-D-B" } ], "abstract": "Power amplifiers often exhibit undesired behavior from certain input power value which cannot be predicted with a small-signal stability analysis. Among the commonly observed undesired phenomena are spurious oscillations, frequency divisions, hysteresis or chaos. In this contribution, simulation tools are presented, enabling an in-depth study of the origin and characteristics of these phenomena. The developed global stability analysis and stabilization tools have allowed an efficient suppression of the undesired behavior in a switching-mode power amplifier, with minimum degradation of the amplifier performance, in terms of drain efficiency and output power.", "doi": "10.1109/INMMIC.2008.4745722", "isbn": "978-1-4244-2645-4", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "2008-11", "pages": "87-90" }, { "id": "authors:y9qeg-hr254", "collection": "authors", "collection_id": "y9qeg-hr254", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20170329-155930785", "type": "book_section", "title": "A Near-Field Modulation Technique Using Antenna Reflector Switching", "book_title": "2008 IEEE International Solid-State Circuits Conference - Digest of Technical Papers", "author": [ { "family_name": "Babakhani", "given_name": "Aydin", "clpid": "Babakhani-A" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" }, { "family_name": "Hajimiri", "given_name": "Ali", "orcid": "0000-0001-6736-8019", "clpid": "Hajimiri-A" } ], "abstract": "This paper presents a near-field reflector switching technique that can generate independently controlled modulated signals for sufficiently different angles of radiation. This technique can be used either to transmit different data in different directions simultaneously, or to generate the correct signal constellation only in the desired direction and scrambled ones for other angles, creating a secure communication link. This approach is also conducive to power-efficient switching PAs, even for wideband non-constant envelope modulation schemes, enabling fast and power-efficient transmitter architectures.", "doi": "10.1109/ISSCC.2008.4523120", "isbn": "978-1-4244-2010-0", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "2008-02", "pages": "188-189+605" }, { "id": "authors:50d8c-p4g50", "collection": "authors", "collection_id": "50d8c-p4g50", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20170419-140611625", "type": "book_section", "title": "mm-wave phased arrays in silicon with integrated antennas", "book_title": "2007 IEEE Antennas and Propagation International Symposium", "author": [ { "family_name": "Babakhani", "given_name": "A.", "clpid": "Babakhani-A" }, { "family_name": "Rutledge", "given_name": "D. B.", "clpid": "Rutledge-D-B" }, { "family_name": "Hajimiri", "given_name": "A.", "orcid": "0000-0001-6736-8019", "clpid": "Hajimiri-A" } ], "abstract": "This work demonstrates W-band integrated dipole antennas and a four channel phased transceiver implemented in IBM 130 nm silicon germanium BiCMOS process. The chip includes the complete receiver, transmitter, signal generation blocks, phase shifters, and on-chip dipole antennas. A hemispherical silicon lens with diameter of about one inch is also used to remove the substrate modes. Measurement results show a maximum antenna gain of about +8 dB.", "doi": "10.1109/APS.2007.4396510", "isbn": "978-1-4244-0877-1", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "2007-06", "pages": "4369-4372" }, { "id": "authors:jdhz8-dk883", "collection": "authors", "collection_id": "jdhz8-dk883", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:JEOims05", "type": "book_section", "title": "A 2.7-kW, 29-MHz class-E/F/sub odd/ amplifier with a distributed active transformer", "book_title": "IEEE MTT-S International Microwave Symposium Digest, 2005", "author": [ { "family_name": "Jeon", "given_name": "Sanggeun", "clpid": "Jeon-S" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "abstract": "A Class-E/Fodd high power amplifier (PA) using the distributed active transformer (DAT) is demonstrated at 29MHz. The DAT combines the output power from four VDMOS push-pull pairs. The zero voltage switching (ZVS) condition is investigated and modified for the Class-E/Fodd amplifier with a non-ideal output transformer. All lumped elements including the DAT and the transistor package are modeled and optimized to achieve the ZVS condition and the high drain efficiency. The PA exhibits 2.7kW output power with 79% drain efficiency and 18dB gain at 29MHz.", "doi": "10.1109/MWSYM.2005.1517115", "isbn": "0780388461", "publisher": "IEEE", "publication_date": "2005", "pages": "1927-1930" }, { "id": "authors:qvewz-vdk64", "collection": "authors", "collection_id": "qvewz-vdk64", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20110919-093354835", "type": "book_section", "title": "A Single Chip Two-stage W-band Grid Amplifier", "book_title": "2004 IEEE MTT-S International Microwave Symposium Digest", "author": [ { "family_name": "Cheung", "given_name": "Chun-Tung", "clpid": "Cheung-Chun-Tung" }, { "family_name": "DeLisio", "given_name": "Michael P.", "clpid": "DeLisio-M-P" }, { "family_name": "Rosenberg", "given_name": "James J.", "clpid": "Rosenberg-J-J" }, { "family_name": "Tsai", "given_name": "Roger", "clpid": "Tsai-Roger" }, { "family_name": "Kagiwada", "given_name": "Reynold", "clpid": "Kagiwada-R" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "contributor": [ { "family_name": "Denniston", "given_name": "David B.", "clpid": "Denniston-D-B" } ], "abstract": "The first monolithic grid amplifier using a cascade differential-pair amplifier unit cell has been designed and measured. The grid is packaged using reflection architecture with waveguide input and output. The measured gain at 82 GHz is 5.5 dB. The measured output power is 110 mW with 2.5 dB residual gain. The size of the amplifier module is 20 mm\u00d710 mm\u00d710 mm.", "doi": "10.1109/MWSYM.2004.1335805", "isbn": "0-7803-8331-1", "publisher": "IEEE", "place_of_publication": "Piscataway, N.J.", "publication_date": "2004-06", "pages": "79-82" }, { "id": "authors:4eex9-0x376", "collection": "authors", "collection_id": "4eex9-0x376", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20170517-174608017", "type": "book_section", "title": "Indoor wireless channel modeling from 2.4 to 24 GHz using a combined E/H-Plane 2D ray tracing method", "book_title": "IEEE Antennas and Propagation Society Symposium, 2004", "author": [ { "family_name": "Lu", "given_name": "Dai", "clpid": "Lu-Dai" }, { "family_name": "Rutledge", "given_name": "David", "clpid": "Rutledge-D-B" } ], "abstract": "Future wireless systems are moving to high frequencies for additional bandwidth and frequency reuse. This makes it very important to have accurate and time-efficient models for system planning. We have previously published measurement results for an indoor channel investigation from 2.4 GHz to 24 GHz. We now propose a new combined E/H-plane 2D ray tracing method. This method includes 2D ray-tracing calculations from both horizontal and vertical sections (E/H-planes). The method predicts loss accurately for both line-of-sight (LOS) and non-line-of-sight (NLOS) paths at five frequency bands from 2.4 GHz to 24 GHz. In addition, it predicts the delay spread for line-of-sight paths well, but fails for non-line-of-sight paths.", "doi": "10.1109/APS.2004.1330135", "isbn": "0-7803-8302-8", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "2004-06", "pages": "3641-3644" }, { "id": "authors:dyf8n-sr140", "collection": "authors", "collection_id": "dyf8n-sr140", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:AOKrfic03", "type": "book_section", "title": "A fully-integrated 1.8-V, 2.8-W, 1.9-GHz, CMOS power amplifier", "book_title": "IEEE Radio Frequency Integrated Circuits (RFIC 2003) Symposium", "author": [ { "family_name": "Aoki", "given_name": "I.", "clpid": "Aoki-I" }, { "family_name": "Kee", "given_name": "S.", "clpid": "Kee-S" }, { "family_name": "Rutledge", "given_name": "D.", "clpid": "Rutledge-D-B" }, { "family_name": "Hajimiri", "given_name": "A.", "orcid": "0000-0001-6736-8019", "clpid": "Hajimiri-A" } ], "contributor": [ { "family_name": "Quach", "given_name": "Tina" } ], "abstract": "This paper demonstrated the first 2-stage, 2.8W, 1.8V, 1.9GHz fully-integrated DAT power amplifier with 50\u03a9 input and output matching using 0.18\u03bcm CMOS transistors. It has a small-signal gain of 27dB. The amplifier provides 2.8W of power into a 50\u03a9 load with a PAE of 50%.", "isbn": "0-7803-7694-3", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "2003-06", "pages": "199-202" }, { "id": "authors:yytw9-ht766", "collection": "authors", "collection_id": "yytw9-ht766", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20111025-145556596", "type": "book_section", "title": "V-band Transmission and Reflection Grid Amplifier Packaged in Waveguide", "book_title": "2003 IEEE MTT-S International Microwave Symposium Digest", "author": [ { "family_name": "Cheung", "given_name": "Chun-Tung", "clpid": "Cheung-C-T" }, { "family_name": "Tsai", "given_name": "Roger", "clpid": "Tsai-R" }, { "family_name": "Kagiwada", "given_name": "Reynold", "clpid": "Kagiwada-R" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "contributor": [ { "family_name": "Thal", "given_name": "H.", "clpid": "Thal-H" }, { "family_name": "Eitner", "given_name": "Paul", "clpid": "Eitner-P" } ], "abstract": "We designed and demonstrated two monolithic V-band grid amplifiers packaged in waveguides. We measured a 2 dB small-signal system gain for both transmission and reflection amplifiers. This is the first monolithic grid amplifier packaged and measured in a waveguide in the V-band.", "doi": "10.1109/MWSYM.2003.1210519", "isbn": "0-7803-7695-1", "publisher": "IEEE", "place_of_publication": "Piscataway, N.J.", "publication_date": "2003-06", "pages": "1863-1866" }, { "id": "authors:nw9kw-sv361", "collection": "authors", "collection_id": "nw9kw-sv361", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20111010-092308420", "type": "book_section", "title": "High-efficiency L-band transmit/receive module for synthetic aperture radar", "book_title": "Proceedings of the 2003 IEEE Radar Conference", "author": [ { "family_name": "Edelstein", "given_name": "Wendy N.", "clpid": "Edelstein-W-N" }, { "family_name": "Andricos", "given_name": "Constantine", "clpid": "Andricos-C" }, { "family_name": "Moussessian", "given_name": "Alina", "clpid": "Moussessian-A" }, { "family_name": "Wang", "given_name": "Feiyu", "clpid": "Wang-F" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "abstract": "Space-based radar places significant demands on the spacecraft resources (mass, power, data rate) and is therefore very expensive to implement. These systems typically require active phased-array antennas with hundreds or thousands of transmit/receive (T/R) modules distributed on the array. High-efficiency is a vitally important figure of merit for the radar T/R module because it reduces the power consumption and therefore makes best possible use of the limited power available. High efficiency also improves the thermal design and reliability. In this paper, we describe the design and preliminary results of a novel L-band (1250 MHz) T/R module technology to achieve ultra-high efficiencies. We will show that a dramatic improvement in overall T/R module efficiency is possible using high-efficiency class-E/F amplifiers. The T/R module performance goals are to achieve an overall module efficiency greater than 70% with a minimum of 30-W output power at L-band frequencies.", "doi": "10.1109/NRC.2003.1203408", "isbn": "0-7803-7920-9", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "2003", "pages": "238-243" }, { "id": "authors:46vzc-84e09", "collection": "authors", "collection_id": "46vzc-84e09", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20111102-110312140", "type": "book_section", "title": "A Waveguide Mode-Converter Feed for a 5-W, 34-GHz Grid Amplifier", "book_title": "2002 IEEE MTT-S International Microwave Symposium digest", "author": [ { "family_name": "Cheung", "given_name": "Chun-Tung", "clpid": "Cheung-C-T" }, { "family_name": "Hacker", "given_name": "Jonathan B.", "clpid": "Hacker-J-B" }, { "family_name": "Nagy", "given_name": "Gabor", "clpid": "Nagy-G" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "contributor": [ { "family_name": "Hamilton", "given_name": "R.", "clpid": "Hamilton-R" }, { "family_name": "Chiang", "given_name": "Norman", "clpid": "Chiang-N" }, { "family_name": "Taylor", "given_name": "Aurea", "clpid": "Taylor-A" } ], "abstract": "We have demonstrated a compact waveguide mode converter that excites a combination of TE_(10) and TE_(30) modes for feeding a grid amplifier. The length of the mode converter is only 13mm. The effective transmitter power (ETP) at 34GHz is 5W, with a gain of 5.5dB and a power-added efficiency (PAE) of 21%. The supply voltage is 3V, with a bias current of 5.6A. These results are comparable to those reported earlier for the same grid-amplifier design measured in free space. A spurious oscillation with a broad radiation pattern was observed at 33.6GHz with an effective isotropic radiated power (EIRP) of 23mW. This oscillation was suppressed when the grid was operating at high power levels, and disappeared entirely at output powers above 4.5W.", "doi": "10.1109/MWSYM.2002.1012145", "isbn": "0-7803-7239-5", "publisher": "IEEE", "place_of_publication": "Piscataway, N.J", "publication_date": "2002-06", "pages": "1523-1526" }, { "id": "authors:m5yxt-bq245", "collection": "authors", "collection_id": "m5yxt-bq245", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:AOKcicc01", "type": "book_section", "title": "A 2.4-GHz, 2.2-W, 2-V fully-integrated CMOS circular-geometry active-transformer power amplifier", "book_title": "IEEE Conference on Custom Integrated Circuits (CICC 2001), San Diego, CA, 6-9 May 2001", "author": [ { "family_name": "Aoki", "given_name": "Ichiro", "clpid": "Aoki-I" }, { "family_name": "Kee", "given_name": "Scott D.", "clpid": "Kee-S-D" }, { "family_name": "Rutledge", "given_name": "David", "clpid": "Rutledge-D-B" }, { "family_name": "Hajimiri", "given_name": "Ali", "orcid": "0000-0001-6736-8019", "clpid": "Hajimiri-A" } ], "abstract": "A 2.4-GHz, 2.2-W, 2-V fully integrated circular geometry power amplifier with 50 \u03a9 input and output matching is fabricated using 2.5V, 0.35 pm CMOS transistors. It can also produce 450mW using a 1V supply. Harmonic suppression is 64dB or better. An on-chip circular-geometry active-transformer is used to combine several push-pull low-voltage amplifiers efficiently to produce a larger output power while maintaining a 50 \u03a9 match. This new on-chip power combining and impedance matching method uses virtual ac grounds and magnetic couplings extensively to eliminate the need for any off-chip component such as wirebonds. It also desensitizes the operation of the amplifier to the inductance of bonding wires and makes the design more reproducible. This new topology makes possible a fully-integrated 2.2W, 2.4GHz, low voltage CMOS power amplifier for the first time.", "doi": "10.1109/CICC.2001.929723", "isbn": "0-7803-6591-7", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "2001-05", "pages": "57-60" }, { "id": "authors:ceg4c-kdn47", "collection": "authors", "collection_id": "ceg4c-kdn47", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20120110-085705786", "type": "book_section", "title": "A Novel Dielectric Loaded Antenna for Wireless Applications", "book_title": "1999 IEEE Antennas and Propagation Society International Symposium", "author": [ { "family_name": "Cheung", "given_name": "Chun-Tung", "clpid": "Cheung-C-T" }, { "family_name": "Liu", "given_name": "Cheh-Ming", "clpid": "Liu-C-M" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "abstract": "A new modified gamma-matched dielectric-loaded antenna suitable for terrestrial cellular applications is presented. A lumped-element equivalent circuit model is developed based on the electrical contribution of different elements of the antenna. Measured, simulated and equivalent circuit model predicted return losses are compared to test the validity of our equivalent circuit model.", "doi": "10.1109/APS.1999.789068", "isbn": "0-7803-5639-x", "publisher": "IEEE", "place_of_publication": "Piscataway, N.J.", "publication_date": "1999-07", "pages": "38-41" }, { "id": "authors:jds6p-7zj60", "collection": "authors", "collection_id": "jds6p-7zj60", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20120110-151214532", "type": "book_section", "title": "Two Flux Weakening Schemes for Surface-Mounted Permanent-Magnet Synchronous Drives - Design and Transient Response Considerations", "book_title": "1999 Proceedings of the IEEE International Symposium on Industrial Electronics (ISIE '99)", "author": [ { "family_name": "Mari\u0107", "given_name": "Dragan S.", "clpid": "Mari\u0107-D-S" }, { "family_name": "Hiti", "given_name": "Silva", "clpid": "Hiti-S" }, { "family_name": "Stancu", "given_name": "Constantin C.", "clpid": "Stancu-C-C" }, { "family_name": "Nagashima", "given_name": "James M.", "clpid": "Nagashima-J-M" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "abstract": "Two recently published flux weakening schemes for surface-mounted permanent-magnet synchronous (SMPMS) drives have offered estimable advantages over previous solutions. The first scheme uses values of the voltage reference to generate an adequate flux weakening component of the stator current, whereas the second method detects an increase of the tracking error in torque-producing current component and uses the error signal for the flux weakening control. The viability of the algorithms has been demonstrated and the schemes have been compared and analyzed in steady state operation. The transient behavior is very important for electric vehicles and other high-performance applications. Here, we analyze the transient response characteristics of both schemes when a sudden change in the torque reference is received. The paper also describes an approach to practical regulator design and parameter selection for the flux weakening control section.", "doi": "10.1109/ISIE.1999.798693", "isbn": "0-7803-5662-4", "publisher": "IEEE", "place_of_publication": "New York, NY", "publication_date": "1999-07", "pages": "673-678" }, { "id": "authors:p9w6g-6eb60", "collection": "authors", "collection_id": "p9w6g-6eb60", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20111208-135509401", "type": "book_section", "title": "Robust flux weakening scheme for surface-mounted permanent-magnet synchronous drives employing an adaptive lattice-structure filter", "book_title": "APEC '99: Fourteenth Annual Applied Power Electronics Conference and Exposition", "author": [ { "family_name": "Mari\u0107", "given_name": "Dragan S.", "clpid": "Mari\u0107-D-S" }, { "family_name": "Hiti", "given_name": "Silva", "clpid": "Hiti-S" }, { "family_name": "Stancu", "given_name": "Constantin C.", "clpid": "Stancu-C-C" }, { "family_name": "Nagashima", "given_name": "James M.", "clpid": "Nagashima-J-M" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "abstract": "An advanced control structure for surface-mounted permanent-magnet synchronous (SMPMS) drives provides a stable, high performance operation in the flux weakening region, utilizing the over-modulation and six-step modes of the space vector modulation (SVM). An automatic transition into flux weakening is achieved by controlling the reference voltage magnitude. The fifth and seventh stator current harmonics of the fundamental frequency, generated in the over-modulation and six-step modes, propagate through the current control loops, resulting in the sixth harmonic in the reference voltage and deteriorating drive performance. To filter the sixth harmonic, an adaptive lattice-structure allpass-based notch filter is employed, providing minimal phase delay and complete attenuation of the sixth harmonic.", "doi": "10.1109/APEC.1999.749647", "isbn": "0-7803-5160-6", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "1999-03", "pages": "271-276" }, { "id": "authors:d9rer-ca054", "collection": "authors", "collection_id": "d9rer-ca054", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:PREims99", "type": "book_section", "title": "Modelling of quasi-optical arrays", "book_title": "1999 IEEE MTT-S International Microwave Symposium Digest, Anaheim, CA, 13-19 June 1999", "author": [ { "family_name": "Preventza", "given_name": "Polly", "clpid": "Preventza-P" }, { "family_name": "Dickman", "given_name": "Blythe", "clpid": "Dickman-B" }, { "family_name": "Sovero", "given_name": "Emilio", "clpid": "Sovero-E-A" }, { "family_name": "De Lisio", "given_name": "Michael P.", "clpid": "De-Lisio-M-P" }, { "family_name": "Rosenberg", "given_name": "James J.", "clpid": "Rosenberg-J-J" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "contributor": [ { "family_name": "Matloubian", "given_name": "Mehran" }, { "family_name": "Ponti", "given_name": "Elmira" } ], "abstract": "A model for analyzing quasi-optical grid amplifiers based on a finite-element electromagnetic simulator is presented. This model is deduced from the simulation of the whole unit cell and takes into account mutual coupling effects. By using this model, the gain of a 10\u00d710 grid amplifier has been accurately predicted. To further test the validity of the model three passive structures with different loads have been fabricated and tested using a new focused-beam network analyzer that we developed.", "doi": "10.1109/MWSYM.1999.779825", "isbn": "0-7803-5135-5", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "1999", "pages": "563-566" }, { "id": "authors:2adz3-ftv57", "collection": "authors", "collection_id": "2adz3-ftv57", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20120112-113455937", "type": "book_section", "title": "Submillimeter-wave sideband generation using a planar diode array", "book_title": "1998 IEEE MTT-S International Microwave Symposium Digest", "author": [ { "family_name": "Kurtz", "given_name": "David S.", "clpid": "Kurtz-D-S" }, { "family_name": "Hesler", "given_name": "Jeffrey L.", "clpid": "Hesler-J-L" }, { "family_name": "Haclker", "given_name": "Jonathan B.", "clpid": "Haclker-J-B" }, { "family_name": "Crowe", "given_name": "Thomas W.", "clpid": "Crowe-T-W" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" }, { "family_name": "Weikle", "given_name": "Robert M., II", "clpid": "Weikle-R-M-II" } ], "abstract": "A 36 element array of planar Schottky diodes is used to mix the output of a CO_2 pumped far infrared laser with a 1-20 GHz microwave source to generate tunable sidebands at 1.6 THz. The double sideband power was measured by heterodyne detection with a 1T23 corner cube Schottky diode for a calculated output power of 5.9 \u03bcW with a 28 dB conversion loss.", "doi": "10.1109/MWSYM.1998.700868", "isbn": "0-7803-4471-5", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "1998-06", "pages": "1903-1906" }, { "id": "authors:5c5wy-5h592", "collection": "authors", "collection_id": "5c5wy-5h592", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20111215-114116150", "type": "book_section", "title": "A low-cost class-E power amplifier with sine-wave drive", "book_title": "1998 IEEE MTT-S International Microwave Symposium Digest", "author": [ { "family_name": "Davis", "given_name": "John F.", "clpid": "Davis-J-F" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "abstract": "We present a 400 W class-E amplifier for industrial applications. The transistor is the International Rectifier IRFP450LC power MOSFET. The amplifier operates at 13.56 MHz and uses a drive level of 12 W to attain a drain efficiency of 86% and an overall efficiency of 84%. All harmonics are more than 40 dB below the carrier.", "doi": "10.1109/MWSYM.1998.705188", "isbn": "0-7803-4471-5", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "1998-06", "pages": "1113-1116" }, { "id": "authors:gswwx-jw761", "collection": "authors", "collection_id": "gswwx-jw761", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20120130-093057834", "type": "book_section", "title": "A Terahertz Grid Frequency Doubler", "book_title": "1997 IEEE MTT-S International Microwave Symposium digest", "author": [ { "family_name": "Moussessian", "given_name": "Alina", "clpid": "Moussessian-A" }, { "family_name": "Wanke", "given_name": "Michael C.", "clpid": "Wanke-M-C" }, { "family_name": "Li", "given_name": "Yongjun", "clpid": "Li-Y" }, { "family_name": "Chiao", "given_name": "Jung-Chih", "clpid": "Chiao-J-C" }, { "family_name": "Hegmann", "given_name": "Frank A.", "clpid": "Hegmann-F-A" }, { "family_name": "Allen", "given_name": "S. James", "clpid": "Allen-S-J" }, { "family_name": "Crowe", "given_name": "Thomas W.", "clpid": "Crowe-T-W" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "abstract": "We present a 144-element terahertz quasi-optical grid frequency doubler. The grid is a planar structure with bow-tie antennas as a unit cell each loaded with a planar Schottky diode. The grid has an output power of 5.5 mW at 1 THz for 3.1-\u03bcs, 500-GHz input pulses with a peak power of 36 W. This is the largest recorded output power for a multiplier at terahertz frequencies.", "doi": "10.1109/MWSYM.1997.602883", "isbn": "0-7803-3814-6", "publisher": "IEEE", "place_of_publication": "Piscataway, N.J.", "publication_date": "1997-06", "pages": "683-686" }, { "id": "authors:6mycz-xbx30", "collection": "authors", "collection_id": "6mycz-xbx30", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:PREims97", "type": "book_section", "title": "A 43-GHz AlInAs/GaInAs/InP HEMT grid oscillator", "book_title": "1997 IEEE MTT-S International Microwave Symposium Digest, Denver, CO, 8-13 June 1997", "author": [ { "family_name": "Preventza", "given_name": "Polly", "clpid": "Preventza-P" }, { "family_name": "Matloubian", "given_name": "Mehran", "clpid": "Matloubian-M" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "contributor": [ { "family_name": "Koepf", "given_name": "Gerhard A." }, { "family_name": "Huebner", "given_name": "Don" }, { "family_name": "Donovan", "given_name": "Joseph J." } ], "abstract": "A 36-element hybrid grid oscillator has been fabricated. The active devices are InP-based High Electron Mobility Transistors (HEMT's). The grid oscillates at 43 GHz with an effective radiated power of 200 mW. Measurements show the E and H-plane radiation patterns have side lobes 10 dB below the main beam. These results are a significant improvement over a previous millimeter-wave grid oscillator, which had a divided beam because of substrate modes", "doi": "10.1109/MWSYM.1997.602983", "isbn": "0-7803-3814-6", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "1997", "pages": "1057-1060" }, { "id": "authors:t70fh-tfc73", "collection": "authors", "collection_id": "t70fh-tfc73", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20120208-113853373", "type": "book_section", "title": "Monolithic 40-GHz 670-m W HBT Grid Amplifier", "book_title": "1996 IEEE MTT-S International Microwave Symposium Digest", "author": [ { "family_name": "Liu", "given_name": "Cheh-Ming", "clpid": "Liu-Cheh-Ming" }, { "family_name": "Sovero", "given_name": "Emilio A.", "clpid": "Sovero-E-A" }, { "family_name": "Ho", "given_name": "Wu Jing", "clpid": "Ho-Wu-Jing" }, { "family_name": "Higgins", "given_name": "J. A.", "clpid": "Higgins-J-A" }, { "family_name": "De Lisio", "given_name": "Michael P.", "clpid": "De-Lisio-M-P" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "abstract": "A 36-element monolithic grid amplifier has been fabricated. The active elements are pairs of heterojunction-bipolar-transistors. Measurements show a peak gain of 5 dB at 40 GHz with a 3-dB bandwidth of 1.8 GHz (4.5%). Here we also report comparisons of patterns and tuning curves between the measurements and theory. The grid includes base stabilizing capacitors which result in a highly stable grid. The maximum saturated output power is 670 mW at 40 GHz with a peak power-added efficiency of 4%. This is the first report of power measurements on the monolithic quasi-optical amplifier.", "doi": "10.1109/MWSYM.1996.511227", "isbn": "0-7803-3246-6", "publisher": "IEEE", "place_of_publication": "Piscataway, N.J.", "publication_date": "1996-06", "pages": "1123-1126" }, { "id": "authors:fbcg5-a3463", "collection": "authors", "collection_id": "fbcg5-a3463", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20120208-111422792", "type": "book_section", "title": "A 44-60 GHz Monolithic pHEMT Grid Amplifier", "book_title": "1996 IEEE MTT-S International Microwave Symposium Digest", "author": [ { "family_name": "De Lisio", "given_name": "Michael P.", "clpid": "De-Lisio-M-P" }, { "family_name": "Duncan", "given_name": "Scott W.", "clpid": "Duncan-S-W" }, { "family_name": "Tu", "given_name": "Der-Wei", "clpid": "Tu-D-W" }, { "family_name": "Weinreb", "given_name": "Sander", "orcid": "0000-0002-9353-6204", "clpid": "Weinreb-S" }, { "family_name": "Liu", "given_name": "Cheh-Ming", "clpid": "Liu-C-M" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "abstract": "We present a 36-element monolithic millimeter-wave grid amplifier. The grid operates in the U-band, using pseudomorphic High Electron Mobility Transistors (pHEMTs) as the active devices. The grid has a peak gain of 6.5 dB at 44 GHz. The grid can be tuned to operate from 44 GHz to 60 GHz by changing the positions of external polarizers and tuning slabs. At 60 GHz, the grid has a peak gain of 2.5 dB. Gain and tuning curves are consistent with theoretical predictions.", "doi": "10.1109/MWSYM.1996.511228", "isbn": "0-7803-3247-4", "publisher": "IEEE", "place_of_publication": "Piscataway, N.J.", "publication_date": "1996-06", "pages": "1127-1130" }, { "id": "authors:767t9-12605", "collection": "authors", "collection_id": "767t9-12605", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20120217-100159654", "type": "book_section", "title": "A 100-Element MODFET Grid Amplifier", "book_title": "1995 Digest IEEE Antennas and Propagation Society International Symposium", "author": [ { "family_name": "DeLisio", "given_name": "Michael P.", "clpid": "De-Lisio-M-P" }, { "family_name": "Liu", "given_name": "Cheh-Ming", "clpid": "Liu-C-M" }, { "family_name": "Moussessian", "given_name": "Alina", "clpid": "Moussessian-A" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" }, { "family_name": "Rosenberg", "given_name": "James J.", "clpid": "Rosenberg-J-J" } ], "abstract": "A 100-element quasi-optical amplifier is presented. The active devices are custom-fabricated modulation-doped field-effect transistors (MODFETs). Common-mode oscillations were suppressed using resistors in the input gate leads. The grid has 9 dB of gain at 10.1 GHz. The 3-dB bandwidth is 1.2 GHz. We present a model for the gain of the grid versus frequency and compare measurement with theory.", "doi": "10.1109/APS.1995.530259", "isbn": "0-7803-2719-5", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "1995-06", "pages": "1304-1307" }, { "id": "authors:nzjbq-res66", "collection": "authors", "collection_id": "nzjbq-res66", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20120217-102843662", "type": "book_section", "title": "Gain and Stability Models for HBT Grid Amplifiers", "book_title": "1995 Digest IEEE Antennas and Propagation Society International Symposium", "author": [ { "family_name": "Liu", "given_name": "Cheh-Ming", "clpid": "Liu-C-M" }, { "family_name": "Sovero", "given_name": "Emilio A.", "clpid": "Sovero-E-A" }, { "family_name": "DeLisio", "given_name": "Michael P.", "clpid": "De-Lisio-M-P" }, { "family_name": "Moussessian", "given_name": "Alina", "clpid": "Moussessian-A" }, { "family_name": "Rosenberg", "given_name": "James J.", "clpid": "Rosenberg-J-J" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "abstract": "A 16-element heterojunction bipolar transistor (HBT) grid amplifier has been fabricated with a peak gain of 11 dB at 9.9 GHz with a 3-dB bandwidth of 350 MHz. We report a gain analysis model for the grid and give a comparison of the measurement and theory. The measured patterns show the evidence of a common-mode oscillation. A stability model for the common-mode oscillation is developed. Based on the stability model, a lumped capacitor gives suitable phase shift of the circular function, thus stabilizing the grid. A second 18-element grid was fabricated, using this theory, with improved stability.", "doi": "10.1109/APS.1995.530256", "isbn": "0-7803-2719-5", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "1995-06", "pages": "1292-1295" }, { "id": "authors:dr87a-3p186", "collection": "authors", "collection_id": "dr87a-3p186", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20120216-111855906", "type": "book_section", "title": "40 GHz Monolithic Grid Amplifier", "book_title": "1995 53rd Annual Device Research Conference digest", "author": [ { "family_name": "Liu", "given_name": "Cheh-Ming", "clpid": "Liu-C-M" }, { "family_name": "Sovero", "given_name": "Emilio A.", "clpid": "Sovero-E-A" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "abstract": "A 36-element monolithic grid amplifier has been fabricated. The peak gain is 4 dB at 40 GHz with a 3-dB bandwidth of 800 MHz. We discuss the design and measurements for the monolithic grid amplifier. The grid includes base stabilizing capacitors which result in a highly stable grid. This is the first report of a successful monolithic grid amplifier.", "doi": "10.1109/DRC.1995.496285", "isbn": "0-7803-2788-8", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "1995-06", "pages": "92-93" }, { "id": "authors:kk81m-s2853", "collection": "authors", "collection_id": "kk81m-s2853", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:BAEmtts95", "type": "book_section", "title": "Metal mesh couplers using evanescent waves at millimeter and submillimeter wavelengths", "book_title": "IEEE MTT-S International Microwave Symposium Digest, 1995. Orlando, FL, 16-20 May 1995", "author": [ { "family_name": "Bae", "given_name": "Jongsuck", "clpid": "Bae-Jongsuck" }, { "family_name": "Chiao", "given_name": "Jung-Chih", "clpid": "Chiao-Jung-Chih" }, { "family_name": "Mizuno", "given_name": "Koji", "clpid": "Mizuno-Koji" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "abstract": "A metal mesh evanescent wave coupler which makes use of coupling of evanescent waves between a metal mesh and a tuning dielectric plate, has been developed as a quasioptical component for millimeter and submillimeter wavelengths. The coupling coefficient of the capacitive evanescent wave coupler can be changed more than 70 % by moving the silicon plate only 60 \u03bcm at around 53 GHz. The transmission properties of the evanescent wave couplers depending on the mesh period and the silicon plate thickness have been studied.", "doi": "10.1109/MWSYM.1995.405935", "isbn": "0-7803-2581-8", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "1995-05", "pages": "597-600" }, { "id": "authors:n84w9-6yf85", "collection": "authors", "collection_id": "n84w9-6yf85", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20120306-141427864", "type": "book_section", "title": "Grid-Oscillator Beam-Steering Array", "book_title": "1994 IEEE Antennas and Propagation Society International Symposium Digest", "author": [ { "family_name": "Li", "given_name": "Shijie", "clpid": "Li-S" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "abstract": "Recently Liao and York (see IEEE Trans. Microwave Theory Tech., vol.41, no.10, p.1810, 1993) showed that beam-steering can be achieved by detuning the end elements of a coupled-oscillator array. The advantage of this approach is that no phase shifters are required. Liao and York used a single line array of patch antennas. Here we report the results for a pair of 1\u00d74 HEMT line-grid oscillators at 11 GHz. This array can scan from -6.5\u00b0 to +5\u00b0 by changing the bias", "doi": "10.1109/APS.1994.407927", "isbn": "0-7803-2009-3", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "1994-06", "pages": "868-871" }, { "id": "authors:2xt2w-5qg30", "collection": "authors", "collection_id": "2xt2w-5qg30", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:BAEims94", "type": "book_section", "title": "Metal mesh couplers using optical tunneling effect at millimeter and submillimeter wavelengths", "book_title": "IEEE MTT-S International Microwave Symposium Digest, 1994. San Diego, CA.", "author": [ { "family_name": "Bae", "given_name": "Jongsuck", "clpid": "Bae-Jongsuck" }, { "family_name": "Chiao", "given_name": "Jung-Chih", "clpid": "Chiao-Jung-Chih" }, { "family_name": "Mizuno", "given_name": "Koji", "clpid": "Mizuno-Koji" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "abstract": "A new metal mesh coupler that makes use of a tunneling effect of evanescent waves between a metal mesh and a dielectric plate, has been proposed as a quasi-optical component for millimeter and submillimeter wavelengths. Theoretical calculation and experimental measurement performed from 40 GHz to 60 GHz show that the transmittance of the coupler can be changed more than 50 % for the variation of a spacing less than 0.18 mm between a capacitive mesh and a silicon plate at around 57 GHz.", "doi": "10.1109/MWSYM.1994.335238", "isbn": "0-7803-1778-5", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "1994-05", "pages": "787-790" }, { "id": "authors:1cdf5-rbk34", "collection": "authors", "collection_id": "1cdf5-rbk34", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20120306-124144454", "type": "book_section", "title": "A 10-Watt X-Band Grid Oscillator", "book_title": "1994 IEEE MTT-S International Microwave Symposium Digest", "author": [ { "family_name": "Hacker", "given_name": "Jonathan B.", "clpid": "Hacker-J-B" }, { "family_name": "De Lisio", "given_name": "Michael P.", "clpid": "De-Lisio-M-P" }, { "family_name": "Kim", "given_name": "Moonil", "clpid": "Kim-M" }, { "family_name": "Liu", "given_name": "Cheh-Ming", "clpid": "Liu-C-M" }, { "family_name": "Li", "given_name": "Shi-Jie", "clpid": "Li-S-J" }, { "family_name": "Wedge", "given_name": "Scott W.", "clpid": "Wedge-S-W" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "abstract": "A 100-transistor MESFET grid oscillator has been fabricated that generates an effective radiated power of 660 W at 9.8 GHz and has a directivity of 18.0 dB. This corresponds to a total radiated power of 10.3 W, or 103 mW per device. This is the largest recorded output power for a grid oscillator. The grid drain-source bias voltage is 7.4 V and the total drain current for the grid is 6.0 A, resulting in an overall dc-to-rf efficiency of 23%. The pattern of the SSB noise-to-carrier ratio was measured and found to be essentially independent of the radiation angle. The average SSB noise level was -87 dBc/Hz at an offset of 150 kHz from the carrier. An average improvement in the SSB noise-to-carrier ratio of 5 dB was measured for a 100-transistor grid compared to a 16-transistor grid", "doi": "10.1109/MWSYM.1994.335230", "isbn": "0-7803-1778-5", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "1994-05", "pages": "23-27" }, { "id": "authors:qrrbg-zg978", "collection": "authors", "collection_id": "qrrbg-zg978", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20190828-081037610", "type": "book_section", "title": "Millimeter wave performance of a sliding planar backshort", "book_title": "International Conference on Millimeter and Submillimeter Waves and Applications 1994", "author": [ { "family_name": "Lubecke", "given_name": "Victor M.", "clpid": "Lubecke-V-M" }, { "family_name": "McGrath", "given_name": "William R.", "clpid": "McGrath-W-R" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "contributor": [ { "family_name": "Afsar", "given_name": "Mohammed N.", "clpid": "Afsar-M-N" } ], "abstract": "A mechanically adjustable planar tuning element, for millimeter and submillimeter wave planar integrated circuits, has been developed and successfully demonstrated at 100 GHz. It functions analogously to a non-contacting waveguide backshort, with |s_(11)| \u2243 -0.3 db, yet can be fabricated with the simplicity of a planar circuit and scaled for use throughout the millimeter and submillimeter wave spectrum.", "doi": "10.1117/12.2303301", "isbn": "9780819415158", "publisher": "Society of Photo-Optical Instrumentation Engineers (SPIE)", "place_of_publication": "Bellingham, WA", "publication_date": "1994-01", "pages": "Art. No. 22507W" }, { "id": "authors:f4hbj-taw85", "collection": "authors", "collection_id": "f4hbj-taw85", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20190829-131532117", "type": "book_section", "title": "Microswitch beam-steering grid", "book_title": "International Conference on Millimeter and Submillimeter Waves and Applications 1994", "author": [ { "family_name": "Chiao", "given_name": "Jung-Chih", "clpid": "Chiao-Jung-Chih" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "contributor": [ { "family_name": "Afsar", "given_name": "Mohammed N.", "clpid": "Afsar-M-N" } ], "abstract": "We propose new microswitch beam-steering grids to operate at 90 GHz and 240 GHz. The microswitch beam-steering grid has potential advantages over mechanical-scanning devices or active beam-steering reflectors based on diode grids such as lower loss and simple control circuits. Simulations predict that a 4-bit controlled 10-layer microswitch beam-steering grid can have phase-shift resolution of 22.5\u00b0 with a loss of 1.6 dB and a maximum phase error of 5\u00b0 at 240 GHz.", "doi": "10.1117/12.2303298", "isbn": "9780819415585", "publisher": "Society of Photo-optical Instrumentation Engineers (SPIE)", "place_of_publication": "Bellingham, WA", "publication_date": "1994", "pages": "537-538" }, { "id": "authors:70rgm-w5226", "collection": "authors", "collection_id": "70rgm-w5226", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20120308-110618061", "type": "book_section", "title": "Performance and applications of a 100-element HBT grid amplifier", "book_title": "1993 Microwave Conference Proceedings (APMC '93)", "author": [ { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" }, { "family_name": "Kim", "given_name": "Moonil", "clpid": "Kim-M" }, { "family_name": "Sovero", "given_name": "Emilio A.", "clpid": "Sovero-E-A" }, { "family_name": "De Lisio", "given_name": "Michael P.", "clpid": "De-Lisio-M-P" }, { "family_name": "Hacker", "given_name": "Jonathan B.", "clpid": "Hacker-J-B" }, { "family_name": "Chiao", "given_name": "Jung-Chih", "clpid": "Chiao-J-C" }, { "family_name": "Li", "given_name": "Shi-Jie", "clpid": "Li-S-J" }, { "family_name": "Gagnon", "given_name": "David R.", "clpid": "Gagnon-D-R" }, { "family_name": "Rosenberg", "given_name": "James J.", "clpid": "Rosenberg-J-J" } ], "abstract": "A 100-element 10-GHz grid amplifier has been developed. The active devices in the grid are chips with heterojunction bipolar transistor (HBT) differential pairs that include a resistive network to provide self-bias to the base. The planar metal grid structure was empirically designed to provide effective coupling between the HBTs and free space. The peak gain of the grid was 10 dB at 10 GHz with a 3 dB bandwidth of 1 GHz. The input and output matches are better than 15 dB at 10 GHz. The maximum output power is 450 mW, and the minimum noise figure is 7 dB. Tests show that the grid is quite tolerant of failures-the output power dropped by only 1 dB when the 10% of the inputs were detuned. The device amplifies beams with incidence angles up to 30\u00b0 with less than a 3-dB drop in power. By providing external feedback with a twist reflector, the grid amplifier can be used as a broadband tunable source. This source could be tuned from 6.5 GHz to 11.5 GHz with a peak effective radiated power (ERP) of 6.3 W at 9.9 GHz.", "doi": "10.1109/APMC.1993.468469", "isbn": "0-7803-1352-6", "publisher": "IEEE", "place_of_publication": "Piscataway, N.J.", "publication_date": "1993-10", "pages": "38-41" }, { "id": "authors:f48ss-r8n15", "collection": "authors", "collection_id": "f48ss-r8n15", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20120329-104354710", "type": "book_section", "title": "A monolithic 35 GHz HBT quasi-optical grid oscillator", "book_title": "14th Annual IEEE GaAs IC Symposium: 1992 Technical Digest", "author": [ { "family_name": "Sovero", "given_name": "E. A.", "clpid": "Sovero-E-A" }, { "family_name": "Kim", "given_name": "Moonil", "clpid": "Kim-Moonil" }, { "family_name": "Weikle", "given_name": "R. M., II", "clpid": "Weikle-R-M-II" }, { "family_name": "Deakin", "given_name": "D. S.", "clpid": "Deakin-D-S" }, { "family_name": "Ho", "given_name": "W. J.", "clpid": "Ho-Wu-Jing" }, { "family_name": "Higgins", "given_name": "J. A.", "clpid": "Higgins-J-A" }, { "family_name": "Rutledge", "given_name": "D. B.", "clpid": "Rutledge-D-B" } ], "abstract": "The authors report on the fabrication and testing of a monolithic 35-GHz grid oscillator. The frequency of operation was 34.6-GHz at 13 dBm estimated ERP (equivalent radiated power). The device consists of an array of 6 by 6 HBT (heterojunction bipolar transistor) unit cells. The chip dimensions were 6 mm by 7 mm. Oscillators of this kind utilize the free-space propagation characteristics of electromagnetic beams to synchronize the operation of many spatially separated devices. Grid devices use optical techniques to provide electrical functions such as feedback and power combining. The frequency of operation is determined by the dimension of the unit cell and by the distance from the reflecting (feedback) back mirror. Higher frequencies require smaller unit cells, thus opening the possibility of very compact high-power millimeter-wave sources.", "doi": "10.1109/GAAS.1992.247279", "isbn": "0-7803-0773-9", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "1992-10", "pages": "305-308" }, { "id": "authors:kstyp-9y342", "collection": "authors", "collection_id": "kstyp-9y342", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20120329-095607685", "type": "book_section", "title": "A millimeter-wave slot-V antenna", "book_title": "1992 Digest IEEE Antennas and Propagation Society International Symposium", "author": [ { "family_name": "Moussessian", "given_name": "Alina", "clpid": "Moussessian-A" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "abstract": "A V-shaped slot antenna built on a dielectric substrate is presented. The antenna is a nonresonant, traveling-wave design, with a predicted impedance in the range from 50 \u03a9 to 80 \u03a9. Calculations indicate that this antenna should have a gain of 15 dB with 3 dB beamwidths of 10\u00b0 in the H plane and 64\u00b0 in the E plane. Pattern measurements at 90 GHz support the theory. It should be possible to equalize the two beamwidths with a cylindrical lens. The broad bandwidth and high gain characteristics make the slot- V a good candidate for picosecond optoelectronic measurements. Fabrication is simple, and it should be possible to make this antenna at wavelengths as short as 10 \u03bcm with conventional photolithography.", "doi": "10.1109/APS.1992.221703", "isbn": "0-7803-0730-5", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "1992-07", "pages": "1894-1897" }, { "id": "authors:2j85n-60c18", "collection": "authors", "collection_id": "2j85n-60c18", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20120322-112313208", "type": "book_section", "title": "Probe modeling for millimeter-wave integrated-circuit horn antennas", "book_title": "1992 Digest IEEE Antennas and Propagation Society International Symposium", "author": [ { "family_name": "Guo", "given_name": "Yong", "clpid": "Guo-Yong" }, { "family_name": "Chiao", "given_name": "Jung-Chih", "clpid": "Chiao-Jung-Chih" }, { "family_name": "Potter", "given_name": "Kent A.", "clpid": "Potter-K-A" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "abstract": "Integrated-circuit probe-excited horn-antenna arrays etched in silicon\nare well developed. They are a very promising class of antenna arrays for\nmilli-meter and submillimeter applications. Further development of this technology\ninvolves integrating mixers and amplifiers into the antenna arrays. In\nan effort to develop an antenna-mixer array based on the existing technology,\nvarious antenna probes inside the pyramidal horns have been examined on scaled\nmodel-horns at the microwave frequencies. In this paper, modeling results and\ndesign principles of these antenna probes have been presented, which include the\nresonant impedance, the operating frequency, and the bandwidth of the horn antennas.\nThese measurement results provide a guideline in designing probes for\nmillimeter/submillimeter-wave integrated-circuit horn-antenna-mixer arrays.", "doi": "10.1109/APS.1992.221438", "isbn": "0-7803-0730-5", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "1992-07", "pages": "2159-2162" }, { "id": "authors:8dvh0-07c66", "collection": "authors", "collection_id": "8dvh0-07c66", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20120315-145041263", "type": "book_section", "title": "A 10 GHz Quasi-Optical Grid Amplifier Using Integrated HBT Differential Pairs", "author": [ { "family_name": "Kim", "given_name": "Moonil", "clpid": "Kim-Moonil" }, { "family_name": "Sovero", "given_name": "E. A.", "clpid": "Sovero-E-A" }, { "family_name": "Ho", "given_name": "W. J.", "clpid": "Ho-Wu-Jing" }, { "family_name": "Hacker", "given_name": "J. B.", "clpid": "Hacker-J-B" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" }, { "family_name": "Rosenberg", "given_name": "James J.", "clpid": "Rosenberg-J-J" }, { "family_name": "Smith", "given_name": "R. Peter", "clpid": "Smith-R-P" } ], "abstract": "We report the fabrication and testing of a 10 GHz grid amplifier utilizing sixteen GaAs chips each\ncontaining an HBT differential pair plus integral bias/feedback resistors. The overall amplifier consists of\na 4x4 array of unit cells on an RT Duroid\u2122 board having a relative permittivity of 2.2. Each unit cell\nconsists of an emitter-coupled differential pair at the center, an input antenna which extends horizontally\nin both directions from the two base leads, an output antenna which extends vertically in both directions\nfrom the two collector leads, and high inductance bias lines. In operation, the active grid array is placed\nbetween a pair of crossed polarizers. The horizontally polarized input wave passes through the input\npolarizer and couples to the input leads. An amplified current then flows on the vertical leads, which\nradiate a vertically polarized amplified signal through the output polarizer. The polarizers serve dual\nfunctions, providing both input-output isolation as well as independent impedance matching for the input\nand output ports. The grid thus functions essentially as a free-space beam amplifier. Calculations indicate\nthat output powers of several watts per square centimeter of grid area should be attainable with optimized\nstructures.", "doi": "10.1109/DRC.1992.671900", "publisher": "IEEE", "publication_date": "1992-06" }, { "id": "authors:5d0wz-15086", "collection": "authors", "collection_id": "5d0wz-15086", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20170918-142442947", "type": "book_section", "title": "Quasi-optical solid-state microwave sources", "book_title": "Intense Microwave and Particle Beams III", "author": [ { "family_name": "Hacker", "given_name": "Jonathan B.", "clpid": "Hacker-J-B" }, { "family_name": "Weikle", "given_name": "Robert M., II", "clpid": "Weikle-R-M-II" }, { "family_name": "Kim", "given_name": "Moonil", "clpid": "Kim-Moonil" }, { "family_name": "De Lisio", "given_name": "Michael P.", "clpid": "De-Lisio-M-P" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "contributor": [ { "family_name": "Brandt", "given_name": "Howard E.", "clpid": "Brandt-H-E" } ], "abstract": "Quasi-optical power-combining offers the most promising method for extracting large amounts of power from solid-state devices in the microwave and millimeter-wave range. This technique can be applied to a variety of devices. The difficulties associated with traditional waveguides power-combiners such as skin-effect losses are eliminated because the signals are combined in free-space. The solid-state devices are embedded in a two-dimensional grid configuration and placed in a Fabry-Perot cavity. In this respect, the quasi-optical power-combiner is analogous to a laser oscillator in which the active medium of the laser is replaced with an array of active devices. The grid presents a reflection coefficient to an incident plane wave which is larger than unity and the resonator provides feedback to couple the devices together. The two-dimensional structure of the grid is amenable to modern photolithographic processing and potentially allows thousands of devices to be integrated monolithically.", "doi": "10.1117/12.137137", "isbn": "0-8194-0775-5", "publisher": "Society of Photo-Optical Instrumentation Engineers (SPIE)", "place_of_publication": "Bellingham, WA", "publication_date": "1992-04-01", "pages": "377-378" }, { "id": "authors:k5f0z-qsc03", "collection": "authors", "collection_id": "k5f0z-qsc03", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20120419-081631951", "type": "book_section", "title": "Beam Diffraction by a Planar Grid Structure at 93 GHz", "book_title": "1991 Antennas and Propagation Society International Symposium", "author": [ { "family_name": "Kim", "given_name": "Moonil", "clpid": "Kim-M" }, { "family_name": "Weikle", "given_name": "Robert M., II", "clpid": "Weikle-R-M-II" }, { "family_name": "Hacker", "given_name": "Jonathan B.", "clpid": "Hacker-J-B" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "abstract": "The idea of using diode grids for electronic beam steering was introduced by Lam et al [l]. As shown in Figure 1, when an incident beam reflects off the diode grid, the direction of the reflected wave can be controlled by progressively varying the ref1ection phase across the grid. The reflection phase of the diode grid can be controlled by varying the DC bias\non the diodes. Later, a monolithic diode grid was fabricated with l600 varactor diodes, and a relative phase shift of 70\u00b0 at 93 GHz was measured [2]. This work verified the transmission-line theory used to design the grid, but the phase shift was not sufficient to steer the beam, recently, Johansson [3] designed and built a passive planar grating reflector antenna that focused a beam. A rigorous moment-method solution was applied to choose a grating geometry to select the first-order diffracted wave. In this work, using\nthe transmission-line model approach, the goal was to demonstrate that the beam can be steered by building a grid structure without diodes to give a fixed beam shift. In these grids, diodes were replaced by gaps with different sizes to obtain different capacitances needed to steer a beam at 93 GHz. The result show a successful beam shift of 30\u00b0 with a loss of 2.5 dB.", "doi": "10.1109/APS.1991.174795", "isbn": "0-7803-0144-7", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "1991-06", "pages": "150-153" }, { "id": "authors:sp4dq-z0478", "collection": "authors", "collection_id": "sp4dq-z0478", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20120419-134544935", "type": "book_section", "title": "An X-Band MESFET Grid Oscillator with Gate Feedback", "book_title": "1991 Antennas and Propagation Society International Symposium", "author": [ { "family_name": "Weikle", "given_name": "Robert M., II", "clpid": "Weikle-R-M-II" }, { "family_name": "Kim", "given_name": "Moonil", "clpid": "Kim-M" }, { "family_name": "Hacker", "given_name": "Jonathan B.", "clpid": "Hacker-J-B" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "abstract": "In this work we present a design for a quasi-optical MESFET power-combining array that utilizes gate feedback. This circuit is different from previous MESFET grids that utilized packaged devices and source feedback to produce an oscillator at 5 GHz. The present configuration allows the drain and source leads to couple directly to the radiated field. Simulations indicate that this configuration can be used to build a high-frequency oscillator, A transmission-line model for the grid is presented and used to design a 25-element grid for operation at 10 GHz. Measurements show that the grid delivers an effective radiated power (ERP) of 2.4 W at 10.9 GHz.", "doi": "10.1109/APS.1991.174791", "isbn": "0-7803-0144-7", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "1991-06", "pages": "134-137" }, { "id": "authors:97n56-vbx74", "collection": "authors", "collection_id": "97n56-vbx74", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:HACapsis91", "type": "book_section", "title": "A 100-element Schottky diode grid mixer", "book_title": "Antennas and Propagation Society International Symposium (APSIS), 1991", "author": [ { "family_name": "Hacker", "given_name": "Jonathan B.", "clpid": "Hacker-J-B" }, { "family_name": "Weikle", "given_name": "Robert M., II", "clpid": "Weikle-R-M-II" }, { "family_name": "Kim", "given_name": "Moonil", "clpid": "Kim-M" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "abstract": "The authors present a 100-element planar grid mixer consisting of Schottky beam-lead diodes placed in bow-tie shaped unit cells. Preliminary results show that the reflection coefficient of this grid agrees well with theory. A grid conversion loss of 9.3 dB at 10 GHz has been measured. This grid of Schottky diodes is suitable for use as a quasi-optically coupled mixer. The mixer grid is attractive for millimeter-wave applications because of its low-loss quasi-optical coupling, and because its dynamic range can be increased by a factor of the number of devices in the grid. This is important for SIS (superconductor-insulator-superconductor) receivers where dynamic range is fundamentally limited.", "doi": "10.1109/APS.1991.174794", "isbn": "0780301455", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "1991", "pages": "146-149" }, { "id": "authors:jbr61-w6h59", "collection": "authors", "collection_id": "jbr61-w6h59", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20120508-133503684", "type": "book_section", "title": "Aperture efficiency of chemically etched horns at 93 GHz", "author": [ { "family_name": "Guo", "given_name": "Yong", "clpid": "Guo-Y" }, { "family_name": "Lee", "given_name": "Karen", "clpid": "Lee-K" }, { "family_name": "Stimson", "given_name": "Philip", "clpid": "Stimson-P" }, { "family_name": "Potter", "given_name": "Kent A.", "clpid": "Potter-K-A" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "abstract": "The aperture efficiency of monolithic two-dimensional horn imaging arrays has been optimized at 93 GHz. The imaging arrays consist of several silicon wafers into which arrays of pyramidal horns are etched chemically. Dipole antennas and detectors are suspended on thin silicon oxynitride membranes on one of the central silicon wafers about halfway down the horns. The devices are 7\u00d77 arrays with a 1 \u03bb opening and a 71\u00b0 flare angle. Antenna impedances have been measured on a low-frequency model. A variety of millimeter-wave dipole antennas and bolometers have been designed and tested. A large-area bismuth thin-film power meter is used to obtain accurate absolute power. The measured aperture efficiency improved from 44% to 72%. The highest system coupling efficiency with a lens was 36% including lens absorption and reflection losses.", "doi": "10.1109/APS.1990.115381", "publisher": "IEEE", "publication_date": "1990-05" }, { "id": "authors:qnsy8-r6z83", "collection": "authors", "collection_id": "qnsy8-r6z83", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20120510-082320592", "type": "book_section", "title": "Quasi-optical power-combining arrays", "author": [ { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" }, { "family_name": "Popovi\u0107", "given_name": "Zoya Basta", "clpid": "Popovi\u0107-Z-B" }, { "family_name": "Weikle", "given_name": "Robert M., II", "clpid": "Weikle-R-M-II" }, { "family_name": "Kim", "given_name": "Moonil", "clpid": "Kim-M" }, { "family_name": "Potter", "given_name": "Kent A.", "clpid": "Potter-K-A" }, { "family_name": "Compton", "given_name": "Richard C.", "clpid": "Compton-R-C" }, { "family_name": "York", "given_name": "Robert A.", "clpid": "York-R-A" } ], "abstract": "Semiconductor devices have limited power handling capabilities at high frequencies, particularly at millimeter-wave frequencies. A method is presented for overcoming this problem by combining the outputs of several devices quasi-optically in a resonator cavity. This method has been applied to a number of solid-state devices, including Gunn diodes and MESFETs. The devices do not require an external locking signal because they lock to a mode of the resonator cavity. Effective radiated powers of 22 watts for a 4\u00d74 array of Gunn diodes and 25 watts for a 10\u00d710 array of MESFETs have been achieved.", "doi": "10.1109/MWSYM.1990.99794", "publisher": "IEEE", "publication_date": "1990-05" }, { "id": "authors:yz3qn-pnh13", "collection": "authors", "collection_id": "yz3qn-pnh13", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20120510-102125873", "type": "book_section", "title": "A 100-Element MESFET Grid Oscillator", "author": [ { "family_name": "Weikle", "given_name": "Robert M., II", "clpid": "Weikle-R-M-II" }, { "family_name": "Popvi\u0107", "given_name": "Zoya B.", "clpid": "Popovi\u0107-Z-B" }, { "family_name": "Kim", "given_name": "Moonil", "clpid": "Kim-M" }, { "family_name": "Potter", "given_name": "Kent A.", "clpid": "Potter-K-A" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "abstract": "A planar grid oscillator which combines the outputs of 100 devices quasi-optically is presented. The planar configuration is attractive because it is compatible with present-day IC fabrication techniques. In addition, the grid's structure leads to a transmission-line model that can readily be applied to the design of larger grids in the future. This approach is particularly attractive for wafer-scale integration at millimeter wavelengths. The grid oscillates near 5 GHz and can be frequency tuned with mirror spacing from 4.8 GHz to 5.2 GHz. The far-field radiation patterns for the grid are shown. From the pattern, the directivity is calculated to be 16 dB. The ERP is measured to be 25 W. The DC input power is 3 W, and the power radiated from the grid is calculated to be 0.625 W. This gives a DC-to-RF efficiency of 20%.", "doi": "10.1109/APS.1990.115321", "publisher": "IEEE", "publication_date": "1990-05" }, { "id": "authors:vrqk5-9gj93", "collection": "authors", "collection_id": "vrqk5-9gj93", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20120524-095106887", "type": "book_section", "title": "Quasi-optical watt-level millimeter-wave monolithic solid-state diode-grid frequency multipliers", "author": [ { "family_name": "Hwu", "given_name": "R. J.", "clpid": "Hwu-R-J" }, { "family_name": "Sadwick", "given_name": "L. P.", "clpid": "Sadwick-L-P" }, { "family_name": "Luhmann", "given_name": "N. C., Jr.", "clpid": "Luhmann-N-C-Jr" }, { "family_name": "Rutledge", "given_name": "D. B.", "clpid": "Rutledge-D-B" }, { "family_name": "Sokolich", "given_name": "M.", "clpid": "Sokolich-M" }, { "family_name": "Hancock", "given_name": "B.", "clpid": "Hancock-B" } ], "abstract": "A monolithic planar array containing thousands of GaAs Barrier-Intrinsic-N^+ diodes have produced one watt output power at 100 GHz in a tripler configuration. Tripling efficiency of 8.5% has been obtained from approximately 4-mW incident power on each diode, in excellent agreement with the predictions of large-signal nonlinear circuit analysis of frequency multiplication. The device performance is limited by the parameters of the fabricated diodes. Significant improvement is expected with realizable diode parameters and optimized pumping condition.", "doi": "10.1109/MWSYM.1989.38907", "publisher": "IEEE", "publication_date": "1989-06" }, { "id": "authors:jpmxd-byj15", "collection": "authors", "collection_id": "jpmxd-byj15", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:HWUicwfit89", "type": "book_section", "title": "Highly efficient frequency triplers in the millimeter wave region incorporating a back-to-back configuration of two varactor diodes", "book_title": "International Conference on Millimeter Wave and Far-Infrared Technology, ICMWFT '89, Beijing, 19-23 June 1989", "author": [ { "family_name": "Hwu", "given_name": "R. J.", "clpid": "Hwu-R-J" }, { "family_name": "Sadwick", "given_name": "L. P.", "clpid": "Sadwick-L-P" }, { "family_name": "Luhmann", "given_name": "N. C., Jr.", "clpid": "Luhmann-N-C-Jr" }, { "family_name": "Rutledge", "given_name": "D. B.", "clpid": "Rutledge-D-B" }, { "family_name": "Sokolich", "given_name": "M.", "clpid": "Sokolich-M" } ], "abstract": "This paper reports on the recent development of monolithic frequency tripler array employing a back-to-back configuration of varactor diodes. Even harmonic idler\ncircuits are unnecessary in this design. Furthermore, no external dc bias is required. The arrangement results in highly efficient, easily-fabricated and inexpensive frequency triplers.", "isbn": "0-87942-717-5", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "1989-06", "pages": "100-106" }, { "id": "authors:baneb-t3h44", "collection": "authors", "collection_id": "baneb-t3h44", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:HWUiedm88", "type": "book_section", "title": "DC and millimeter-wave performance of watt-level barrier-intrinsic-n+ diode-grid frequency multiplier fabricated on III-V compound semiconductors", "author": [ { "family_name": "Hwu", "given_name": "R. J.", "clpid": "Hwu-R-J" }, { "family_name": "Sadwick", "given_name": "P.", "clpid": "Sadwick-P" }, { "family_name": "Luhmann, Jr.", "given_name": "N. C.", "clpid": "Luhmann-N-C-Jr" }, { "family_name": "Rutledge", "given_name": "D. B.", "clpid": "Rutledge-D-B" } ], "abstract": "This paper reports the fabrication and millimeter-wave performance of a new class of monolithic metal-semiconductor heterostructure devices, the Barrier- Intrinsic-N+ (BIN) diode-grid frequency multipliers, which are fabricated on III-V compound semiconductors. This work also involves the measurement of the DC and low frequency\nelectrical properties of the BIN diode-grid frequency multiplier. In addition, a new analytical model which accurately describes the structure has been developed and is presented for the first time.", "doi": "10.1109/IEDM.1988.32787", "publisher": "IEEE", "publication_date": "1988-12" }, { "id": "authors:n1hss-emk68", "collection": "authors", "collection_id": "n1hss-emk68", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20120607-134255568", "type": "book_section", "title": "An Alternative Approach for Designing Microwave Circuits using a Personal Computer", "author": [ { "family_name": "York", "given_name": "R. A.", "clpid": "York-R-A" }, { "family_name": "Compton", "given_name": "R. C.", "clpid": "Compton-R-C" }, { "family_name": "Kim", "given_name": "M.", "clpid": "Kim-M" }, { "family_name": "Wedge", "given_name": "S.", "clpid": "Wedge-S" }, { "family_name": "Rutledge", "given_name": "D. B.", "clpid": "Rutledge-D-B" } ], "abstract": "A computer-aided design (CAD) program, Puff, for designing microwave integrated circuits is presented. The program runs on an IBM PC, PS/2, or compatible computer, and features a single interactive-graphics screen which displays all aspects of the design. Circuit elements, such as transmission lines, coupled lines, and lumped elements, are selected from a parts list and drawn on the screen using cursor keys. The circuit analysis is then performed directly from the screen drawing. To demonstrate the various features of Puff, predictions for a 10-GHz patch antenna with a stub matching circuit are compared with measurements made with an HP 8510 network analyzer.", "doi": "10.1109/APS.1988.93975", "publisher": "IEEE", "publication_date": "1988-06" }, { "id": "authors:c4198-4vj87", "collection": "authors", "collection_id": "c4198-4vj87", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20120621-104347985", "type": "book_section", "title": "Diode-Grid Oscillators", "author": [ { "family_name": "Popovi\u0107", "given_name": "Zorana B.", "clpid": "Popovi\u0107-Z-B" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "abstract": "Loading a two-dimensional grid with active devices offers a means of combining the power of solid-state devices in the microwave and millimeter-wave range. The grid structure allows a large number of negative resistance devices to be combined. This approach is attractive because the active devices do not need an external locking signal, and the combining is done in free space. The loaded grid is a simple planar structure suitable for monolithic integration. Preliminary measurements on a nine-diode grid at 10 GHz show power-combining and frequency-locking without an external locking signal.", "doi": "10.1109/APS.1988.94103", "publisher": "IEEE", "publication_date": "1988-06" }, { "id": "authors:mewyd-pkg86", "collection": "authors", "collection_id": "mewyd-pkg86", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:HWUims88", "type": "book_section", "title": "Watt-level millimeter-wave monolithic diode-grid frequency multipliers", "author": [ { "family_name": "Hwu", "given_name": "R. J.", "clpid": "Hwu-R-J" }, { "family_name": "Jou", "given_name": "C. F.", "clpid": "Jou-C-F" }, { "family_name": "Lam", "given_name": "W. W.", "clpid": "Lam-W-W" }, { "family_name": "Lieneweg", "given_name": "U.", "clpid": "Lieneweg-U" }, { "family_name": "Streit", "given_name": "D. C.", "clpid": "Streit-D-C" }, { "family_name": "Luhmann", "given_name": "N. C., Jr.", "clpid": "Luhmann-N-C-Jr" }, { "family_name": "Maserjian", "given_name": "J.", "clpid": "Maserjian-J" }, { "family_name": "Rutledge", "given_name": "D. B.", "clpid": "Rutledge-D-B" } ], "abstract": "Monolithic planar arrays containing in excess of 1000 Schottky diodes have produced watt level output at 66 GHz in a doubler configuration in excellent agreement with large signal predictions of the frequency multiplication. Current efforts are concentrated on fabricating and developing arrays of novel barrier-intrinsic-N+ (BIN) diode which promise increased performance in tripler and quintupler configurations.", "doi": "10.1109/MWSYM.1988.22091", "publisher": "IEEE", "publication_date": "1988-05" }, { "id": "authors:c8d8z-r7533", "collection": "authors", "collection_id": "c8d8z-r7533", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20201104-070557013", "type": "book_section", "title": "Two-dimensional horn imaging arrays", "book_title": "1987 Twelth International Conference on Infrared and Millimeter Waves", "author": [ { "family_name": "Rebeiz", "given_name": "Gabriel M.", "clpid": "Rebeiz-G-M" }, { "family_name": "Guo", "given_name": "Yong", "clpid": "Guo-Yong" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" }, { "family_name": "Kasilingam", "given_name": "Dayalan P.", "clpid": "Kasilingam-D-P" } ], "abstract": "A two-dimensional horn imaging array has been demonstrated at 242 GHz. In this configuration, a dipole is suspended in a pyramidal horn on a 1-\u03bcm silicon-oxynitride membrane. This approach leaves room for low-frequency lines and processing electronics. Pattern measurements agree well with theory, and show no sidelobes and 3-dB beamwidth of 35\u00b0 and 46\u00b0 for the E and H planes respectively. Possible application areas include superconducting tunnel-junction receivers for radio astronomy and imaging arrays for plasma diagnostics and radiometry.", "doi": "10.1109/irmm.1987.9126997", "isbn": "9781728120393", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "1987-12", "pages": "224-225" }, { "id": "authors:qkgkq-jep11", "collection": "authors", "collection_id": "qkgkq-jep11", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20120626-153452574", "type": "book_section", "title": "Puff, an Interactive Microwave Computer Aided Design Program for Personal Computers", "author": [ { "family_name": "Compton", "given_name": "Richard C.", "clpid": "Compton-Richard-C" }, { "family_name": "Williams", "given_name": "Wyman L.", "clpid": "Williams-Wyman-L" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "abstract": "We will demonstrate a CAD program designed for the lay out\nand analysis of microstrip circuits. The program runs on the\nIBM PC or AT. Circuit elements are selected from a parts list\nand drawn on the screen using the cursor keys. The analysis\nmay then be performed, directly from the screen drawing. Puff\nhas been used by microwave students in classes at the California\nInstitute of Technology and the University of California at Los\nAngeles.", "doi": "10.1109/MWSYM.1987.1132508", "publisher": "IEEE", "publication_date": "1987-06-09" }, { "id": "authors:yf0b9-v0n13", "collection": "authors", "collection_id": "yf0b9-v0n13", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20170713-133132670", "type": "book_section", "title": "A class for computer-aided design and measurement of microstrip circuits", "author": [ { "family_name": "Rutledge", "given_name": "David", "clpid": "Rutledge-D-B" }, { "family_name": "Compton", "given_name": "Richard", "clpid": "Compton-R-C" }, { "family_name": "Williams", "given_name": "Wyman", "clpid": "Williams-W-L" }, { "family_name": "Popovi\u0107", "given_name": "Zorana", "clpid": "Popovi\u0107-Z-B" }, { "family_name": "Potter", "given_name": "Kent", "clpid": "Potter-K-A" } ], "abstract": "We are developing an innovative microwave-integrated-circuits class at Caltech that uses personal computers to design and analyze microstrip circuits, and to make the artwork and measurements. We have written an interactive microwave computer-aided-design program, Puff, that is quite fast at laying out and analyzing microstrip circuits. The students fabricate a different circuit each week and test them on a network analyzer controlled by a personal computer. The fabrication and measurement process is streamlined so that it all can be done in a single three-hour lab period.", "doi": "10.1109/APS.1987.1150017", "publisher": "IEEE", "publication_date": "1987-06" }, { "id": "authors:rk7my-cpg87", "collection": "authors", "collection_id": "rk7my-cpg87", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20170713-134454470", "type": "book_section", "title": "Submillimeter-wave antennas on thin membranes", "author": [ { "family_name": "Rebeiz", "given_name": "Gabriel M.", "clpid": "Rebeiz-G-M" }, { "family_name": "Regehr", "given_name": "Wade G.", "clpid": "Regehr-W-G" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" }, { "family_name": "Savage", "given_name": "Richard L.", "clpid": "Savage-R-L" }, { "family_name": "Luhmann", "given_name": "Neville C., Jr.", "clpid": "Luhmann-N-C-Jr" } ], "abstract": "Submillimeter-wave antennas with bismuth microbolometer detectors have been fabricated on 1-\u03bcm thick silicon-oxynitride membranes. This approach results in better patterns than previous lens-coupled integrated circuit antennas, and eliminates the dielectric loss associated with the substrate lens. Measurements on a wideband log-periodic antenna at 700 GHz, 380 GHz and 167 GHz, and on a 700 GHz log-periodic imaging array, show no sidelobee and a 3-dB beamwidth between 40\u00b0 and 50\u00b0. Also, the effective area can be increased by 5 dB by the use of a back-shorting mirror. Possible application areas are superconducting tunnel junction receivers for radio astronomy and imaging arrays for plasma diagnostics.", "doi": "10.1109/APS.1987.1149833", "publisher": "IEEE", "publication_date": "1987-06" }, { "id": "authors:85723-6zk07", "collection": "authors", "collection_id": "85723-6zk07", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20170718-170710700", "type": "book_section", "title": "Diode-grids for millimeter-wave phase-shifters and frequency doublers", "author": [ { "family_name": "Lam", "given_name": "Wayne W.", "clpid": "Lam-Wayne-W" }, { "family_name": "Chen", "given_name": "Howard", "clpid": "Chen-Howard" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" }, { "family_name": "Jou", "given_name": "Christina F.", "clpid": "Jou-C-F" }, { "family_name": "Luchmann", "given_name": "Neville C., Jr.", "clpid": "Luchmann-N-C-Jr" } ], "abstract": "Diode-grids have been fabricated on 2-cm square monolithic gallium-arsenide wafers with 1600 Schottky varactor-diodes. A computer-controlled reflectometer that uses a wave-front division interference technique was developed to measure the reflection coefficient of the diode-grids. A 70\u00b0 phase shift with a 6-dB loss was obtained at 93 GHz when the bias on the diode-grid was changed from -3V to +1V. A second harmonic conversion efficiency of 16% and an output power of 0.5 W was obtained at 66 GHz when the diode-grid was pumped with a pulsed magnetron at 33 GHz.", "doi": "10.1109/APS.1987.1149933", "publisher": "IEEE", "publication_date": "1987-06" }, { "id": "authors:n0gey-wpg21", "collection": "authors", "collection_id": "n0gey-wpg21", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20201104-083231458", "type": "book_section", "title": "Progress in quasi-optical transistor power amplifiers", "book_title": "1985 Tenth International Conference on Infrared and Millimeter Waves", "author": [ { "family_name": "Williams", "given_name": "Wyman L.", "clpid": "Williams-W-L" }, { "family_name": "Kasilingam", "given_name": "Dayalan P.", "clpid": "Kasilingam-D-P" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "abstract": "Progress in the construction of a millimeter-wave power amplifier using an array of field-effect transistors and a novel quasi-optical power combining technique is reported. Experimental results from microwave models of the circuits are presented.", "doi": "10.1109/IRMM.1985.9126564", "isbn": "978-1-5386-0872-2", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "1985-12", "pages": "50-51" }, { "id": "authors:pywp9-hxn77", "collection": "authors", "collection_id": "pywp9-hxn77", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20201104-071919080", "type": "book_section", "title": "Developments in two dimensional arrays", "book_title": "1985 Tenth International Conference on Infrared and Millimeter Waves", "author": [ { "family_name": "Compton", "given_name": "R. C.", "clpid": "Compton-R-C" }, { "family_name": "Rebeiz", "given_name": "G. M.", "clpid": "Rebeiz-G-M" }, { "family_name": "Rutledge", "given_name": "D. B.", "clpid": "Rutledge-D-B" } ], "abstract": "A two dimensional array of individual millimeter wave antennas with detectors will be described. The array is placed on a substrate lens [1] in the focal plane of a primary lens to form an imaging system (Fig. 1.). Calculations which predict ideal efficiencies of over 90% will be presented. Fabrication of the array and preliminary measurements will also be discussed.", "doi": "10.1109/IRMM.1985.9126681", "isbn": "978-1-5386-0872-2", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "1985-12", "pages": "277-278" }, { "id": "authors:rh8vw-24s80", "collection": "authors", "collection_id": "rh8vw-24s80", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20201104-072713037", "type": "book_section", "title": "Microlenses for a fly's eye imaging array", "book_title": "1985 Tenth International Conference on Infrared and Millimeter Waves", "author": [ { "family_name": "Kasilingam", "given_name": "Dayalan P.", "clpid": "Kasilingam-D-P" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "abstract": "The potential use of microlenses for imaging at millimeter-wave frequencies is investigated by analyzing the focussing properties of dielectric spheres. Our calculations show that the spheres of dielectric constant 12, with a quarter-wave matching layer, exhibit good focussing properties down to a radius of about one free-space wavelength.", "doi": "10.1109/IRMM.1985.9126637", "isbn": "978-1-5386-0872-2", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "1985-12", "pages": "193-194" }, { "id": "authors:a74xd-hne74", "collection": "authors", "collection_id": "a74xd-hne74", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20120709-094015201", "type": "book_section", "title": "Polarization-Sensitive Imaging Arrays", "author": [ { "family_name": "Tong", "given_name": "Peter P.", "clpid": "Tong-Peter-P" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" }, { "family_name": "Neikirk", "given_name": "Dean P.", "clpid": "Neikirk-D-P" }, { "family_name": "Young", "given_name": "Peter E.", "clpid": "Young-P-E" }, { "family_name": "Peebles", "given_name": "W. A.", "clpid": "Peebles-W-A" }, { "family_name": "Luhmann", "given_name": "Neville C., Jr.", "clpid": "Luhmann-N-C-Jr" } ], "abstract": "Two different monolithic imaging arrays have been developed that image polarization as well as intensity at near-millimeter wavelengths. One array is a row of linearly polarized bow-tie antennas that lean alternately left and right. This array has measured the polarization with a precision of 7 arc-minutes, and has demonstrated diffraction-limited resolution of a 20\u00b0 step change in polarization. The other array is a row of circularly polarized equiangular spiral antennas, alternately spiraling clockwise and counterclockwise, that respond to left-handed and right-handed circular polarization.", "doi": "10.1109/MWSYM.1984.1131855", "publisher": "IEEE", "publication_date": "1984-06" }, { "id": "authors:ssrd1-xsb11", "collection": "authors", "collection_id": "ssrd1-xsb11", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20201104-073756032", "type": "book_section", "title": "Simultaneous FIR interferometry/polarimetry in the UCLA Microtor plasma", "book_title": "1983 Eighth International Conference on Infrared and Millimeter Waves", "author": [ { "family_name": "Young", "given_name": "P. E.", "clpid": "Young-P-E" }, { "family_name": "Peebles", "given_name": "W. A.", "clpid": "Peebles-W-A" }, { "family_name": "Luhmann", "given_name": "N. C., Jr.", "clpid": "Luhmann-N-C-Jr" }, { "family_name": "Taylor", "given_name": "R. J.", "clpid": "Taylor-R-J" }, { "family_name": "Nelkirk", "given_name": "D. P.", "clpid": "Nelkirk-D-P" }, { "family_name": "Rutledge", "given_name": "D. B.", "clpid": "Rutledge-D-B" }, { "family_name": "Tong", "given_name": "P. P.", "clpid": "Tong-P-P" } ], "abstract": "Faraday rotation and electron line density spatial profiles ahve been measured simultaneously on the Microtor tokamak using the phase modulation scheme originally proposed by Dodel and Kunz [1]. Presently, a single channel system is spatially scanned across the complete plasma profile at 1 cm intervals. The extension of this technique to a 20 channel interferometer/polarimeter system using micro-bolometer imaging arrays is briefly described together with an assessment of the importance of such a system on fusion plasmas.", "doi": "10.1109/irmm.1983.9126372", "isbn": "9781728120386", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "1983-12", "pages": "1-2" }, { "id": "authors:4cfem-dse68", "collection": "authors", "collection_id": "4cfem-dse68", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20201104-075144586", "type": "book_section", "title": "Interferometric fir phase imaging of a tokamak plasma", "book_title": "1983 Eighth International Conference on Infrared and Millimeter Waves", "author": [ { "family_name": "Young", "given_name": "P. E.", "clpid": "Young-P-E" }, { "family_name": "Peebles", "given_name": "W. A.", "clpid": "Peebles-W-A" }, { "family_name": "Luhmann", "given_name": "N. C., Jr.", "clpid": "Luhmann-N-C-Jr" }, { "family_name": "Neikirk", "given_name": "D.", "clpid": "Neikirk-D-P" }, { "family_name": "Rutledge", "given_name": "D.", "clpid": "Rutledge-D-B" }, { "family_name": "Tong", "given_name": "P. P.", "clpid": "Tong-P-P" } ], "abstract": "Multichannel phase imaging of dielectric objects has been demonstrated in the laboratory using a microbolometer detector array and 400 GHz carcinotron radiation cource. The application of this imaging system to perform single shot measurements of electron density profiles in a tokamak plasma is described. The primary advantages are increased spatial resolution together with a much simpler optical system.", "doi": "10.1109/irmm.1983.9126401", "isbn": "9781728120386", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "1983-12", "pages": "1-2" }, { "id": "authors:7w07a-a8d06", "collection": "authors", "collection_id": "7w07a-a8d06", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20201104-082347220", "type": "book_section", "title": "Monolithic Schottky diode imaging arrays at 94 GHz", "book_title": "1983 Eighth International Conference on Infrared and Millimeter Waves", "author": [ { "family_name": "Rav-Noy", "given_name": "Zeev", "clpid": "Rav-Noy-Z" }, { "family_name": "Zah", "given_name": "Chung-en", "clpid": "Zah-Chung-en" }, { "family_name": "Shreter", "given_name": "Uri", "clpid": "Shreter-U" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" }, { "family_name": "Wang", "given_name": "Tai-Chi", "clpid": "Wang-Tai-Chi" }, { "family_name": "Schwarz", "given_name": "S. E.", "clpid": "Schwarz-S-E" }, { "family_name": "Kuech", "given_name": "Thomas F.", "clpid": "Kuech-T-F" } ], "abstract": "Monolithic GaAs Schottky diode imaging arrays have been demonstrated at 69 and 94 GHz. In the 94 GHz experiments, the diodes are fabricated by a self-aligning technique on semi-insulating GaAs and are isolated by a combination of a mesa-etch process and proton-bombardment. The series resistance is 20 \u03c9 and the estimated capacitance is 15\u201320 fF. The antennas are planar bow-ties, and power is coupled in through a quartz lens placed on the back of the GaAs substrate. The wafer is lapped to 90 \u03bcm thick to eliminate losses to substrate modes. The measured system responsivity is 330 V/W. The 69 GHz diodes are made by a non-self-aligned process, and a silicon substrate lens is used.", "doi": "10.1109/irmm.1983.9126481", "isbn": "9781728120386", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "1983-12", "pages": "1-2" }, { "id": "authors:0xdfg-bhb78", "collection": "authors", "collection_id": "0xdfg-bhb78", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20201104-080419245", "type": "book_section", "title": "Advances in microbolometers", "book_title": "1983 Eighth International Conference on Infrared and Millimeter Waves", "author": [ { "family_name": "Neikirk", "given_name": "D. P.", "clpid": "Neikirk-D-P" }, { "family_name": "Lam", "given_name": "Wayne W.", "clpid": "Lam-Wayne-W" }, { "family_name": "Rutledge", "given_name": "D. B.", "clpid": "Rutledge-D-B" } ], "abstract": "The bismuth microbolometer is a simple, easily made detector suitable for use throughout the far-infrared. A novel photoresist fabrication procedure has made it possible to obtain an electrical NEP of 2.8\u00d710\u207b\u00b9\u00b9 W (Hz)^(\u22121/2) at 100kHz for an airbridge bolometer. By using a polyimide plastic as an insulator, conventional substrate-supported devices with an NEP of 3.2\u00d710\u207b\u00b9\u00b9 W(Hz)^(\u22121/2) have also been made.", "doi": "10.1109/irmm.1983.9126431", "isbn": "9781728120386", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "1983-12", "pages": "1-3" }, { "id": "authors:m2hnw-tf994", "collection": "authors", "collection_id": "m2hnw-tf994", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20120626-130003437", "type": "book_section", "title": "Surface-Wave Losses of Coplanar Transmission Lines", "author": [ { "family_name": "Kasilingam", "given_name": "Dayalan P.", "clpid": "Kasilingam-D-P" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" } ], "abstract": "Coplanar transmission lines lose energy to surface waves when the propagation constant of the surface-wave mode exceeds that of the transmission line. This happens when the substrate thickness is an appreciable fraction of a wavelength. The losses should become important in integrated circuits at near-millimeter wavelengths because it is hard to make the substrate thickness small compared to a wavelength. In this paper we have developed a theory based on reciprocity for predicting these losses. We also utilized the quasi-static approximation method to derive expressions for propagation constants and line impedances. Experimental measurements were made for the surface-wave losses in the two strip line, the two slot line and the three wire line, and the results obtained were consistent with the theory.", "doi": "10.1109/MWSYM.1983.1130827", "publisher": "IEEE", "publication_date": "1983-06" }, { "id": "authors:623nz-jaa28", "collection": "authors", "collection_id": "623nz-jaa28", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:ALEims82", "type": "book_section", "title": "Substrate optimization for integrated circuit antennas", "author": [ { "family_name": "Alexopoulos", "given_name": "N. G.", "clpid": "Alexopoulos-N-G" }, { "family_name": "Katehi", "given_name": "P. B.", "clpid": "Katehi-P-B" }, { "family_name": "Rutledge", "given_name": "D. B.", "clpid": "Rutledge-D-B" } ], "abstract": "Imaging systems in microwaves, millimeter and submillimeter wave applications employ printed circuit antenna elements. The effect of substrate properties is analyzed in this paper by both reciprocity theorem as well as integral equation approach for infinitesimally short as well as finite length dipole and slot elements. Radiation efficiency and substrate surface wave guidance is studied for practical substrate materials as GaAs, Silicon, Quartz and Duroid.", "publisher": "IEEE", "publication_date": "1982-06-01" }, { "id": "authors:paed8-pj353", "collection": "authors", "collection_id": "paed8-pj353", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20210129-120019389", "type": "book_section", "title": "Imaging Antenna Arrays", "book_title": "1981 International Conference on Submillimeter Waves and Their Applications", "author": [ { "family_name": "Neikirk", "given_name": "Dean P.", "clpid": "Neikirk-Dean-P" }, { "family_name": "Rutledge", "given_name": "David B.", "clpid": "Rutledge-D-B" }, { "family_name": "Muha", "given_name": "Michael S.", "clpid": "Muha-Michael-S" }, { "family_name": "Park", "given_name": "Hyeon", "clpid": "Park-Hyeon" }, { "family_name": "Yu", "given_name": "Chang-Xuan", "clpid": "Yu-Chang-Xuan" } ], "abstract": "A far-infrared imaging antenna array has been demonstrated for the first time. The array is a line of evaporated silver bow-tie antennas on a fused-quartz substrate with bismuth-micro-bolometer detectors. The measured optical transfer function shows that the system is diffraction-limited. This imaging array should find direct application in fusion plasma diagnostics. If the microbolometers can be replaced by more sensitive diode detectors, the array should also find application in radiometry and radar.", "doi": "10.1109/icswa.1981.9335190", "isbn": "9781509031856", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "1981-12", "pages": "Art. No. Th-4" } ]