<h1>Reid, Jason S.</h1>
<h2>Combined from <a href="https://authors.library.caltech.edu">CaltechAUTHORS</a></h2>
<ul>
<li>Akagi, S. K. and Yokelson, R. J., el al. (2011) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20110603-150618670">Emission factors for open and domestic biomass burning for use in atmospheric models</a>; Atmospheric Chemistry and Physics; Vol. 11; No. 9; 4039-4072; <a href="https://doi.org/10.5194/acp-11-4039-2011">10.5194/acp-11-4039-2011</a></li>
<li>Reid, J. S. and Kolawa, E., el al. (1996) <a href="https://resolver.caltech.edu/CaltechAUTHORS:REIjap96">Amorphous (Mo, Ta, or W)–Si–N diffusion barriers for Al metallizations</a>; Journal of Applied Physics; Vol. 79; No. 2; 1109-1117; <a href="https://doi.org/10.1063/1.360909">10.1063/1.360909</a></li>
<li>Dauksher, W. J. and Resnick, D. J., el al. (1995) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120216-095821404">Method for fabricating a low stress x-ray mask using annealable amorphous refractory compounds</a>; Journal of Vacuum Science and Technology B; Vol. 13; No. 6; 3103-3108; <a href="https://doi.org/10.1116/1.588331">10.1116/1.588331</a></li>
<li>McLane, G. F. and Casas, L., el al. (1994) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120306-151931971">Reactive ion etching of Ta–Si–N diffusion barriers in CF_(4)+O_(2)</a>; Journal of Vacuum Science and Technology B; Vol. 12; No. 4; 2352-2355; <a href="https://doi.org/10.1116/1.587763">10.1116/1.587763</a></li>
<li>Kolawa, Elizabeth A. and Reid, J. S., el al. (1993) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20170912-111525959">Amorphous metallic alloys: a new advance in thin-film diffusion barriers for copper metallization</a>; ISBN 9780819410030; Submicrometer Metallization: Challenges, Opportunities, and Limitations; 11-17; <a href="https://doi.org/10.1117/12.145460">10.1117/12.145460</a></li>
<li>Pokela, P. J. and Reid, J. S., el al. (1991) <a href="https://resolver.caltech.edu/CaltechAUTHORS:POKjap91">Thermal oxidation of amorphous ternary Ta36Si14N50 thin films</a>; Journal of Applied Physics; Vol. 70; No. 5; 2828-2832; <a href="https://doi.org/10.1063/1.349345">10.1063/1.349345</a></li>
<li>Kolawa, E. and Chen, J. S., el al. (1991) <a href="https://resolver.caltech.edu/CaltechAUTHORS:KOLjap91">Tantalum-based diffusion barriers in Si/Cu VLSI metallizations</a>; Journal of Applied Physics; Vol. 70; No. 3; 1369-1373; <a href="https://doi.org/10.1063/1.349594">10.1063/1.349594</a></li>
</ul>