Nicolet, Marc-Aurele
- Sun, Xin (1997) I. Reactively sputtered Ti-Si-N thin films for diffusion barrier applications. II. Oxidation, diffusion and crystallization of an amorphous Zr_(60)Al_(15)Ni_(25) alloy.; 10.7907/849b-sh13
- Lie, Yu-Chun Donald (1996) Ion implantation in epitaxial GexSi1-x on Si(100); 10.7907/6GA1-F433
- Reid, Jason S. (1995) Amorphous ternary diffusion barriers for silicon metallizations; 10.7907/4TFH-VM05
- Chen, Jen-Sue (1995) Ohmic contacts to beta silicon carbide : electrical and metallurgical characterizations; 10.7907/yk40-pj23
- Liu, Wen-Shu (1994) Oxidation of GeSi and applications; 10.7907/pv5t-qy03
- Workman, Thomas Wilson (1992) Analysis of collision cascades in titanium deuteride by D-D fusion; 10.7907/fa6m-mh68
- Bai, Gang (1991) I. Heteroepitaxy on Si. II. Ion implantation in Si and heterostructures; 10.7907/v8kr-gm23
- So, Frank Cheung Tao (1988) Diffusion Barriers for VLSI Applications; 10.7907/7ytp-0932
- Kim, Sung Joon (1988) I. Ion-Solid Interactions with Markers. II. Oxidation Phenomena in Silicides and Aluminides; 10.7907/av5j-xe20
- Banwell, Thomas Clyde (1986) Investigations of Atomic Transport Induced by Heavy Ion Irradiation; 10.7907/3sgh-2m46
- Lien, Chuen-Der (1985) Thin Film Silicide Formation by Thermal Annealing: Study of Kinetics, Moving Species, Impurity Effect, and Electrical Properties; 10.7907/t5r5-5267
- Liew, Boon-Khim (1985) Study of Solid-Phase Reactions of metals on GaAs; 10.7907/pay8-6h38
- Bartur, Meir (1984) Utilization of Silicides for VLSI-Contacts with Aluminum and Thermal Oxidation; 10.7907/V36Y-BW59
- Ho, Kuo Ting (1984) Evolution of Nitrogen Impurities in Metal-Silicon Binary Couples and their Effect on Silicide Formation; 10.7907/tz19-ww79
- Scott, David Martin (1982) The Effects of Oxygen on the Formation of Ni, Pd, and Pt Silicides; 10.7907/234h-2915
- Cheung, Woontong Nathan (1980) I. Channeling studies of silicon interfaces. II. Diffusion barrier properties of titanium nitride; 10.7907/e47n-cg57
- Tsaur, Bor-Yeu (1980) Ion-beam-induced modifications of thin film structures and formation of metastable phases; 10.7907/2v82-tm86
- Harris, Joe Marion, Jr. (1976) Part I. Energy Straggling of ⁴He below 2.0 MeV in Al, Ni, Au, and Pt. Part II. Studies of the Ti-W Metallization System on Si; 10.7907/C4FY-ZX66
- Feng, Joseph Shao-Ying (1975) I. Stopping cross section additivity for O-2 MeV ^4He ions in solids. II. Magnetite thin films: fabrication and electrical properties; 10.7907/1C3P-AH34
- Bower, Robert William (1973) Reaction Kinetics of Pd and Ti-Al Films on Si; 10.7907/NY05-4E97
- Vu, Quat Thuong (1970) Space-Charge-Limited Current in Fast Neutron Irradiated Silicon; 10.7907/T93C-DG21
- Rodriguez, Valentin (1969) Measurement of the Electron Drift Velocity in Silicon; 10.7907/B8ER-9195
- Lee, Don Howard (1969) Double-Injection: High Frequency Noise and Temperature Dependence; 10.7907/964x-ab98
- Shumka, Alex (1964) Space-Charge-Limited Current in Germanium; 10.7907/EV7W-8D66