<h1>Nicolet, Marc-Aurele</h1>
<h2>Book Chapter from <a href="https://authors.library.caltech.edu">CaltechAUTHORS</a></h2>
<ul>
<li>Eisen, F. H. and Nicolet, M.-A. (2003) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20111011-081811288">Preferred Position of the Detector for MeV Backscattering Spectrometry</a>; ISBN 0-7354-0149-7; Application of accelerators in research and industry; 411-413; <a href="https://doi.org/10.1063/1.1619747">10.1063/1.1619747</a></li>
<li>Gasser, S. M. and Bachli, A., el al. (1998) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20170523-173026955">Reaction sequence of thin Ni films with (001) 3C-SiC</a>; <a href="https://doi.org/10.1109/MAM.1998.887570">10.1109/MAM.1998.887570</a></li>
<li>Vreeland, T., Jr. and Dommann, A., el al. (1988) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150123-145143727">X-Ray Diffraction Determination of Stresses in Thin Films</a>; ISBN 9781558990036; Thin films: Stresses and Mechanical Properties; 3-12; <a href="https://doi.org/10.1557/PROC-130-3">10.1557/PROC-130-3</a></li>
<li>Bai, Gang and Nicolet, Marc-A., el al. (1988) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150211-094052837">Thermal Strain Measurements in Epitaxial CoSi_2/Si by Double Crystal X-Ray Diffraction</a>; ISBN 9781558990036; Thin films: stresses and mechanical properties; 35-40; <a href="https://doi.org/10.1557/PROC-130-35">10.1557/PROC-130-35</a></li>
<li>Bai, G. and Jamieson, D. N., el al. (1987) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150304-090025874">Defects Annealing of Si^+ Implanted GaAs at RT and 100°C</a>; ISBN 9780931837609; Materials Modification and Growth Using Ion Beams; 67-72; <a href="https://doi.org/10.1557/PROC-93-67">10.1557/PROC-93-67</a></li>
<li>Bai, Gang and Jamieson, David N., el al. (1987) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150212-084707790">Misoriented Epitaxial Growth of (111)CoSi_2 on Offset (111)Si Substrates</a>; ISBN 9780931837708; Epitaxy of Semiconductor Layered Structures; 259-264; <a href="https://doi.org/10.1557/PROC-102-259">10.1557/PROC-102-259</a></li>
<li>Hamdi, A. H. and Tandon, J. L., el al. (1984) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150206-151636897">Strain and Damage Measurements in Ion Implanted Al_xGa_(1−x)As/GaAs Superlattices</a>; ISBN 9780931837029; Layered structures, epitaxy, and interfaces; 319-325; <a href="https://doi.org/10.1557/PROC-37-319">10.1557/PROC-37-319</a></li>
<li>Scherzer, B. M. U. and Børgesen, P., el al. (1976) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20180830-103505467">Determination of Stopping Cross Sections by Rutherford Backscattering</a>; ISBN 978-1-4615-8878-8; Ion Beam Surface Layer Analysis; 33-46; <a href="https://doi.org/10.1007/978-1-4615-8876-4_4">10.1007/978-1-4615-8876-4_4</a></li>
</ul>