<h1>Nicolet, Marc-Aurele</h1>
<h2>Article from <a href="https://authors.library.caltech.edu">CaltechAUTHORS</a></h2>
<ul>
<li>Nicolet, M. A. and Ryser, M., el al. (2015) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150120-090507230">Electrical resistivity change in amorphous Ta_42Si_13N_45 films by stress relaxation</a>; Applied Physics A: Materials Science and Processing; Vol. 118; No. 3; 1153-1160; <a href="https://doi.org/10.1007/s00339-014-8931-0">10.1007/s00339-014-8931-0</a></li>
<li>Romano, V. and Meier, M., el al. (2011) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20110706-112823253">Irradiation of amorphous Ta_(42)Si_(13)N_(45) film with a femtosecond laser pulse</a>; Applied Physics A: Materials Science and Processing; Vol. 104; No. 1; 357-364; <a href="https://doi.org/10.1007/s00339-010-6149-3">10.1007/s00339-010-6149-3</a></li>
<li>Nicolet, M.-A. and Giauque, P. H. (2001) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20170822-160710299">Highly metastable amorphous or near-amorphous ternary films (mictamict alloys)</a>; Microelectronic Engineering; Vol. 55; No. 1-4; 357-367; <a href="https://doi.org/10.1016/S0167-9317(00)00468-8">10.1016/S0167-9317(00)00468-8</a></li>
<li>Nicolet, Marc-A. (2000) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20170816-155358775">Reactively sputtered ternary films of the type TM–Si–N and their properties (TM=early transition metal)</a>; Vacuum; Vol. 59; No. 2-3; 716-720; <a href="https://doi.org/10.1016/S0042-207X(00)00338-9">10.1016/S0042-207X(00)00338-9</a></li>
<li>Gasser, S. M. and Kolawa, E., el al. (1999) <a href="https://resolver.caltech.edu/CaltechAUTHORS:GASjvsta99">Thermal reaction of Pt film with 110 GaN epilayer</a>; Journal of Vacuum Science and Technology A; Vol. 17; No. 5; 2642-2646; <a href="https://doi.org/10.1116/1.581924">10.1116/1.581924</a></li>
<li>Gasser, S. M. and Ruiz, R., el al. (1999) <a href="https://resolver.caltech.edu/CaltechAUTHORS:GASjes99">Instability of Amorphous Ru-Si-O Thin Films under Thermal Oxidation</a>; Journal of the Electrochemical Society; Vol. 146; No. 4; 1546-1548; <a href="https://doi.org/10.1149/1.1391802">10.1149/1.1391802</a></li>
<li>Kacsich, T. and Kolawa, E., el al. (1998) <a href="https://resolver.caltech.edu/CaltechAUTHORS:KACjpd98">Films of Ni–7 at% V, Pd, Pt and Ta–Si–N as diffusion barriers for copper on Bi2Te3</a>; Journal of Physics D: Applied Physics; Vol. 31; No. 19; 2406-2411</li>
<li>Grétillat, M.-A. and Linder, C., el al. (1998) <a href="https://resolver.caltech.edu/CaltechAUTHORS:GREjmm98">Surface-micromachined Ta–Si–N beams for use in micromechanics</a>; Journal of Micromechanics and Microengineering; Vol. 8; No. 2; 88-90</li>
<li>Grétillat, M.-A. and Linder, C., el al. (1998) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20111222-090724822">Surface-micromachined Ta-Si-N beams for use in micromechanics</a>; Journal of Micromechanics and Microengineering; Vol. 8; No. 2; 88-90; <a href="https://doi.org/10.1088/0960-1317/8/2/011">10.1088/0960-1317/8/2/011</a></li>
<li>Im, S. and Song, J. H., el al. (1997) <a href="https://resolver.caltech.edu/CaltechAUTHORS:IMSjap97">SiGeC alloy layer formation by high-dose C +  implantations into pseudomorphic metastable Ge0.08Si0.92 on Si(100)</a>; Journal of Applied Physics; Vol. 81; No. 4; 1700-1703; <a href="https://doi.org/10.1063/1.364027">10.1063/1.364027</a></li>
<li>Sun, X. and Schneider, S., el al. (1996) <a href="https://resolver.caltech.edu/CaltechAUTHORS:SUNjmr96">Oxidation and crystallization of an amorphous Zr60Al15Ni25 alloy</a>; Journal of Materials Research; Vol. 11; No. 11; 2738-2743</li>
<li>Reid, J. S. and Kolawa, E., el al. (1996) <a href="https://resolver.caltech.edu/CaltechAUTHORS:REIjap96">Amorphous (Mo, Ta, or W)–Si–N diffusion barriers for Al metallizations</a>; Journal of Applied Physics; Vol. 79; No. 2; 1109-1117; <a href="https://doi.org/10.1063/1.360909">10.1063/1.360909</a></li>
<li>Dauksher, W. J. and Resnick, D. J., el al. (1995) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120216-095821404">Method for fabricating a low stress x-ray mask using annealable amorphous refractory compounds</a>; Journal of Vacuum Science and Technology B; Vol. 13; No. 6; 3103-3108; <a href="https://doi.org/10.1116/1.588331">10.1116/1.588331</a></li>
<li>McLane, G. F. and Casas, L., el al. (1994) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120306-151931971">Reactive ion etching of Ta–Si–N diffusion barriers in CF_(4)+O_(2)</a>; Journal of Vacuum Science and Technology B; Vol. 12; No. 4; 2352-2355; <a href="https://doi.org/10.1116/1.587763">10.1116/1.587763</a></li>
<li>Lie, D. Y. C. and Vantomme, A., el al. (1993) <a href="https://resolver.caltech.edu/CaltechAUTHORS:LIEjap93">Damage and strain in epitaxial GexSi1–x films irradiated with Si</a>; Journal of Applied Physics; Vol. 74; No. 10; 6039-6045; <a href="https://doi.org/10.1063/1.355219">10.1063/1.355219</a></li>
<li>Liu, W. S. and Chen, J. S., el al. (1992) <a href="https://resolver.caltech.edu/CaltechAUTHORS:LIUjap92c">Instability of a GexSi1−xO2 film on a GexSi1−x layer</a>; Journal of Applied Physics; Vol. 72; No. 9; 4444-4446; <a href="https://doi.org/10.1063/1.352211">10.1063/1.352211</a></li>
<li>Workman, T. W. and Nicolet, M-A. (1992) <a href="https://resolver.caltech.edu/CaltechAUTHORS:WORprb92">D(d,p)T fusion induced by heavy-ion irradiation of TiD1.7</a>; Physical Review B; Vol. 46; No. 13; 8589-8592; <a href="https://doi.org/10.1103/PhysRevB.46.8589">10.1103/PhysRevB.46.8589</a></li>
<li>Bai, G. and Nicolet, M.-A. (1992) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BAIjap92b">Generation and recovery of strain in (28)Si-implanted pseudomorphic GeSi films on Si(100)</a>; Journal of Applied Physics; Vol. 71; No. 9; 4227-4229; <a href="https://doi.org/10.1063/1.350802">10.1063/1.350802</a></li>
<li>Liu, W. S. and Lee, E. W., el al. (1992) <a href="https://resolver.caltech.edu/CaltechAUTHORS:LIUjap92b">Wet oxidation of GeSi at (700)C</a>; Journal of Applied Physics; Vol. 71; No. 8; 4015-4018; <a href="https://doi.org/10.1063/1.350847">10.1063/1.350847</a></li>
<li>Liu, W. S. and Lee, E. W., el al. (1992) <a href="https://resolver.caltech.edu/CaltechAUTHORS:LIUjap92a">Importance of sample preheating in oxidation of GexSi1−x</a>; Journal of Applied Physics; Vol. 71; No. 7; 3626-3627; <a href="https://doi.org/10.1063/1.350922">10.1063/1.350922</a></li>
<li>Bai, G. and Nicolet, M.-A. (1992) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BAIjap92a">Damage production and annealing in 28Si-implanted CoSi2/Sim(111) heterostructures</a>; Journal of Applied Physics; Vol. 71; No. 2; 670-675; <a href="https://doi.org/10.1063/1.351325">10.1063/1.351325</a></li>
<li>Bai, G. and Nicolet, M.-A. (1991) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BAIjap91c">Defect production in Si(100) by 19F, 28Si, 40Ar, and 131Xe implantation at room temperature</a>; Journal of Applied Physics; Vol. 70; No. 7; 3551-3555; <a href="https://doi.org/10.1063/1.349251">10.1063/1.349251</a></li>
<li>Chen, J. S. and Kolawa, E., el al. (1991) <a href="https://resolver.caltech.edu/CaltechAUTHORS:CHEapl91">Epitaxial growth of GaAs by solid-phase transport</a>; Applied Physics Letters; Vol. 59; No. 13; 1597-1599; <a href="https://doi.org/10.1063/1.106267">10.1063/1.106267</a></li>
<li>Pokela, P. J. and Reid, J. S., el al. (1991) <a href="https://resolver.caltech.edu/CaltechAUTHORS:POKjap91">Thermal oxidation of amorphous ternary Ta36Si14N50 thin films</a>; Journal of Applied Physics; Vol. 70; No. 5; 2828-2832; <a href="https://doi.org/10.1063/1.349345">10.1063/1.349345</a></li>
<li>Kolawa, E. and Chen, J. S., el al. (1991) <a href="https://resolver.caltech.edu/CaltechAUTHORS:KOLjap91">Tantalum-based diffusion barriers in Si/Cu VLSI metallizations</a>; Journal of Applied Physics; Vol. 70; No. 3; 1369-1373; <a href="https://doi.org/10.1063/1.349594">10.1063/1.349594</a></li>
<li>Bai, G. and Nicolet, M.-A. (1991) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BAIjap91b">Defects production and annealing in self-implanted Si</a>; Journal of Applied Physics; Vol. 70; No. 2; 649-655; <a href="https://doi.org/10.1063/1.349668">10.1063/1.349668</a></li>
<li>Bai, G. and Nicolet, M.-A., el al. (1991) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BAIjap91a">Elastic and thermal properties of mesotaxial CoSi2 layers on Si</a>; Journal of Applied Physics; Vol. 69; No. 9; 6451-6455</li>
<li>Tsai, C. J. and Dommann, A., el al. (1991) <a href="https://resolver.caltech.edu/CaltechAUTHORS:TSAjap91">Self-consistent determination of the perpendicular strain profile of implanted Si by analysis of x-ray rocking curves</a>; Journal of Applied Physics; Vol. 69; No. 4; 2076-2079; <a href="https://doi.org/10.1063/1.348733">10.1063/1.348733</a></li>
<li>Morishita, K. and Molarius, J. M., el al. (1991) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141103-145239247">Arsenic loss during palladium reaction with bulk and thin film gallium arsenide</a>; Thin Solid Films; Vol. 196; No. 1; 85-93; <a href="https://doi.org/10.1016/0040-6090(91)90176-X">10.1016/0040-6090(91)90176-X</a></li>
<li>Mahan, John E. and Geib, Kent M., el al. (1991) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120509-133504606">Reflection high-energy electron diffraction patterns of CrSi_2 films on (111) silicon</a>; Journal of Vacuum Science and Technology B; Vol. 9; No. 1; 64-68; <a href="https://doi.org/10.1116/1.585791">10.1116/1.585791</a></li>
<li>Vu, Quat T. and Pokela, P. J., el al. (1990) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120509-153900631">Thermal oxidation of reactively sputtered amorphous W_(80)N_(20) films</a>; Journal of Applied Physics; Vol. 68; No. 12; 6420-6423; <a href="https://doi.org/10.1063/1.346863">10.1063/1.346863</a></li>
<li>Bai, G. and Nicolet, M-A., el al. (1990) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BAIapl90">Radiation damage in ReSi2 by a MeV 4He beam</a>; Applied Physics Letters; Vol. 57; No. 16; 1657-1659; <a href="https://doi.org/10.1063/1.104134">10.1063/1.104134</a></li>
<li>Molarius, J. M. and Morishita, K., el al. (1990) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20170830-064908540">Encapsulation of GaAs and GaAs-Pd in furnace annealing</a>; Vacuum; Vol. 41; No. 4-6; 1029-1032; <a href="https://doi.org/10.1016/0042-207X(90)93852-A">10.1016/0042-207X(90)93852-A</a></li>
<li>Bai, G. and Nicolet, M.-A., el al. (1990) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BAIprb90">Channeling of MeV ions in polyatomic epitaxial films: ReSi2 on Si(100)</a>; Physical Review B; Vol. 41; No. 13; 8603-8607; <a href="https://doi.org/10.1103/PhysRevB.41.8603">10.1103/PhysRevB.41.8603</a></li>
<li>Kolawa, E. and Molarius, J. M., el al. (1990) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120508-142551386">Amorphous Ta–Si–N thin‐film alloys as diffusion barrier in Al/Si metallizations</a>; Journal of Vacuum Science and Technology A; Vol. 8; No. 3; 3006-3010; <a href="https://doi.org/10.1116/1.576620">10.1116/1.576620</a></li>
<li>Bai, Gang and Nicolet, Marc-A., el al. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BAIapl89">Strain in epitaxial CoSi2 films on Si (111) and inference for pseudomorphic growth</a>; Applied Physics Letters; Vol. 55; No. 18; 1874-1876; <a href="https://doi.org/10.1063/1.102327">10.1063/1.102327</a></li>
<li>Ma, E. and Nicolet, M-A., el al. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MAEjap89">NiAl3 formation in Al/Ni thin-film bilayers with and without contamination</a>; Journal of Applied Physics; Vol. 65; No. 7; 2703-2710; <a href="https://doi.org/10.1063/1.342756">10.1063/1.342756</a></li>
<li>Thuillard, M. and Tran, L. T., el al. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120530-151638572">Thermal reaction of Al/Ti bilayers with contaminated interface</a>; Journal of Applied Physics; Vol. 65; No. 6; 2553-2556; <a href="https://doi.org/10.1063/1.342780">10.1063/1.342780</a></li>
<li>Tandon, J. L. and Madok, J. H., el al. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:TANapl89.965">Sequential nature of damage annealing and activation in implanted GaAs</a>; Applied Physics Letters; Vol. 54; No. 5; 448-450; <a href="https://doi.org/10.1063/1.100948">10.1063/1.100948</a></li>
<li>Ma, E. and Workman, T. W., el al. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MAEapl89">Ion mixing of metal/Al bilayers near 77 K</a>; Applied Physics Letters; Vol. 54; No. 5; 413-415; <a href="https://doi.org/10.1063/1.100937">10.1063/1.100937</a></li>
<li>Kolawa, E. and Garland, C., el al. (1988) <a href="https://resolver.caltech.edu/CaltechAUTHORS:KOLapl88">Indium oxide diffusion barriers for Al/Si metallizations</a>; Applied Physics Letters; Vol. 53; No. 26; 2644-2646; <a href="https://doi.org/10.1063/1.100541">10.1063/1.100541</a></li>
<li>Ma, W. and Meng, W. J., el al. (1988) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MAEapl88">Simultaneous planar growth of amorphous and crystalline Ni silicides</a>; Applied Physics Letters; Vol. 53; No. 21; 2033-2035; <a href="https://doi.org/10.1063/1.100494">10.1063/1.100494</a></li>
<li>So, F. C. T. and Kolawa, E., el al. (1988) <a href="https://resolver.caltech.edu/CaltechAUTHORS:SOFjap88">WxN1–x alloys as diffusion barriers between Al and Si</a>; Journal of Applied Physics; Vol. 64; No. 5; 2787-2789; <a href="https://doi.org/10.1063/1.341579">10.1063/1.341579</a></li>
<li>Zhao, X.-A. and So, F. C. T., el al. (1988) <a href="https://resolver.caltech.edu/CaltechAUTHORS:ZHAjap88">TiAl3 formation by furnace annealing of Ti/Al bilayers and the effect of impurities</a>; Journal of Applied Physics; Vol. 63; No. 8; 2600-2607; <a href="https://doi.org/10.1063/1.340981">10.1063/1.340981</a></li>
<li>Ma, E. and Kim, S.-J., el al. (1988) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MAEjap88">Ion mixing and thermochemical properties of tracers in Ag</a>; Journal of Applied Physics; Vol. 63; No. 7; 2449-2451; <a href="https://doi.org/10.1063/1.341018">10.1063/1.341018</a></li>
<li>Kim, S.-J. and Nicolet, M-A., el al. (1988) <a href="https://resolver.caltech.edu/CaltechAUTHORS:KIMprb88">Low-temperature ion-beam mixing in metals</a>; Physical Review B; Vol. 37; No. 1; 38-49; <a href="https://doi.org/10.1103/PhysRevB.37.38">10.1103/PhysRevB.37.38</a></li>
<li>Lim, B. S. and Ma, E., el al. (1988) <a href="https://resolver.caltech.edu/CaltechAUTHORS:LIMrsi88">Silicon resistor to measure temperature during rapid thermal annealing</a>; Review of Scientific Instruments; Vol. 59; No. 1; 182-183; <a href="https://doi.org/10.1063/1.1140004">10.1063/1.1140004</a></li>
<li>So, F. C. T. and Kolawa, E., el al. (1987) <a href="https://resolver.caltech.edu/CaltechAUTHORS:SOFjvstb87">Summary Abstract: Reactively sputtered RuO2 and Mo–O diffusion barriers</a>; Journal of Vacuum Science and Technology B; Vol. 5; No. 6; 1748-1749; <a href="https://doi.org/10.1116/1.583631">10.1116/1.583631</a></li>
<li>Zhao, X.-A. and Yang, H.-Y., el al. (1987) <a href="https://resolver.caltech.edu/CaltechAUTHORS:ZHAjap87">Kinetics of NiAl3 growth induced by steady-state thermal annealing at the Ni-&lt;Al&gt; interface</a>; Journal of Applied Physics; Vol. 62; No. 5; 1821-1825; <a href="https://doi.org/10.1063/1.339563">10.1063/1.339563</a></li>
<li>Lim, B. S. and Ma, E., el al. (1987) <a href="https://resolver.caltech.edu/CaltechAUTHORS:LIMjap87">Kinetics and moving species during Co2Si formation by rapid thermal annealing</a>; Journal of Applied Physics; Vol. 61; No. 11; 5027-5030; <a href="https://doi.org/10.1063/1.338324">10.1063/1.338324</a></li>
<li>Workman, T. W. and Cheng, Y. T., el al. (1987) <a href="https://resolver.caltech.edu/CaltechAUTHORS:WORapl87">Effect of thermodynamics on ion mixing</a>; Applied Physics Letters; Vol. 50; No. 21; 1485-1487; <a href="https://doi.org/10.1063/1.98253">10.1063/1.98253</a></li>
<li>Cheng, Y.-T. and Nicolet, M.-A., el al. (1987) <a href="https://resolver.caltech.edu/CaltechAUTHORS:CHEprl87">From cascade to spike — a fractal-geometry approach</a>; Physical Review Letters; Vol. 58; No. 20; 2083-2086; <a href="https://doi.org/10.1103/PhysRevLett.58.2083">10.1103/PhysRevLett.58.2083</a></li>
<li>Kao, Y. C. and Wang, K. L., el al. (1987) <a href="https://resolver.caltech.edu/CaltechAUTHORS:KAOjvstb87">Study of CoSi2/Si strained layers grown by molecular beam epitaxy</a>; Journal of Vacuum Science and Technology B; Vol. 5; No. 3; 745-748; <a href="https://doi.org/10.1116/1.583781">10.1116/1.583781</a></li>
<li>Kolawa, E. and So, F. C. T., el al. (1987) <a href="https://resolver.caltech.edu/CaltechAUTHORS:KOLapl87">Reactively sputtered RuO2 diffusion barriers</a>; Applied Physics Letters; Vol. 50; No. 13; 854-855; <a href="https://doi.org/10.1063/1.98012">10.1063/1.98012</a></li>
<li>Banwell, T. and Nicolet, M-A., el al. (1987) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120622-075340401">Chemical effects in ion mixing of a ternary system (metal-SiO_2)</a>; Applied Physics Letters; Vol. 50; No. 10; 571-573; <a href="https://doi.org/10.1063/1.98138">10.1063/1.98138</a></li>
<li>Banwell, Thomas and Nicolet, M.-A. (1987) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20170816-144413444">Distinguishing anisotropic from isotropic transport in ion mixing of metal/oxide bilayers</a>; Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms; Vol. 19-20; 704-707; <a href="https://doi.org/10.1016/S0168-583X(87)80141-6">10.1016/S0168-583X(87)80141-6</a></li>
<li>Zhao, X.-A. and Kolawa, E., el al. (1986) <a href="https://resolver.caltech.edu/CaltechAUTHORS:ZHAjvsta86">Reaction of thin metal films with crystalline and amorphous Al2O3</a>; Journal of Vacuum Science and Technology A; Vol. 4; No. 6; 3139-3141; <a href="https://doi.org/10.1116/1.573642">10.1116/1.573642</a></li>
<li>So, F. C. T. and Kolawa, E., el al. (1986) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120626-155811980">Thermal stability and nitrogen redistribution in the〈Si〉/Ti/W–N/Al metallization scheme</a>; Journal of Vacuum Science and Technology A; Vol. 4; No. 6; 3078-3081; <a href="https://doi.org/10.1116/1.573631">10.1116/1.573631</a></li>
<li>So, F. C. T. and Kolawa, E., el al. (1986) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120627-125934625">Thermal stability and nitrogen redistribution in the &lt;Si&gt;/Ti/W-N/ AI metallization scheme</a>; Journal of Vacuum Science and Technology A; Vol. 4; No. 6; 3078-3081; <a href="https://doi.org/10.1116/1.573631">10.1116/1.573631</a></li>
<li>Cheng, Y.-T. and Zhao, X.-A., el al. (1986) <a href="https://resolver.caltech.edu/CaltechAUTHORS:CHEjap86">Correlation between the cohesive energy and the onset of radiation-enhanced diffusion in ion mixing</a>; Journal of Applied Physics; Vol. 60; No. 7; 2615-2617; <a href="https://doi.org/10.1063/1.337131">10.1063/1.337131</a></li>
<li>Kattelus, H. P. and Tandon, J. L., el al. (1986) <a href="https://resolver.caltech.edu/CaltechAUTHORS:KATjvsta86">Bias-induced stress transitions in sputtered TiN films</a>; Journal of Vacuum Science and Technology A; Vol. 4; No. 4; 1850-1854; <a href="https://doi.org/10.1116/1.573776">10.1116/1.573776</a></li>
<li>Banwell, Thomas and Nicolet, M.-A., el al. (1986) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120626-145123709">Effect of dose rate on ion beam mixing in Nb-Si</a>; Applied Physics Letters; Vol. 48; No. 22; 1519-1521; <a href="https://doi.org/10.1063/1.96854">10.1063/1.96854</a></li>
<li>Banwell, T. C. and Zhao, X.-A., el al. (1986) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120626-152109958">Effects of ion irradiation on conductivity of CrSi_2 thin films</a>; Journal of Applied Physics; Vol. 59; No. 9; 3077-3080; <a href="https://doi.org/10.1063/1.336931">10.1063/1.336931</a></li>
<li>Kattelus, H. P. and Kolawa, E., el al. (1985) <a href="https://resolver.caltech.edu/CaltechAUTHORS:KATjvsta85">Sputtered W–N diffusion barriers</a>; Journal of Vacuum Science and Technology A; Vol. 3; No. 6; 2246-2254; <a href="https://doi.org/10.1116/1.572901">10.1116/1.572901</a></li>
<li>So, F. C. T. and Lien, C.-D., el al. (1985) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120628-154831998">Formation and electrical properties of Hf Si_2 grown thermally from evaporated Hf and Si films</a>; Journal of Vacuum Science and Technology A; Vol. 3; No. 6; 2284-2288; <a href="https://doi.org/10.1116/1.572909">10.1116/1.572909</a></li>
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