@article{https://resolver.caltech.edu/CaltechAUTHORS:20150120-090507230,
    title = "Electrical resistivity change in amorphous Ta\_42Si\_13N\_45 films by stress relaxation",
    journal = "Applied Physics A: Materials Science and Processing",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20150120-090507230",
    id = "record",
    issn = "0947-8396",
    doi = "10.1007/s00339-014-8931-0",
    volume = "118"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20110706-112823253,
    title = "Irradiation of amorphous Ta\_(42)Si\_(13)N\_(45) film with a femtosecond laser pulse",
    journal = "Applied Physics A: Materials Science and Processing",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20110706-112823253",
    id = "record",
    issn = "0947-8396",
    doi = "10.1007/s00339-010-6149-3",
    volume = "104"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20170822-160710299,
    title = "Highly metastable amorphous or near-amorphous ternary films (mictamict alloys)",
    journal = "Microelectronic Engineering",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20170822-160710299",
    id = "record",
    issn = "0167-9317",
    doi = "10.1016/S0167-9317(00)00468-8",
    volume = "55"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20170816-155358775,
    title = "Reactively sputtered ternary films of the type TM–Si–N and their properties (TM=early transition metal)",
    journal = "Vacuum",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20170816-155358775",
    id = "record",
    issn = "0042-207X",
    doi = "10.1016/S0042-207X(00)00338-9",
    volume = "59"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:GASjvsta99,
    title = "Thermal reaction of Pt film with 110 GaN epilayer",
    journal = "Journal of Vacuum Science and Technology A",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:GASjvsta99",
    id = "record",
    issn = "0734-2101",
    doi = "10.1116/1.581924",
    volume = "17"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:GASjes99,
    title = "Instability of Amorphous Ru-Si-O Thin Films under Thermal Oxidation",
    journal = "Journal of the Electrochemical Society",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:GASjes99",
    id = "record",
    issn = "0013-4651",
    doi = "10.1149/1.1391802",
    volume = "146"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:KACjpd98,
    title = "Films of Ni–7 at\% V, Pd, Pt and Ta–Si–N as diffusion barriers for copper on Bi2Te3",
    journal = "Journal of Physics D: Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:KACjpd98",
    id = "record",
    issn = "0022-3727",
    volume = "31"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:GREjmm98,
    title = "Surface-micromachined Ta–Si–N beams for use in micromechanics",
    journal = "Journal of Micromechanics and Microengineering",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:GREjmm98",
    id = "record",
    issn = "0960-1317",
    volume = "8"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20111222-090724822,
    title = "Surface-micromachined Ta-Si-N beams for use in micromechanics",
    journal = "Journal of Micromechanics and Microengineering",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20111222-090724822",
    id = "record",
    issn = "0960-1317",
    doi = "10.1088/0960-1317/8/2/011",
    volume = "8"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:IMSjap97,
    title = "SiGeC alloy layer formation by high-dose C +  implantations into pseudomorphic metastable Ge0.08Si0.92 on Si(100)",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:IMSjap97",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.364027",
    volume = "81"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:SUNjmr96,
    title = "Oxidation and crystallization of an amorphous Zr60Al15Ni25 alloy",
    journal = "Journal of Materials Research",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:SUNjmr96",
    id = "record",
    issn = "0884-2914",
    volume = "11"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:REIjap96,
    title = "Amorphous (Mo, Ta, or W)–Si–N diffusion barriers for Al metallizations",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:REIjap96",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.360909",
    volume = "79"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120216-095821404,
    title = "Method for fabricating a low stress x-ray mask using annealable amorphous refractory compounds",
    journal = "Journal of Vacuum Science and Technology B",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120216-095821404",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.588331",
    volume = "13"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120306-151931971,
    title = "Reactive ion etching of Ta–Si–N diffusion barriers in CF\_(4)+O\_(2)",
    journal = "Journal of Vacuum Science and Technology B",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120306-151931971",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.587763",
    volume = "12"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:LIEjap93,
    title = "Damage and strain in epitaxial GexSi1–x films irradiated with Si",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:LIEjap93",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.355219",
    volume = "74"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:LIUjap92c,
    title = "Instability of a GexSi1−xO2 film on a GexSi1−x layer",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:LIUjap92c",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.352211",
    volume = "72"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:WORprb92,
    title = "D(d,p)T fusion induced by heavy-ion irradiation of TiD1.7",
    journal = "Physical Review B",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:WORprb92",
    id = "record",
    issn = "0163-1829",
    doi = "10.1103/PhysRevB.46.8589",
    volume = "46"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BAIjap92b,
    title = "Generation and recovery of strain in (28)Si-implanted pseudomorphic GeSi films on Si(100)",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BAIjap92b",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.350802",
    volume = "71"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:LIUjap92b,
    title = "Wet oxidation of GeSi at (700)C",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:LIUjap92b",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.350847",
    volume = "71"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:LIUjap92a,
    title = "Importance of sample preheating in oxidation of GexSi1−x",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:LIUjap92a",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.350922",
    volume = "71"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BAIjap92a,
    title = "Damage production and annealing in 28Si-implanted CoSi2/Sim(111) heterostructures",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BAIjap92a",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.351325",
    volume = "71"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BAIjap91c,
    title = "Defect production in Si(100) by 19F, 28Si, 40Ar, and 131Xe implantation at room temperature",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BAIjap91c",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.349251",
    volume = "70"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:CHEapl91,
    title = "Epitaxial growth of GaAs by solid-phase transport",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:CHEapl91",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.106267",
    volume = "59"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:POKjap91,
    title = "Thermal oxidation of amorphous ternary Ta36Si14N50 thin films",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:POKjap91",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.349345",
    volume = "70"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:KOLjap91,
    title = "Tantalum-based diffusion barriers in Si/Cu VLSI metallizations",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:KOLjap91",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.349594",
    volume = "70"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BAIjap91b,
    title = "Defects production and annealing in self-implanted Si",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BAIjap91b",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.349668",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BAIjap91a,
    title = "Elastic and thermal properties of mesotaxial CoSi2 layers on Si",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BAIjap91a",
    id = "record",
    issn = "0021-8979",
    volume = "69"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:TSAjap91,
    title = "Self-consistent determination of the perpendicular strain profile of implanted Si by analysis of x-ray rocking curves",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:TSAjap91",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.348733",
    volume = "69"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20141103-145239247,
    title = "Arsenic loss during palladium reaction with bulk and thin film gallium arsenide",
    journal = "Thin Solid Films",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20141103-145239247",
    id = "record",
    issn = "0040-6090",
    doi = "10.1016/0040-6090(91)90176-X",
    volume = "196"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120509-133504606,
    title = "Reflection high-energy electron diffraction patterns of CrSi\_2 films on (111) silicon",
    journal = "Journal of Vacuum Science and Technology B",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120509-133504606",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.585791",
    volume = "9"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120509-153900631,
    title = "Thermal oxidation of reactively sputtered amorphous W\_(80)N\_(20) films",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120509-153900631",
    id = "record",
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    doi = "10.1063/1.346863",
    volume = "68"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BAIapl90,
    title = "Radiation damage in ReSi2 by a MeV 4He beam",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BAIapl90",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.104134",
    volume = "57"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20170830-064908540,
    title = "Encapsulation of GaAs and GaAs-Pd in furnace annealing",
    journal = "Vacuum",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20170830-064908540",
    id = "record",
    issn = "0042-207X",
    doi = "10.1016/0042-207X(90)93852-A",
    volume = "41"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BAIprb90,
    title = "Channeling of MeV ions in polyatomic epitaxial films: ReSi2 on Si(100)",
    journal = "Physical Review B",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BAIprb90",
    id = "record",
    issn = "0163-1829",
    doi = "10.1103/PhysRevB.41.8603",
    volume = "41"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120508-142551386,
    title = "Amorphous Ta–Si–N thin‐film alloys as diffusion barrier in Al/Si metallizations",
    journal = "Journal of Vacuum Science and Technology A",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120508-142551386",
    id = "record",
    issn = "0734-2101",
    doi = "10.1116/1.576620",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BAIapl89,
    title = "Strain in epitaxial CoSi2 films on Si (111) and inference for pseudomorphic growth",
    journal = "Applied Physics Letters",
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    doi = "10.1063/1.102327",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:MAEjap89,
    title = "NiAl3 formation in Al/Ni thin-film bilayers with and without contamination",
    journal = "Journal of Applied Physics",
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    id = "record",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120530-151638572,
    title = "Thermal reaction of Al/Ti bilayers with contaminated interface",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120530-151638572",
    id = "record",
    issn = "0021-8979",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:TANapl89.965,
    title = "Sequential nature of damage annealing and activation in implanted GaAs",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:TANapl89.965",
    id = "record",
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    doi = "10.1063/1.100948",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:MAEapl89,
    title = "Ion mixing of metal/Al bilayers near 77 K",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:MAEapl89",
    id = "record",
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    doi = "10.1063/1.100937",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:KOLapl88,
    title = "Indium oxide diffusion barriers for Al/Si metallizations",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:KOLapl88",
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    issn = "0003-6951",
    doi = "10.1063/1.100541",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:MAEapl88,
    title = "Simultaneous planar growth of amorphous and crystalline Ni silicides",
    journal = "Applied Physics Letters",
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    doi = "10.1063/1.100494",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:SOFjap88,
    title = "WxN1–x alloys as diffusion barriers between Al and Si",
    journal = "Journal of Applied Physics",
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    id = "record",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:ZHAjap88,
    title = "TiAl3 formation by furnace annealing of Ti/Al bilayers and the effect of impurities",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:MAEjap88,
    title = "Ion mixing and thermochemical properties of tracers in Ag",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:KIMprb88,
    title = "Low-temperature ion-beam mixing in metals",
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    issn = "0163-1829",
    doi = "10.1103/PhysRevB.37.38",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:LIMrsi88,
    title = "Silicon resistor to measure temperature during rapid thermal annealing",
    journal = "Review of Scientific Instruments",
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    issn = "0034-6748",
    doi = "10.1063/1.1140004",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:SOFjvstb87,
    title = "Summary Abstract: Reactively sputtered RuO2 and Mo–O diffusion barriers",
    journal = "Journal of Vacuum Science and Technology B",
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    id = "record",
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    doi = "10.1116/1.583631",
    volume = "5"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:ZHAjap87,
    title = "Kinetics of NiAl3 growth induced by steady-state thermal annealing at the Ni-<Al> interface",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:LIMjap87,
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    issn = "0021-8979",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:WORapl87,
    title = "Effect of thermodynamics on ion mixing",
    journal = "Applied Physics Letters",
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    issn = "0003-6951",
    doi = "10.1063/1.98253",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:CHEprl87,
    title = "From cascade to spike — a fractal-geometry approach",
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    id = "record",
    issn = "0031-9007",
    doi = "10.1103/PhysRevLett.58.2083",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:KAOjvstb87,
    title = "Study of CoSi2/Si strained layers grown by molecular beam epitaxy",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:KOLapl87,
    title = "Reactively sputtered RuO2 diffusion barriers",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120622-075340401,
    title = "Chemical effects in ion mixing of a ternary system (metal-SiO\_2)",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20170816-144413444,
    title = "Distinguishing anisotropic from isotropic transport in ion mixing of metal/oxide bilayers",
    journal = "Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms",
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    id = "record",
    issn = "0168-583X",
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    volume = "19-20"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120626-155811980,
    title = "Thermal stability and nitrogen redistribution in the〈Si〉/Ti/W–N/Al metallization scheme",
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    id = "record",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120627-125934625,
    title = "Thermal stability and nitrogen redistribution in the <Si>/Ti/W-N/ AI metallization scheme",
    journal = "Journal of Vacuum Science and Technology A",
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    title = "Effect of dose rate on ion beam mixing in Nb-Si",
    journal = "Applied Physics Letters",
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    doi = "10.1063/1.96854",
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    title = "Effects of ion irradiation on conductivity of CrSi\_2 thin films",
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    title = "Formation and electrical properties of Hf Si\_2 grown thermally from evaporated Hf and Si films",
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    title = "Dominant moving species in the formation of amorphous NiZr by solid-state reaction",
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    title = "Transition-metal silicides formed by ion mixing and by thermal annealing: Which species moves?",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:SPEjap85,
    title = "Interfacial strain in AlxGa1–xAs layers on GaAs",
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    doi = "10.1103/PhysRevB.31.2343",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:HOKjap85a,
    title = "Palladium silicide formation under the influence of nitrogen and oxygen impurities",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:KIMapl85,
    title = "Low-temperature ion beam mixing of Pt and Si markers in Ge",
    journal = "Applied Physics Letters",
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    doi = "10.1063/1.95719",
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    title = "Transition-metal silicides lattice-matched to silicon",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120628-081537763,
    title = "A structure marker study for Pd\_2Si formation: Pd moves in epitaxial Pd\_2Si",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:HOKjap85b,
    title = "An inert marker study for palladium silicide formation: Si moves in polycrystalline Pd2Si",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:ZHUjap84,
    title = "Reaction of amorphous Ni-W and Ni-N-W films with substrate silicon",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20170726-143803541,
    title = "An improved forward I-V method for nonideal Schottky diodes with high series resistance",
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    title = "Impurity effects in transition metal silicides",
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    title = "Magnetic properties of amorphous thin films produced by ion mixing",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:HOKjap84,
    title = "Substrate orientation dependence of enhanced epitaxial regrowth of silicon",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:SPEapl84,
    title = "Depth profiles of perpendicular and parallel strain in a GaAsxP1−x/GaP superlattice",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:SUNjap84,
    title = "Influence of F and Cl on the recrystallization of ion-implanted amorphous Si",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:CHEapl84,
    title = "Influence of chemical driving forces in ion mixing of metallic bilayers",
    journal = "Applied Physics Letters",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120702-094830929,
    title = "Mathematical model for a radioactive marker in silicide formation",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:ROSprb84,
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@article{https://resolver.caltech.edu/CaltechAUTHORS:KUNjap84,
    title = "Electrical characteristics of amorphous molybdenum-nickel contacts to silicon",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120702-115714409,
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20170726-174538830,
    title = "Utilization of NiSi\_2 as an interconnect material for VLSI",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BARapl84a,
    title = "Self-confined metallic interconnects for very large scale integration",
    journal = "Applied Physics Letters",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BARapl84c,
    title = "Ion mixing of markers in SiO2 and Si",
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    title = "Platinum diffusion into silicon from PtSi",
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    title = "Alteration of Ni silicide formation by N implantation",
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    title = "Diagnostic test for ion implantation dosimetry",
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    title = "Influence of the absorption coefficient in Nd laser annealing of amorphized semiconductor layers",
    journal = "Applied Physics Letters",
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    title = "Heteroepitaxy of deposited amorphous layer by pulsed electron-beam irradiation",
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    title = "Epitaxial growth of deposited amorphous layer by laser annealing",
    journal = "Applied Physics Letters",
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    title = "Growth mechanism for solid-phase epitaxy of Si in the Si <100>/Pd2Si/Si(amorphous) system studied by a radioactive tracer technique",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120802-111429967,
    title = "Investigation of the Au-Ge-Ni and Au-Ge-Pt system used
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    journal = "Journal of Vacuum Science and Technology",
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@article{https://resolver.caltech.edu/CaltechAUTHORS:20120808-085747179,
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@article{https://resolver.caltech.edu/CaltechAUTHORS:LAUapl76,
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