Advisor: Nicolet, Marc-Aurele, Thesis and Dissertations from CaltechTHESIS

• Sun, Xin 1997 (PHD) I. Reactively sputtered Ti-Si-N thin films for diffusion barrier applications. II. Oxidation, diffusion and crystallization of an amorphous Zr_(60)Al_(15)Ni_(25) alloy. 10.7907/849b-sh13
• Lie, Yu-Chun Donald 1996 (PHD) Ion implantation in epitaxial GexSi1-x on Si(100) 10.7907/6GA1-F433
• Reid, Jason S. 1995 (PHD) Amorphous ternary diffusion barriers for silicon metallizations 10.7907/4TFH-VM05
• Chen, Jen-Sue 1995 (PHD) Ohmic contacts to beta silicon carbide : electrical and metallurgical characterizations 10.7907/yk40-pj23
• Liu, Wen-Shu 1994 (PHD) Oxidation of GeSi and applications 10.7907/pv5t-qy03
• Workman, Thomas Wilson 1992 (PHD) Analysis of collision cascades in titanium deuteride by D-D fusion 10.7907/fa6m-mh68
• Bai, Gang 1991 (PHD) I. Heteroepitaxy on Si. II. Ion implantation in Si and heterostructures 10.7907/v8kr-gm23
• So, Frank Cheung Tao 1988 (PHD) Diffusion Barriers for VLSI Applications 10.7907/7ytp-0932
• Kim, Sung Joon 1988 (PHD) I. Ion-Solid Interactions with Markers. II. Oxidation Phenomena in Silicides and Aluminides 10.7907/av5j-xe20
• Banwell, Thomas Clyde 1986 (PHD) Investigations of Atomic Transport Induced by Heavy Ion Irradiation 10.7907/3sgh-2m46
• Liew, Boon-Khim 1985 (BS) Study of Solid-Phase Reactions of metals on GaAs 10.7907/pay8-6h38
• Lien, Chuen-Der 1985 (PHD) Thin Film Silicide Formation by Thermal Annealing: Study of Kinetics, Moving Species, Impurity Effect, and Electrical Properties 10.7907/t5r5-5267
• Ho, Kuo Ting 1984 (PHD) Evolution of Nitrogen Impurities in Metal-Silicon Binary Couples and their Effect on Silicide Formation 10.7907/tz19-ww79
• Bartur, Meir 1984 (PHD) Utilization of Silicides for VLSI-Contacts with Aluminum and Thermal Oxidation 10.7907/V36Y-BW59
• Scott, David Martin 1982 (PHD) The Effects of Oxygen on the Formation of Ni, Pd, and Pt Silicides 10.7907/234h-2915
• Cheung, Woontong Nathan 1980 (PHD) I. Channeling studies of silicon interfaces. II. Diffusion barrier properties of titanium nitride 10.7907/e47n-cg57
• Tsaur, Bor-Yeu 1980 (PHD) Ion-beam-induced modifications of thin film structures and formation of metastable phases 10.7907/2v82-tm86
• Harris, Joe Marion 1976 (PHD) Part I. Energy Straggling of ⁴He below 2.0 MeV in Al, Ni, Au, and Pt. Part II. Studies of the Ti-W Metallization System on Si 10.7907/C4FY-ZX66
• Lee, Tsu-wei Frank 1975 (PHD) Deep Levels and High Concentrations of Impurities in Silicon 10.7907/j2rb-3s97
• Feng, Joseph Shao-Ying 1975 (PHD) I. Stopping cross section additivity for O-2 MeV ^4He ions in solids. II. Magnetite thin films: fabrication and electrical properties 10.7907/1C3P-AH34
• Bower, Robert William 1973 (PHD) Reaction Kinetics of Pd and Ti-Al Films on Si 10.7907/NY05-4E97
• Taynai, Joseph Dean 1970 (PHD) Properties of α-monoclinic selenium 10.7907/2T9A-6F21
• Vu, Quat Thuong 1970 (PHD) Space-charge-limited current in fast neutron irradiated silicon 10.7907/T93C-DG21
• Lee, Don Howard 1969 (PHD) Double injection: high frequency noise and temperature dependence 10.7907/964x-ab98
• Rodriguez, Valentin 1969 (PHD) Measurement of the electron drift velocity in silicon 10.7907/B8ER-9195
• Shumka, Alex 1964 (PHD) Space-charge-limited current in germanium 10.7907/EV7W-8D66