[ { "id": "https://authors.library.caltech.edu/records/1vreh-raq44", "eprint_id": 98804, "eprint_status": "archive", "datestamp": "2023-08-19 02:55:09", "lastmod": "2024-01-14 21:57:42", "type": "monograph", "metadata_visibility": "show", "creators": { "items": [ { "id": "Middlebrook-R-D", "name": { "family": "Middlebrook", "given": "R. D." } } ] }, "title": "A New Junction Transistor High-Frequency Equivalent Circuit", "ispublished": "unpub", "full_text_status": "public", "note": "This work was performed in part at Stanford University under Office of Naval Research Contract N6onr 251(07) (NR 373 360). The author wishes to thank Dr. J. M. Pettit, Dr. G. S. Bahrs, Dr. R. M. Scarlett, and K. G. Sorenson, all of Stanford University, for valuable assistance and discussion. The work was completed at the California Institute of Technology under Air Force Office of Scientific Research Contract AF 18(600)-1113. The numerical values in Table I were obtained by R. L. Walker at the Stanford Electronics Laboratories, and are part of a larger series of measurements used by him to verify a rather more accurate expression for the cutoff frequency of the common-base practical transistor than that given in (111). Figures 7 through 10 are reproduced by kind permission of John Wiley and Sons, Inc.\n\n
Submitted - TR000390.pdf
", "abstract": "A small-signal equivalent circuit for a junction transistor is presented which is applicable to alloy or grown types of p-n-p or n-p-n transistors, and which is valid from d-c up to twice the cutoff frequency. The equivalent circuit is in the form of four short-circuit admittances, each of which can be represented by a simple network of lumped elements constant with frequency. The derivation is based on physical principles and takes into account base widening and collector barrier capacitance. Equations for the equivalent circuit element values are given either in terms of physical parameters or in terms of six practical measurements. The four-admittance representation is given both for common-emitter and common-base connections, and a relation between the common- emitter and the common-base cutoff frequencies is derived and experimentally verified. Measurements of the real and imaginary parts of the four admittances as functions of frequency for several transistors show excellent agreement with the values predicted by the equivalent circuit.", "date": "2019-09-23", "date_type": "published", "publisher": "California Institute of Technology", "id_number": "CaltechAUTHORS:20190923-144144455", "official_url": "https://resolver.caltech.edu/CaltechAUTHORS:20190923-144144455", "rights": "No commercial reproduction, distribution, display or performance rights in this work are provided.", "funders": { "items": [ { "agency": "Air Force Office of Scientific Research (AFOSR)", "grant_number": "AF 18(600)-1113" }, { "agency": "Office of Naval Research (ONR)", "grant_number": "NR 373 360" } ] }, "other_numbering_system": { "items": [ { "id": "AD 120 469", "name": "ASTIA" } ] }, "local_group": { "items": [ { "id": "Caltech-Antenna-Laboratory" } ] }, "doi": "10.7907/8BEY-FW43", "primary_object": { "basename": "TR000390.pdf", "url": "https://authors.library.caltech.edu/records/1vreh-raq44/files/TR000390.pdf" }, "resource_type": "monograph", "pub_year": "2019", "author_list": "Middlebrook, R. D." }, { "id": "https://authors.library.caltech.edu/records/ztss4-6r716", "eprint_id": 35371, "eprint_status": "archive", "datestamp": "2023-08-19 03:14:48", "lastmod": "2023-10-20 16:09:17", "type": "monograph", "metadata_visibility": "show", "creators": { "items": [ { "id": "Middlebrook-R-D", "name": { "family": "Middlebrook", "given": "R. D." } }, { "id": "Mead-C-A", "name": { "family": "Mead", "given": "C. A." } } ] }, "title": "Optimum Noise Performance of Transistor Input Circuits / Transistor AC and DC Amplifiers with High Input Impedance", "ispublished": "unpub", "full_text_status": "public", "note": "Optimum Noise Performance of Transistor Input Circuits Presented at the Philadelphia Transistor\nand Solid State Circuits Conference,\nFebruary 1958.\nPublished in Semiconductbr Products,\nJuly/August, 1958.\n\nTransistor AC and DC Amplifiers with High Input Impedance Published in Semiconductor Products,\nMarch 1959.\n\nPart of this material is based on work performed for Westrex Corporation,\nHollywood, California, and is reported by permission of Westrex\nCorporation. The author also wishes to thank A. G. D1 Loreto and T. C.\nSorensen, of the California Institute of Technology, who performed the\nexperimental measurements, and the Alectra Division of Consolidated Electrodynamics\nCorporation, Pasadena, California, for their kind loan of a true\nrms voltmeter.\n\nThe authors wish to thank A. G. DiLoreto, T. C. Sorensen, and W. T.\nMcDonald, of the California Institute of Technology, for their help with\nthe experimental measurements. Patents covering many of the circuits\nhave been applied for by the California Institute of Technology.\n\nSubmitted - Optimum_Noise_Performance,_Transistor_AC_and_DC_Amplifiers_-_R.D._Middlebrook.pdf
", "abstract": "Some results are presented for optimum noise performance of transistor input stages when fed from resistive or reactive sources. Standard theory has shown that a common-emitter transistor fed from a resistive source presents a minimum noise figure F_m when the source resistance has a certain value R_gm in the order of lk\u03a9. In this\npaper, expressions are developed for minimum noise figure and optimum\nsource resistance in the presence of base bias resistors, emitter degeneration\nresistance, and various kinds of feedback. Results are in\nterms of F_m and R_gm only, and do not contain other functions of the\ntransistor internal noise sources. It is shown that the minimum noise\nfigure is never less than F_m, but the optimum source resistance can be\neither greater or less than R_gm.\n\nIn the case of reactive sources, noise figure is meaningless and\nthe quantity of interest is signal-to-noise ratio over the passband.\nIt is shown that for an inductive source, such as a magnetic tape head,\nthere is a maximum signal-to-noise ratio obtainable with an optimum\nsource inductance, and that a Figure of Merit can be assigned to the\nsource which is independent of its inductance.\n\nExperimental results presented for both resistive and inductive\nsources show good agreement with the theoretical predictions.", "date": "2012-11-09", "date_type": "published", "publisher": "California Institute of Technology", "id_number": "CaltechAUTHORS:20121108-143232418", "official_url": "https://resolver.caltech.edu/CaltechAUTHORS:20121108-143232418", "rights": "No commercial reproduction, distribution, display or performance rights in this work are provided.", "primary_object": { "basename": "Optimum_Noise_Performance,_Transistor_AC_and_DC_Amplifiers_-_R.D._Middlebrook.pdf", "url": "https://authors.library.caltech.edu/records/ztss4-6r716/files/Optimum_Noise_Performance,_Transistor_AC_and_DC_Amplifiers_-_R.D._Middlebrook.pdf" }, "resource_type": "monograph", "pub_year": "2012", "author_list": "Middlebrook, R. D. and Mead, C. A." }, { "id": "https://authors.library.caltech.edu/records/9gbdr-9m441", "eprint_id": 35370, "eprint_status": "archive", "datestamp": "2023-08-19 04:17:11", "lastmod": "2023-10-20 16:09:14", "type": "monograph", "metadata_visibility": "show", "creators": { "items": [ { "id": "Middlebrook-R-D", "name": { "family": "Middlebrook", "given": "R. D." } } ] }, "title": "I Conditions at a reverse-biased p-n junction in the presence of collected current II Effects of modified collector boundary conditions on the basic properties of a transistor", "ispublished": "unpub", "full_text_status": "public", "note": "Valuable discussions with and suggestions by J. J . Sparkes and\nM-A. Nicolet are gratefully acknowledged . The work was supported in\npart by funds made available by the Jet Propulsion Laboratory of the\nCalifornia Institute of Technology from NASA Contract No. NAS 7-100.\n\nSubmitted - Conditions_at_a_Reverse-Biased_p-n_Junction....pdf
", "abstract": "An abrupt p-n junction, such as occurs at the collector junction\nof an n-p-n transistor, is considered. The ratio of n- to p-region\nconductivity is taken to be very high, so that the transition region is\nrestricted almost entirely to the p-region. The electron density distribution\nn within the transition region is investigated as a function\nof the applied reverse bias V_c , and of the minority carrier electron\ncurrent density J which is injected into the transition region from the\nneutral p- region. It is shown that significant departures occur from the\nconventional solutions in which the presence of current is neglected. In\nparticular, the electron density n_c at the plane of injection and the\ntransition region thickness w_t, used as collector boundary conditions in\nthe analysis of transistor operation, are shown to be current-dependent.\n\nTwo cases are considered. In Case I, applicable to transistors\nwith an epitaxial layer under the collector, the electron velocity is\nassumed much less than the limiting drift velocity. For low injection\nlevel, where the minority carrier density n is everywhere less than the\nequilibrium majority carrier density p_p, the transition region is a\nessentially a depletion region and the injected electrons move in an\nelectric field determined uniquely by the applied voltage. It is shown\nthat n_ \u221d J and w_t \u221d V_c^(l/2). For high injection level, hen n >> p_p,\nthe transition region is essentially an accumulation region, and\nconditions of space-charge-limited current flow are established for which\nn_c \u221d J^(2/3) and w_t \u221d V_c^(2/3/(J^(l-/3)).\n \nIn Case II, applicable to most alloy and diffused-base transistors,\nthe electron velocity is assumed equal to the limiting drift velocity throughout the transition region. Mobile carrier depletion at low\ninjection again gives way to accumulation at high injection. The\nfunctional relationships remain as for Case I at low injection, but\nbecome n_c \u221d J , w_t \u221d V_c^(l/2/J^(1/2)) at high injection.\n\nSemi - quantitative and detailed quantitative treatments are developed,\nand normalized graphs of the minority carrier density as a function of\ndistance within the transition region are given for various junction\nvoltages and injected currents.", "date": "2012-11-08", "date_type": "published", "publisher": "California Institute of Technology", "id_number": "CaltechAUTHORS:20121108-134822372", "official_url": "https://resolver.caltech.edu/CaltechAUTHORS:20121108-134822372", "rights": "No commercial reproduction, distribution, display or performance rights in this work are provided.", "funders": { "items": [ { "agency": "NASA", "grant_number": "NAS 7-100" } ] }, "primary_object": { "basename": "Conditions_at_a_Reverse-Biased_p-n_Junction....pdf", "url": "https://authors.library.caltech.edu/records/9gbdr-9m441/files/Conditions_at_a_Reverse-Biased_p-n_Junction....pdf" }, "resource_type": "monograph", "pub_year": "2012", "author_list": "Middlebrook, R. D." } ]