<h1>Mead, Carver</h1> <h2>Article from <a href="https://authors.library.caltech.edu">CaltechAUTHORS</a></h2> <ul> <li>Mead, Carver (2023) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20230627-482016000.2">A Simple Cosmology in G4v</a>; Symmetry; Vol. 15; No. 7; Art. No. 1309; <a href="https://doi.org/10.3390/sym15071309">10.3390/sym15071309</a></li> <li>Mead, Carver (2023) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20230303-961872000.2">Neuromorphic Engineering: In Memory of Misha Mahowald</a>; Neural Computation; Vol. 35; No. 3; 348-383; <a href="https://doi.org/10.1162/neco_a_01553">10.1162/neco_a_01553</a></li> <li>Mead, Carver (2022) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20221128-1670000.2">Neuromorphic Engineering: In Memory of Misha Mahowald</a>; Neural Computation; <a href="https://doi.org/10.1162/neco_a_01553">10.1162/neco_a_01553</a></li> <li>Siegel, Peter H. and Mead, Carver (2021) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20210208-144010883">Carver Mead: "It's All About Thinking," A Personal Account Leading up to the First Microwave Transistor</a>; IEEE Journal of Microwaves; Vol. 1; No. 1; 269-274; <a href="https://doi.org/10.1109/jmw.2020.3028277">10.1109/jmw.2020.3028277</a></li> <li>Cramer, John Gleason and Mead, Carver Andress (2020) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20200625-075535642">Symmetry, Transactions, and the Mechanism of Wave Function Collapse</a>; Symmetry; Vol. 12; No. 8; Art. No. 1373; <a href="https://doi.org/10.3390/sym12081373">10.3390/sym12081373</a></li> <li>Mead, Carver (2020) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20200625-085609229">How we created neuromorphic engineering</a>; Nature Electronics; Vol. 3; No. 7; 434-435; <a href="https://doi.org/10.1038/s41928-020-0448-2">10.1038/s41928-020-0448-2</a></li> <li>Isi, Maximiliano and Weinstein, Alan J., el al. (2015) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150519-072427452">Detecting beyond-Einstein polarizations of continuous gravitational waves</a>; Physical Review D; Vol. 91; No. 8; Art. No. 082002; <a href="https://doi.org/10.1103/PhysRevD.91.082002">10.1103/PhysRevD.91.082002</a></li> <li>Yadid-Pecht, Orly and Fossum, Eric, el al. (1998) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150915-132810466">Active-Pixel Sensors With "Winner-Take-All" Mode</a>; NASA Tech Briefs; Vol. 22; 43-44</li> <li>Sarpeshkar, Rahul and Lyon, Richard F., el al. (1998) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150127-164613163">A Low-Power Wide-Dynamic-Range Analog VLSI Cochlea</a>; Analog Integrated Circuits and Signal Processing; Vol. 16; No. 3; 245-274; <a href="https://doi.org/10.1023/A:1008218308069">10.1023/A:1008218308069</a></li> <li>Hasler, Paul and Andreou, Andreas G., el al. (1998) <a href="https://resolver.caltech.edu/CaltechAUTHORS:HASvd98">Impact Ionization and Hot-Electron Injection Derived Consistently from Boltzmann Transport</a>; VLSI Design; Vol. 8; No. 1-4; 455-461; <a href="https://doi.org/10.1155/1998/73698">10.1155/1998/73698</a></li> <li>Diorio, Chris and Hasler, Paul, el al. (1997) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150113-162250820">A floating-gate MOS learning array with locally computed weight updates</a>; IEEE Transactions on Electron Devices; Vol. 44; No. 12; 2281-2289; <a href="https://doi.org/10.1109/16.644652">10.1109/16.644652</a></li> <li>Mead, Carver A. (1997) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MEApnas97">Collective electrodynamics I</a>; Proceedings of the National Academy of Sciences of the United States of America; Vol. 94; No. 12; 6013-6018; PMCID PMC20992</li> <li>Sarpeshkar, Rahul and Lyon, Richard F., el al. (1997) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150128-101534368">A Low-Power Wide-Linear-Range Transconductance Amplifier</a>; Analog Integrated Circuits and Signal Processing; Vol. 13; No. 1-2; 123-151; <a href="https://doi.org/10.1023/A:1008292213687">10.1023/A:1008292213687</a></li> <li>Diorio, Chris and Hasler, Paul, el al. (1997) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150127-165006071">A Complementary Pair of Four-Terminal Silicon Synapses</a>; Analog Integrated Circuits and Signal Processing; Vol. 13; No. 1-2; 153-166; <a href="https://doi.org/10.1023/A:1008244314595">10.1023/A:1008244314595</a></li> <li>Mead, Carver A. (1996) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150127-164258678">Scaling of MOS technology</a>; IEEE Micro; Vol. 16; No. 6; 48; <a href="https://doi.org/10.1109/40.546564">10.1109/40.546564</a></li> <li>Liu, Shih-Chii and Mead, Carver (1996) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150113-160926108">Continuous-time adaptive delay system</a>; IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing; Vol. 43; No. 11; 744-751; <a href="https://doi.org/10.1109/82.544027">10.1109/82.544027</a></li> <li>Diorio, Chris and Hasler, Paul, el al. (1996) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150113-160500726">A single-transistor silicon synapse</a>; IEEE Transactions on Electron Devices; Vol. 43; No. 11; 1972-1980; <a href="https://doi.org/10.1109/16.543035">10.1109/16.543035</a></li> <li>Minch, Bradley A. and Diorio, Chris, el al. (1996) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141222-163230369">Translinear Circuits Using Subthreshold Floating-Gate MOS Transistors</a>; Analog Integrated Circuits and Signal Processing; Vol. 9; No. 2; 167-179; <a href="https://doi.org/10.1007/BF00166412">10.1007/BF00166412</a></li> <li>Lee, Christopher H. and Ravaioli, Umberto, el al. (1995) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150112-160605437">Simulation of a long term memory device with a full bandstructure Monte Carlo approach</a>; IEEE Electron Device Letters; Vol. 16; No. 8; 360-362; <a href="https://doi.org/10.1109/55.400738">10.1109/55.400738</a></li> <li>Mead, Carver and Johnson, David, el al. (1995) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150313-134029205">New approach to data-path synthesis</a>; Electronic Engineering Times; No. 852; 66</li> <li>Douglas, Rodney and Mahowald, Misha, el al. (1995) <a href="https://resolver.caltech.edu/CaltechAUTHORS:DOUarn95">Neuromorphic analogue VLSI</a>; Annual Review of Neuroscience; Vol. 18; 255-281; <a href="https://doi.org/10.1146/annurev.ne.18.030195.001351">10.1146/annurev.ne.18.030195.001351</a></li> <li>Mead, Carver A. (1994) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141222-161742429">Scaling of MOS Technology to Submicrometer Feature Sizes</a>; Analog Integrated Circuits and Signal Processing; Vol. 6; No. 1; 9-25; <a href="https://doi.org/10.1007/BF01250732">10.1007/BF01250732</a></li> <li>Mead, Carver A. (1994) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150109-125350741">Scaling of MOS technology to submicrometer feature sizes</a>; Journal of VLSI Signal Processing; Vol. 8; No. 1; 9-25; <a href="https://doi.org/10.1007/BF02407107">10.1007/BF02407107</a></li> <li>Sarpeshkar, Rahul and Delbrück, Tobias, el al. (1993) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141222-153004031">White noise in MOS transistors and resistors</a>; IEEE Circuits and Devices Magazine; Vol. 9; No. 6; 23-29; <a href="https://doi.org/10.1109/101.261888">10.1109/101.261888</a></li> <li>Mead, Carver (1992) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141223-111358271">Neural computing challenges the status quo</a>; Computer Design; Vol. 31; No. 10; 98-99</li> <li>Watts, Lloyd and Kerns, Douglas A., el al. (1992) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141222-121340994">Improved implementation of the silicon cochlea</a>; IEEE Journal of Solid-State Circuits; Vol. 27; No. 5; 692-700; <a href="https://doi.org/10.1109/4.133156">10.1109/4.133156</a></li> <li>Mahowald, M. A. and Douglas, R. J., el al. (1992) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150915-135808440">An introduction to silicon neural analogs</a>; Seminars in the neurosciences; Vol. 4; No. 1; 83-92; <a href="https://doi.org/10.1016/1044-5765(92)90036-2">10.1016/1044-5765(92)90036-2</a></li> <li>Mead, Carver A. and Delbrück, Tobias (1991) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141222-162320871">Scanners for visualizing activity of analog VLSI circuitry</a>; Analog Integrated Circuits and Signal Processing; Vol. 1; No. 2; 93-106; <a href="https://doi.org/10.1007/BF00161303">10.1007/BF00161303</a></li> <li>Mahowald, Misha A. and Mead, Carver (1991) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150112-144735576">The Silicon Retina</a>; Scientific American; Vol. 264; No. 5; 76-82</li> <li>DeWeerth, Stephen P. and Nielsen, Lars, el al. (1991) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141222-120307757">A simple neuron servo</a>; IEEE Transactions on Neural Networks; Vol. 2; No. 2; 248-251; <a href="https://doi.org/10.1109/72.80335">10.1109/72.80335</a></li> <li>Mead, Carver A. and Arreguit, Xavier, el al. (1991) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141222-115251890">Analog VLSI model of binaural hearing</a>; IEEE Transactions on Neural Networks; Vol. 2; No. 2; 230-236; <a href="https://doi.org/10.1109/72.80333">10.1109/72.80333</a></li> <li>Mead, Carver (1990) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141222-113217405">Neuromorphic electronic systems</a>; Proceedings of the IEEE; Vol. 78; No. 10; 1629-1636; <a href="https://doi.org/10.1109/5.58356">10.1109/5.58356</a></li> <li>Mead, C. A. (1990) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141212-163723123">Machines Will Understand the World</a>; Fortune; Vol. 121; No. 7; 69</li> <li>Lazzaro, John and Mead, Carver (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:LAZpnas89">Silicon Modeling of Pitch Perception</a>; Proceedings of the National Academy of Sciences of the United States of America; Vol. 86; No. 23; 9597-9601; PMCID PMC298545; <a href="https://doi.org/10.1073/pnas.86.23.9597">10.1073/pnas.86.23.9597</a></li> <li>Maher, Mary Ann C. and DeWeerth, Stephen P., el al. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141218-114458819">Implementing neural architectures using analog VLSI circuits</a>; IEEE Transactions on Circuits and Systems; Vol. 36; No. 5; 643-652; <a href="https://doi.org/10.1109/31.31311">10.1109/31.31311</a></li> <li>Lazzaro, John and Mead, Carver A. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:LAZnc89">A silicon model of auditory localization</a>; Neural Computation; Vol. 1; No. 1; 47-57; <a href="https://doi.org/10.1162/neco.1989.1.1.47">10.1162/neco.1989.1.1.47</a></li> <li>Lyon, Richard F. and Mead, Carver (1988) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141218-114000809">An analog electronic cochlea</a>; IEEE Transactions on Acoustics, Speech, and Signal Processing; Vol. 36; No. 7; 1119-1134; <a href="https://doi.org/10.1109/29.1639">10.1109/29.1639</a></li> <li>Hutchinson, James and Koch, Christof, el al. (1988) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141217-153250575">Computing motion using analog and binary resistive networks</a>; Computer; Vol. 21; No. 3; 52-63; <a href="https://doi.org/10.1109/2.31">10.1109/2.31</a></li> <li>Mead, Carver A. and Mahowald, M. A. (1988) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141217-152336241">A silicon model of early visual processing</a>; Neural Networks; Vol. 1; No. 1; 91-97; <a href="https://doi.org/10.1016/0893-6080(88)90024-X">10.1016/0893-6080(88)90024-X</a></li> <li>Allen, Timothy P. and Mead, Carver A. (1988) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150313-133252018">A silicon retina for computing local edge orientations</a>; Neural Networks; Vol. 1; No. S1; 481; <a href="https://doi.org/10.1016/0893-6080(88)90503-5">10.1016/0893-6080(88)90503-5</a></li> <li>Mead, Carver A. (1987) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150213-142420573">Neural Hardware for Vision</a>; Engineering and Science; Vol. 50; No. 5; 2-7</li> <li>Maher, Mary Ann C. and Mead, Carver A. (1986) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141223-110109001">Modelling and simulation of integrated circuits</a>; Computer-Aided Design; Vol. 18; No. 9; 472-477; <a href="https://doi.org/10.1016/0010-4485(86)90003-5">10.1016/0010-4485(86)90003-5</a></li> <li>Lin, Tzu-Mu and Mead, Carver A. (1986) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150123-155931107">A Hierarchical Timing Simulation Model</a>; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems; Vol. 5; No. 1; 188-197; <a href="https://doi.org/10.1109/TCAD.1986.1270186">10.1109/TCAD.1986.1270186</a></li> <li>Lin, Tzu-Mu and Mead, Carver A. (1984) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150120-165111914">Signal Delay in General RC Networks</a>; IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems; Vol. 3; No. 4; 331-349; <a href="https://doi.org/10.1109/TCAD.1984.1270090">10.1109/TCAD.1984.1270090</a></li> <li>Mead, C. A. and Rem, M. (1984) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150114-104916717">Correction to "Minimum Propagation Delays in VLSI"</a>; IEEE Journal of Solid-State Circuits; Vol. 19; No. 1; 162; <a href="https://doi.org/10.1109/JSSC.1984.1052104">10.1109/JSSC.1984.1052104</a></li> <li>Mead, Carver A. and Lewicki, George (1982) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150108-132537509">Silicon compilers and foundries will usher in user-designed VLSI</a>; Electronics; Vol. 55; No. 16; 107-111</li> <li>Mead, Carver and Rem, Martin (1982) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150114-102708301">Minimum propagation delays in VLSI</a>; IEEE Journal of Solid-State Circuits; Vol. 17; No. 4; 773-775; <a href="https://doi.org/10.1109/JSSC.1982.1051810">10.1109/JSSC.1982.1051810</a></li> <li>Rem, Martin and Mead, Carver (1982) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150313-133632708">A notation for designing restoring logic circuitry in CMOS</a>; Microelectronics Journal; Vol. 13; No. 6; 5-10; <a href="https://doi.org/10.1016/S0026-2692(82)80130-4">10.1016/S0026-2692(82)80130-4</a></li> <li>Mead, Carver (1980) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20151008-152636094">Challenges Raised by VLSI Technology</a>; Military Electronics/Countermeasures; 35-38</li> <li>Mead, Carver A. (1979) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150127-163141287">The Impact of VLSI on Computer Science Education</a>; IEEE Transactions on Education; Vol. 22; No. 2; 43; <a href="https://doi.org/10.1109/TE.1979.4321288">10.1109/TE.1979.4321288</a></li> <li>Mead, Carver A. and Rem, Martin (1979) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150126-164326834">Cost and Performance of VLSI Computing Structures</a>; IEEE Transactions on Electron Devices; Vol. 26; No. 4; 533-540; <a href="https://doi.org/10.1109/T-ED.1979.19457">10.1109/T-ED.1979.19457</a></li> <li>Mohsen, Amr M. and Mead, Carver A. (1979) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150126-164740990">Delay-time optimization for driving and sensing of signals on high-capacitance paths of VLSI systems</a>; IEEE Transactions on Electron Devices; Vol. 26; No. 4; 540-548; <a href="https://doi.org/10.1109/T-ED.1979.19458">10.1109/T-ED.1979.19458</a></li> <li>Mohsen, Amr M. and Mead, Carver A. (1979) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150114-102206258">Delay-time optimization for driving and sensing of signals on high-capacitance paths of VLSI systems</a>; IEEE Journal of Solid-State Circuits; Vol. 14; No. 2; 462-470; <a href="https://doi.org/10.1109/JSSC.1979.1051198">10.1109/JSSC.1979.1051198</a></li> <li>Mead, Carver A. and Rem, Martin (1979) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150114-100150657">Cost and performance of VLSI computing structures</a>; IEEE Journal of Solid-State Circuits; Vol. 14; No. 2; 455-462; <a href="https://doi.org/10.1109/JSSC.1979.1051197">10.1109/JSSC.1979.1051197</a></li> <li>Cheng, Edmund K. and Mead, Carver A. (1978) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150114-104430588">A MOS cursive-character generator</a>; IEEE Journal of Solid-State Circuits; Vol. 13; No. 6; 832-837; <a href="https://doi.org/10.1109/JSSC.1978.1052057">10.1109/JSSC.1978.1052057</a></li> <li>Sutherland, Ivan E. and Mead, Carver A. (1977) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150112-151034722">Microelectronics and Computer Science</a>; Scientific American; Vol. 237; No. 3; 210-228</li> <li>Best, J. S. and McCaldin, J. O., el al. (1976) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BESapl76">HgSe, a highly electronegative stable metallic contact for semiconductor devices</a>; Applied Physics Letters; Vol. 29; No. 7; 433-434; <a href="https://doi.org/10.1063/1.89109">10.1063/1.89109</a></li> <li>Mead, Carver A. and Pashley, Richard D., el al. (1976) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150114-095719979">128-bit multicomparator</a>; IEEE Journal of Solid-State Circuits; Vol. 11; No. 5; 692-695; <a href="https://doi.org/10.1109/JSSC.1976.1050799">10.1109/JSSC.1976.1050799</a></li> <li>Mead, C. A. and McGill, T. C. (1976) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141217-152744175">Schottky barrier heights on p-type diamond and silicon carbide (6h)</a>; Physics Letters A; Vol. 58; No. 4; 249-251; <a href="https://doi.org/10.1016/0375-9601(76)90088-8">10.1016/0375-9601(76)90088-8</a></li> <li>Scranton, R. A. and Mooney, J. B., el al. (1976) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120808-132551604">Highly electronegative metallic contacts to semiconductors using polymeric sulfur nitride</a>; Applied Physics Letters; Vol. 29; No. 1; 47-48; <a href="https://doi.org/10.1063/1.88868">10.1063/1.88868</a></li> <li>McCaldin, J. O. and McGill, T. C., el al. (1976) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCCjvst76">Schottky barriers on compound semiconductors: The role of the anion</a>; Journal of Vacuum Science and Technology; Vol. 13; No. 4; 802-806; <a href="https://doi.org/10.1116/1.568993">10.1116/1.568993</a></li> <li>McCaldin, J. O. and McGill, T. C., el al. (1976) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCCprl76">Correlation for III-V and II-VI Semiconductors of the Au Schottky Barrier Energy with Anion Electronegativity</a>; Physical Review Letters; Vol. 36; No. 1; 56-58; <a href="https://doi.org/10.1103/PhysRevLett.36.56">10.1103/PhysRevLett.36.56</a></li> <li>McGill, T. C. and Mead, C. A. (1974) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCGjvst84b">Electrical interface barriers</a>; Journal of Vacuum Science and Technology; Vol. 11; No. 1; 122-127; <a href="https://doi.org/10.1116/1.1318540">10.1116/1.1318540</a></li> <li>Hall, James E. and Mead, C. A., el al. (1973) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150109-143557131">A barrier model for current flow in lipid bilayer membranes</a>; Journal of Membrane Biology; Vol. 11; No. 1; 75-97; <a href="https://doi.org/10.1007/BF01869814">10.1007/BF01869814</a></li> <li>Eisenberg, Moisés and Hall, James E., el al. (1973) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150109-141301409">The nature of the voltage-dependent conductance induced by alamethicin in black lipid membranes</a>; Journal of Membrane Biology; Vol. 14; No. 1; 143-176; <a href="https://doi.org/10.1007/BF01868075">10.1007/BF01868075</a></li> <li>Mohsen, Amr M. and McGill, T. C., el al. (1973) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150113-165257060">Charge transfer in overlapping gate charge-coupled devices</a>; IEEE Journal of Solid-State Circuits; Vol. 8; No. 3; 191-207; <a href="https://doi.org/10.1109/JSSC.1973.1050376">10.1109/JSSC.1973.1050376</a></li> <li>Mohsen, Amr M. and McGill, T. C., el al. (1973) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150113-162610060">The influence of interface states on incomplete charge transfer in overlapping gate charge-coupled devices</a>; IEEE Journal of Solid-State Circuits; Vol. 8; No. 2; 125-138; <a href="https://doi.org/10.1109/JSSC.1973.1050361">10.1109/JSSC.1973.1050361</a></li> <li>Mohsen, A. M. and McGill, T. C., el al. (1973) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MOHapl73">Push clocks: a new approach to charge-coupled devices clocking</a>; Applied Physics Letters; Vol. 22; No. 4; 172-175; <a href="https://doi.org/10.1063/1.1654600">10.1063/1.1654600</a></li> <li>Neville, R. C. and Mead, C. A. (1972) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141216-152028619">Surface barrier energies on strontium titanate</a>; Journal of Applied Physics; Vol. 43; No. 11; 4657-4663; <a href="https://doi.org/10.1063/1.1660984">10.1063/1.1660984</a></li> <li>Neville, R. and Hoeneisen, B., el al. (1972) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141216-151715740">Anomalous resonance of strontium titanate</a>; Journal of Applied Physics; Vol. 43; No. 10; 3903-3905; <a href="https://doi.org/10.1063/1.1660845">10.1063/1.1660845</a></li> <li>Hoeneisen, B. and Mead, C. A. (1972) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150927-233838341">Limitations in Microelectronics - II. Bipolar Technology</a>; Solid-State Electronics; Vol. 15; No. 8; 891-897; <a href="https://doi.org/10.1016/0038-1101(72)90026-3">10.1016/0038-1101(72)90026-3</a></li> <li>Hoeneisen, B. and Mead, C. A. (1972) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150212-160423500">Fundamental limitations in microelectronics — I. MOS technology</a>; Solid-State Electronics; Vol. 15; No. 7; 819-829; <a href="https://doi.org/10.1016/0038-1101(72)90103-7">10.1016/0038-1101(72)90103-7</a></li> <li>Neville, R. C. and Hoeneisen, B., el al. (1972) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141216-152948216">Permittivity of Strontium Titanate</a>; Journal of Applied Physics; Vol. 43; No. 5; 2124-2131; <a href="https://doi.org/10.1063/1.1661463">10.1063/1.1661463</a></li> <li>Lewicki, G. and Maserjian, J., el al. (1972) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141216-152524159">Barrier Energies in MIM Structures from Photoresponse: Effect of Scattering in the Insulating Film</a>; Journal of Applied Physics; Vol. 43; No. 4; 1764-1767; <a href="https://doi.org/10.1063/1.1661392">10.1063/1.1661392</a></li> <li>Hoeneisen, B. and Mead, C. A. (1972) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150126-163955527">Current-voltage characteristics of small size MOS transistors</a>; IEEE Transactions on Electron Devices; Vol. 19; No. 3; 382-383; <a href="https://doi.org/10.1109/T-ED.1972.17428">10.1109/T-ED.1972.17428</a></li> <li>Mead, Carver (1972) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150213-142621206">Computers That Put the Power Where It Belongs</a>; Engineering and Science; Vol. 35; No. 4; 4-9</li> <li>Hoeneisen, B. and Mead, C. A. (1971) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150212-160010452">Power Schottky diode design and comparison with the junction diode</a>; Solid-State Electronics; Vol. 14; No. 12; 1225-1236; <a href="https://doi.org/10.1016/0038-1101(71)90111-0">10.1016/0038-1101(71)90111-0</a></li> <li>Hoeneisen, B. and Mead, C. A., el al. (1971) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150929-092908338">Permittivity of β-Ga_2O_3 at low frequencies</a>; Solid-State Electronics; Vol. 14; No. 10; 1057-1059; <a href="https://doi.org/10.1016/0038-1101(71)90176-6">10.1016/0038-1101(71)90176-6</a></li> <li>McColl, M. and Millea, M. F., el al. (1971) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150929-091638824">Zero-bias Contact Resistances of Au-GaAs Scottky Barriers</a>; Solid-State Electronics; Vol. 14; No. 8; 677-683; <a href="https://doi.org/10.1016/0038-1101(71)90147-X">10.1016/0038-1101(71)90147-X</a></li> <li>Kurtin, S. L. and McGill, T. C., el al. (1971) <a href="https://resolver.caltech.edu/CaltechAUTHORS:KURprb71">Direct interelectrode tunneling in GaSe</a>; Physical Review B; Vol. 3; No. 10; 3368-3379; <a href="https://doi.org/10.1103/PhysRevB.3.3368">10.1103/PhysRevB.3.3368</a></li> <li>Mead, Carver A. (1971) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141215-165521589">Current Flow through Thin Insulating Films: Basic Principles and Device Applications</a>; Journal of Vacuum Science and Technology; Vol. 8; No. 1; 98; <a href="https://doi.org/10.1116/1.1316370">10.1116/1.1316370</a></li> <li>Neville, R. C. and Mead, C. A. (1970) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141216-151026878">Tunneling Currents in Zinc Oxide</a>; Journal of Applied Physics; Vol. 41; No. 13; 5285-5290; <a href="https://doi.org/10.1063/1.1658664">10.1063/1.1658664</a></li> <li>Kauffman, J. W. and Mead, C. A. (1970) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150212-155536034">Electrical Characteristics of Sphingomyelin Bilayer Membranes</a>; Biophysical Journal; Vol. 10; No. 11; 1084-1089; <a href="https://doi.org/10.1016/S0006-3495(70)86354-8">10.1016/S0006-3495(70)86354-8</a></li> <li>Kurtin, Stephen and McGill, T. C., el al. (1970) <a href="https://resolver.caltech.edu/CaltechAUTHORS:KURprl70">Tunneling Currents and the E-k Relation</a>; Physical Review Letters; Vol. 25; No. 11; 756-759; <a href="https://doi.org/10.1103/PhysRevLett.25.756">10.1103/PhysRevLett.25.756</a></li> <li>McGill, T. C. and Kurtin, S., el al. (1970) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCGjap70b">Contact-limited currents in metal-insulator-metal structures</a>; Journal of Applied Physics; Vol. 41; No. 9; 3831-3839; <a href="https://doi.org/10.1063/1.1659514">10.1063/1.1659514</a></li> <li>Neville, R. C. and Mead, C. A. (1970) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141216-151406070">Surface Barriers on Zinc Oxide</a>; Journal of Applied Physics; Vol. 41; No. 9; 3795-3800; <a href="https://doi.org/10.1063/1.1659509">10.1063/1.1659509</a></li> <li>Hsu, S. T. and Whittier, R. J., el al. (1970) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150212-155102555">Physical model for burst noise in semiconductor devices</a>; Solid-State Electronics; Vol. 13; No. 7; 1055-1071; <a href="https://doi.org/10.1016/0038-1101(70)90102-4">10.1016/0038-1101(70)90102-4</a></li> <li>Caywood, J. M. and Mead, C. A. (1970) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150929-092047338">Charge transport through α-monoclinic selenium</a>; Journal of Physics and Chemistry of Solids; Vol. 31; No. 5; 983-994; <a href="https://doi.org/10.1016/0022-3697(70)90309-4">10.1016/0022-3697(70)90309-4</a></li> <li>Kurtin, S. L. and Mead, C. A., el al. (1970) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150219-113338016">"Polywater": A Hydrosol?</a>; Science; Vol. 167; No. 3926; 1720-1722; <a href="https://doi.org/10.1126/science.167.3926.1720">10.1126/science.167.3926.1720</a></li> <li>Caywood, J. M. and Mead, C. A., el al. (1970) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20151007-161136079">Influence of carrier diffusion effects on window thickness of semiconductor detectors</a>; Nuclear Instruments and Methods; Vol. 79; No. 2; 329-332; <a href="https://doi.org/10.1016/0029-554X(70)90159-X">10.1016/0029-554X(70)90159-X</a></li> <li>Yu, A. Y. C. and Mead, C. A. (1970) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150929-092612724">Characteristics of Aluminum-silicon Schottky Barrier Diode</a>; Solid-State Electronics; Vol. 13; No. 2; 97-104; <a href="https://doi.org/10.1016/0038-1101(70)90039-0">10.1016/0038-1101(70)90039-0</a></li> <li>Parker, G. H. and Mead, C. A. (1969) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150901-163217733">Tunneling in CdTe Schottky Barriers</a>; Physical Review; Vol. 184; No. 3; 780-787; <a href="https://doi.org/10.1103/PhysRev.184.780">10.1103/PhysRev.184.780</a></li> <li>Kurtin, Stephen and Mead, C. A. (1969) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150309-153629367">Surface barriers on layer semiconductors: GaS, GaSe, GaTe</a>; Journal of Physics and Chemistry of Solids; Vol. 30; No. 8; 2007-2009; <a href="https://doi.org/10.1016/0022-3697(69)90179-6">10.1016/0022-3697(69)90179-6</a></li> <li>Caywood, J. M. and Mead, C. A. (1969) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141216-150707692">Origin of Field-Dependent Collection Efficiency in Contact-Limited Photoconductors</a>; Applied Physics Letters; Vol. 15; No. 1; 14-16; <a href="https://doi.org/10.1063/1.1652824">10.1063/1.1652824</a></li> <li>Caywood, J. M. and Mead, C. A., el al. (1969) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20151008-165307664">Origin of Field Dependent Collection Efficiency In Contact Limited Devices</a>; Helvetica Physica Acta; Vol. 42; No. 7-8; 948</li> <li>Kurtin, S. and McGill, T. C., el al. (1969) <a href="https://resolver.caltech.edu/CaltechAUTHORS:KURprl69">Fundamental transition in the electronic nature of solids</a>; Physical Review Letters; Vol. 22; No. 26; 1433-1436; <a href="https://doi.org/10.1103/PhysRevLett.22.1433">10.1103/PhysRevLett.22.1433</a></li> <li>Millea, M. F. and McColl, M., el al. (1969) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150901-161853962">Schottky Barriers on GaAs</a>; Physical Review; Vol. 177; No. 3; 1164-1172; <a href="https://doi.org/10.1103/PhysRev.177.1164">10.1103/PhysRev.177.1164</a></li> <li>Parker, G. H. and Mead, C. A. (1969) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141216-150229434">The Effect of Trapping States on Tunneling in Metal Semiconductor Junctions</a>; Applied Physics Letters; Vol. 14; No. 1; 21-23; <a href="https://doi.org/10.1063/1.1652641">10.1063/1.1652641</a></li> <li>Hunsperger, R. G. and Marsh, O. J., el al. (1968) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141215-165827280">The Presence of Deep Levels in Ion Implanted Junctions</a>; Applied Physics Letters; Vol. 13; No. 9; 295-297; <a href="https://doi.org/10.1063/1.1652619">10.1063/1.1652619</a></li> <li>Kurtin, Stephen and Mead, C. A. (1968) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141217-150028682">Surface barriers on layer semiconductors: GaSe</a>; Journal of Physics and Chemistry of Solids; Vol. 29; No. 10; 1865-1867; <a href="https://doi.org/10.1016/0022-3697(68)90170-4">10.1016/0022-3697(68)90170-4</a></li> <li>Kurtin, Stephen and Mead, C. A. (1968) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150126-163615311">GaSe Schottky barrier gate FET</a>; Proceedings of the IEEE; Vol. 56; No. 9; 1594-1595; <a href="https://doi.org/10.1109/PROC.1968.6658">10.1109/PROC.1968.6658</a></li> <li>Parker, G. H. and Mead, C. A. (1968) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150130-153034191">Energy-Momentum Relationship in InAs</a>; Physical Review Letters; Vol. 21; No. 9; 605-607; <a href="https://doi.org/10.1103/PhysRevLett.21.605">10.1103/PhysRevLett.21.605</a></li> <li>Hartman, T. E. and Blair, J. C., el al. (1968) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150901-120328599">Electrical conduction through thin amorphous SiC films</a>; Thin Solid Films; Vol. 2; No. 1-2; 79-93; <a href="https://doi.org/10.1016/0040-6090(68)90014-X">10.1016/0040-6090(68)90014-X</a></li> <li>Lewicki, G. and Mead, C. A. (1968) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141217-150418676">Currents through thin films of aluminum nitride</a>; Journal of Physics and Chemistry of Solids; Vol. 29; No. 7; 1255-1267; <a href="https://doi.org/10.1016/0022-3697(68)90218-7">10.1016/0022-3697(68)90218-7</a></li> <li>Parker, G. H. and McGill, T. C., el al. (1968) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141217-151846023">Electric field dependence of GaAs Schottky barriers</a>; Solid-State Electronics; Vol. 11; No. 2; 201-204; <a href="https://doi.org/10.1016/0038-1101(68)90079-8">10.1016/0038-1101(68)90079-8</a></li> <li>Maserjian, J. and Mead, C. A. (1967) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141217-145426453">Conduction through TiO_2 thin films with large ionic space charge</a>; Journal of Physics and Chemistry of Solids; Vol. 28; No. 10; 1971-1983; <a href="https://doi.org/10.1016/0022-3697(67)90175-8">10.1016/0022-3697(67)90175-8</a></li> <li>Thornber, K. K. and McGill, Thomas C., el al. (1967) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141216-154636409">The Tunneling Time of an Electron</a>; Journal of Applied Physics; Vol. 38; No. 5; 2384-2384; <a href="https://doi.org/10.1063/1.1709888">10.1063/1.1709888</a></li> <li>Deal, B. E. and Snow, E. H., el al. (1966) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141217-141254267">Barrier energies in metal-silicon dioxide-silicon structures</a>; Journal of Physics and Chemistry of Solids; Vol. 27; No. 11-12; 1873-1879; <a href="https://doi.org/10.1016/0022-3697(66)90118-1">10.1016/0022-3697(66)90118-1</a></li> <li>Stratton, R. and Lewicki, G., el al. (1966) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141217-143747442">The effect of nonparabolic energy bands on tunneling through thin insulating films</a>; Journal of Physics and Chemistry of Solids; Vol. 27; No. 10; 1599-1604; <a href="https://doi.org/10.1016/0022-3697(66)90238-1">10.1016/0022-3697(66)90238-1</a></li> <li>Yariv, A. and Mead, C. A., el al. (1966) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150114-105353734">5C3 - GaAs as an electrooptic modulator at 10.6 microns</a>; IEEE Journal of Quantum Electronics; Vol. 2; No. 8; 243-245; <a href="https://doi.org/10.1109/JQE.1966.1074037">10.1109/JQE.1966.1074037</a></li> <li>Mead, C. A. and Snow, E. H., el al. (1966) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141216-163126917">Barrier Lowering and Field Penetration at Metal-Dielectric Interfaces</a>; Applied Physics Letters; Vol. 9; No. 1; 53-55; <a href="https://doi.org/10.1063/1.1754598">10.1063/1.1754598</a></li> <li>Lewicki, G. and Mead, C. A. (1966) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150130-152604952">Experimental Determination of E−k Relationship in Electron Tunneling</a>; Physical Review Letters; Vol. 16; No. 21; 939-941; <a href="https://doi.org/10.1103/PhysRevLett.16.939">10.1103/PhysRevLett.16.939</a></li> <li>Leung, P. C. and Andermann, G., el al. (1966) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141217-144018278">Dielectric constants and infrared absorption of GaSe</a>; Journal of Physics and Chemistry of Solids; Vol. 27; No. 5; 549-588; <a href="https://doi.org/10.1016/0022-3697(66)90258-7">10.1016/0022-3697(66)90258-7</a></li> <li>Yariv, A. and Mead, C. A. (1966) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20140226-151844706">Semiconductors as Electrooptic Modulators for Infrared Radiation</a>; IEEE Journal of Quantum Electronics; Vol. 2; No. 4; 124-124; <a href="https://doi.org/10.1109/JQE.1966.1073840">10.1109/JQE.1966.1073840</a></li> <li>Surhigh, J. W. and Mead, C. A. (1966) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150831-170804728">Surface Barriers on SnO_2</a>; Physics Letters; Vol. 20; No. 4; 367; <a href="https://doi.org/10.1016/0031-9163(66)90742-6">10.1016/0031-9163(66)90742-6</a></li> <li>Lewicki, G. W. and Mead, C. A. (1966) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141216-162848152">Voltage Dependence of Barrier Height in AIN Tunnel Junctions</a>; Applied Physics Letters; Vol. 8; No. 4; 98-99; <a href="https://doi.org/10.1063/1.1754505">10.1063/1.1754505</a></li> <li>Mead, C. A. (1966) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150123-165629708">Schottky Barrier Gate Field Effect Transistor</a>; Proceedings of the IEEE; Vol. 54; No. 2; 307-308; <a href="https://doi.org/10.1109/PROC.1966.4661">10.1109/PROC.1966.4661</a></li> <li>Mead, C. A. (1966) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141217-151530128">Metal-semiconductor surface barriers</a>; Solid-State Electronics; Vol. 9; No. 11-12; 1023-1033; <a href="https://doi.org/10.1016/0038-1101(66)90126-2">10.1016/0038-1101(66)90126-2</a></li> <li>Mead, C. A. (1965) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141217-150924242">Surface barriers on ZnSe and ZnO</a>; Physics Letters; Vol. 18; No. 3; 218; <a href="https://doi.org/10.1016/0031-9163(65)90295-7">10.1016/0031-9163(65)90295-7</a></li> <li>Thornber, K. K. and Mead, C. A. (1965) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141217-135230195">Electronic Processes in α-Sulfur</a>; Journal of Physics and Chemistry of Solids; Vol. 26; No. 9; 1489-1495; <a href="https://doi.org/10.1016/0022-3697(65)90047-8">10.1016/0022-3697(65)90047-8</a></li> <li>Aven, Manuel and Mead, C. A. (1965) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141216-162020351">Electrical Transport and Contact Properties of Low Resistivity n Type Zinc Sulfide Crystals</a>; Applied Physics Letters; Vol. 7; No. 1; 8-10; <a href="https://doi.org/10.1063/1.1754243">10.1063/1.1754243</a></li> <li>Mead, C. A. (1965) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141216-161517797">Surface States on Semiconductor Crystals; Barriers on the Cd(Se:S) System</a>; Applied Physics Letters; Vol. 6; No. 6; 103-104; <a href="https://doi.org/10.1063/1.1754185">10.1063/1.1754185</a></li> <li>McColl, Malcolm and Mead, C. A. (1965) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150112-153251333">Electron Current Through Thin Mica Films</a>; Transactions of the Metallurgical Society of AIME; Vol. 233; 502-511</li> <li>Braunstein, A. and Braunstein, M., el al. (1965) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150130-152013585">Photoemissive Determination of Barrier Shape in Tunnel Junctions</a>; Physical Review Letters; Vol. 14; No. 7; 219-221; <a href="https://doi.org/10.1103/PhysRevLett.14.219">10.1103/PhysRevLett.14.219</a></li> <li>Mead, C. A. (1964) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141216-164458928">Energy gap in sulphur</a>; Physics Letters; Vol. 11; No. 3; 212-213; <a href="https://doi.org/10.1016/0031-9163(64)90410-X">10.1016/0031-9163(64)90410-X</a></li> <li>Mead, C. A. (1964) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141216-154119053">Photothresholds in Mg_2Ge</a>; Journal of Applied Physics; Vol. 35; No. 8; 2460-2462; <a href="https://doi.org/10.1063/1.1702881">10.1063/1.1702881</a></li> <li>Mead, C. A. and Spitzer, W. G. (1964) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150128-111216077">Fermi Level Position at Metal-Semiconductor Interfaces</a>; Physical Review; Vol. 134; No. 3A; A713-A716; <a href="https://doi.org/10.1103/PhysRev.134.A713">10.1103/PhysRev.134.A713</a></li> <li>Spitzer, W. G. and Mead, C. A. (1964) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141217-132959611">Conduction band minimum of CdTe</a>; Journal of Physics and Chemistry of Solids; Vol. 25; No. 4; 443-447; <a href="https://doi.org/10.1016/0022-3697(64)90011-3">10.1016/0022-3697(64)90011-3</a></li> <li>Spitzer, W. G. and Mead, C. A. (1964) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150128-102608367">Conduction Band Minima of Ga(As_(1−x)P_x)</a>; Physical Review; Vol. 133; No. 3A; A872-A875; <a href="https://doi.org/10.1103/PhysRev.133.A872">10.1103/PhysRev.133.A872</a></li> <li>Mead, C. A. and Spitzer, W. G. (1963) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150130-151553668">Conduction Band Minima in AlAs and AlSb</a>; Physical Review Letters; Vol. 11; No. 8; 358-360; <a href="https://doi.org/10.1103/PhysRevLett.11.358">10.1103/PhysRevLett.11.358</a></li> <li>Spitzer, W. G. and Mead, C. A. (1963) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141216-155213675">Barrier Height Studies on Metal-Semiconductor Systems</a>; Journal of Applied Physics; Vol. 34; No. 10; 3061-3069; <a href="https://doi.org/10.1063/1.1729121">10.1063/1.1729121</a></li> <li>Mead, C. A. and Spitzer, W. G. (1963) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150128-164226292">Fermi Level Position at Semiconductor Surfaces</a>; Physical Review Letters; Vol. 10; No. 11; 471-472; <a href="https://doi.org/10.1103/PhysRevLett.10.471">10.1103/PhysRevLett.10.471</a></li> <li>Mead, C. A. (1963) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150123-164938159">Metal contact double injection in GaAs</a>; Proceedings of the IEEE; Vol. 51; No. 6; 954-955; <a href="https://doi.org/10.1109/PROC.1963.2355">10.1109/PROC.1963.2355</a></li> <li>Mead, C. A. and Spitzer, W. G. (1963) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141216-160600955">Photoemission from Au and Cu into CdS</a>; Applied Physics Letters; Vol. 2; No. 4; 74-75; <a href="https://doi.org/10.1063/1.1753781">10.1063/1.1753781</a></li> <li>Mead, C. A. (1962) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MEApr62">Electron transport mechanisms in thin insulating films</a>; Physical Review; Vol. 128; No. 5; 2088-2093; <a href="https://doi.org/10.1103/PhysRev.128.2088">10.1103/PhysRev.128.2088</a></li> <li>Mead, C. A. (1962) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150901-114712753">Pulse Characteristic Display for Tunnel Emission Devices</a>; Review of Scientific Instruments; Vol. 33; No. 3; 376-377; <a href="https://doi.org/10.1063/1.1717847">10.1063/1.1717847</a></li> <li>Mead, C. A. (1962) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MEAprl62">Transport of hot electrons in thin gold films</a>; Physical Review Letters; Vol. 8; No. 2; 56-57; <a href="https://doi.org/10.1103/PhysRevLett.8.56">10.1103/PhysRevLett.8.56</a></li> <li>Mead, C. A. (1961) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MEAprl61">Anomalous capacitance of thin dielectric structures</a>; Physical Review Letters; Vol. 6; No. 10; 545-546; <a href="https://doi.org/10.1103/PhysRevLett.6.545">10.1103/PhysRevLett.6.545</a></li> <li>Mead, C. A. (1961) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141216-155808028">Operation of Tunnel‐Emission Devices</a>; Journal of Applied Physics; Vol. 32; No. 4; 646-652; <a href="https://doi.org/10.1063/1.1736064">10.1063/1.1736064</a></li> <li>Mead, C. A. (1960) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150128-162613453">Transistor Switching Analysis Part 3</a>; Semiconductor Products; Vol. 3; No. 11; 28-32</li> <li>Mead, C. A. (1960) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150128-162326627">Transistor Switching Analysis Part 2</a>; Semiconductor Products; Vol. 3; No. 10; 38-42</li> <li>Mead, C. A. (1960) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150128-161929182">Transistor switching analysis Part 1</a>; Semiconductor Products; Vol. 3; No. 9; 43-47</li> <li>Mead, C. A. (1960) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150831-162415263">A Note on Tunnel Emission</a>; Proceedings of the IRE; Vol. 48; No. 8; 1478</li> <li>Mead, C. A. (1960) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141217-151240614">The operation of junction transistors at high currents and in saturation</a>; Solid-State Electronics; Vol. 1; No. 3; 211-224; <a href="https://doi.org/10.1016/0038-1101(60)90009-5">10.1016/0038-1101(60)90009-5</a></li> <li>Mead, C. A. (1960) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150831-161938603">Relativity and the Scientific Method</a>; Proceedings of the IRE; Vol. 48; No. 6; 1160-1161</li> <li>Mead, C. A. (1960) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150126-165741502">The Tunnel-Emission Amplifier</a>; Proceedings of the IRE; Vol. 48; No. 3; 359-361</li> <li>Mead, Carver A. (1960) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20161121-142936546">Transistor Switching Analysis</a>; Semiconductor Products</li> <li>Middlebrook, R. D. and Mead, C. A. (1959) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150901-113532040">Transistor AC and DC Amplifiers With High Input Impedance</a>; Semiconductor Products; Vol. 2; 26-35</li> </ul>