<h1>McGill, Thomas C.</h1>
<h2>Combined from <a href="https://authors.library.caltech.edu">CaltechAUTHORS</a></h2>
<ul>
<li>Cartoixà, X. and Ting, D. Z.-Y., el al. (2003) <a href="https://resolver.caltech.edu/CaltechAUTHORS:CARprb03">Description of bulk inversion asymmetry in the effective-bond-orbital model</a>; Physical Review B; Vol. 68; No. 23; Art. No. 235319; <a href="https://doi.org/10.1103/PhysRevB.68.235319">10.1103/PhysRevB.68.235319</a></li>
<li>Strittmatter, R. P. and Beach, R. A., el al. (2003) <a href="https://resolver.caltech.edu/CaltechAUTHORS:STRIjap03">Piezoelectrically enhanced capacitive strain sensors using GaN metal-insulator-semiconductor diodes</a>; Journal of Applied Physics; Vol. 94; No. 9; 5958-5963; <a href="https://doi.org/10.1063/1.1611267">10.1063/1.1611267</a></li>
<li>Preisler, E. J. and Brooke, J., el al. (2003) <a href="https://resolver.caltech.edu/CaltechAUTHORS:PREjvstb03">Pulsed laser deposition growth of Fe3O4 on III–V semiconductors for spin injection</a>; Journal of Vacuum Science and Technology B; Vol. 21; No. 4; 1745-1748; <a href="https://doi.org/10.1116/1.1588648">10.1116/1.1588648</a></li>
<li>Cartoixà, X. and Ting, D. Z.-Y., el al. (2003) <a href="https://resolver.caltech.edu/CaltechAUTHORS:CARnanotech03">An efficient multiband envelope function approximation method for spintronics</a>; Nanotechnology; Vol. 14; No. 2; 308-311; <a href="https://doi.org/10.1088/0957-4484/14/2/340">10.1088/0957-4484/14/2/340</a></li>
<li>Ting, D. Z.-Y. and Cartoixà, X., el al. (2002) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20200103-162108300">Modeling Spin-Dependent Transport in InAs/GaSb/AlSb Resonant Tunneling Structures</a>; Journal of Computational Electronics; Vol. 1; No. 1-2; 147-151; <a href="https://doi.org/10.1023/a:1020748702245">10.1023/a:1020748702245</a></li>
<li>Cartoixà, X. and Ting, D. Z.-Y., el al. (2002) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20191112-111435523">Theoretical Investigations of Spin Splittings and Optimization of the Rashba Coefficient in Asymmetric AlSb/InAs/GaSb Heterostructures</a>; Journal of Computational Electronics; Vol. 1; No. 1-2; 141-146; <a href="https://doi.org/10.1023/a:1020796618175">10.1023/a:1020796618175</a></li>
<li>Oldham, N. C. and Hill, C. J., el al. (2002) <a href="https://resolver.caltech.edu/CaltechAUTHORS:OLDjvsta02">Deposition of Ga2O3–x ultrathin films on GaAs by e-beam evaporation</a>; Journal of Vacuum Science and Technology A; Vol. 20; No. 3; 809-813; <a href="https://doi.org/10.1116/1.1469011">10.1116/1.1469011</a></li>
<li>Preisler, E. J. and Marsh, O. J., el al. (2001) <a href="https://resolver.caltech.edu/CaltechAUTHORS:PREjvstb01">Stability of cerium oxide on silicon studied by x-ray photoelectron spectroscopy</a>; Journal of Vacuum Science and Technology B; Vol. 19; No. 4; 1611-1618; <a href="https://doi.org/10.1116/1.1387464">10.1116/1.1387464</a></li>
<li>Cheng, X.-C. and Cartoixà, X., el al. (2000) <a href="https://resolver.caltech.edu/CaltechAUTHORS:CHEjap00">Tunnel switch diode based on AlSb/GaSb heterojunctions</a>; Journal of Applied Physics; Vol. 88; No. 11; 6948-6950; <a href="https://doi.org/10.1063/1.1317236">10.1063/1.1317236</a></li>
<li>Hill, C. J. and Beach, R. A., el al. (2000) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20111130-095036875">Nickel layers on indium arsenide</a>; Journal of Vacuum Science and Technology B; Vol. 18; No. 4; 2044-2046; <a href="https://doi.org/10.1116/1.1306283">10.1116/1.1306283</a></li>
<li>Alonzo, A. C. and Cheng, X.-C., el al. (2000) <a href="https://resolver.caltech.edu/CaltechAUTHORS:ALOjap00">Strain in wet thermally oxidized square and circular mesas</a>; Journal of Applied Physics; Vol. 87; No. 9; 4594-4599; <a href="https://doi.org/10.1063/1.373108">10.1063/1.373108</a></li>
<li>Hill, C. J. and Bridger, P. M., el al. (1999) <a href="https://resolver.caltech.edu/CaltechAUTHORS:HILapl99">Scanning apertureless microscopy below the diffraction limit: Comparisons between theory and experiment</a>; Applied Physics Letters; Vol. 75; No. 25; 4022-4024; <a href="https://doi.org/10.1063/1.125525">10.1063/1.125525</a></li>
<li>Cheng, X.-C. and McGill, T. C. (1999) <a href="https://resolver.caltech.edu/CaltechAUTHORS:CHEjap99">Near infrared avalanche photodiodes with bulk Al0.04Ga0.96Sb and GaSb/AlSb superlattice gain layers</a>; Journal of Applied Physics; Vol. 86; No. 8; 4576-4579; <a href="https://doi.org/10.1063/1.371405">10.1063/1.371405</a></li>
<li>Jones, J. T. and Bridger, P. M., el al. (1999) <a href="https://resolver.caltech.edu/CaltechAUTHORS:JONapl99">Charge storage in CeO2/Si/CeO2/Si(111) structures by electrostatic force microscopy</a>; Applied Physics Letters; Vol. 75; No. 9; 1326-1328; <a href="https://doi.org/10.1063/1.124682">10.1063/1.124682</a></li>
<li>Bridger, P. M. and Bandić, Z. Z., el al. (1999) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BRIjvstb99">Electric force microscopy of induced charges and surface potentials in GaN modified by light and strain</a>; Journal of Vacuum Science and Technology B; Vol. 17; No. 4; 1750-1752; <a href="https://doi.org/10.1116/1.590819">10.1116/1.590819</a></li>
<li>Beach, R. A. and McGill, T. C. (1999) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BEAjvstb99">Piezoelectric fields in nitride devices</a>; Journal of Vacuum Science and Technology B; Vol. 17; No. 4; 1753-1756; <a href="https://doi.org/10.1116/1.590820">10.1116/1.590820</a></li>
<li>Bridger, P. M. and Bandić, Z. Z., el al. (1999) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BRIapl99">Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy</a>; Applied Physics Letters; Vol. 74; No. 23; 3522-3524; <a href="https://doi.org/10.1063/1.124148">10.1063/1.124148</a></li>
<li>Piquette, E. C. and Bridger, P. M., el al. (1999) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120110-101005142">Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphire</a>; Journal of Vacuum Science and Technology B; Vol. 17; No. 3; 1241-1245; <a href="https://doi.org/10.1116/1.590730">10.1116/1.590730</a></li>
<li>Cheng, X-C. and McGill, T. C. (1999) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20181107-155256105">Avalanche photodetector in the GaSb/AlSb/InAs material system by molecular beam epitaxy</a>; ISBN 9780819430991; Photodetectors: Materials and Devices IV; 268-278; <a href="https://doi.org/10.1117/12.344563">10.1117/12.344563</a></li>
<li>Bandić, Z. Z. and Bridger, P. M., el al. (1999) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BANapl99">High voltage (450 V) GaN Schottky rectifiers</a>; Applied Physics Letters; Vol. 74; No. 9; 1266-1268; <a href="https://doi.org/10.1063/1.123520">10.1063/1.123520</a></li>
<li>Beach, R. A. and Piquette, E. C., el al. (1999) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BEAmrsijnsr99">XPS Study of Oxygen Adsorption on (3x3) Reconstructed MBE Grown GaN Surfaces</a>; MRS Internet Journal of Nitride Semiconductor Research; Vol. 4; No. S1; Art. No. G6.26</li>
<li>Piquette, E. C. and Bridger, P. M., el al. (1999) <a href="https://resolver.caltech.edu/CaltechAUTHORS:PIQmrsijsnr99">Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE</a>; MRS Internet Journal of Nitride Semiconductor Research; Vol. 4S1; Art. No. G3.77</li>
<li>Alonzo, A. C. and Cheng, X.-C., el al. (1998) <a href="https://resolver.caltech.edu/CaltechAUTHORS:ALOjap98">Effect of cylindrical geometry on the wet thermal oxidation of AlAs</a>; Journal of Applied Physics; Vol. 84; No. 12; 6901-6905; <a href="https://doi.org/10.1063/1.368987">10.1063/1.368987</a></li>
<li>Bridger, P. M. and Bandić, Z. Z., el al. (1998) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BRIapl98">Correlation between the surface defect distribution and minority carrier transport properties in GaN</a>; Applied Physics Letters; Vol. 73; No. 23; 3438-3440; <a href="https://doi.org/10.1063/1.122790">10.1063/1.122790</a></li>
<li>Bandić, Z. Z. and Bridger, P. M., el al. (1998) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BANapl98b">Electron diffusion length and lifetime in p-type GaN</a>; Applied Physics Letters; Vol. 73; No. 22; 3276-3278; <a href="https://doi.org/10.1063/1.122743">10.1063/1.122743</a></li>
<li>Jones, J. T. and Croke, E. T., el al. (1998) <a href="https://resolver.caltech.edu/CaltechAUTHORS:JONjvstb98">Epitaxial silicon grown on CeO2/Si(111) structure by molecular beam epitaxy</a>; Journal of Vacuum Science and Technology B; Vol. 16; No. 5; 2686-2689; <a href="https://doi.org/10.1116/1.590257">10.1116/1.590257</a></li>
<li>Daniel, E. S. and Ting, D. Z.-Y., el al. (1998) <a href="https://resolver.caltech.edu/CaltechAUTHORS:DANsst98">Experimental and theoretical study of ultra-thin oxides</a>; Semiconductor Science and Technology; Vol. 13; No. 8A; A155-A159; <a href="https://doi.org/10.1088/0268-1242/13/8A/044">10.1088/0268-1242/13/8A/044</a></li>
<li>Cheng, X.-C. and McGill, T. C. (1998) <a href="https://resolver.caltech.edu/CaltechAUTHORS:CHEjvstb98">Ballistic electron emission microscopy spectroscopy study of AlSb and InAs/AlSb superlattice barriers</a>; Journal of Vacuum Science and Technology B; Vol. 16; No. 4; 2291-2295; <a href="https://doi.org/10.1116/1.590235">10.1116/1.590235</a></li>
<li>Ting, D. Z.-Y. and McGill, T. C. (1998) <a href="https://resolver.caltech.edu/CaltechAUTHORS:TINjvstb98">Effects of interface roughness and conducting filaments in metal–oxide–semiconductor tunnel structures</a>; Journal of Vacuum Science and Technology B; Vol. 16; No. 4; 2182-2187; <a href="https://doi.org/10.1116/1.590297">10.1116/1.590297</a></li>
<li>Bandić, Z. Z. and Piquette, E. C., el al. (1998) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BANapl98">Solid phase recrystallization of ZnS thin films on sapphire</a>; Applied Physics Letters; Vol. 72; No. 22; 2862-2864; <a href="https://doi.org/10.1063/1.121483">10.1063/1.121483</a></li>
<li>Ting, D. Z.-Y. and Daniel, Erik S., el al. (1998) <a href="https://resolver.caltech.edu/CaltechAUTHORS:TINvd98b">Interface Roughness Effects in Ultra-Thin Tunneling Oxides</a>; VLSI Design; Vol. 8; No. 1-4; 47-51; <a href="https://doi.org/10.1155/1998/23567">10.1155/1998/23567</a></li>
<li>Ting, D. Z.-Y. and McGill, T. C. (1998) <a href="https://resolver.caltech.edu/CaltechAUTHORS:TINvd98a">Modeling Light-Extraction Characteristics of Packaged Light-Emitting Diodes</a>; VLSI Design; Vol. 6; No. 1-4; 363-366; <a href="https://doi.org/10.1155/1998/12165">10.1155/1998/12165</a></li>
<li>Piquette, E. C. and Bandić, Z. Z., el al. (1997) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120130-111304712">Growth and characterization of light emitting ZnS/GaN heterostructures</a>; Journal of Vacuum Science and Technology B; Vol. 15; No. 4; 1148-1152; <a href="https://doi.org/10.1116/1.589430">10.1116/1.589430</a></li>
<li>Daniel, E. S. and Jones, J. T., el al. (1997) <a href="https://resolver.caltech.edu/CaltechAUTHORS:DANjvstb97">Macroscopic and microscopic studies of electrical properties of very thin silicon dioxide subject to electrical stress</a>; Journal of Vacuum Science and Technology B; Vol. 15; No. 4; 1089-1096; <a href="https://doi.org/10.1116/1.589419">10.1116/1.589419</a></li>
<li>Cheng, X.-C. and Collins, D. A., el al. (1997) <a href="https://resolver.caltech.edu/CaltechAUTHORS:CHEjvsta97">Mapping of AlxGa1–xAs band edges by ballistic electron emission spectroscopy</a>; Journal of Vacuum Science and Technology A; Vol. 15; No. 4; 2063-2068; <a href="https://doi.org/10.1116/1.580609">10.1116/1.580609</a></li>
<li>Walachová, J. and Zelinka, J., el al. (1997) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120131-105259402">Probing of InAs/AlSb double barrier heterostructures by ballistic electron emission spectroscopy</a>; Applied Physics Letters; Vol. 70; No. 26; 3588-3590; <a href="https://doi.org/10.1063/1.119274">10.1063/1.119274</a></li>
<li>Ting, D. Z.-Y. and McGill, T. C. (1996) <a href="https://resolver.caltech.edu/CaltechAUTHORS:TINjvstb96">Interface roughness effects on transport in tunnel structures</a>; Journal of Vacuum Science and Technology B; Vol. 14; No. 4; 2790-2793; <a href="https://doi.org/10.1116/1.588834">10.1116/1.588834</a></li>
<li>Pettersson, P. O. and Ahn, C. C., el al. (1996) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120208-152428438">Characterization of Si/Si_(1-y)C_y superlattices grown by surfactant assisted molecular beam epitaxy</a>; Journal of Vacuum Science and Technology B; Vol. 14; No. 4; 3030-3034; <a href="https://doi.org/10.1116/1.589059">10.1116/1.589059</a></li>
<li>Bandić, Z. Z. and McGill, T. C., el al. (1996) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BANjvstb96">Microscopic processes during electron cyclotron resonance microwave nitrogen plasma-assisted molecular beam epitaxial growth of GaN/GaAs heterostructures: Experiments and kinetic modeling</a>; Journal of Vacuum Science and Technology B; Vol. 14; No. 4; 2948-2951; <a href="https://doi.org/10.1116/1.588940">10.1116/1.588940</a></li>
<li>Marquardt, R. R. and Collins, D. A., el al. (1996) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20110728-075734422">Resonant magnetotunneling spectroscopy of p-type-well interband tunneling diodes</a>; Physical Review B; Vol. 53; No. 20; 13624-13630; <a href="https://doi.org/10.1103/PhysRevB.53.13624">10.1103/PhysRevB.53.13624</a></li>
<li>Bandić, Z. Z. and Hauenstein, R. J., el al. (1996) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BANapl96">Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma-assisted molecular beam epitaxial growth of GaN/GaAs-based heterostructures</a>; Applied Physics Letters; Vol. 68; No. 11; 1510-1512; <a href="https://doi.org/10.1063/1.115682">10.1063/1.115682</a></li>
<li>Ting, David Z.-Y. and McGill, Thomas C. (1995) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20180801-083741353">Monte Carlo simulation of light-emitting diode light-extraction characteristics</a>; Optical Engineering; Vol. 34; No. 12; 3545-3553; <a href="https://doi.org/10.1117/12.215485">10.1117/12.215485</a></li>
<li>Pettersson, P. O. and Ahn, C. C., el al. (1995) <a href="https://resolver.caltech.edu/CaltechAUTHORS:PETapl95">Sb-surfactant-mediated growth of Si/Si1–yCy superlattices by molecular-beam epitaxy</a>; Applied Physics Letters; Vol. 67; No. 17; 2530-2532; <a href="https://doi.org/10.1063/1.114448">10.1063/1.114448</a></li>
<li>Collins, D. A. and Papa, G. O., el al. (1995) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120216-093141833">Real-time extraction of growth rates from rotating substrates  during molecular-beam epitaxy</a>; Journal of Vacuum Science and Technology B; Vol. 13; No. 5; 1953-1959; <a href="https://doi.org/10.1116/1.588114">10.1116/1.588114</a></li>
<li>Wang, M. W. and Collins, D. A., el al. (1995) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120224-070410762">Study of interface asymmetry in InAs–GaSb heterojunctions</a>; Journal of Vacuum Science and Technology B; Vol. 13; No. 4; 1689-1693; <a href="https://doi.org/10.1116/1.587879">10.1116/1.587879</a></li>
<li>Wang, M. W. and McCaldin, J. O., el al. (1995) <a href="https://resolver.caltech.edu/CaltechAUTHORS:WANapl95">Schottky-based band lineups for refractory semiconductors</a>; Applied Physics Letters; Vol. 66; No. 15; 1974-1976; <a href="https://doi.org/10.1063/1.113295">10.1063/1.113295</a></li>
<li>Feenstra, R. M. and Collins, D. A., el al. (1994) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120306-154451844">Scanning tunneling microscopy of lnAs/GaSb superlattices: Subbands, interface roughness, and interface asymmetry</a>; Journal of Vacuum Science and Technology B; Vol. 12; No. 4; 2592-2597; <a href="https://doi.org/10.1116/1.587215">10.1116/1.587215</a></li>
<li>Wang, M. W. and Swenberg, J. F., el al. (1994) <a href="https://resolver.caltech.edu/CaltechAUTHORS:WANapl94">X-ray photoelectron spectroscopy measurement of valence-band offsets for Mg-based semiconductor compounds</a>; Applied Physics Letters; Vol. 64; No. 25; 3455-3457; <a href="https://doi.org/10.1063/1.111239">10.1063/1.111239</a></li>
<li>Kirby, S. K. and Ting, D. Z.-Y., el al. (1994) <a href="https://resolver.caltech.edu/CaltechAUTHORS:KIRsst94">Fluctuations in the transmission properties of a quantum dot with interface roughness and impurities</a>; Semiconductor Science and Technology; Vol. 9; No. 5S; 918-921; <a href="https://doi.org/10.1088/0268-1242/9/5S/139">10.1088/0268-1242/9/5S/139</a></li>
<li>Collins, D. A. and Wang, M. W., el al. (1994) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120222-100154823">Reflection high energy electron diffraction observation of exchange reaction dynamics on InAs surfaces</a>; Journal of Vacuum Science and Technology B; Vol. 12; No. 2; 1125-1128; <a href="https://doi.org/10.1116/1.587063">10.1116/1.587063</a></li>
<li>Ting, D. Z.-Y. and Kirby, S. K., el al. (1993) <a href="https://resolver.caltech.edu/CaltechAUTHORS:TINjvstb93">Three-dimensional simulations of quantum transport in semiconductor nanostructures</a>; Journal of Vacuum Science and Technology B; Vol. 11; No. 4; 1738-1742; <a href="https://doi.org/10.1116/1.586472">10.1116/1.586472</a></li>
<li>Wang, M. W. and Collins, D. A., el al. (1993) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120308-070903192">X-ray photoelectron spectroscopy investigation of the mixed anion GaSb/InAs heterointerface</a>; Journal of Vacuum Science and Technology B; Vol. 11; No. 4; 1418-1422; <a href="https://doi.org/10.1116/1.586952">10.1116/1.586952</a></li>
<li>Wang, M. W. and Phillips, M. C., el al. (1993) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120307-105358808">n-CdSe/p-ZnTe based wide band-gap light emitters: Numerical simulation and design</a>; Journal of Applied Physics; Vol. 73; No. 9; 4660-4668; <a href="https://doi.org/10.1063/1.352761">10.1063/1.352761</a></li>
<li>Miles, R. H. and Schulman, J. N., el al. (1993) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MILsst93">Electronic band structure of far-infrared Ga1-xInxSb/InAs superlattices</a>; Semiconductor Science and Technology; Vol. 8; No. 1S; S102-S105; <a href="https://doi.org/10.1088/0268-1242/8/1S/023">10.1088/0268-1242/8/1S/023</a></li>
<li>Yu, E. T. and Phillips, M. C., el al. (1992) <a href="https://resolver.caltech.edu/CaltechAUTHORS:YUEprb92">Interfacial reactions and band offsets in the AlSb/GaSb/ZnTe material system</a>; Physical Review B; Vol. 46; No. 20; 13379-13388; <a href="https://doi.org/10.1103/PhysRevB.46.13379">10.1103/PhysRevB.46.13379</a></li>
<li>McCaldin, J. O. and McGill, T. C. (1992) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCCapl92">Comment on &quot;Empirical fit to band discontinuities and barrier heights in III-V alloy systems&quot;</a>; Applied Physics Letters; Vol. 61; No. 18; 2243; <a href="https://doi.org/10.1063/1.108255">10.1063/1.108255</a></li>
<li>Phillips, M. C. and Wang, M. W., el al. (1992) <a href="https://resolver.caltech.edu/CaltechAUTHORS:PHIapl92">Proposal and verification of a new visible light emitter based on wide band gap II-VI semiconductors</a>; Applied Physics Letters; Vol. 61; No. 16; 1962-1964; <a href="https://doi.org/10.1063/1.108353">10.1063/1.108353</a></li>
<li>Collins, D. A. and Fu, T. C., el al. (1992) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120316-101012482">Reflection high-energy electron diffraction studies of the growth of lnAs/Ga_(1-x)In_xSb strained-layer superlattices</a>; Journal of Vacuum Science and Technology B; Vol. 10; No. 4; 1779-1783; <a href="https://doi.org/10.1116/1.586240">10.1116/1.586240</a></li>
<li>Liu, Y. X. and Wang, M. W., el al. (1992) <a href="https://resolver.caltech.edu/CaltechAUTHORS:LIUjvstb92">Schottky barrier induced injecting contact on wide band gap semiconductors</a>; Journal of Vacuum Science and Technology B; Vol. 10; No. 4; 2072-2076; <a href="https://doi.org/10.1116/1.586320">10.1116/1.586320</a></li>
<li>Ting, D. Z.-Y. and McGill, T. C. (1992) <a href="https://resolver.caltech.edu/CaltechAUTHORS:TINjvstb92">Effect of Gamma–X mixing on electron tunneling times in GaAs/AlAs double barrier heterostructures</a>; Journal of Vacuum Science and Technology B; Vol. 10; No. 4; 1980-1983; <a href="https://doi.org/10.1116/1.586170">10.1116/1.586170</a></li>
<li>Ting, D. Z.-Y. and Yu, E. T., el al. (1992) <a href="https://resolver.caltech.edu/CaltechAUTHORS:TINprb92">Multiband treatment of quantum transport in interband tunnel devices</a>; Physical Review B; Vol. 45; No. 7; 3583-3592; <a href="https://doi.org/10.1103/PhysRevB.45.3583">10.1103/PhysRevB.45.3583</a></li>
<li>Chow, D. H. and Miles, R. H., el al. (1991) <a href="https://resolver.caltech.edu/CaltechAUTHORS:CHOsst91.829">Type II superlattices for infrared detectors and devices</a>; Semiconductor Science and Technology; Vol. 6; No. 12C; C47-C51; <a href="https://doi.org/10.1088/0268-1242/6/12C/010">10.1088/0268-1242/6/12C/010</a></li>
<li>Yu, E. T. and Phillips, M. C., el al. (1991) <a href="https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb91">Measurement of the CdSe/ZnTe valence band offset by x-ray photoelectron spectroscopy</a>; Journal of Vacuum Science and Technology B; Vol. 9; No. 4; 2233-2237; <a href="https://doi.org/10.1116/1.585726">10.1116/1.585726</a></li>
<li>Croke, E. T. and Hauenstein, R. J., el al. (1991) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120418-154233164">Observation of a (2X8) surface reconstruction on Si_(1-x)Ge_x alloys grown on (100) Si by molecular beam epitaxy</a>; Journal of Vacuum Science and Technology B; Vol. 9; No. 4; 2301-2306; <a href="https://doi.org/10.1116/1.585737">10.1116/1.585737</a></li>
<li>Ting, D. Z.-Y. and Yu, E. T., el al. (1991) <a href="https://resolver.caltech.edu/CaltechAUTHORS:TINjvstb91">Band structure effects in interband tunnel devices</a>; Journal of Vacuum Science and Technology B; Vol. 9; No. 4; 2405-2410; <a href="https://doi.org/10.1116/1.585711">10.1116/1.585711</a></li>
<li>Chow, D. H. and Söderström, J. R., el al. (1990) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20180725-160851861">Novel InAs/GaSb/AlSb tunnel structures</a>; ISBN 9780819403346; Quantum Well and Superlattice Physics III; 2-13; <a href="https://doi.org/10.1117/12.20765">10.1117/12.20765</a></li>
<li>Collins, D. A. and Yu, E. T., el al. (1990) <a href="https://resolver.caltech.edu/CaltechAUTHORS:COLapl90">Experimental observation of negative differential resistance from an InAs/GaSb interface</a>; Applied Physics Letters; Vol. 57; No. 7; 683-685; <a href="https://doi.org/10.1063/1.103591">10.1063/1.103591</a></li>
<li>Söderström, J. R. and Yu, E. T., el al. (1990) <a href="https://resolver.caltech.edu/CaltechAUTHORS:SODjap90">Two-band modeling of narrow band gap and interband tunneling devices</a>; Journal of Applied Physics; Vol. 68; No. 3; 1372-1375; <a href="https://doi.org/10.1063/1.346688">10.1063/1.346688</a></li>
<li>Chow, D. H. and Miles, R. H., el al. (1990) <a href="https://resolver.caltech.edu/CaltechAUTHORS:CHOjvstb90">lnAs/Ga_(1-x) ln_xSb strained-layer superlattices grown by molecular-beam epitaxy</a>; Journal of Vacuum Science and Technology B; Vol. 8; No. 4; 710-714; <a href="https://doi.org/10.1116/1.584985">10.1116/1.584985</a></li>
<li>Ting, D. Z.-Y. and Yu, E. T., el al. (1990) <a href="https://resolver.caltech.edu/CaltechAUTHORS:TINjvstb90">Modeling of novel heterojunction tunnel structures</a>; Journal of Vacuum Science and Technology B; Vol. 8; No. 4; 810-816; <a href="https://doi.org/10.1116/1.584971">10.1116/1.584971</a></li>
<li>Rajakarunanayake, Y. and McGill, T. C. (1990) <a href="https://resolver.caltech.edu/CaltechAUTHORS:RAJjvstb90">Intersubband absorption in Si1–xGex/Si superlattices for long wavelength infrared detectors</a>; Journal of Vacuum Science and Technology B; Vol. 8; No. 4; 929-935; <a href="https://doi.org/10.1116/1.584945">10.1116/1.584945</a></li>
<li>Yu, E. T. and Croke, E. T., el al. (1990) <a href="https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb90">Measurement of the valence band offset in novel heterojunction systems: Si/Ge (100) and AlSb/ZnTe (100)</a>; Journal of Vacuum Science and Technology B; Vol. 8; No. 4; 908-915; <a href="https://doi.org/10.1116/1.584941">10.1116/1.584941</a></li>
<li>Kurtin, Stephen and McGill, T. C., el al. (1990) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20210127-142447762">Fundamental transition in the electronic nature of solids</a>; ISBN 978-94-010-6780-5; Electronic Structure of Metal-Semiconductor Contacts; 91-94; <a href="https://doi.org/10.1007/978-94-009-0657-0_10">10.1007/978-94-009-0657-0_10</a></li>
<li>Söderström, J. R. and Chow, D. H., el al. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:SODjap89">Observation of large peak-to-valley current ratios and large peak current densities in AlSb/InAs/AlSb double-barrier tunnel structures</a>; Journal of Applied Physics; Vol. 66; No. 10; 5106-5108; <a href="https://doi.org/10.1063/1.343742">10.1063/1.343742</a></li>
<li>Wu, G. Y. and McGill, T. C. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:WUGprb89b">Effects of barrier phonons on the tunneling current in a double-barrier structure</a>; Physical Review B; Vol. 40; No. 14; 9969-9972; <a href="https://doi.org/10.1103/PhysRevB.40.9969">10.1103/PhysRevB.40.9969</a></li>
<li>Rajakarunanayake, Y. and McGill, T. C. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:RAJapl89b">Si-Si1−xGex n-type resonant tunnel structures</a>; Applied Physics Letters; Vol. 55; No. 15; 1537-1539; <a href="https://doi.org/10.1063/1.102238">10.1063/1.102238</a></li>
<li>Söderström, J. R. and Chow, D. H., el al. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:SODapl89b">Demonstration of large peak-to-valley current ratios in InAs/AlGaSb/InAs single-barrier heterostructures</a>; Applied Physics Letters; Vol. 55; No. 13; 1348-1350; <a href="https://doi.org/10.1063/1.101595">10.1063/1.101595</a></li>
<li>Rajakarunanayake, Y. and Cole, B. H., el al. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:RAJapl89">Growth and characterization of ZnTe films grown on GaAs, InAs, GaSb, and ZnTe</a>; Applied Physics Letters; Vol. 55; No. 12; 1217-1219; <a href="https://doi.org/10.1063/1.101659">10.1063/1.101659</a></li>
<li>Söderström, J. R. and Chow, D. H., el al. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:SODapl89a">New negative differential resistance device based on resonant interband tunneling</a>; Applied Physics Letters; Vol. 55; No. 11; 1094-1096; <a href="https://doi.org/10.1063/1.101715">10.1063/1.101715</a></li>
<li>Yu, E. T. and Jackson, M. K., el al. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:YUEapl89">Hole tunneling times in GaAs/AlAs double-barrier structures</a>; Applied Physics Letters; Vol. 55; No. 8; 744-746; <a href="https://doi.org/10.1063/1.101793">10.1063/1.101793</a></li>
<li>Jackson, M. K. and Miles, R. H., el al. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:JACapl89b">Raman scattering determination of strain in CdTe/ZnTe superlattices</a>; Applied Physics Letters; Vol. 55; No. 8; 786-788; <a href="https://doi.org/10.1063/1.101781">10.1063/1.101781</a></li>
<li>Rajakarunanayake, Y. and McGill, T. C. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:RAJprb89">Band structure and optical properties of Si-Si1-xGex superlattices</a>; Physical Review B; Vol. 40; No. 5; 3051-3059; <a href="https://doi.org/10.1103/PhysRevB.40.3051">10.1103/PhysRevB.40.3051</a></li>
<li>Rajakarunanayake, Y. F. and McGill, T. C. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:RAJjvstb89">Strain effects and optical properties of Si1–xGex/Si superlattices</a>; Journal of Vacuum Science and Technology B; Vol. 7; No. 4; 799-803; <a href="https://doi.org/10.1116/1.584603">10.1116/1.584603</a></li>
<li>Johnson, M. B. and McGill, T. C., el al. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:JOHjap89">Space- and time-resolved photoluminescence of In-alloyed GaAs using photoluminescence excitation correlation spectroscopy</a>; Journal of Applied Physics; Vol. 66; No. 2; 838-844; <a href="https://doi.org/10.1063/1.343506">10.1063/1.343506</a></li>
<li>Miles, R. H. and McGill, T. C. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120524-102445268">Structural perfection in poorly lattice matched heterostructures</a>; Journal of Vacuum Science and Technology B; Vol. 7; No. 4; 753-757; <a href="https://doi.org/10.1116/1.584639">10.1116/1.584639</a></li>
<li>Ting, D. Z.-Y. and McGill, T. C. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:TINjvstb89">X-point tunneling in AlAs–GaAs–AlAs double barrier heterostructures</a>; Journal of Vacuum Science and Technology B; Vol. 7; No. 4; 1031-1034; <a href="https://doi.org/10.1116/1.584796">10.1116/1.584796</a></li>
<li>Hauenstein, R. J. and Clemens, B. M., el al. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:HAUjvstb89">Strain relaxation kinetics in Si1–xGex/Si heterostructures</a>; Journal of Vacuum Science and Technology B; Vol. 7; No. 4; 767-774; <a href="https://doi.org/10.1116/1.584598">10.1116/1.584598</a></li>
<li>Johnson, M. B. and McGill, T. C., el al. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:JOHapl89b">Carrier lifetimes in ion-damaged GaAs</a>; Applied Physics Letters; Vol. 54; No. 24; 2424-2426; <a href="https://doi.org/10.1063/1.101096">10.1063/1.101096</a></li>
<li>Wu, G. Y. and McGill, T. C., el al. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:WUGprb89a">k⋅p theory of semiconductor superlattice electronic structure in an applied magnetic field</a>; Physical Review B; Vol. 39; No. 9; 6060-6070; <a href="https://doi.org/10.1103/PhysRevB.39.6060">10.1103/PhysRevB.39.6060</a></li>
<li>Yu, E. T. and Chow, D. H., el al. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb89">Commutativity of the GaAs/AlAs (100) band offset</a>; Journal of Vacuum Science and Technology B; Vol. 7; No. 2; 391-394; <a href="https://doi.org/10.1116/1.584758">10.1116/1.584758</a></li>
<li>Jackson, M. K. and Johnson, M. B., el al. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:JACapl89a">Electron tunneling time measured by photoluminescence excitation correlation spectroscopy</a>; Applied Physics Letters; Vol. 54; No. 6; 552-554; <a href="https://doi.org/10.1063/1.100928">10.1063/1.100928</a></li>
<li>Boudville, W. J. and McGill, T. C. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BOUprb89">Finite-size effects in two-dimensional continuum percolation</a>; Physical Review B; Vol. 39; No. 1; 369-374; <a href="https://doi.org/10.1103/PhysRevB.39.369">10.1103/PhysRevB.39.369</a></li>
<li>Chow, D. H. and McCaldin, J. O., el al. (1988) <a href="https://resolver.caltech.edu/CaltechAUTHORS:CHOapl88">Electrical determination of the valence-band discontinuity in HgTe-CdTe heterojunctions</a>; Applied Physics Letters; Vol. 51; No. 26; 2230-2232; <a href="https://doi.org/10.1063/1.98949">10.1063/1.98949</a></li>
<li>Rajakarunanayake, Y. and Miles, R. H., el al. (1988) <a href="https://resolver.caltech.edu/CaltechAUTHORS:RAJjvstb88">Band offset of the ZnSe–ZnTe superlattices: A fit to photoluminescence data by k·p theory</a>; Journal of Vacuum Science and Technology B; Vol. 6; No. 4; 1354-1359; <a href="https://doi.org/10.1116/1.584220">10.1116/1.584220</a></li>
<li>McCaldin, J. O. and McGill, T. C. (1988) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCCjvstb88">Proposal of a new visible light emitting structure: n-AlSb/p-ZnTe heterojunctions</a>; Journal of Vacuum Science and Technology B; Vol. 6; No. 4; 1360-1363; <a href="https://doi.org/10.1116/1.584221">10.1116/1.584221</a></li>
<li>Chow, D. H. and McCaldin, J. O., el al. (1988) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120601-092710911">Electrical studies of single-barrier Hg_(1-x)Cd_x Te heterostructures</a>; Journal of Vacuum Science and Technology A; Vol. 6; No. 4; 2614-2618; <a href="https://doi.org/10.1116/1.575517">10.1116/1.575517</a></li>
<li>Miles, R. H. and Chow, P. P., el al. (1988) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120607-134521339">Accommodation of lattice mismatch in Ge_(x)Si_(1−x)/Si superlattices</a>; Journal of Vacuum Science and Technology B; Vol. 6; No. 4; 1382-1385; <a href="https://doi.org/10.1116/1.584226">10.1116/1.584226</a></li>
<li>Rajakarunanayake, Y. and Miles, R. H., el al. (1988) <a href="https://resolver.caltech.edu/CaltechAUTHORS:RAJprb88">Band structure of ZnSe-ZnTe superlattices</a>; Physical Review B; Vol. 37; No. 17; 10212-10215; <a href="https://doi.org/10.1103/PhysRevB.37.10212">10.1103/PhysRevB.37.10212</a></li>
<li>Wu, G. Y. and McGill, T. C., el al. (1987) <a href="https://resolver.caltech.edu/CaltechAUTHORS:WUGjvsta87">Theoretical studies of electronic properties of semimagnetic superlattices in a magnetic field</a>; Journal of Vacuum Science and Technology B; Vol. 5; No. 5; 3096-3101; <a href="https://doi.org/10.1116/1.574224">10.1116/1.574224</a></li>
<li>Rajakarunanayake, Y. and McGill, T. C. (1987) <a href="https://resolver.caltech.edu/CaltechAUTHORS:RAJjvstb87">Self-consistent solutions of electronic wave functions at GaAs–AlxGa1–xAs interfaces</a>; Journal of Vacuum Science and Technology B; Vol. 5; No. 4; 1288-1294; <a href="https://doi.org/10.1116/1.583822">10.1116/1.583822</a></li>
<li>Miles, R. H. and McGill, T. C., el al. (1987) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120625-142036609">Structure of CdTe/ZnTe superlattices</a>; Journal of Vacuum Science and Technology B; Vol. 5; No. 4; 1263-1267; <a href="https://doi.org/10.1116/1.583816">10.1116/1.583816</a></li>
<li>Bauer, R. S. and Miles, R. H., el al. (1987) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20201104-193125750">Perspectives on formation and properties of semiconductor interfaces</a>; ISBN 9783642729690; Semiconductor Interfaces: Formation and Properties; 372-388; <a href="https://doi.org/10.1007/978-3-642-72967-6_28">10.1007/978-3-642-72967-6_28</a></li>
<li>Woodward, T. K. and McGill, T. C., el al. (1986) <a href="https://resolver.caltech.edu/CaltechAUTHORS:WOOjvstb86">Electrical behavior of GaAs–AlAs heterostructures</a>; Journal of Vacuum Science and Technology B; Vol. 4; No. 4; 1022-1027; <a href="https://doi.org/10.1116/1.583573">10.1116/1.583573</a></li>
<li>Baukus, J. P. and Hunter, A. T., el al. (1986) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BAUjvsta86">Infrared absorption measurement and analysis of HgTe–CdTe superlattices</a>; Journal of Vacuum Science and Technology A; Vol. 4; No. 4; 2110-2113; <a href="https://doi.org/10.1116/1.574037">10.1116/1.574037</a></li>
<li>McGill, T. C. and Wu, G. Y., el al. (1986) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCGjvsta86">Superlattices: Progress and prospects</a>; Journal of Vacuum Science and Technology A; Vol. 4; No. 4; 2091-2095; <a href="https://doi.org/10.1116/1.574033">10.1116/1.574033</a></li>
<li>Bonnefoi, A. R. and Chow, D. H., el al. (1986) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BONjvstb86">Current transport mechanisms in GaAs/AlAs tunnel structures grown by metal–organic chemical vapor deposition</a>; Journal of Vacuum Science and Technology B; Vol. 4; No. 4; 988-995; <a href="https://doi.org/10.1116/1.583503">10.1116/1.583503</a></li>
<li>Hauenstein, R. J. and Schlesinger, T. E., el al. (1986) <a href="https://resolver.caltech.edu/CaltechAUTHORS:HAUjvsta86">Schottky barrier height measurements of type-A and type-B NiSi2 epilayers on Si</a>; Journal of Vacuum Science and Technology A; Vol. 4; No. 3; 860-864; <a href="https://doi.org/10.1116/1.573796">10.1116/1.573796</a></li>
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<li>Bonnefoi, A. R. and McGill, T. C., el al. (1985) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20170719-172238067">Resonant tunneling transistors with controllable negative differential resistances</a>; IEEE Electron Device Letters; Vol. 6; No. 12; 636-638; <a href="https://doi.org/10.1109/EDL.1985.26258">10.1109/EDL.1985.26258</a></li>
<li>Boudville, W. J. and McGill, T. C. (1985) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BOUjvstb85">Ohmic contacts to n-type GaAs</a>; Journal of Vacuum Science and Technology B; Vol. 3; No. 4; 1192-1196; <a href="https://doi.org/10.1116/1.583038">10.1116/1.583038</a></li>
<li>Johnson, M. B. and Zur, A., el al. (1985) <a href="https://resolver.caltech.edu/CaltechAUTHORS:JOHjvstb85">Summary Abstract: Band offsets at HgTe CdTe interfaces</a>; Journal of Vacuum Science and Technology B; Vol. 3; No. 4; 1260; <a href="https://doi.org/10.1116/1.583008">10.1116/1.583008</a></li>
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<li>Zur, A. and McGill, T. C. (1985) <a href="https://resolver.caltech.edu/CaltechAUTHORS:ZURjvstb85">Theoretical investigation of the effect of strain on phase separation in epitaxial layers</a>; Journal of Vacuum Science and Technology B; Vol. 3; No. 4; 1055-1060; <a href="https://doi.org/10.1116/1.583095">10.1116/1.583095</a></li>
<li>Zur, A. and McGill, T. C., el al. (1985) <a href="https://resolver.caltech.edu/CaltechAUTHORS:ZURjap85">Transition-metal silicides lattice-matched to silicon</a>; Journal of Applied Physics; Vol. 57; No. 2; 600-603; <a href="https://doi.org/10.1063/1.334743">10.1063/1.334743</a></li>
<li>McGill, T. C. (1985) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20201001-145811592">Superlattices: New Semiconductor Materials</a>; ISBN 9781461576846; Proceedings of the 17th International Conference on the Physics of Semiconductors; 375-380; <a href="https://doi.org/10.1007/978-1-4615-7682-2_82">10.1007/978-1-4615-7682-2_82</a></li>
<li>Hetzler, S. R. and McGill, T. C., el al. (1985) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20201027-183158985">S-Like Excited States of the 78-meV Acceptor in GaAs</a>; ISBN 9781461576846; Proceedings of the 17th International Conference on the Physics of Semiconductors; 671-674; <a href="https://doi.org/10.1007/978-1-4615-7682-2_149">10.1007/978-1-4615-7682-2_149</a></li>
<li>Collins, R. T. and Bonnefoi, A. R., el al. (1985) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20201104-193125647">Inelastic and resonant tunneling in GaAs/AlAs heterostructures</a>; ISBN 9781461576846; Proceedings of the 17th International Conference on the Physics of Semiconductors; 437-440; <a href="https://doi.org/10.1007/978-1-4615-7682-2_97">10.1007/978-1-4615-7682-2_97</a></li>
<li>Collins, R. T. and Lambe, J., el al. (1984) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120629-140924862">Elastic and inelastic tunneling characteristics of AIAs/GaAs heterojunctions</a>; Journal of Vacuum Science and Technology B; Vol. 2; No. 3; 597-598; <a href="https://doi.org/10.1116/1.582845">10.1116/1.582845</a></li>
<li>Mailhiot, C. and McGill, T. C., el al. (1984) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MAIjvstb84">New approach to the k·p theory of semiconductor superlattices</a>; Journal of Vacuum Science and Technology B; Vol. 2; No. 3; 371-375; <a href="https://doi.org/10.1116/1.582826">10.1116/1.582826</a></li>
<li>Zur, A. and McGill, T. C. (1984) <a href="https://resolver.caltech.edu/CaltechAUTHORS:ZURjvstb84">Band offsets, defects, and dipole layers in semiconductor heterojunctions</a>; Journal of Vacuum Science and Technology B; Vol. 2; No. 3; 440-444; <a href="https://doi.org/10.1116/1.582891">10.1116/1.582891</a></li>
<li>Collins, R. T. and Lambe, J., el al. (1984) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120629-144901442">Inelastic tunneling characteristics of AIAs/GaAs heterojunction barriers</a>; Journal of Vacuum Science and Technology B; Vol. 2; No. 2; 201-202; <a href="https://doi.org/10.1116/1.582779">10.1116/1.582779</a></li>
<li>Smith, D. L. and McGill, T. C. (1984) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20200318-154418910">HgTe-CdTe Superlattices</a>; Journal de Physique Colloques; Vol. 45; No. C5; 509-513; <a href="https://doi.org/10.1051/jphyscol:1984575">10.1051/jphyscol:1984575</a></li>
<li>Zur, A. and McGill, T. C. (1984) <a href="https://resolver.caltech.edu/CaltechAUTHORS:ZURjap84">Lattice match: An application to heteroepitaxy</a>; Journal of Applied Physics; Vol. 55; No. 2; 378-386; <a href="https://doi.org/10.1063/1.333084">10.1063/1.333084</a></li>
<li>Prabhakar, A. and McGill, T. C., el al. (1983) <a href="https://resolver.caltech.edu/CaltechAUTHORS:PRAapl83">Platinum diffusion into silicon from PtSi</a>; Applied Physics Letters; Vol. 43; No. 12; 1118-1120; <a href="https://doi.org/10.1063/1.94247">10.1063/1.94247</a></li>
<li>Zur, A. and McGill, T. C., el al. (1983) <a href="https://resolver.caltech.edu/CaltechAUTHORS:ZURprb83">Fermi-level position at a semiconductor-metal interface</a>; Physical Review B; Vol. 28; No. 4; 2060-2067; <a href="https://doi.org/10.1103/PhysRevB.28.2060">10.1103/PhysRevB.28.2060</a></li>
<li>Collins, R. T. and McGill, T. C. (1983) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120709-104756094">Electronic properties of deep levels in p‐type CdTe</a>; Journal of Vacuum Science and Technology A; Vol. 1; No. 3; 1633-1636; <a href="https://doi.org/10.1116/1.572245">10.1116/1.572245</a></li>
<li>Mailhiot, C. and Smith, D. L., el al. (1983) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120712-124524007">Transport characteristics of L-point and Г-point electrons through GaAs-Ga_(1-x)Ai_xAs-GaAs(111} double heterojunctions</a>; Journal of Vacuum Science and Technology B; Vol. 1; No. 3; 637-642; <a href="https://doi.org/10.1116/1.582568">10.1116/1.582568</a></li>
<li>Zur, A. and McGill, T. C., el al. (1983) <a href="https://resolver.caltech.edu/CaltechAUTHORS:ZURjvstb83">Summary Abstract: The effect of doping on Fermi level position at a semiconductor–metal interface</a>; Journal of Vacuum Science and Technology B; Vol. 1; No. 3; 608-609; <a href="https://doi.org/10.1116/1.582607">10.1116/1.582607</a></li>
<li>Mailhiot, C. and McGill, T. C., el al. (1983) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120713-072654967">Tunneling and propagating transport in GaAs-Ga_(1-x)Al_xAs-GaAs(100) double heterojunctions</a>; Journal of Vacuum Science and Technology B; Vol. 1; No. 2; 439-444; <a href="https://doi.org/10.1116/1.582622">10.1116/1.582622</a></li>
<li>McGill, T. C. and Smith, D. L. (1983) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCGjvstb83">Summary Abstract: HgTe–CdTe superlattices</a>; Journal of Vacuum Science and Technology B; Vol. 1; No. 2; 260-261; <a href="https://doi.org/10.1116/1.582498">10.1116/1.582498</a></li>
<li>McGill, T. C. and Collins, D. A. (1983) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCGsst93">Prospects for the future of narrow bandgap materials</a>; Semiconductor Science and Technology; Vol. 8; No. 1S; S1-S5; <a href="https://doi.org/10.1088/0268-1242/8/1S/001">10.1088/0268-1242/8/1S/001</a></li>
<li>Mailhiot, C. and Chang, Yia-Chung, el al. (1982) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120717-092705520">Energy spectra of donors in GaAs-Ga_(1-x)Al_(x)As quantum well structures in the effective mass approximation</a>; Journal of Vacuum Science and Technology; Vol. 21; No. 2; 519-523; <a href="https://doi.org/10.1116/1.571751">10.1116/1.571751</a></li>
<li>Redondo, Antonio and Goddard, William A., III, el al. (1982) <a href="https://resolver.caltech.edu/CaltechAUTHORS:REDjvst82c">Summary Abstract: Mott insulator model of the Si(111)-(2×1) surface</a>; Journal of Vacuum Science and Technology; Vol. 21; No. 2; 328-329; <a href="https://doi.org/10.1116/1.571772">10.1116/1.571772</a></li>
<li>Redondo, Antonio and Goddard, William A., III, el al. (1982) <a href="https://resolver.caltech.edu/CaltechAUTHORS:REDjvst82a">Mott insulator model of the Si(111)–(2×1) surface</a>; Journal of Vacuum Science and Technology; Vol. 21; No. 2; 649-654; <a href="https://doi.org/10.1116/1.571806">10.1116/1.571806</a></li>
<li>Collins, R. T. and Kuech, T. F., el al. (1982) <a href="https://resolver.caltech.edu/CaltechAUTHORS:COLjvst82">A DLTS study of deep levels in n-type CdTe</a>; Journal of Vacuum Science and Technology; Vol. 21; No. 1; 191-194; <a href="https://doi.org/10.1116/1.571710">10.1116/1.571710</a></li>
<li>Swarts, C. A. and Daw, M. S., el al. (1982) <a href="https://resolver.caltech.edu/CaltechAUTHORS:SWAjvst82">Bulk vacancies in CdxHg1–xTe</a>; Journal of Vacuum Science and Technology; Vol. 21; No. 1; 198-200; <a href="https://doi.org/10.1116/1.571712">10.1116/1.571712</a></li>
<li>Hunter, A. T. and McGill, T. C. (1982) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120629-111127036">Luminescence studies of HgCdTe alloys</a>; Journal of Vacuum Science and Technology; Vol. 21; No. 1; 205-207; <a href="https://doi.org/10.1116/1.571716">10.1116/1.571716</a></li>
<li>Hunter, A. T. and McGill, T. C. (1982) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20180702-104349415">Selective excitation luminescence in bulk-grown GaAs</a>; Applied Physics Letters; Vol. 40; No. 2; 169-171; <a href="https://doi.org/10.1063/1.93031">10.1063/1.93031</a></li>
<li>Redondo, A. and Goddard, W. A., III, el al. (1981) <a href="https://resolver.caltech.edu/CaltechAUTHORS:REDprb81">Electronic structure of steps on silicon (111) surfaces from theoretical studies of finite clusters</a>; Physical Review B; Vol. 24; No. 10; 6135-6138; <a href="https://doi.org/10.1103/PhysRevB.24.6135">10.1103/PhysRevB.24.6135</a></li>
<li>Daw, M. S. and Smith, D. L., el al. (1981) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120718-104550766">Surface core excitons in III-V semiconductors</a>; Journal of Vacuum Science and Technology; Vol. 19; No. 3; 388-389; <a href="https://doi.org/10.1116/1.571069">10.1116/1.571069</a></li>
<li>Redondo, A. and Goddard, W. A., III, el al. (1981) <a href="https://resolver.caltech.edu/CaltechAUTHORS:REDjvst81a">Oxidation of silicon surfaces</a>; Journal of Vacuum Science and Technology; Vol. 19; No. 3; 498-501; <a href="https://doi.org/10.1116/1.571046">10.1116/1.571046</a></li>
<li>Swarts, C. A. and Goddard, W. A., III, el al. (1981) <a href="https://resolver.caltech.edu/CaltechAUTHORS:SWAjvst81b">Core to surface excitations on GaAs(110)</a>; Journal of Vacuum Science and Technology; Vol. 19; No. 3; 360-366; <a href="https://doi.org/10.1116/1.571064">10.1116/1.571064</a></li>
<li>Daw, M. S. and Smith, D. L., el al. (1981) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120717-163206505">Surface vacancies in II-VI and III-V zinc blende
semiconductors</a>; Journal of Vacuum Science and Technology; Vol. 19; No. 3; 508-512; <a href="https://doi.org/10.1116/1.571048">10.1116/1.571048</a></li>
<li>Swarts, C. A. and Goddard, W. A., III, el al. (1981) <a href="https://resolver.caltech.edu/CaltechAUTHORS:SWAjvst81a">Geometry of the abrupt (110) Ge/GaAs interface</a>; Journal of Vacuum Science and Technology; Vol. 19; No. 3; 551-555; <a href="https://doi.org/10.1116/1.571124">10.1116/1.571124</a></li>
<li>Swarts, C. A. and Goddard, W. A., III, el al. (1980) <a href="https://resolver.caltech.edu/CaltechAUTHORS:SWAjvst80a">Theoretical studies of the reconstruction of the (110) surface of III–V and II–VI semiconductor compounds</a>; Journal of Vacuum Science and Technology; Vol. 17; No. 5; 982-986; <a href="https://doi.org/10.1116/1.570652">10.1116/1.570652</a></li>
<li>Swarts, C. A. and Barton, J. J., el al. (1980) <a href="https://resolver.caltech.edu/CaltechAUTHORS:SWAjvst80b">Chemisorption of Al and Ga on the GaAs (110) surface</a>; Journal of Vacuum Science and Technology; Vol. 17; No. 5; 869-873; <a href="https://doi.org/10.1116/1.570607">10.1116/1.570607</a></li>
<li>Schulman, J. N. and McGill, T. C. (1980) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120719-094821500">Localization of superlattice electronic states and complex bulk band structures</a>; Journal of Vacuum Science and Technology; Vol. 17; No. 5; 1118-1119; <a href="https://doi.org/10.1116/1.570625">10.1116/1.570625</a></li>
<li>McCaldin, J. O. and McGill­, T. C. (1980) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCCarms80">The metal-semiconductor interface</a>; Annual Review of Materials Science; Vol. 10; 65-83; <a href="https://doi.org/10.1146/annurev.ms.10.080180.000433">10.1146/annurev.ms.10.080180.000433</a></li>
<li>Hunter, A. T. and Smith, D. L., el al. (1980) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20180702-153655592">Near-band‐gap photoluminescence of Hg_(1−x)Cd_xTe</a>; Applied Physics Letters; Vol. 37; No. 2; 200-203; <a href="https://doi.org/10.1063/1.91824">10.1063/1.91824</a></li>
<li>Barton, John J. and Swarts, Coenraad A., el al. (1980) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BARjvst80">Chemisorption of oxygen and aluminum on the GaAs (110) surface from ab initio theory</a>; Journal of Vacuum Science and Technology; Vol. 17; No. 1; 164-168; <a href="https://doi.org/10.1116/1.570462">10.1116/1.570462</a></li>
<li>Hunter, A. T. and Lyon, S. A., el al. (1979) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20180702-101720986">Transient decay of satellite lines of bound excitons in Si: P</a>; Physical Review B; Vol. 20; No. 6; 2431-2437; <a href="https://doi.org/10.1103/PhysRevB.20.2431">10.1103/PhysRevB.20.2431</a></li>
<li>Schulman, J. N. and McGill, T. C. (1979) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120727-094904581">Ideal CdTe/HgTe superlattices</a>; Journal of Vacuum Science and Technology; Vol. 16; No. 5; 1513-1516; <a href="https://doi.org/10.1116/1.570237">10.1116/1.570237</a></li>
<li>Barton, John J. and Goddard, William A., III, el al. (1979) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BARjvst79">Reconstruction and oxidation of the GaAs(110) surface</a>; Journal of Vacuum Science and Technology; Vol. 16; No. 5; 1178-1185; <a href="https://doi.org/10.1116/1.570186">10.1116/1.570186</a></li>
<li>Goddard, William A., III and McGill, T. C. (1979) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120725-155350864">Study of surfaces and interfaces using quantum chemistry techniques</a>; Journal of Vacuum Science and Technology; Vol. 16; No. 5; 1308-1317; <a href="https://doi.org/10.1116/1.570148">10.1116/1.570148</a></li>
<li>Goddard, William A., III and Barton, John J., el al. (1978) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120727-154434637">Theoretical studies of Si and GaAs surfaces and initial steps in the oxidation</a>; Journal of Vacuum Science and Technology; Vol. 15; No. 4; 1274-1286; <a href="https://doi.org/10.1116/1.569753">10.1116/1.569753</a></li>
<li>Schulman, J. N. and McGill, T. C. (1978) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120802-073722417">Tight‐binding calculation for the AlAs–GaAs (100) interface</a>; Journal of Vacuum Science and Technology; Vol. 15; No. 4; 1456-1458; <a href="https://doi.org/10.1116/1.569807">10.1116/1.569807</a></li>
<li>Chen, M. and Lyon, S. A., el al. (1977) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20221004-680171300.29">Transients of the photoluminescence from EHD in doped and undoped Ge</a>; Il Nuovo Cimento B; Vol. 39; No. 2; 622-627; <a href="https://doi.org/10.1007/bf02725801">10.1007/bf02725801</a></li>
<li>Best, J. S. and McCaldin, J. O., el al. (1976) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BESapl76">HgSe, a highly electronegative stable metallic contact for semiconductor devices</a>; Applied Physics Letters; Vol. 29; No. 7; 433-434; <a href="https://doi.org/10.1063/1.89109">10.1063/1.89109</a></li>
<li>Mead, C. A. and McGill, T. C. (1976) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20141217-152744175">Schottky barrier heights on p-type diamond and silicon carbide (6h)</a>; Physics Letters A; Vol. 58; No. 4; 249-251; <a href="https://doi.org/10.1016/0375-9601(76)90088-8">10.1016/0375-9601(76)90088-8</a></li>
<li>Scranton, R. A. and Mooney, J. B., el al. (1976) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120808-132551604">Highly electronegative metallic contacts to semiconductors using polymeric sulfur nitride</a>; Applied Physics Letters; Vol. 29; No. 1; 47-48; <a href="https://doi.org/10.1063/1.88868">10.1063/1.88868</a></li>
<li>McCaldin, J. O. and McGill, T. C., el al. (1976) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCCjvst76">Schottky barriers on compound semiconductors: The role of the anion</a>; Journal of Vacuum Science and Technology; Vol. 13; No. 4; 802-806; <a href="https://doi.org/10.1116/1.568993">10.1116/1.568993</a></li>
<li>McCaldin, J. O. and McGill, T. C., el al. (1976) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCCprl76">Correlation for III-V and II-VI Semiconductors of the Au Schottky Barrier Energy with Anion Electronegativity</a>; Physical Review Letters; Vol. 36; No. 1; 56-58; <a href="https://doi.org/10.1103/PhysRevLett.36.56">10.1103/PhysRevLett.36.56</a></li>
<li>Hammond, R. B. and Smith, D. L., el al. (1975) <a href="https://resolver.caltech.edu/CaltechAUTHORS:HAMprl75">Temperature dependence of silicon luminescence due to splitting of the indirect ground state</a>; Physical Review Letters; Vol. 35; No. 22; 1535-1538; <a href="https://doi.org/10.1103/PhysRevLett.35.1535">10.1103/PhysRevLett.35.1535</a></li>
<li>Smith, D. L. and Pan, D. S., el al. (1975) <a href="https://resolver.caltech.edu/CaltechAUTHORS:SMIprb75">Impact ionization of excitons in Ge and Si</a>; Physical Review B; Vol. 12; No. 10; 4360-4366; <a href="https://doi.org/10.1103/PhysRevB.12.4360">10.1103/PhysRevB.12.4360</a></li>
<li>McGill, T. C. and Baron, R. (1975) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCGprb75">Neutral impurity scattering in semiconductors</a>; Physical Review B; Vol. 11; No. 12; 5208-5210; <a href="https://doi.org/10.1103/PhysRevB.11.5208">10.1103/PhysRevB.11.5208</a></li>
<li>Lee, T. F. and Pashley, R. D., el al. (1975) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120810-105957103">Investigation of tellurium-implanted silicon</a>; Journal of Applied Physics; Vol. 46; No. 1; 381-388; <a href="https://doi.org/10.1063/1.321347">10.1063/1.321347</a></li>
<li>Lee, T. F. and McGill, T. C. (1975) <a href="https://resolver.caltech.edu/CaltechAUTHORS:LEEjap75a">Variation of impurity–to–band activation energies with impurity density</a>; Journal of Applied Physics; Vol. 46; No. 1; 373-380; <a href="https://doi.org/10.1063/1.321346">10.1063/1.321346</a></li>
<li>Chen, M. and Hass, M., el al. (1975) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20180830-105819420">Multiphonon Absorption in the Alkaline Earth Fluorides</a>; ISBN 978-1-4684-2180-4; Optical Properties of Highly Transparent Solids; 99-107; <a href="https://doi.org/10.1007/978-1-4684-2178-1_8">10.1007/978-1-4684-2178-1_8</a></li>
<li>McGill, T. C. (1975) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20180830-105120440">Theory of Multiphonon Absorption: A Review</a>; ISBN 978-1-4684-2180-4; Optical Properties of Highly Transparent Solids; 3-19; <a href="https://doi.org/10.1007/978-1-4684-2178-1_1">10.1007/978-1-4684-2178-1_1</a></li>
<li>McGill, T. C. (1974) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCGjvst74a">Phenomenology of metal-semiconductor electrical barriers</a>; Journal of Vacuum Science and Technology; Vol. 11; No. 6; 935-942; <a href="https://doi.org/10.1116/1.1318709">10.1116/1.1318709</a></li>
<li>Daimon, Yoshiaki and Mohsen, Amr M., el al. (1974) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20170809-145049065">Final stage of the charge-transfer process in charge-coupled devices</a>; IEEE Transactions on Electron Devices; Vol. 21; No. 4; 266-272; <a href="https://doi.org/10.1109/T-ED.1974.17908">10.1109/T-ED.1974.17908</a></li>
<li>Daimon, Yoshiaki and Mohsen, Amr M., el al. (1974) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20170809-150823368">Charge transfer in buried-channel charge-coupled devices</a>; <a href="https://doi.org/10.1109/ISSCC.1974.1155317">10.1109/ISSCC.1974.1155317</a></li>
<li>Silver, R. N. and McGill, T. C. (1974) <a href="https://resolver.caltech.edu/CaltechAUTHORS:SILprb74">Spin-excitation spectra and resistance minima in amorphous ferromagnetic alloys</a>; Physical Review B; Vol. 9; No. 1; 272-280; <a href="https://doi.org/10.1103/PhysRevB.9.272">10.1103/PhysRevB.9.272</a></li>
<li>McGill, T. C. and Mead, C. A. (1974) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCGjvst84b">Electrical interface barriers</a>; Journal of Vacuum Science and Technology; Vol. 11; No. 1; 122-127; <a href="https://doi.org/10.1116/1.1318540">10.1116/1.1318540</a></li>
<li>Lee, T. F. and McGill, T. C. (1973) <a href="https://resolver.caltech.edu/CaltechAUTHORS:LEEjpc73">Semiempirical calculation of deep levels: divacancy in Si</a>; Journal of Physics C: Solid State Physics; Vol. 6; No. 23; 3438-3450; <a href="https://doi.org/10.1088/0022-3719/6/23/017">10.1088/0022-3719/6/23/017</a></li>
<li>Marrello, V. and Lee, T. F., el al. (1973) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MARprl73">Condensation of Injected Electrons and Holes in Germanium</a>; Physical Review Letters; Vol. 31; No. 9; 593-594; <a href="https://doi.org/10.1103/PhysRevLett.31.593">10.1103/PhysRevLett.31.593</a></li>
<li>Mohsen, A. M. and Bower, R., el al. (1973) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20170809-154939939">Overlapping-gate buried-channel charge-coupled devices</a>; Electronics Letters; Vol. 9; No. 17; 396-398; <a href="https://doi.org/10.1049/el:19730293">10.1049/el:19730293</a></li>
<li>Mohsen, Amr M. and McGill, T. C., el al. (1973) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150113-165257060">Charge transfer in overlapping gate charge-coupled devices</a>; IEEE Journal of Solid-State Circuits; Vol. 8; No. 3; 191-207; <a href="https://doi.org/10.1109/JSSC.1973.1050376">10.1109/JSSC.1973.1050376</a></li>
<li>Mohsen, Amr M. and McGill, T. C., el al. (1973) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150113-162610060">The influence of interface states on incomplete charge transfer in overlapping gate charge-coupled devices</a>; IEEE Journal of Solid-State Circuits; Vol. 8; No. 2; 125-138; <a href="https://doi.org/10.1109/JSSC.1973.1050361">10.1109/JSSC.1973.1050361</a></li>
<li>Mohsen, A. M. and McGill, T. C., el al. (1973) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MOHapl73">Push clocks: a new approach to charge-coupled devices clocking</a>; Applied Physics Letters; Vol. 22; No. 4; 172-175; <a href="https://doi.org/10.1063/1.1654600">10.1063/1.1654600</a></li>
<li>McGill, T. C. (1972) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCGprb72b">Evaluation of the Third Moment of the Imaginary Part of the Dielectric Constant</a>; Physical Review B; Vol. 6; No. 6; 2493-2495; <a href="https://doi.org/10.1103/PhysRevB.6.2493">10.1103/PhysRevB.6.2493</a></li>
<li>McGill, T. C. and Klima, J. (1972) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCGprb72a">Short-Range Order and Pseudogaps in Elemental Amorphous Covalent Semiconductors</a>; Physical Review B; Vol. 5; No. 4; 1517-1528; <a href="https://doi.org/10.1103/PhysRevB.5.1517">10.1103/PhysRevB.5.1517</a></li>
<li>Mohsen, A. M. and McGill, T. C., el al. (1972) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150114-110748689">Charge transfer in charge-coupled devices</a>; <a href="https://doi.org/10.1109/ISSCC.1972.1155057">10.1109/ISSCC.1972.1155057</a></li>
<li>Kurtin, S. L. and McGill, T. C., el al. (1971) <a href="https://resolver.caltech.edu/CaltechAUTHORS:KURprb71">Direct interelectrode tunneling in GaSe</a>; Physical Review B; Vol. 3; No. 10; 3368-3379; <a href="https://doi.org/10.1103/PhysRevB.3.3368">10.1103/PhysRevB.3.3368</a></li>
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