McGill, Thomas C.

Article from CaltechAUTHORS

• Cartoixà, X. and Ting, D. Z.-Y., et el. (2003) Description of bulk inversion asymmetry in the effective-bond-orbital model; Physical Review B; Vol. 68; No. 23; Art. No. 235319; 10.1103/PhysRevB.68.235319
• Strittmatter, R. P. and Beach, R. A., et el. (2003) Piezoelectrically enhanced capacitive strain sensors using GaN metal-insulator-semiconductor diodes; Journal of Applied Physics; Vol. 94; No. 9; 5958-5963; 10.1063/1.1611267
• Preisler, E. J. and Brooke, J., et el. (2003) Pulsed laser deposition growth of Fe3O4 on III–V semiconductors for spin injection; Journal of Vacuum Science and Technology B; Vol. 21; No. 4; 1745-1748; 10.1116/1.1588648
• Cartoixà, X. and Ting, D. Z.-Y., et el. (2003) An efficient multiband envelope function approximation method for spintronics; Nanotechnology; Vol. 14; No. 2; 308-311; 10.1088/0957-4484/14/2/340
• Cartoixà, X. and Ting, D. Z.-Y., et el. (2002) Theoretical Investigations of Spin Splittings and Optimization of the Rashba Coefficient in Asymmetric AlSb/InAs/GaSb Heterostructures; Journal of Computational Electronics; Vol. 1; No. 1-2; 141-146; 10.1023/a:1020796618175
• Ting, D. Z.-Y. and Cartoixà, X., et el. (2002) Modeling Spin-Dependent Transport in InAs/GaSb/AlSb Resonant Tunneling Structures; Journal of Computational Electronics; Vol. 1; No. 1-2; 147-151; 10.1023/a:1020748702245
• Oldham, N. C. and Hill, C. J., et el. (2002) Deposition of Ga2O3–x ultrathin films on GaAs by e-beam evaporation; Journal of Vacuum Science and Technology A; Vol. 20; No. 3; 809-813; 10.1116/1.1469011
• Preisler, E. J. and Marsh, O. J., et el. (2001) Stability of cerium oxide on silicon studied by x-ray photoelectron spectroscopy; Journal of Vacuum Science and Technology B; Vol. 19; No. 4; 1611-1618; 10.1116/1.1387464
• Cheng, X.-C. and Cartoixà, X., et el. (2000) Tunnel switch diode based on AlSb/GaSb heterojunctions; Journal of Applied Physics; Vol. 88; No. 11; 6948-6950; 10.1063/1.1317236
• Hill, C. J. and Beach, R. A., et el. (2000) Nickel layers on indium arsenide; Journal of Vacuum Science and Technology B; Vol. 18; No. 4; 2044-2046; 10.1116/1.1306283
• Alonzo, A. C. and Cheng, X.-C., et el. (2000) Strain in wet thermally oxidized square and circular mesas; Journal of Applied Physics; Vol. 87; No. 9; 4594-4599; 10.1063/1.373108
• Hill, C. J. and Bridger, P. M., et el. (1999) Scanning apertureless microscopy below the diffraction limit: Comparisons between theory and experiment; Applied Physics Letters; Vol. 75; No. 25; 4022-4024; 10.1063/1.125525
• Cheng, X.-C. and McGill, T. C. (1999) Near infrared avalanche photodiodes with bulk Al0.04Ga0.96Sb and GaSb/AlSb superlattice gain layers; Journal of Applied Physics; Vol. 86; No. 8; 4576-4579; 10.1063/1.371405
• Jones, J. T. and Bridger, P. M., et el. (1999) Charge storage in CeO2/Si/CeO2/Si(111) structures by electrostatic force microscopy; Applied Physics Letters; Vol. 75; No. 9; 1326-1328; 10.1063/1.124682
• Beach, R. A. and McGill, T. C. (1999) Piezoelectric fields in nitride devices; Journal of Vacuum Science and Technology B; Vol. 17; No. 4; 1753-1756; 10.1116/1.590820
• Bridger, P. M. and Bandić, Z. Z., et el. (1999) Electric force microscopy of induced charges and surface potentials in GaN modified by light and strain; Journal of Vacuum Science and Technology B; Vol. 17; No. 4; 1750-1752; 10.1116/1.590819
• Bridger, P. M. and Bandić, Z. Z., et el. (1999) Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy; Applied Physics Letters; Vol. 74; No. 23; 3522-3524; 10.1063/1.124148
• Piquette, E. C. and Bridger, P. M., et el. (1999) Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphire; Journal of Vacuum Science and Technology B; Vol. 17; No. 3; 1241-1245; 10.1116/1.590730
• Bandić, Z. Z. and Bridger, P. M., et el. (1999) High voltage (450 V) GaN Schottky rectifiers; Applied Physics Letters; Vol. 74; No. 9; 1266-1268; 10.1063/1.123520
• Beach, R. A. and Piquette, E. C., et el. (1999) XPS Study of Oxygen Adsorption on (3x3) Reconstructed MBE Grown GaN Surfaces; MRS Internet Journal of Nitride Semiconductor Research; Vol. 4; No. S1; Art. No. G6.26
• Piquette, E. C. and Bridger, P. M., et el. (1999) Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE; MRS Internet Journal of Nitride Semiconductor Research; Vol. 4S1; Art. No. G3.77
• Alonzo, A. C. and Cheng, X.-C., et el. (1998) Effect of cylindrical geometry on the wet thermal oxidation of AlAs; Journal of Applied Physics; Vol. 84; No. 12; 6901-6905; 10.1063/1.368987
• Bridger, P. M. and Bandić, Z. Z., et el. (1998) Correlation between the surface defect distribution and minority carrier transport properties in GaN; Applied Physics Letters; Vol. 73; No. 23; 3438-3440; 10.1063/1.122790
• Bandić, Z. Z. and Bridger, P. M., et el. (1998) Electron diffusion length and lifetime in p-type GaN; Applied Physics Letters; Vol. 73; No. 22; 3276-3278; 10.1063/1.122743
• Jones, J. T. and Croke, E. T., et el. (1998) Epitaxial silicon grown on CeO2/Si(111) structure by molecular beam epitaxy; Journal of Vacuum Science and Technology B; Vol. 16; No. 5; 2686-2689; 10.1116/1.590257
• Daniel, E. S. and Ting, D. Z.-Y., et el. (1998) Experimental and theoretical study of ultra-thin oxides; Semiconductor Science and Technology; Vol. 13; No. 8A; A155-A159; 10.1088/0268-1242/13/8A/044
• Cheng, X.-C. and McGill, T. C. (1998) Ballistic electron emission microscopy spectroscopy study of AlSb and InAs/AlSb superlattice barriers; Journal of Vacuum Science and Technology B; Vol. 16; No. 4; 2291-2295; 10.1116/1.590235
• Ting, D. Z.-Y. and McGill, T. C. (1998) Effects of interface roughness and conducting filaments in metal–oxide–semiconductor tunnel structures; Journal of Vacuum Science and Technology B; Vol. 16; No. 4; 2182-2187; 10.1116/1.590297
• Bandić, Z. Z. and Piquette, E. C., et el. (1998) Solid phase recrystallization of ZnS thin films on sapphire; Applied Physics Letters; Vol. 72; No. 22; 2862-2864; 10.1063/1.121483
• Ting, D. Z.-Y. and Daniel, Erik S., et el. (1998) Interface Roughness Effects in Ultra-Thin Tunneling Oxides; VLSI Design; Vol. 8; No. 1-4; 47-51; 10.1155/1998/23567
• Ting, D. Z.-Y. and McGill, T. C. (1998) Modeling Light-Extraction Characteristics of Packaged Light-Emitting Diodes; VLSI Design; Vol. 6; No. 1-4; 363-366; 10.1155/1998/12165
• Cheng, X.-C. and Collins, D. A., et el. (1997) Mapping of AlxGa1–xAs band edges by ballistic electron emission spectroscopy; Journal of Vacuum Science and Technology A; Vol. 15; No. 4; 2063-2068; 10.1116/1.580609
• Piquette, E. C. and Bandić, Z. Z., et el. (1997) Growth and characterization of light emitting ZnS/GaN heterostructures; Journal of Vacuum Science and Technology B; Vol. 15; No. 4; 1148-1152; 10.1116/1.589430
• Daniel, E. S. and Jones, J. T., et el. (1997) Macroscopic and microscopic studies of electrical properties of very thin silicon dioxide subject to electrical stress; Journal of Vacuum Science and Technology B; Vol. 15; No. 4; 1089-1096; 10.1116/1.589419
• Walachová, J. and Zelinka, J., et el. (1997) Probing of InAs/AlSb double barrier heterostructures by ballistic electron emission spectroscopy; Applied Physics Letters; Vol. 70; No. 26; 3588-3590; 10.1063/1.119274
• Bandić, Z. Z. and McGill, T. C., et el. (1996) Microscopic processes during electron cyclotron resonance microwave nitrogen plasma-assisted molecular beam epitaxial growth of GaN/GaAs heterostructures: Experiments and kinetic modeling; Journal of Vacuum Science and Technology B; Vol. 14; No. 4; 2948-2951; 10.1116/1.588940
• Pettersson, P. O. and Ahn, C. C., et el. (1996) Characterization of Si/Si_(1-y)C_y superlattices grown by surfactant assisted molecular beam epitaxy; Journal of Vacuum Science and Technology B; Vol. 14; No. 4; 3030-3034; 10.1116/1.589059
• Ting, D. Z.-Y. and McGill, T. C. (1996) Interface roughness effects on transport in tunnel structures; Journal of Vacuum Science and Technology B; Vol. 14; No. 4; 2790-2793; 10.1116/1.588834
• Marquardt, R. R. and Collins, D. A., et el. (1996) Resonant magnetotunneling spectroscopy of p-type-well interband tunneling diodes; Physical Review B; Vol. 53; No. 20; 13624-13630; 10.1103/PhysRevB.53.13624
• Bandić, Z. Z. and Hauenstein, R. J., et el. (1996) Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma-assisted molecular beam epitaxial growth of GaN/GaAs-based heterostructures; Applied Physics Letters; Vol. 68; No. 11; 1510-1512; 10.1063/1.115682
• Ting, David Z.-Y. and McGill, Thomas C. (1995) Monte Carlo simulation of light-emitting diode light-extraction characteristics; Optical Engineering; Vol. 34; No. 12; 3545-3553; 10.1117/12.215485
• Pettersson, P. O. and Ahn, C. C., et el. (1995) Sb-surfactant-mediated growth of Si/Si1–yCy superlattices by molecular-beam epitaxy; Applied Physics Letters; Vol. 67; No. 17; 2530-2532; 10.1063/1.114448
• Collins, D. A. and Papa, G. O., et el. (1995) Real-time extraction of growth rates from rotating substrates during molecular-beam epitaxy; Journal of Vacuum Science and Technology B; Vol. 13; No. 5; 1953-1959; 10.1116/1.588114
• Wang, M. W. and Collins, D. A., et el. (1995) Study of interface asymmetry in InAs–GaSb heterojunctions; Journal of Vacuum Science and Technology B; Vol. 13; No. 4; 1689-1693; 10.1116/1.587879
• Wang, M. W. and McCaldin, J. O., et el. (1995) Schottky-based band lineups for refractory semiconductors; Applied Physics Letters; Vol. 66; No. 15; 1974-1976; 10.1063/1.113295
• Feenstra, R. M. and Collins, D. A., et el. (1994) Scanning tunneling microscopy of lnAs/GaSb superlattices: Subbands, interface roughness, and interface asymmetry; Journal of Vacuum Science and Technology B; Vol. 12; No. 4; 2592-2597; 10.1116/1.587215
• Wang, M. W. and Swenberg, J. F., et el. (1994) X-ray photoelectron spectroscopy measurement of valence-band offsets for Mg-based semiconductor compounds; Applied Physics Letters; Vol. 64; No. 25; 3455-3457; 10.1063/1.111239
• Kirby, S. K. and Ting, D. Z.-Y., et el. (1994) Fluctuations in the transmission properties of a quantum dot with interface roughness and impurities; Semiconductor Science and Technology; Vol. 9; No. 5S; 918-921; 10.1088/0268-1242/9/5S/139
• Collins, D. A. and Wang, M. W., et el. (1994) Reflection high energy electron diffraction observation of exchange reaction dynamics on InAs surfaces; Journal of Vacuum Science and Technology B; Vol. 12; No. 2; 1125-1128; 10.1116/1.587063
• Wang, M. W. and Collins, D. A., et el. (1993) X-ray photoelectron spectroscopy investigation of the mixed anion GaSb/InAs heterointerface; Journal of Vacuum Science and Technology B; Vol. 11; No. 4; 1418-1422; 10.1116/1.586952
• Ting, D. Z.-Y. and Kirby, S. K., et el. (1993) Three-dimensional simulations of quantum transport in semiconductor nanostructures; Journal of Vacuum Science and Technology B; Vol. 11; No. 4; 1738-1742; 10.1116/1.586472
• Wang, M. W. and Phillips, M. C., et el. (1993) n-CdSe/p-ZnTe based wide band-gap light emitters: Numerical simulation and design; Journal of Applied Physics; Vol. 73; No. 9; 4660-4668; 10.1063/1.352761
• Miles, R. H. and Schulman, J. N., et el. (1993) Electronic band structure of far-infrared Ga1-xInxSb/InAs superlattices; Semiconductor Science and Technology; Vol. 8; No. 1S; S102-S105; 10.1088/0268-1242/8/1S/023
• Yu, E. T. and Phillips, M. C., et el. (1992) Interfacial reactions and band offsets in the AlSb/GaSb/ZnTe material system; Physical Review B; Vol. 46; No. 20; 13379-13388; 10.1103/PhysRevB.46.13379
• McCaldin, J. O. and McGill, T. C. (1992) Comment on "Empirical fit to band discontinuities and barrier heights in III-V alloy systems"; Applied Physics Letters; Vol. 61; No. 18; 2243; 10.1063/1.108255
• Phillips, M. C. and Wang, M. W., et el. (1992) Proposal and verification of a new visible light emitter based on wide band gap II-VI semiconductors; Applied Physics Letters; Vol. 61; No. 16; 1962-1964; 10.1063/1.108353
• Collins, D. A. and Fu, T. C., et el. (1992) Reflection high-energy electron diffraction studies of the growth of lnAs/Ga_(1-x)In_xSb strained-layer superlattices; Journal of Vacuum Science and Technology B; Vol. 10; No. 4; 1779-1783; 10.1116/1.586240
• Liu, Y. X. and Wang, M. W., et el. (1992) Schottky barrier induced injecting contact on wide band gap semiconductors; Journal of Vacuum Science and Technology B; Vol. 10; No. 4; 2072-2076; 10.1116/1.586320
• Ting, D. Z.-Y. and McGill, T. C. (1992) Effect of Gamma–X mixing on electron tunneling times in GaAs/AlAs double barrier heterostructures; Journal of Vacuum Science and Technology B; Vol. 10; No. 4; 1980-1983; 10.1116/1.586170
• Ting, D. Z.-Y. and Yu, E. T., et el. (1992) Multiband treatment of quantum transport in interband tunnel devices; Physical Review B; Vol. 45; No. 7; 3583-3592; 10.1103/PhysRevB.45.3583
• Chow, D. H. and Miles, R. H., et el. (1991) Type II superlattices for infrared detectors and devices; Semiconductor Science and Technology; Vol. 6; No. 12C; C47-C51; 10.1088/0268-1242/6/12C/010
• Croke, E. T. and Hauenstein, R. J., et el. (1991) Observation of a (2X8) surface reconstruction on Si_(1-x)Ge_x alloys grown on (100) Si by molecular beam epitaxy; Journal of Vacuum Science and Technology B; Vol. 9; No. 4; 2301-2306; 10.1116/1.585737
• Ting, D. Z.-Y. and Yu, E. T., et el. (1991) Band structure effects in interband tunnel devices; Journal of Vacuum Science and Technology B; Vol. 9; No. 4; 2405-2410; 10.1116/1.585711
• Yu, E. T. and Phillips, M. C., et el. (1991) Measurement of the CdSe/ZnTe valence band offset by x-ray photoelectron spectroscopy; Journal of Vacuum Science and Technology B; Vol. 9; No. 4; 2233-2237; 10.1116/1.585726
• Collins, D. A. and Yu, E. T., et el. (1990) Experimental observation of negative differential resistance from an InAs/GaSb interface; Applied Physics Letters; Vol. 57; No. 7; 683-685; 10.1063/1.103591
• Söderström, J. R. and Yu, E. T., et el. (1990) Two-band modeling of narrow band gap and interband tunneling devices; Journal of Applied Physics; Vol. 68; No. 3; 1372-1375; 10.1063/1.346688
• Rajakarunanayake, Y. and McGill, T. C. (1990) Intersubband absorption in Si1–xGex/Si superlattices for long wavelength infrared detectors; Journal of Vacuum Science and Technology B; Vol. 8; No. 4; 929-935; 10.1116/1.584945
• Chow, D. H. and Miles, R. H., et el. (1990) lnAs/Ga_(1-x) ln_xSb strained-layer superlattices grown by molecular-beam epitaxy; Journal of Vacuum Science and Technology B; Vol. 8; No. 4; 710-714; 10.1116/1.584985
• Yu, E. T. and Croke, E. T., et el. (1990) Measurement of the valence band offset in novel heterojunction systems: Si/Ge (100) and AlSb/ZnTe (100); Journal of Vacuum Science and Technology B; Vol. 8; No. 4; 908-915; 10.1116/1.584941
• Ting, D. Z.-Y. and Yu, E. T., et el. (1990) Modeling of novel heterojunction tunnel structures; Journal of Vacuum Science and Technology B; Vol. 8; No. 4; 810-816; 10.1116/1.584971
• Söderström, J. R. and Chow, D. H., et el. (1989) Observation of large peak-to-valley current ratios and large peak current densities in AlSb/InAs/AlSb double-barrier tunnel structures; Journal of Applied Physics; Vol. 66; No. 10; 5106-5108; 10.1063/1.343742
• Wu, G. Y. and McGill, T. C. (1989) Effects of barrier phonons on the tunneling current in a double-barrier structure; Physical Review B; Vol. 40; No. 14; 9969-9972; 10.1103/PhysRevB.40.9969
• Rajakarunanayake, Y. and McGill, T. C. (1989) Si-Si1−xGex n-type resonant tunnel structures; Applied Physics Letters; Vol. 55; No. 15; 1537-1539; 10.1063/1.102238
• Söderström, J. R. and Chow, D. H., et el. (1989) Demonstration of large peak-to-valley current ratios in InAs/AlGaSb/InAs single-barrier heterostructures; Applied Physics Letters; Vol. 55; No. 13; 1348-1350; 10.1063/1.101595
• Rajakarunanayake, Y. and Cole, B. H., et el. (1989) Growth and characterization of ZnTe films grown on GaAs, InAs, GaSb, and ZnTe; Applied Physics Letters; Vol. 55; No. 12; 1217-1219; 10.1063/1.101659
• Söderström, J. R. and Chow, D. H., et el. (1989) New negative differential resistance device based on resonant interband tunneling; Applied Physics Letters; Vol. 55; No. 11; 1094-1096; 10.1063/1.101715
• Yu, E. T. and Jackson, M. K., et el. (1989) Hole tunneling times in GaAs/AlAs double-barrier structures; Applied Physics Letters; Vol. 55; No. 8; 744-746; 10.1063/1.101793
• Jackson, M. K. and Miles, R. H., et el. (1989) Raman scattering determination of strain in CdTe/ZnTe superlattices; Applied Physics Letters; Vol. 55; No. 8; 786-788; 10.1063/1.101781
• Rajakarunanayake, Y. and McGill, T. C. (1989) Band structure and optical properties of Si-Si1-xGex superlattices; Physical Review B; Vol. 40; No. 5; 3051-3059; 10.1103/PhysRevB.40.3051
• Rajakarunanayake, Y. F. and McGill, T. C. (1989) Strain effects and optical properties of Si1–xGex/Si superlattices; Journal of Vacuum Science and Technology B; Vol. 7; No. 4; 799-803; 10.1116/1.584603
• Johnson, M. B. and McGill, T. C., et el. (1989) Space- and time-resolved photoluminescence of In-alloyed GaAs using photoluminescence excitation correlation spectroscopy; Journal of Applied Physics; Vol. 66; No. 2; 838-844; 10.1063/1.343506
• Hauenstein, R. J. and Clemens, B. M., et el. (1989) Strain relaxation kinetics in Si1–xGex/Si heterostructures; Journal of Vacuum Science and Technology B; Vol. 7; No. 4; 767-774; 10.1116/1.584598
• Miles, R. H. and McGill, T. C. (1989) Structural perfection in poorly lattice matched heterostructures; Journal of Vacuum Science and Technology B; Vol. 7; No. 4; 753-757; 10.1116/1.584639
• Ting, D. Z.-Y. and McGill, T. C. (1989) X-point tunneling in AlAs–GaAs–AlAs double barrier heterostructures; Journal of Vacuum Science and Technology B; Vol. 7; No. 4; 1031-1034; 10.1116/1.584796
• Johnson, M. B. and McGill, T. C., et el. (1989) Carrier lifetimes in ion-damaged GaAs; Applied Physics Letters; Vol. 54; No. 24; 2424-2426; 10.1063/1.101096
• Wu, G. Y. and McGill, T. C., et el. (1989) k⋅p theory of semiconductor superlattice electronic structure in an applied magnetic field; Physical Review B; Vol. 39; No. 9; 6060-6070; 10.1103/PhysRevB.39.6060
• Yu, E. T. and Chow, D. H., et el. (1989) Commutativity of the GaAs/AlAs (100) band offset; Journal of Vacuum Science and Technology B; Vol. 7; No. 2; 391-394; 10.1116/1.584758
• Jackson, M. K. and Johnson, M. B., et el. (1989) Electron tunneling time measured by photoluminescence excitation correlation spectroscopy; Applied Physics Letters; Vol. 54; No. 6; 552-554; 10.1063/1.100928
• Boudville, W. J. and McGill, T. C. (1989) Finite-size effects in two-dimensional continuum percolation; Physical Review B; Vol. 39; No. 1; 369-374; 10.1103/PhysRevB.39.369
• Chow, D. H. and McCaldin, J. O., et el. (1988) Electrical determination of the valence-band discontinuity in HgTe-CdTe heterojunctions; Applied Physics Letters; Vol. 51; No. 26; 2230-2232; 10.1063/1.98949
• Rajakarunanayake, Y. and Miles, R. H., et el. (1988) Band offset of the ZnSe–ZnTe superlattices: A fit to photoluminescence data by k·p theory; Journal of Vacuum Science and Technology B; Vol. 6; No. 4; 1354-1359; 10.1116/1.584220
• Miles, R. H. and Chow, P. P., et el. (1988) Accommodation of lattice mismatch in Ge_(x)Si_(1−x)/Si superlattices; Journal of Vacuum Science and Technology B; Vol. 6; No. 4; 1382-1385; 10.1116/1.584226
• Chow, D. H. and McCaldin, J. O., et el. (1988) Electrical studies of single-barrier Hg_(1-x)Cd_x Te heterostructures; Journal of Vacuum Science and Technology A; Vol. 6; No. 4; 2614-2618; 10.1116/1.575517
• McCaldin, J. O. and McGill, T. C. (1988) Proposal of a new visible light emitting structure: n-AlSb/p-ZnTe heterojunctions; Journal of Vacuum Science and Technology B; Vol. 6; No. 4; 1360-1363; 10.1116/1.584221
• Rajakarunanayake, Y. and Miles, R. H., et el. (1988) Band structure of ZnSe-ZnTe superlattices; Physical Review B; Vol. 37; No. 17; 10212-10215; 10.1103/PhysRevB.37.10212
• Wu, G. Y. and McGill, T. C., et el. (1987) Theoretical studies of electronic properties of semimagnetic superlattices in a magnetic field; Journal of Vacuum Science and Technology B; Vol. 5; No. 5; 3096-3101; 10.1116/1.574224
• Rajakarunanayake, Y. and McGill, T. C. (1987) Self-consistent solutions of electronic wave functions at GaAs–AlxGa1–xAs interfaces; Journal of Vacuum Science and Technology B; Vol. 5; No. 4; 1288-1294; 10.1116/1.583822
• Miles, R. H. and McGill, T. C., et el. (1987) Structure of CdTe/ZnTe superlattices; Journal of Vacuum Science and Technology B; Vol. 5; No. 4; 1263-1267; 10.1116/1.583816
• Woodward, T. K. and McGill, T. C., et el. (1986) Electrical behavior of GaAs–AlAs heterostructures; Journal of Vacuum Science and Technology B; Vol. 4; No. 4; 1022-1027; 10.1116/1.583573
• McGill, T. C. and Wu, G. Y., et el. (1986) Superlattices: Progress and prospects; Journal of Vacuum Science and Technology A; Vol. 4; No. 4; 2091-2095; 10.1116/1.574033
• Bonnefoi, A. R. and Chow, D. H., et el. (1986) Current transport mechanisms in GaAs/AlAs tunnel structures grown by metal–organic chemical vapor deposition; Journal of Vacuum Science and Technology B; Vol. 4; No. 4; 988-995; 10.1116/1.583503
• Baukus, J. P. and Hunter, A. T., et el. (1986) Infrared absorption measurement and analysis of HgTe–CdTe superlattices; Journal of Vacuum Science and Technology A; Vol. 4; No. 4; 2110-2113; 10.1116/1.574037
• Hauenstein, R. J. and Schlesinger, T. E., et el. (1986) Schottky barrier height measurements of type-A and type-B NiSi2 epilayers on Si; Journal of Vacuum Science and Technology A; Vol. 4; No. 3; 860-864; 10.1116/1.573796
• Hauenstein, R. J. and Schlesinger, T. E., et el. (1986) Summary Abstract: Schottky barrier height measurements of type A and type B NiSi2 on Si; Journal of Vacuum Science and Technology B; Vol. 4; No. 2; 549-550; 10.1116/1.583587
• Bonnefoi, A. R. and McGill, T. C., et el. (1985) Resonant tunneling transistors with controllable negative differential resistances; IEEE Electron Device Letters; Vol. 6; No. 12; 636-638; 10.1109/EDL.1985.26258
• Zur, A. and McGill, T. C. (1985) Theoretical investigation of the effect of strain on phase separation in epitaxial layers; Journal of Vacuum Science and Technology B; Vol. 3; No. 4; 1055-1060; 10.1116/1.583095
• Schlesinger, T. E. and Zur, A., et el. (1985) Photoresponse of GaAs/AlAs heterostructures under external bias; Journal of Vacuum Science and Technology B; Vol. 3; No. 4; 1146-1148; 10.1116/1.583071
• Johnson, M. B. and Zur, A., et el. (1985) Summary Abstract: Band offsets at HgTe CdTe interfaces; Journal of Vacuum Science and Technology B; Vol. 3; No. 4; 1260; 10.1116/1.583008
• Boudville, W. J. and McGill, T. C. (1985) Ohmic contacts to n-type GaAs; Journal of Vacuum Science and Technology B; Vol. 3; No. 4; 1192-1196; 10.1116/1.583038
• Zur, A. and McGill, T. C., et el. (1985) Transition-metal silicides lattice-matched to silicon; Journal of Applied Physics; Vol. 57; No. 2; 600-603; 10.1063/1.334743
• Mailhiot, C. and McGill, T. C., et el. (1984) New approach to the k·p theory of semiconductor superlattices; Journal of Vacuum Science and Technology B; Vol. 2; No. 3; 371-375; 10.1116/1.582826
• Zur, A. and McGill, T. C. (1984) Band offsets, defects, and dipole layers in semiconductor heterojunctions; Journal of Vacuum Science and Technology B; Vol. 2; No. 3; 440-444; 10.1116/1.582891
• Collins, R. T. and Lambe, J., et el. (1984) Elastic and inelastic tunneling characteristics of AIAs/GaAs heterojunctions; Journal of Vacuum Science and Technology B; Vol. 2; No. 3; 597-598; 10.1116/1.582845
• Smith, D. L. and McGill, T. C. (1984) HgTe-CdTe Superlattices; Journal de Physique Colloques; Vol. 45; No. C5; 509-513; 10.1051/jphyscol:1984575
• Collins, R. T. and Lambe, J., et el. (1984) Inelastic tunneling characteristics of AIAs/GaAs heterojunction barriers; Journal of Vacuum Science and Technology B; Vol. 2; No. 2; 201-202; 10.1116/1.582779
• Zur, A. and McGill, T. C. (1984) Lattice match: An application to heteroepitaxy; Journal of Applied Physics; Vol. 55; No. 2; 378-386; 10.1063/1.333084
• Prabhakar, A. and McGill, T. C., et el. (1983) Platinum diffusion into silicon from PtSi; Applied Physics Letters; Vol. 43; No. 12; 1118-1120; 10.1063/1.94247
• Zur, A. and McGill, T. C., et el. (1983) Fermi-level position at a semiconductor-metal interface; Physical Review B; Vol. 28; No. 4; 2060-2067; 10.1103/PhysRevB.28.2060
• Collins, R. T. and McGill, T. C. (1983) Electronic properties of deep levels in p‐type CdTe; Journal of Vacuum Science and Technology A; Vol. 1; No. 3; 1633-1636; 10.1116/1.572245
• Mailhiot, C. and Smith, D. L., et el. (1983) Transport characteristics of L-point and Г-point electrons through GaAs-Ga_(1-x)Ai_xAs-GaAs(111} double heterojunctions; Journal of Vacuum Science and Technology B; Vol. 1; No. 3; 637-642; 10.1116/1.582568
• Zur, A. and McGill, T. C., et el. (1983) Summary Abstract: The effect of doping on Fermi level position at a semiconductor–metal interface; Journal of Vacuum Science and Technology B; Vol. 1; No. 3; 608-609; 10.1116/1.582607
• Mailhiot, C. and McGill, T. C., et el. (1983) Tunneling and propagating transport in GaAs-Ga_(1-x)Al_xAs-GaAs(100) double heterojunctions; Journal of Vacuum Science and Technology B; Vol. 1; No. 2; 439-444; 10.1116/1.582622
• McGill, T. C. and Smith, D. L. (1983) Summary Abstract: HgTe–CdTe superlattices; Journal of Vacuum Science and Technology B; Vol. 1; No. 2; 260-261; 10.1116/1.582498
• McGill, T. C. and Collins, D. A. (1983) Prospects for the future of narrow bandgap materials; Semiconductor Science and Technology; Vol. 8; No. 1S; S1-S5; 10.1088/0268-1242/8/1S/001
• Redondo, Antonio and Goddard, William A., III, et el. (1982) Summary Abstract: Mott insulator model of the Si(111)-(2×1) surface; Journal of Vacuum Science and Technology; Vol. 21; No. 2; 328-329; 10.1116/1.571772
• Redondo, Antonio and Goddard, William A., III, et el. (1982) Mott insulator model of the Si(111)–(2×1) surface; Journal of Vacuum Science and Technology; Vol. 21; No. 2; 649-654; 10.1116/1.571806
• Mailhiot, C. and Chang, Yia-Chung, et el. (1982) Energy spectra of donors in GaAs-Ga_(1-x)Al_(x)As quantum well structures in the effective mass approximation; Journal of Vacuum Science and Technology; Vol. 21; No. 2; 519-523; 10.1116/1.571751
• Swarts, C. A. and Daw, M. S., et el. (1982) Bulk vacancies in CdxHg1–xTe; Journal of Vacuum Science and Technology; Vol. 21; No. 1; 198-200; 10.1116/1.571712
• Collins, R. T. and Kuech, T. F., et el. (1982) A DLTS study of deep levels in n-type CdTe; Journal of Vacuum Science and Technology; Vol. 21; No. 1; 191-194; 10.1116/1.571710
• Hunter, A. T. and McGill, T. C. (1982) Luminescence studies of HgCdTe alloys; Journal of Vacuum Science and Technology; Vol. 21; No. 1; 205-207; 10.1116/1.571716
• Hunter, A. T. and McGill, T. C. (1982) Selective excitation luminescence in bulk-grown GaAs; Applied Physics Letters; Vol. 40; No. 2; 169-171; 10.1063/1.93031
• Redondo, A. and Goddard, W. A., III, et el. (1981) Electronic structure of steps on silicon (111) surfaces from theoretical studies of finite clusters; Physical Review B; Vol. 24; No. 10; 6135-6138; 10.1103/PhysRevB.24.6135
• Swarts, C. A. and Goddard, W. A., III, et el. (1981) Core to surface excitations on GaAs(110); Journal of Vacuum Science and Technology; Vol. 19; No. 3; 360-366; 10.1116/1.571064
• Swarts, C. A. and Goddard, W. A., III, et el. (1981) Geometry of the abrupt (110) Ge/GaAs interface; Journal of Vacuum Science and Technology; Vol. 19; No. 3; 551-555; 10.1116/1.571124
• Redondo, A. and Goddard, W. A., III, et el. (1981) Oxidation of silicon surfaces; Journal of Vacuum Science and Technology; Vol. 19; No. 3; 498-501; 10.1116/1.571046
• Daw, M. S. and Smith, D. L., et el. (1981) Surface core excitons in III-V semiconductors; Journal of Vacuum Science and Technology; Vol. 19; No. 3; 388-389; 10.1116/1.571069
• Daw, M. S. and Smith, D. L., et el. (1981) Surface vacancies in II-VI and III-V zinc blende semiconductors; Journal of Vacuum Science and Technology; Vol. 19; No. 3; 508-512; 10.1116/1.571048
• Swarts, C. A. and Goddard, W. A., III, et el. (1980) Theoretical studies of the reconstruction of the (110) surface of III–V and II–VI semiconductor compounds; Journal of Vacuum Science and Technology; Vol. 17; No. 5; 982-986; 10.1116/1.570652
• Schulman, J. N. and McGill, T. C. (1980) Localization of superlattice electronic states and complex bulk band structures; Journal of Vacuum Science and Technology; Vol. 17; No. 5; 1118-1119; 10.1116/1.570625
• Swarts, C. A. and Barton, J. J., et el. (1980) Chemisorption of Al and Ga on the GaAs (110) surface; Journal of Vacuum Science and Technology; Vol. 17; No. 5; 869-873; 10.1116/1.570607
• McCaldin, J. O. and McGill­, T. C. (1980) The metal-semiconductor interface; Annual Review of Materials Science; Vol. 10; 65-83; 10.1146/annurev.ms.10.080180.000433
• Hunter, A. T. and Smith, D. L., et el. (1980) Near-band‐gap photoluminescence of Hg_(1−x)Cd_xTe; Applied Physics Letters; Vol. 37; No. 2; 200-203; 10.1063/1.91824
• Barton, John J. and Swarts, Coenraad A., et el. (1980) Chemisorption of oxygen and aluminum on the GaAs (110) surface from ab initio theory; Journal of Vacuum Science and Technology; Vol. 17; No. 1; 164-168; 10.1116/1.570462
• Hunter, A. T. and Lyon, S. A., et el. (1979) Transient decay of satellite lines of bound excitons in Si: P; Physical Review B; Vol. 20; No. 6; 2431-2437; 10.1103/PhysRevB.20.2431
• Barton, John J. and Goddard, William A., III, et el. (1979) Reconstruction and oxidation of the GaAs(110) surface; Journal of Vacuum Science and Technology; Vol. 16; No. 5; 1178-1185; 10.1116/1.570186
• Goddard, William A., III and McGill, T. C. (1979) Study of surfaces and interfaces using quantum chemistry techniques; Journal of Vacuum Science and Technology; Vol. 16; No. 5; 1308-1317; 10.1116/1.570148
• Schulman, J. N. and McGill, T. C. (1979) Ideal CdTe/HgTe superlattices; Journal of Vacuum Science and Technology; Vol. 16; No. 5; 1513-1516; 10.1116/1.570237
• Schulman, J. N. and McGill, T. C. (1978) Tight‐binding calculation for the AlAs–GaAs (100) interface; Journal of Vacuum Science and Technology; Vol. 15; No. 4; 1456-1458; 10.1116/1.569807
• Goddard, William A., III and Barton, John J., et el. (1978) Theoretical studies of Si and GaAs surfaces and initial steps in the oxidation; Journal of Vacuum Science and Technology; Vol. 15; No. 4; 1274-1286; 10.1116/1.569753
• Chen, M. and Lyon, S. A., et el. (1977) Transients of the photoluminescence from EHD in doped and undoped Ge; Il Nuovo Cimento B; Vol. 39; No. 2; 622-627; 10.1007/bf02725801
• Best, J. S. and McCaldin, J. O., et el. (1976) HgSe, a highly electronegative stable metallic contact for semiconductor devices; Applied Physics Letters; Vol. 29; No. 7; 433-434; 10.1063/1.89109
• Mead, C. A. and McGill, T. C. (1976) Schottky barrier heights on p-type diamond and silicon carbide (6h); Physics Letters A; Vol. 58; No. 4; 249-251; 10.1016/0375-9601(76)90088-8
• Scranton, R. A. and Mooney, J. B., et el. (1976) Highly electronegative metallic contacts to semiconductors using polymeric sulfur nitride; Applied Physics Letters; Vol. 29; No. 1; 47-48; 10.1063/1.88868
• McCaldin, J. O. and McGill, T. C., et el. (1976) Schottky barriers on compound semiconductors: The role of the anion; Journal of Vacuum Science and Technology; Vol. 13; No. 4; 802-806; 10.1116/1.568993
• McCaldin, J. O. and McGill, T. C., et el. (1976) Correlation for III-V and II-VI Semiconductors of the Au Schottky Barrier Energy with Anion Electronegativity; Physical Review Letters; Vol. 36; No. 1; 56-58; 10.1103/PhysRevLett.36.56
• Hammond, R. B. and Smith, D. L., et el. (1975) Temperature dependence of silicon luminescence due to splitting of the indirect ground state; Physical Review Letters; Vol. 35; No. 22; 1535-1538; 10.1103/PhysRevLett.35.1535
• Smith, D. L. and Pan, D. S., et el. (1975) Impact ionization of excitons in Ge and Si; Physical Review B; Vol. 12; No. 10; 4360-4366; 10.1103/PhysRevB.12.4360
• McGill, T. C. and Baron, R. (1975) Neutral impurity scattering in semiconductors; Physical Review B; Vol. 11; No. 12; 5208-5210; 10.1103/PhysRevB.11.5208
• Lee, T. F. and McGill, T. C. (1975) Variation of impurity–to–band activation energies with impurity density; Journal of Applied Physics; Vol. 46; No. 1; 373-380; 10.1063/1.321346
• Lee, T. F. and Pashley, R. D., et el. (1975) Investigation of tellurium-implanted silicon; Journal of Applied Physics; Vol. 46; No. 1; 381-388; 10.1063/1.321347
• McGill, T. C. (1974) Phenomenology of metal-semiconductor electrical barriers; Journal of Vacuum Science and Technology; Vol. 11; No. 6; 935-942; 10.1116/1.1318709
• Daimon, Yoshiaki and Mohsen, Amr M., et el. (1974) Final stage of the charge-transfer process in charge-coupled devices; IEEE Transactions on Electron Devices; Vol. 21; No. 4; 266-272; 10.1109/T-ED.1974.17908
• Silver, R. N. and McGill, T. C. (1974) Spin-excitation spectra and resistance minima in amorphous ferromagnetic alloys; Physical Review B; Vol. 9; No. 1; 272-280; 10.1103/PhysRevB.9.272
• McGill, T. C. and Mead, C. A. (1974) Electrical interface barriers; Journal of Vacuum Science and Technology; Vol. 11; No. 1; 122-127; 10.1116/1.1318540
• Lee, T. F. and McGill, T. C. (1973) Semiempirical calculation of deep levels: divacancy in Si; Journal of Physics C: Solid State Physics; Vol. 6; No. 23; 3438-3450; 10.1088/0022-3719/6/23/017
• Marrello, V. and Lee, T. F., et el. (1973) Condensation of Injected Electrons and Holes in Germanium; Physical Review Letters; Vol. 31; No. 9; 593-594; 10.1103/PhysRevLett.31.593
• Mohsen, A. M. and Bower, R., et el. (1973) Overlapping-gate buried-channel charge-coupled devices; Electronics Letters; Vol. 9; No. 17; 396-398; 10.1049/el:19730293
• Mohsen, Amr M. and McGill, T. C., et el. (1973) Charge transfer in overlapping gate charge-coupled devices; IEEE Journal of Solid-State Circuits; Vol. 8; No. 3; 191-207; 10.1109/JSSC.1973.1050376
• Mohsen, Amr M. and McGill, T. C., et el. (1973) The influence of interface states on incomplete charge transfer in overlapping gate charge-coupled devices; IEEE Journal of Solid-State Circuits; Vol. 8; No. 2; 125-138; 10.1109/JSSC.1973.1050361
• Mohsen, A. M. and McGill, T. C., et el. (1973) Push clocks: a new approach to charge-coupled devices clocking; Applied Physics Letters; Vol. 22; No. 4; 172-175; 10.1063/1.1654600
• McGill, T. C. (1972) Evaluation of the Third Moment of the Imaginary Part of the Dielectric Constant; Physical Review B; Vol. 6; No. 6; 2493-2495; 10.1103/PhysRevB.6.2493
• McGill, T. C. and Klima, J. (1972) Short-Range Order and Pseudogaps in Elemental Amorphous Covalent Semiconductors; Physical Review B; Vol. 5; No. 4; 1517-1528; 10.1103/PhysRevB.5.1517
• Kurtin, S. L. and McGill, T. C., et el. (1971) Direct interelectrode tunneling in GaSe; Physical Review B; Vol. 3; No. 10; 3368-3379; 10.1103/PhysRevB.3.3368
• McGill, T. C. and Klima, J. (1970) Critical analysis of the 'generalized coherent wave approximation'; Journal of Physics C: Solid State Physics; Vol. 3; No. 11; 2240-2244; 10.1088/0022-3719/3/11/008
• Kurtin, Stephen and McGill, T. C., et el. (1970) Tunneling Currents and the E-k Relation; Physical Review Letters; Vol. 25; No. 11; 756-759; 10.1103/PhysRevLett.25.756
• McGill, T. C. and Klima, J. (1970) Energy gaps in amorphous covalent semiconductors; Journal of Physics C: Solid State Physics; Vol. 3; No. 9; L163-L164; 10.1088/0022-3719/3/9/020
• McGill, T. C. and Kurtin, S., et el. (1970) Contact-limited currents in metal-insulator-metal structures; Journal of Applied Physics; Vol. 41; No. 9; 3831-3839; 10.1063/1.1659514
• McGill, T. C. and Kurtin, S. L., et el. (1970) Optical Reflection Studies of Damage in Ion Implanted Silicon; Journal of Applied Physics; Vol. 41; No. 1; 246-251; 10.1103/PhysRevB.11.5208
• Pearson, J. E. and McGill, T. C., et el. (1969) Diffraction of Gaussian Laser Beams by a Semi-Infinite Plane; Journal of the Optical Society of America; Vol. 59; No. 11; 1440-1445
• Kurtin, S. and McGill, T. C., et el. (1969) Fundamental transition in the electronic nature of solids; Physical Review Letters; Vol. 22; No. 26; 1433-1436; 10.1103/PhysRevLett.22.1433
• Kurtin, Stephen and Shifrin, Gordon A., et el. (1969) Ion implantation damage of silicon as observed by optical reflection spectroscopy in the 1 to 6 eV region; Applied Physics Letters; Vol. 14; No. 7; 223-225; 10.1063/1.1652788
• Parker, G. H. and McGill, T. C., et el. (1968) Electric field dependence of GaAs Schottky barriers; Solid-State Electronics; Vol. 11; No. 2; 201-204; 10.1016/0038-1101(68)90079-8
• Thornber, K. K. and McGill, Thomas C., et el. (1967) The Tunneling Time of an Electron; Journal of Applied Physics; Vol. 38; No. 5; 2384-2384; 10.1063/1.1709888