<h1>McCaldin, James Oeland</h1> <h2>Combined from <a href="https://authors.library.caltech.edu">CaltechAUTHORS</a></h2> <ul> <li>Bandić, Z. Z. and Piquette, E. C., el al. (1998) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BANapl98">Solid phase recrystallization of ZnS thin films on sapphire</a>; Applied Physics Letters; Vol. 72; No. 22; 2862-2864; <a href="https://doi.org/10.1063/1.121483">10.1063/1.121483</a></li> <li>Piquette, E. C. and Bandić, Z. Z., el al. (1997) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120130-111304712">Growth and characterization of light emitting ZnS/GaN heterostructures</a>; Journal of Vacuum Science and Technology B; Vol. 15; No. 4; 1148-1152; <a href="https://doi.org/10.1116/1.589430">10.1116/1.589430</a></li> <li>Wang, M. W. and McCaldin, J. O., el al. (1995) <a href="https://resolver.caltech.edu/CaltechAUTHORS:WANapl95">Schottky-based band lineups for refractory semiconductors</a>; Applied Physics Letters; Vol. 66; No. 15; 1974-1976; <a href="https://doi.org/10.1063/1.113295">10.1063/1.113295</a></li> <li>Wang, M. W. and Swenberg, J. F., el al. (1994) <a href="https://resolver.caltech.edu/CaltechAUTHORS:WANapl94">X-ray photoelectron spectroscopy measurement of valence-band offsets for Mg-based semiconductor compounds</a>; Applied Physics Letters; Vol. 64; No. 25; 3455-3457; <a href="https://doi.org/10.1063/1.111239">10.1063/1.111239</a></li> <li>Wang, M. W. and Phillips, M. C., el al. (1993) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120307-105358808">n-CdSe/p-ZnTe based wide band-gap light emitters: Numerical simulation and design</a>; Journal of Applied Physics; Vol. 73; No. 9; 4660-4668; <a href="https://doi.org/10.1063/1.352761">10.1063/1.352761</a></li> <li>Yu, E. T. and Phillips, M. C., el al. (1992) <a href="https://resolver.caltech.edu/CaltechAUTHORS:YUEprb92">Interfacial reactions and band offsets in the AlSb/GaSb/ZnTe material system</a>; Physical Review B; Vol. 46; No. 20; 13379-13388; <a href="https://doi.org/10.1103/PhysRevB.46.13379">10.1103/PhysRevB.46.13379</a></li> <li>McCaldin, J. O. and McGill, T. C. (1992) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCCapl92">Comment on "Empirical fit to band discontinuities and barrier heights in III-V alloy systems"</a>; Applied Physics Letters; Vol. 61; No. 18; 2243; <a href="https://doi.org/10.1063/1.108255">10.1063/1.108255</a></li> <li>Phillips, M. C. and Wang, M. W., el al. (1992) <a href="https://resolver.caltech.edu/CaltechAUTHORS:PHIapl92">Proposal and verification of a new visible light emitter based on wide band gap II-VI semiconductors</a>; Applied Physics Letters; Vol. 61; No. 16; 1962-1964; <a href="https://doi.org/10.1063/1.108353">10.1063/1.108353</a></li> <li>Liu, Y. X. and Wang, M. W., el al. (1992) <a href="https://resolver.caltech.edu/CaltechAUTHORS:LIUjvstb92">Schottky barrier induced injecting contact on wide band gap semiconductors</a>; Journal of Vacuum Science and Technology B; Vol. 10; No. 4; 2072-2076; <a href="https://doi.org/10.1116/1.586320">10.1116/1.586320</a></li> <li>Yu, E. T. and Phillips, M. C., el al. (1991) <a href="https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb91">Measurement of the CdSe/ZnTe valence band offset by x-ray photoelectron spectroscopy</a>; Journal of Vacuum Science and Technology B; Vol. 9; No. 4; 2233-2237; <a href="https://doi.org/10.1116/1.585726">10.1116/1.585726</a></li> <li>Yu, E. T. and Croke, E. T., el al. (1990) <a href="https://resolver.caltech.edu/CaltechAUTHORS:YUEjvstb90">Measurement of the valence band offset in novel heterojunction systems: Si/Ge (100) and AlSb/ZnTe (100)</a>; Journal of Vacuum Science and Technology B; Vol. 8; No. 4; 908-915; <a href="https://doi.org/10.1116/1.584941">10.1116/1.584941</a></li> <li>McCaldin, J. O. (1990) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCCjvsta90">Current approaches to pn junctions in wider band gap II–VI semiconductors</a>; Journal of Vacuum Science and Technology A; Vol. 8; No. 2; 1188-1193; <a href="https://doi.org/10.1116/1.576943">10.1116/1.576943</a></li> <li>Rajakarunanayake, Y. and Cole, B. H., el al. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:RAJapl89">Growth and characterization of ZnTe films grown on GaAs, InAs, GaSb, and ZnTe</a>; Applied Physics Letters; Vol. 55; No. 12; 1217-1219; <a href="https://doi.org/10.1063/1.101659">10.1063/1.101659</a></li> <li>Chow, D. H. and McCaldin, J. O., el al. (1988) <a href="https://resolver.caltech.edu/CaltechAUTHORS:CHOapl88">Electrical determination of the valence-band discontinuity in HgTe-CdTe heterojunctions</a>; Applied Physics Letters; Vol. 51; No. 26; 2230-2232; <a href="https://doi.org/10.1063/1.98949">10.1063/1.98949</a></li> <li>Chow, D. H. and McCaldin, J. O., el al. (1988) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120601-092710911">Electrical studies of single-barrier Hg_(1-x)Cd_x Te heterostructures</a>; Journal of Vacuum Science and Technology A; Vol. 6; No. 4; 2614-2618; <a href="https://doi.org/10.1116/1.575517">10.1116/1.575517</a></li> <li>McCaldin, J. O. and McGill, T. C. (1988) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCCjvstb88">Proposal of a new visible light emitting structure: n-AlSb/p-ZnTe heterojunctions</a>; Journal of Vacuum Science and Technology B; Vol. 6; No. 4; 1360-1363; <a href="https://doi.org/10.1116/1.584221">10.1116/1.584221</a></li> <li>Johnson, M. B. and Zur, A., el al. (1985) <a href="https://resolver.caltech.edu/CaltechAUTHORS:JOHjvstb85">Summary Abstract: Band offsets at HgTe CdTe interfaces</a>; Journal of Vacuum Science and Technology B; Vol. 3; No. 4; 1260; <a href="https://doi.org/10.1116/1.583008">10.1116/1.583008</a></li> <li>Kuech, T. F. and McCaldin, J. O. (1982) <a href="https://resolver.caltech.edu/CaltechAUTHORS:KUEjap82">HgTe/CdTe heterojunctions: A lattice-matched Schottky barrier structure</a>; Journal of Applied Physics; Vol. 53; No. 4; 3121-3128; <a href="https://doi.org/10.1063/1.331008">10.1063/1.331008</a></li> <li>McCaldin, J. O. and Kuech, T. F. (1981) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCCjap81">Stability and pinning points in substrate-confined liquids</a>; Journal of Applied Physics; Vol. 52; No. 2; 803-807; <a href="https://doi.org/10.1063/1.328766">10.1063/1.328766</a></li> <li>Kuech, T. F. and McGaldin, J. O. (1980) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120718-141159392">Compositional dependence of Schottky barrier heights for Au on chemically etched In_(x)Ga_(1-x)P surfaces</a>; Journal of Vacuum Science and Technology; Vol. 17; No. 5; 891-893; <a href="https://doi.org/10.1116/1.570611">10.1116/1.570611</a></li> <li>McCaldin, J. O. and McGill, T. C. (1980) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCCarms80">The metal-semiconductor interface</a>; Annual Review of Materials Science; Vol. 10; 65-83; <a href="https://doi.org/10.1146/annurev.ms.10.080180.000433">10.1146/annurev.ms.10.080180.000433</a></li> <li>Kuech, T. F. and McCaldin, J. O. (1980) <a href="https://resolver.caltech.edu/CaltechAUTHORS:KUEapl80">Confining substrate for micron-thick liquid films</a>; Applied Physics Letters; Vol. 37; No. 1; 44-46</li> <li>Scranton, R. A. and McCaldin, J. O. (1978) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120813-125643614">Dissolution of amorphous silicon into solid aluminum</a>; Journal of Vacuum Science and Technology; Vol. 15; No. 4; 1358-1361; <a href="https://doi.org/10.1116/1.569765">10.1116/1.569765</a></li> <li>Scranton, R. A. and Best, J. S., el al. (1977) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120809-111328673">Highly electronegative contacts to compound semiconductors</a>; Journal of Vacuum Science and Technology; Vol. 14; No. 4; 930-934; <a href="https://doi.org/10.1116/1.569391">10.1116/1.569391</a></li> <li>Best, J. S. and McCaldin, J. O., el al. (1976) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BESapl76">HgSe, a highly electronegative stable metallic contact for semiconductor devices</a>; Applied Physics Letters; Vol. 29; No. 7; 433-434; <a href="https://doi.org/10.1063/1.89109">10.1063/1.89109</a></li> <li>Scranton, R. A. and Mooney, J. B., el al. (1976) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120808-132551604">Highly electronegative metallic contacts to semiconductors using polymeric sulfur nitride</a>; Applied Physics Letters; Vol. 29; No. 1; 47-48; <a href="https://doi.org/10.1063/1.88868">10.1063/1.88868</a></li> <li>Boatright, R. L. and McCaldin, J. O. (1976) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120725-094120934">Rapid growth of Si by solid‐phase epitaxy, including comparisons to conventional Si crystal growth</a>; Journal of Vacuum Science and Technology; Vol. 13; No. 4; 938-939; <a href="https://doi.org/10.1116/1.569025">10.1116/1.569025</a></li> <li>McCaldin, J. O. and McGill, T. C., el al. (1976) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCCjvst76">Schottky barriers on compound semiconductors: The role of the anion</a>; Journal of Vacuum Science and Technology; Vol. 13; No. 4; 802-806; <a href="https://doi.org/10.1116/1.568993">10.1116/1.568993</a></li> <li>Boatright, R. L. and McCaldin, J. O. (1976) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BOAjap76">Solid-state growth of Si to produce planar surfaces</a>; Journal of Applied Physics; Vol. 47; No. 6; 2260-2262; <a href="https://doi.org/10.1063/1.323015">10.1063/1.323015</a></li> <li>McCaldin, J. O. and McGill, T. C., el al. (1976) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCCprl76">Correlation for III-V and II-VI Semiconductors of the Au Schottky Barrier Energy with Anion Electronegativity</a>; Physical Review Letters; Vol. 36; No. 1; 56-58; <a href="https://doi.org/10.1103/PhysRevLett.36.56">10.1103/PhysRevLett.36.56</a></li> <li>Best, John S. and McCaldin, J. O. (1975) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BESjap75">Interfacial impurities and the reaction between Si and evaporated Al</a>; Journal of Applied Physics; Vol. 46; No. 9; 4071-4072; <a href="https://doi.org/10.1063/1.322113">10.1063/1.322113</a></li> <li>McCaldin, J. O. (1974) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCCjvst74">Atom movements occurring at solid metal-semiconductor interfaces</a>; Journal of Vacuum Science and Technology; Vol. 11; No. 6; 990-995; <a href="https://doi.org/10.1116/1.1318718">10.1116/1.1318718</a></li> <li>Ottaviani, G. and Sigurd, D., el al. (1974) <a href="https://resolver.caltech.edu/CaltechAUTHORS:OTTjap74">Crystallization of Ge and Si in metal films. I</a>; Journal of Applied Physics; Vol. 45; No. 4; 1730-1739; <a href="https://doi.org/10.1063/1.1663483">10.1063/1.1663483</a></li> <li>Ottaviani, G. and Sigurd, D., el al. (1973) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150812-150608307">Crystal Growth of Silicon and Germanium in Metal Films</a>; Science; Vol. 180; No. 4089; 948-949; <a href="https://doi.org/10.1126/science.180.4089.948">10.1126/science.180.4089.948</a></li> <li>Sankur, H. and McCaldin, J. O., el al. (1973) <a href="https://resolver.caltech.edu/CaltechAUTHORS:SANapl73">Solid-phase epitaxial growth of Si mesas from Al metallization</a>; Applied Physics Letters; Vol. 22; No. 2; 64-66; <a href="https://doi.org/10.1063/1.1654558">10.1063/1.1654558</a></li> <li>Caywood, J. M. and Fern, A. M., el al. (1972) <a href="https://resolver.caltech.edu/CaltechAUTHORS:CAYapl72">Solid-Phase Growth of Ge from Evaporated Al Layer</a>; Applied Physics Letters; Vol. 20; No. 8; 326-327; <a href="https://doi.org/10.1063/1.1654170">10.1063/1.1654170</a></li> <li>McCaldin, J. O. and Sankur, H. (1972) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCCapl72">Precipitation of Si from the Al metallization of integrated circuits</a>; Applied Physics Letters; Vol. 20; No. 4; 171-172; <a href="https://doi.org/10.1063/1.1654096">10.1063/1.1654096</a></li> <li>McCaldin, J. O. and Sankur, H. (1971) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCCapl71">Diffusivity and Solubility of Si in the Al Metallization of Integrated Circuits</a>; Applied Physics Letters; Vol. 19; No. 12; 524-527; <a href="https://doi.org/10.1063/1.1653799">10.1063/1.1653799</a></li> <li>McCaldin, J. O. and Mayer, J. W. (1970) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCCapl70">Donor behavior in indium-alloyed silicon</a>; Applied Physics Letters; Vol. 17; No. 9; 365-366; <a href="https://doi.org/10.1063/1.1653436">10.1063/1.1653436</a></li> <li>Fong, Francis K. and Fenn, John B., Jr., el al. (1970) <a href="https://resolver.caltech.edu/CaltechAUTHORS:FONjcp70">Reactions in Crystalline Lattices: Chemistry of Lower Valence States of Lanthanides</a>; Journal of Chemical Physics; Vol. 53; No. 4; 1559-1565; <a href="https://doi.org/10.1063/1.1674213">10.1063/1.1674213</a></li> <li>McCaldin, J. O. (1965) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCCjap65">Solubility Interactions in Compensated, Heavily Doped Germanium</a>; Journal of Applied Physics; Vol. 36; No. 1; 211-213; <a href="https://doi.org/10.1063/1.1713878">10.1063/1.1713878</a></li> <li>McCaldin, J. O. and Widmer, A. E. (1964) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCCjap64">Differing results obtained in the doping of semiconductors by energetic ions</a>; Journal of Applied Physics; Vol. 35; No. 6; 1985-1986; <a href="https://doi.org/10.1063/1.1713787">10.1063/1.1713787</a></li> <li>McCaldin, J. O. (1963) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCCjap63">Solubility of Zinc in Gallium Arsenidem</a>; Journal of Applied Physics; Vol. 34; No. 6; 1748-1753; <a href="https://doi.org/10.1063/1.1702672">10.1063/1.1702672</a></li> <li>McCaldin, J. O. and Wittry, D. B. (1961) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCCjap61">Germanium Saturated with Gallium Antimonide</a>; Journal of Applied Physics; Vol. 32; No. 1; 65-69; <a href="https://doi.org/10.1063/1.1735962">10.1063/1.1735962</a></li> <li>McCaldin, J. O. and Harada, Roy (1960) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120920-094136745">Influence of Arsenic Pressure on the Doping of Gallium Arsenide with Germanium</a>; Journal of Applied Physics; Vol. 31; No. 11; 2065-2066; <a href="https://doi.org/10.1063/1.1735501">10.1063/1.1735501</a></li> <li>McCaldin, J. O. (1960) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120920-094154235">Interaction between Arsenic and Aluminum in Germanium</a>; Journal of Applied Physics; Vol. 31; No. 1; 89-94; <a href="https://doi.org/10.1063/1.1735425">10.1063/1.1735425</a></li> </ul>