Mayer, James W.
- Cheung, Woontong Nathan (1980) I. Channeling studies of silicon interfaces. II. Diffusion barrier properties of titanium nitride; 10.7907/e47n-cg57
- Tsaur, Bor-Yeu (1980) Ion-beam-induced modifications of thin film structures and formation of metastable phases; 10.7907/2v82-tm86
- Olowolafe, Johnson Olufemi (1977) Silicide formation and the interaction of metals with polycrystalline Si; 10.7907/JZBN-0V57
- Feng, Joseph Shao-Ying (1975) I. Stopping cross section additivity for O-2 MeV ^4He ions in solids. II. Magnetite thin films: fabrication and electrical properties; 10.7907/1C3P-AH34
- Marrello, Vincent (1975) Part I. Solid-Phase Growth of Germanium Structures. Part II. Condensation of Injected Electrons and Holes in Germanium; 10.7907/56z0-0h91
- Lee, Tsu-wei Frank (1975) Deep Levels and High Concentrations of Impurities in Silicon; 10.7907/j2rb-3s97
- Pashley, Richard Dana (1974) Electrical Properties of Ion Implanted Layers in Silicon and Gallium Arsenide; 10.7907/gat7-kp43
- Lugujjo, Eriabu (1974) I. Backscattering and Channeling Effect Studies on Semiconductor-Metal Systems. II. Low Temperature Migration of Silicon through Metal Films; 10.7907/0zd4-s880
- Bower, Robert William (1973) Reaction Kinetics of Pd and Ti-Al Films on Si; 10.7907/NY05-4E97
- Westmoreland, James Edward, III (1971) Channeling Effect Analysis of Lattice Disorder in Boron Implanted Silicon; 10.7907/K38Q-NC50
- Picraux, Samuel Thomas (1969) Channeling in Semiconductors and its Application to the Study of Ion Implantation; 10.7907/EBXR-QS35