<h1>Mayer, James W.</h1>
<h2>Book Chapter from <a href="https://data.caltech.edu">CaltechTHESIS advisor</a></h2>
<ul>
<li>Cheung, Woontong Nathan (1980) <a href="https://resolver.caltech.edu/CaltechETD:etd-10122006-090333">I. Channeling Studies of Silicon Interfaces. II. Diffusion Barrier Properties of Titanium Nitride</a>; <a href="https://doi.org/10.7907/e47n-cg57">10.7907/e47n-cg57</a></li>
<li>Tsaur, Bor-Yeu (1980) <a href="https://resolver.caltech.edu/CaltechETD:etd-10102006-094500">Ion-Beam-Induced Modifications of Thin Film Structures and Formation of Metastable Phases</a>; <a href="https://doi.org/10.7907/2v82-tm86">10.7907/2v82-tm86</a></li>
<li>Olowolafe, Johnson Olufemi (1977) <a href="https://resolver.caltech.edu/CaltechTHESIS:07212014-113955709">Silicide Formation and the Interaction of Metals with Polycrystalline Si</a>; <a href="https://doi.org/10.7907/JZBN-0V57">10.7907/JZBN-0V57</a></li>
<li>Marrello, Vincent (1975) <a href="https://resolver.caltech.edu/CaltechTHESIS:08312021-204039498">Part I. Solid-Phase Growth of Germanium Structures. Part II. Condensation of Injected Electrons and Holes in Germanium</a>; <a href="https://doi.org/10.7907/56z0-0h91">10.7907/56z0-0h91</a></li>
<li>Lee, Tsu-wei Frank (1975) <a href="https://resolver.caltech.edu/CaltechTHESIS:10122021-201307143">Deep Levels and High Concentrations of Impurities in Silicon</a>; <a href="https://doi.org/10.7907/j2rb-3s97">10.7907/j2rb-3s97</a></li>
<li>Feng, Joseph Shao-Ying (1975) <a href="https://resolver.caltech.edu/CaltechTHESIS:04062012-150944579">I. Stopping Cross Section Additivity for 0-2 MeV ⁴He Ions in Solids. II. Magnetite Thin Films: Fabrication and Electrical Properties</a>; <a href="https://doi.org/10.7907/1C3P-AH34">10.7907/1C3P-AH34</a></li>
<li>Lugujjo, Eriabu (1974) <a href="https://resolver.caltech.edu/CaltechTHESIS:01282021-190841642">I. Backscattering and Channeling Effect Studies on Semiconductor-Metal Systems. II. Low Temperature Migration of Silicon through Metal Films</a>; <a href="https://doi.org/10.7907/0zd4-s880">10.7907/0zd4-s880</a></li>
<li>Pashley, Richard Dana (1974) <a href="https://resolver.caltech.edu/CaltechTHESIS:03102021-184153613">Electrical Properties of Ion Implanted Layers in Silicon and Gallium Arsenide</a>; <a href="https://doi.org/10.7907/gat7-kp43">10.7907/gat7-kp43</a></li>
<li>Bower, Robert William (1973) <a href="https://resolver.caltech.edu/CaltechETD:etd-04122004-132122">Reaction Kinetics of Pd and Ti-Al Films on Si</a>; <a href="https://doi.org/10.7907/NY05-4E97">10.7907/NY05-4E97</a></li>
<li>Westmoreland, James Edward, III (1971) <a href="https://resolver.caltech.edu/CaltechTHESIS:08242017-130415823">Channeling Effect Analysis of Lattice Disorder in Boron Implanted Silicon</a>; <a href="https://doi.org/10.7907/K38Q-NC50">10.7907/K38Q-NC50</a></li>
<li>Picraux, Samuel Thomas (1969) <a href="https://resolver.caltech.edu/CaltechTHESIS:05102017-142717261">Channeling in Semiconductors and its Application to the Study of Ion Implantation</a>; <a href="https://doi.org/10.7907/EBXR-QS35">10.7907/EBXR-QS35</a></li>
</ul>