@article{https://resolver.caltech.edu/CaltechAUTHORS:STEapl98,
    title = "Deep-level transient spectroscopy of Si/Si1–x–yGexCy heterostructures",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:STEapl98",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.121935",
    volume = "73"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:CROjvstb98,
    title = "Stabilizing the surface morphology of Si1–x–yGexCy/Si heterostructures grown by molecular beam epitaxy through the use of a silicon-carbide source",
    journal = "Journal of Vacuum Science and Technology B",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:CROjvstb98",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.590111",
    volume = "16"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:STEjvstb98,
    title = "Electronic properties of Si/Si1–x–yGexCy heterojunctions",
    journal = "Journal of Vacuum Science and Technology B",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:STEjvstb98",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.589847",
    volume = "16"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:STEjvstb97,
    title = "Measurement of band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions",
    journal = "Journal of Vacuum Science and Technology B",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:STEjvstb97",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.589422",
    volume = "15"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:STEapl97,
    title = "Band offsets in Si/Si1–x–yGexCy heterojunctions measured by admittance spectroscopy",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:STEapl97",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.119188",
    volume = "70"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:HUNjap83,
    title = "Kinetics of TiSi2 formation by thin Ti films on Si",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:HUNjap83",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.332781",
    volume = "54"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:GRUjvst81,
    title = "Oxygen impurity effects at metal/silicide interfaces: Formation of silicon oxide and suboxides in the Ni/Si system",
    journal = "Journal of Vacuum Science and Technology",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:GRUjvst81",
    id = "record",
    issn = "0022-5355",
    doi = "10.1116/1.571078",
    volume = "19"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:TSAapl81,
    title = "Sequence of phase formation in planar metal-Si reaction couples",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:TSAapl81",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.92183",
    volume = "38"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:20120719-132031989,
    title = "XPS study of the chemical structure of the nickel/silicon interface",
    journal = "Journal of Vacuum Science and Technology",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120719-132031989",
    id = "record",
    issn = "0022-5355",
    doi = "10.1116/1.570618",
    volume = "17"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:20120726-092329135,
    title = "Influence of atomic mixing and preferential sputtering on depth profiles and interfaces",
    journal = "Journal of Vacuum Science and Technology",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120726-092329135",
    id = "record",
    issn = "0022-5355",
    doi = "10.1116/1.569883",
    volume = "16"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:20120802-072906574,
    title = "Limits of composition achievable by ion implantation",
    journal = "Journal of Vacuum Science and Technology",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120802-072906574",
    id = "record",
    issn = "0022-5355",
    doi = "10.1116/1.569820",
    volume = "15"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:LAUapl78b,
    title = "Heteroepitaxy of deposited amorphous layer by pulsed electron-beam irradiation",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:LAUapl78b",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.90310",
    volume = "33"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:LAUapl78a,
    title = "Epitaxial growth of deposited amorphous layer by laser annealing",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:LAUapl78a",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.90280",
    volume = "33"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:20201014-154015386,
    title = "Structure of crystallized layers by laser annealing of 〈100〉 and 〈111〉 self-implanted silicon samples",
    journal = "Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20201014-154015386",
    id = "record",
    issn = "0340-3793",
    doi = "10.1007/bf00886154",
    volume = "15"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:20120803-103105025,
    title = "Use of ion beams in space",
    journal = "Journal of Vacuum Science and Technology",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120803-103105025",
    id = "record",
    issn = "0022-5355",
    doi = "10.1116/1.569366",
    volume = "14"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:20120808-085747179,
    title = "Heterostructure by solid‐phase epitaxy in the Si〈111〉/Pd/Si (amorphous) system",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120808-085747179",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.323708",
    volume = "48"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:OLOjap76,
    title = "Formation kinetics of CrSi2 films on Si substrates with and without interposed Pd2Si layer",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:OLOjap76",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.322591",
    volume = "47"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:NAKjap76,
    title = "Interaction of metal layers with polycrystalline Si",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:NAKjap76",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.322826",
    volume = "47"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:NAKapl76,
    title = "Ti and V layers retard interaction between Al films and polycrystalline Si",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:NAKapl76",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.88734",
    volume = "28"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:LAUapl76,
    title = "Antimony doping of Si layers grown by solid-phase epitaxy",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:LAUapl76",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.88670",
    volume = "28"
}


@inbook{https://resolver.caltech.edu/CaltechAUTHORS:20180830-102916110,
    title = "Ion Beam Surface Layer Analysis",
    chapter = "Analysis of Ga\_(1-x)Al\_xAs-GaAs Heteroepitaxial Layers by Proton Backscattering",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20180830-102916110",
    id = "record",
    isbn = "978-1-4615-8878-8",
    doi = "10.1007/978-1-4615-8876-4\_32"
}


@inbook{https://resolver.caltech.edu/CaltechAUTHORS:20180830-103505467,
    title = "Ion Beam Surface Layer Analysis",
    chapter = "Determination of Stopping Cross Sections by Rutherford Backscattering",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20180830-103505467",
    id = "record",
    isbn = "978-1-4615-8878-8",
    doi = "10.1007/978-1-4615-8876-4\_4"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:NAKjap75,
    title = "Interaction of Al layers with polycrystalline Si",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:NAKjap75",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.321530",
    volume = "46"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:20151109-144638835,
    title = "Thin Films and Solid-Phase Reactions",
    journal = "Science",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20151109-144638835",
    id = "record",
    issn = "0036-8075",
    doi = "10.1126/science.190.4211.228",
    volume = "190"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:MALapl75,
    title = "Gamma–ray spectroscopy with single–carrier collection in high–resistivity semiconductors",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:MALapl75",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.88158",
    volume = "26"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:20120810-105957103,
    title = "Investigation of tellurium-implanted silicon",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120810-105957103",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.321347",
    volume = "46"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:20120803-104952611,
    title = "Backscattering spectrometry",
    journal = "Journal of Vacuum Science and Technology",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120803-104952611",
    id = "record",
    issn = "0022-5355",
    doi = "10.1116/1.568788",
    volume = "12"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:CHUapl74,
    title = "Identification of the dominant diffusing species in silicide formation",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:CHUapl74",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.1655546",
    volume = "25"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:20120809-110703213,
    title = "Kinetics of silicide formation by thin films of V on Si and SiO\_2 substrates",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120809-110703213",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.1663776",
    volume = "45"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:OTTjap74,
    title = "Crystallization of Ge and Si in metal films. I",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:OTTjap74",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.1663483",
    volume = "45"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:SIGjap74,
    title = "Crystallization of Ge and Si in metal films. II",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:SIGjap74",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.1663484",
    volume = "45"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:20120803-110024013,
    title = "Analysis of thin-film structures with nuclear backscattering
 and x-ray diffraction",
    journal = "Journal of Vacuum Science and Technology",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120803-110024013",
    id = "record",
    issn = "0022-5355",
    doi = "10.1116/1.1318668",
    volume = "11"
}


@inbook{https://resolver.caltech.edu/CaltechAUTHORS:20170809-160158554,
    chapter = "Ion implantation in semiconductors",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20170809-160158554",
    id = "record",
    doi = "10.1109/IEDM.1973.188633"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:MARprl73,
    title = "Condensation of Injected Electrons and Holes in Germanium",
    journal = "Physical Review Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:MARprl73",
    id = "record",
    issn = "0031-9007",
    doi = "10.1103/PhysRevLett.31.593",
    volume = "31"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:20150812-150608307,
    title = "Crystal Growth of Silicon and Germanium in Metal Films",
    journal = "Science",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20150812-150608307",
    id = "record",
    issn = "0036-8075",
    doi = "10.1126/science.180.4089.948",
    volume = "180"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:20151111-095217502,
    title = "Microanalysis of Materials by Backscattering Spectrometry",
    journal = "Science",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20151111-095217502",
    id = "record",
    issn = "0036-8075",
    doi = "10.1126/science.177.4052.841",
    volume = "177"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:OTTapl72,
    title = "Formation of Injecting and Blocking Contacts on High-Resistivity Germanium",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:OTTapl72",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.1654169",
    volume = "20"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:HIRapl71,
    title = "Low-temperature migration of silicon in thin layers of gold platinum",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:HIRapl71",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.1653615",
    volume = "18"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:MCCapl70,
    title = "Donor behavior in indium-alloyed silicon",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:MCCapl70",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.1653436",
    volume = "17"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:20151007-161136079,
    title = "Influence of carrier diffusion effects on window thickness of semiconductor detectors",
    journal = "Nuclear Instruments and Methods",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20151007-161136079",
    id = "record",
    issn = "0029-554X",
    doi = "10.1016/0029-554X(70)90159-X",
    volume = "79"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:20151008-165307664,
    title = "Origin of Field Dependent Collection Efficiency In Contact Limited Devices",
    journal = "Helvetica Physica Acta",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20151008-165307664",
    id = "record",
    issn = "0018-0238",
    volume = "42"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:20151211-155449249,
    title = "Ion Implantation Studies in Silicon",
    journal = "Science",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20151211-155449249",
    id = "record",
    issn = "0036-8075",
    doi = "10.1126/science.163.3868.627",
    volume = "163"
}