<h1>Mayer, James W.</h1>
<h2>Article from <a href="https://authors.library.caltech.edu">CaltechAUTHORS</a></h2>
<ul>
<li>Stein, B. L. and Yu, E. T., el al. (1998) <a href="https://resolver.caltech.edu/CaltechAUTHORS:STEapl98">Deep-level transient spectroscopy of Si/Si1–x–yGexCy heterostructures</a>; Applied Physics Letters; Vol. 73; No. 5; 647-649; <a href="https://doi.org/10.1063/1.121935">10.1063/1.121935</a></li>
<li>Croke, E. T. and Vajo, J. J., el al. (1998) <a href="https://resolver.caltech.edu/CaltechAUTHORS:CROjvstb98">Stabilizing the surface morphology of Si1–x–yGexCy/Si heterostructures grown by molecular beam epitaxy through the use of a silicon-carbide source</a>; Journal of Vacuum Science and Technology B; Vol. 16; No. 4; 1937-1942; <a href="https://doi.org/10.1116/1.590111">10.1116/1.590111</a></li>
<li>Stein, B. L. and Yu, E. T., el al. (1998) <a href="https://resolver.caltech.edu/CaltechAUTHORS:STEjvstb98">Electronic properties of Si/Si1–x–yGexCy heterojunctions</a>; Journal of Vacuum Science and Technology B; Vol. 16; No. 3; 1639-1643; <a href="https://doi.org/10.1116/1.589847">10.1116/1.589847</a></li>
<li>Stein, B. L. and Yu, E. T., el al. (1997) <a href="https://resolver.caltech.edu/CaltechAUTHORS:STEjvstb97">Measurement of band offsets in Si/Si1–xGex and Si/Si1–x–yGexCy heterojunctions</a>; Journal of Vacuum Science and Technology B; Vol. 15; No. 4; 1108-1111; <a href="https://doi.org/10.1116/1.589422">10.1116/1.589422</a></li>
<li>Stein, B. L. and Yu, E. T., el al. (1997) <a href="https://resolver.caltech.edu/CaltechAUTHORS:STEapl97">Band offsets in Si/Si1–x–yGexCy heterojunctions measured by admittance spectroscopy</a>; Applied Physics Letters; Vol. 70; No. 25; 3413-3415; <a href="https://doi.org/10.1063/1.119188">10.1063/1.119188</a></li>
<li>Hung, L. S. and Gyulai, J., el al. (1983) <a href="https://resolver.caltech.edu/CaltechAUTHORS:HUNjap83">Kinetics of TiSi2 formation by thin Ti films on Si</a>; Journal of Applied Physics; Vol. 54; No. 9; 5076-5080; <a href="https://doi.org/10.1063/1.332781">10.1063/1.332781</a></li>
<li>Grunthaner, P. J. and Grunthaner, F. J., el al. (1981) <a href="https://resolver.caltech.edu/CaltechAUTHORS:GRUjvst81">Oxygen impurity effects at metal/silicide interfaces: Formation of silicon oxide and suboxides in the Ni/Si system</a>; Journal of Vacuum Science and Technology; Vol. 19; No. 3; 641-648; <a href="https://doi.org/10.1116/1.571078">10.1116/1.571078</a></li>
<li>Tsaur, B. Y. and Lau, S. S., el al. (1981) <a href="https://resolver.caltech.edu/CaltechAUTHORS:TSAapl81">Sequence of phase formation in planar metal-Si reaction couples</a>; Applied Physics Letters; Vol. 38; No. 11; 922-924; <a href="https://doi.org/10.1063/1.92183">10.1063/1.92183</a></li>
<li>Grunthaner, P. J. and Grunthaner, F. J., el al. (1980) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120719-132031989">XPS study of the chemical structure of the nickel/silicon interface</a>; Journal of Vacuum Science and Technology; Vol. 17; No. 5; 924-929; <a href="https://doi.org/10.1116/1.570618">10.1116/1.570618</a></li>
<li>Liau, Z. L. and Tsaur, B. Y., el al. (1979) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120726-092329135">Influence of atomic mixing and preferential sputtering on depth profiles and interfaces</a>; Journal of Vacuum Science and Technology; Vol. 16; No. 2; 121-127; <a href="https://doi.org/10.1116/1.569883">10.1116/1.569883</a></li>
<li>Liau, Z. L. and Mayer, J. W. (1978) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120802-072906574">Limits of composition achievable by ion implantation</a>; Journal of Vacuum Science and Technology; Vol. 15; No. 5; 1629-1635; <a href="https://doi.org/10.1116/1.569820">10.1116/1.569820</a></li>
<li>Lau, S. S. and Tseng, W. F., el al. (1978) <a href="https://resolver.caltech.edu/CaltechAUTHORS:LAUapl78b">Heteroepitaxy of deposited amorphous layer by pulsed electron-beam irradiation</a>; Applied Physics Letters; Vol. 33; No. 3; 235-237; <a href="https://doi.org/10.1063/1.90310">10.1063/1.90310</a></li>
<li>Lau, S. S. and Tseng, W. F., el al. (1978) <a href="https://resolver.caltech.edu/CaltechAUTHORS:LAUapl78a">Epitaxial growth of deposited amorphous layer by laser annealing</a>; Applied Physics Letters; Vol. 33; No. 2; 130-131; <a href="https://doi.org/10.1063/1.90280">10.1063/1.90280</a></li>
<li>Foti, G. and Rimini, E., el al. (1978) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20201014-154015386">Structure of crystallized layers by laser annealing of 〈100〉 and 〈111〉 self-implanted silicon samples</a>; Applied Physics; Vol. 15; No. 4; 365-369; <a href="https://doi.org/10.1007/bf00886154">10.1007/bf00886154</a></li>
<li>Mayer, James W. and Kullen, R. Philip, el al. (1977) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120803-103105025">Use of ion beams in space</a>; Journal of Vacuum Science and Technology; Vol. 14; No. 6; 1281; <a href="https://doi.org/10.1116/1.569366">10.1116/1.569366</a></li>
<li>Lau, S. S. and Liau, Z. L., el al. (1977) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120808-085747179">Heterostructure by solid‐phase epitaxy in the Si〈111〉/Pd/Si (amorphous) system</a>; Journal of Applied Physics; Vol. 48; No. 3; 917-919; <a href="https://doi.org/10.1063/1.323708">10.1063/1.323708</a></li>
<li>Olowolafe, J. O. and Nicolet, M.-A., el al. (1976) <a href="https://resolver.caltech.edu/CaltechAUTHORS:OLOjap76">Formation kinetics of CrSi2 films on Si substrates with and without interposed Pd2Si layer</a>; Journal of Applied Physics; Vol. 47; No. 12; 5182-5186; <a href="https://doi.org/10.1063/1.322591">10.1063/1.322591</a></li>
<li>Nakamura, K. and Olowolafe, J. O., el al. (1976) <a href="https://resolver.caltech.edu/CaltechAUTHORS:NAKjap76">Interaction of metal layers with polycrystalline Si</a>; Journal of Applied Physics; Vol. 47; No. 4; 1278-1283; <a href="https://doi.org/10.1063/1.322826">10.1063/1.322826</a></li>
<li>Nakamura, K. and Lau, S. S., el al. (1976) <a href="https://resolver.caltech.edu/CaltechAUTHORS:NAKapl76">Ti and V layers retard interaction between Al films and polycrystalline Si</a>; Applied Physics Letters; Vol. 28; No. 5; 277-280; <a href="https://doi.org/10.1063/1.88734">10.1063/1.88734</a></li>
<li>Lau, S. S. and Canali, C., el al. (1976) <a href="https://resolver.caltech.edu/CaltechAUTHORS:LAUapl76">Antimony doping of Si layers grown by solid-phase epitaxy</a>; Applied Physics Letters; Vol. 28; No. 3; 148-150; <a href="https://doi.org/10.1063/1.88670">10.1063/1.88670</a></li>
<li>Nakamura, K. and Nicolet, M-A., el al. (1975) <a href="https://resolver.caltech.edu/CaltechAUTHORS:NAKjap75">Interaction of Al layers with polycrystalline Si</a>; Journal of Applied Physics; Vol. 46; No. 11; 4678-4684; <a href="https://doi.org/10.1063/1.321530">10.1063/1.321530</a></li>
<li>Mayer, James W. and Poate, John M., el al. (1975) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20151109-144638835">Thin Films and Solid-Phase Reactions</a>; Science; Vol. 190; No. 4211; 228-234; <a href="https://doi.org/10.1126/science.190.4211.228">10.1126/science.190.4211.228</a></li>
<li>Malm, H. L. and Canali, C., el al. (1975) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MALapl75">Gamma–ray spectroscopy with single–carrier collection in high–resistivity semiconductors</a>; Applied Physics Letters; Vol. 26; No. 6; 344-346; <a href="https://doi.org/10.1063/1.88158">10.1063/1.88158</a></li>
<li>Lee, T. F. and Pashley, R. D., el al. (1975) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120810-105957103">Investigation of tellurium-implanted silicon</a>; Journal of Applied Physics; Vol. 46; No. 1; 381-388; <a href="https://doi.org/10.1063/1.321347">10.1063/1.321347</a></li>
<li>Mayer, J. W. and Nicolet, M-A., el al. (1975) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120803-104952611">Backscattering spectrometry</a>; Journal of Vacuum Science and Technology; Vol. 12; No. 1; 356; <a href="https://doi.org/10.1116/1.568788">10.1116/1.568788</a></li>
<li>Chu, W. K. and Kraütle, H., el al. (1974) <a href="https://resolver.caltech.edu/CaltechAUTHORS:CHUapl74">Identification of the dominant diffusing species in silicide formation</a>; Applied Physics Letters; Vol. 25; No. 8; 454-457; <a href="https://doi.org/10.1063/1.1655546">10.1063/1.1655546</a></li>
<li>Kräutle, H. and Nicolet, M-A., el al. (1974) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120809-110703213">Kinetics of silicide formation by thin films of V on Si and SiO_2 substrates</a>; Journal of Applied Physics; Vol. 45; No. 8; 3304-3308; <a href="https://doi.org/10.1063/1.1663776">10.1063/1.1663776</a></li>
<li>Ottaviani, G. and Sigurd, D., el al. (1974) <a href="https://resolver.caltech.edu/CaltechAUTHORS:OTTjap74">Crystallization of Ge and Si in metal films. I</a>; Journal of Applied Physics; Vol. 45; No. 4; 1730-1739; <a href="https://doi.org/10.1063/1.1663483">10.1063/1.1663483</a></li>
<li>Sigurd, D. and Ottaviani, G., el al. (1974) <a href="https://resolver.caltech.edu/CaltechAUTHORS:SIGjap74">Crystallization of Ge and Si in metal films. II</a>; Journal of Applied Physics; Vol. 45; No. 4; 1740-1745; <a href="https://doi.org/10.1063/1.1663484">10.1063/1.1663484</a></li>
<li>Mayer, J. W. and Tu, K. N. (1974) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120803-110024013">Analysis of thin-film structures with nuclear backscattering
and x-ray diffraction</a>; Journal of Vacuum Science and Technology; Vol. 11; No. 1; 86-93; <a href="https://doi.org/10.1116/1.1318668">10.1116/1.1318668</a></li>
<li>Marrello, V. and Lee, T. F., el al. (1973) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MARprl73">Condensation of Injected Electrons and Holes in Germanium</a>; Physical Review Letters; Vol. 31; No. 9; 593-594; <a href="https://doi.org/10.1103/PhysRevLett.31.593">10.1103/PhysRevLett.31.593</a></li>
<li>Ottaviani, G. and Sigurd, D., el al. (1973) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150812-150608307">Crystal Growth of Silicon and Germanium in Metal Films</a>; Science; Vol. 180; No. 4089; 948-949; <a href="https://doi.org/10.1126/science.180.4089.948">10.1126/science.180.4089.948</a></li>
<li>Nicolet, M.-A. and Mayer, J. W., el al. (1972) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20151111-095217502">Microanalysis of Materials by Backscattering Spectrometry</a>; Science; Vol. 177; No. 4052; 841-849; <a href="https://doi.org/10.1126/science.177.4052.841">10.1126/science.177.4052.841</a></li>
<li>Ottaviani, G. and Marrello, V., el al. (1972) <a href="https://resolver.caltech.edu/CaltechAUTHORS:OTTapl72">Formation of Injecting and Blocking Contacts on High-Resistivity Germanium</a>; Applied Physics Letters; Vol. 20; No. 8; 323-325; <a href="https://doi.org/10.1063/1.1654169">10.1063/1.1654169</a></li>
<li>Hiraki, A. and Nicolet, M-A., el al. (1971) <a href="https://resolver.caltech.edu/CaltechAUTHORS:HIRapl71">Low-temperature migration of silicon in thin layers of gold platinum</a>; Applied Physics Letters; Vol. 18; No. 5; 178-181; <a href="https://doi.org/10.1063/1.1653615">10.1063/1.1653615</a></li>
<li>McCaldin, J. O. and Mayer, J. W. (1970) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MCCapl70">Donor behavior in indium-alloyed silicon</a>; Applied Physics Letters; Vol. 17; No. 9; 365-366; <a href="https://doi.org/10.1063/1.1653436">10.1063/1.1653436</a></li>
<li>Caywood, J. M. and Mead, C. A., el al. (1970) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20151007-161136079">Influence of carrier diffusion effects on window thickness of semiconductor detectors</a>; Nuclear Instruments and Methods; Vol. 79; No. 2; 329-332; <a href="https://doi.org/10.1016/0029-554X(70)90159-X">10.1016/0029-554X(70)90159-X</a></li>
<li>Caywood, J. M. and Mead, C. A., el al. (1969) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20151008-165307664">Origin of Field Dependent Collection Efficiency In Contact Limited Devices</a>; Helvetica Physica Acta; Vol. 42; No. 7-8; 948</li>
<li>Eriksson, L. and Davies, J. A., el al. (1969) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20151211-155449249">Ion Implantation Studies in Silicon</a>; Science; Vol. 163; No. 3868; 627-633; <a href="https://doi.org/10.1126/science.163.3868.627">10.1126/science.163.3868.627</a></li>
</ul>