[ { "id": "authors:18g3b-gcv30", "collection": "authors", "collection_id": "18g3b-gcv30", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20190829-100210861", "type": "book_section", "title": "Imaging Multimode Vibrations in High-Frequency Aluminum Nitride Piezoelectric Nanomembrane Resonators", "book_title": "2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)", "author": [ { "family_name": "Jia", "given_name": "Hao", "clpid": "Jia-Hao" }, { "family_name": "Matheny", "given_name": "Matthew H.", "orcid": "0000-0002-3488-1083", "clpid": "Matheny-M-H" }, { "family_name": "Roukes", "given_name": "Michael L.", "orcid": "0000-0002-2916-6026", "clpid": "Roukes-M-L" }, { "family_name": "Feng", "given_name": "Philip X.-L.", "orcid": "0000-0002-1083-2391", "clpid": "Feng-Philip-Xiao-Li" } ], "abstract": "We report on the first imaging and visualization of the multimode resonant behaviors of aluminum nitride (AlN) piezoelectric nanomembrane resonators, by exploiting a spectromicroscopy technique based on scanning laser interferometry. High-frequency multimode vibrations (up to 33MHz) with quality (Q) factors up to ~8500 are observed in the AlN nanomembranes. Both undriven thermomechanical and coherently excited vibrations of the devices are measured and spatially mapped. Such a multimode AlN device platform with abundant resonant modes, two-dimensional (2D) large capturing surfaces, and efficient all-electrical signal transduction, holds strong promise for enabling ultrasensitive gravimetric detection, mass spectroscopy, and inertial imaging.", "doi": "10.1109/transducers.2019.8808643", "isbn": "9781538681046", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "2019-06", "pages": "442-445" }, { "id": "authors:4v0cg-68636", "collection": "authors", "collection_id": "4v0cg-68636", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20191025-124827590", "type": "book_section", "title": "AlN Piezoelectric Nanoelectromechanical Isolator via Parametric Frequency Conversion and Amplification", "book_title": "2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems (MEMS)", "author": [ { "family_name": "Lee", "given_name": "Jaesung", "clpid": "Lee-Jaesung" }, { "family_name": "Matheny", "given_name": "Matthew H.", "orcid": "0000-0002-3488-1083", "clpid": "Matheny-M-H" }, { "family_name": "Roukes", "given_name": "Michael L.", "orcid": "0000-0002-2916-6026", "clpid": "Roukes-M-L" }, { "family_name": "Feng", "given_name": "Philip X.-L.", "orcid": "0000-0002-1083-2391", "clpid": "Feng-Philip-Xiao-Li" } ], "abstract": "We report on a novel aluminum nitride (AlN) resonant nanoelectromechanical systems (NEMS) approach to realizing an electrically tunable nonreciprocal isolator by exploiting nonlinear parametric frequency conversion and efficient mechanical amplification in a radio-frequency (RF) AlN membrane NEMS resonator. The isolator is constructed by combining frequency conversion enabled by the NEMS resonator's strong parametric effect, and tandem band-pass filtering, so that the signal can be transmitted or blocked according to its propagation direction and frequency. In the band of the isolator that is set by the NEMS resonance, it exhibits up to \u223c60dB signal isolation between measured S\u2082\u2081 and S\u2081\u2082 transmission. Further, the isolation band frequency and width can be tuned via a dc polarization voltage.", "doi": "10.1109/memsys.2019.8870624", "isbn": "9781728116105", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "2019-01", "pages": "879-882" }, { "id": "authors:ra75q-2t214", "collection": "authors", "collection_id": "ra75q-2t214", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20100830-101323664", "type": "article", "title": "Low Voltage Nanoelectromechanical Switches Based on Silicon Carbide Nanowires", "author": [ { "family_name": "Feng", "given_name": "X. L.", "orcid": "0000-0002-1083-2391", "clpid": "Feng-Philip-Xiao-Li" }, { "family_name": "Matheny", "given_name": "M. H.", "orcid": "0000-0002-3488-1083", "clpid": "Matheny-M-H" }, { "family_name": "Zorman", "given_name": "C. A.", "clpid": "Zorman-C-A" }, { "family_name": "Mehregany", "given_name": "M.", "clpid": "Mehregany-M" }, { "family_name": "Roukes", "given_name": "M. L.", "orcid": "0000-0002-2916-6026", "clpid": "Roukes-M-L" } ], "abstract": "We report experimental demonstrations of electrostatically actuated, contact-mode nanoelectromechanical switches based on very thin silicon carbide (SiC) nanowires (NWs). These NWs are lithographically patterned from a 50 nm thick SiC layer heteroepitaxially grown on single-crystal silicon (Si). Several generic designs of in-plane electrostatic SiC NW switches have been realized, with NW widths as small as ~20 nm and lateral switching gaps as narrow as ~10 nm. Very low switch-on voltages are obtained, from a few volts down to ~1 V level. Two-terminal, contact-mode \"hot\" switching with high on/off ratios (>10^2 or 10^3) has been demonstrated repeatedly for many devices. We find enhanced switching performance in bare SiC NWs, with lifetimes exceeding those based on metallized SiC NWs.", "doi": "10.1021/nl1009734", "issn": "1530-6984", "publisher": "American Chemical Society", "publication": "Nano Letters", "publication_date": "2010-08", "series_number": "8", "volume": "10", "issue": "8", "pages": "2891-2896" }, { "id": "authors:q2k7a-31n57", "collection": "authors", "collection_id": "q2k7a-31n57", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20091001-140129826", "type": "article", "title": "Piezoelectric nanoelectromechanical resonators based on aluminum nitride thin films", "author": [ { "family_name": "Karabalin", "given_name": "R. B.", "clpid": "Karabalin-R-B" }, { "family_name": "Matheny", "given_name": "M. H.", "orcid": "0000-0002-3488-1083", "clpid": "Matheny-M-H" }, { "family_name": "Feng", "given_name": "X. L.", "orcid": "0000-0002-1083-2391", "clpid": "Feng-Philip-Xiao-Li" }, { "family_name": "Defa\u00ff", "given_name": "E.", "clpid": "Defa\u00ff-E" }, { "family_name": "Le-Rhun", "given_name": "G.", "clpid": "Le-Rhun-G" }, { "family_name": "Marcoux", "given_name": "C.", "clpid": "Marcoux-C" }, { "family_name": "Hentz", "given_name": "S.", "orcid": "0000-0003-0479-9027", "clpid": "Hentz-S" }, { "family_name": "Andreucci", "given_name": "P.", "clpid": "Andreucci-P" }, { "family_name": "Roukes", "given_name": "M. L.", "orcid": "0000-0002-2916-6026", "clpid": "Roukes-M-L" } ], "abstract": "We demonstrate piezoelectrically actuated, electrically tunable nanomechanical resonators based on multilayers containing a 100-nm-thin aluminum nitride (AlN) layer. Efficient piezoelectric actuation of very high frequency fundamental flexural modes up to ~80 MHz is demonstrated at room temperature. Thermomechanical fluctuations of AlN cantilevers measured by optical interferometry enable calibration of the transduction responsivity and displacement sensitivities of the resonators. Measurements and analyses show that the 100 nm AlN layer employed has an excellent piezoelectric coefficient, d_(31)=2.4 pm/V. Doubly clamped AlN beams exhibit significant frequency tuning behavior with applied dc voltage.", "doi": "10.1063/1.3216586", "issn": "0003-6951", "publisher": "American Institute of Physics", "publication": "Applied Physics Letters", "publication_date": "2009-09-07", "series_number": "10", "volume": "95", "issue": "10", "pages": "Art. No. 103111" } ]