[
    {
        "id": "authors:ra75q-2t214",
        "collection": "authors",
        "collection_id": "ra75q-2t214",
        "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20100830-101323664",
        "type": "article",
        "title": "Low Voltage Nanoelectromechanical Switches Based on Silicon Carbide Nanowires",
        "author": [
            {
                "family_name": "Feng",
                "given_name": "X. L.",
                "orcid": "0000-0002-1083-2391",
                "clpid": "Feng-Philip-Xiao-Li"
            },
            {
                "family_name": "Matheny",
                "given_name": "M. H.",
                "orcid": "0000-0002-3488-1083",
                "clpid": "Matheny-M-H"
            },
            {
                "family_name": "Zorman",
                "given_name": "C. A.",
                "clpid": "Zorman-C-A"
            },
            {
                "family_name": "Mehregany",
                "given_name": "M.",
                "clpid": "Mehregany-M"
            },
            {
                "family_name": "Roukes",
                "given_name": "M. L.",
                "orcid": "0000-0002-2916-6026",
                "clpid": "Roukes-M-L"
            }
        ],
        "abstract": "We report experimental demonstrations of electrostatically actuated, contact-mode nanoelectromechanical switches based on very thin silicon carbide (SiC) nanowires (NWs). These NWs are lithographically patterned from a 50 nm thick SiC layer heteroepitaxially grown on single-crystal silicon (Si). Several generic designs of in-plane electrostatic SiC NW switches have been realized, with NW widths as small as ~20 nm and lateral switching gaps as narrow as ~10 nm. Very low switch-on voltages are obtained, from a few volts down to ~1 V level. Two-terminal, contact-mode \"hot\" switching with high on/off ratios (>10^2 or 10^3) has been demonstrated repeatedly for many devices. We find enhanced switching performance in bare SiC NWs, with lifetimes exceeding those based on metallized SiC NWs.",
        "doi": "10.1021/nl1009734",
        "issn": "1530-6984",
        "publisher": "American Chemical Society",
        "publication": "Nano Letters",
        "publication_date": "2010-08",
        "series_number": "8",
        "volume": "10",
        "issue": "8",
        "pages": "2891-2896"
    },
    {
        "id": "authors:q2k7a-31n57",
        "collection": "authors",
        "collection_id": "q2k7a-31n57",
        "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20091001-140129826",
        "type": "article",
        "title": "Piezoelectric nanoelectromechanical resonators based on aluminum nitride thin films",
        "author": [
            {
                "family_name": "Karabalin",
                "given_name": "R. B.",
                "clpid": "Karabalin-R-B"
            },
            {
                "family_name": "Matheny",
                "given_name": "M. H.",
                "orcid": "0000-0002-3488-1083",
                "clpid": "Matheny-M-H"
            },
            {
                "family_name": "Feng",
                "given_name": "X. L.",
                "orcid": "0000-0002-1083-2391",
                "clpid": "Feng-Philip-Xiao-Li"
            },
            {
                "family_name": "Defa\u00ff",
                "given_name": "E.",
                "clpid": "Defa\u00ff-E"
            },
            {
                "family_name": "Le-Rhun",
                "given_name": "G.",
                "clpid": "Le-Rhun-G"
            },
            {
                "family_name": "Marcoux",
                "given_name": "C.",
                "clpid": "Marcoux-C"
            },
            {
                "family_name": "Hentz",
                "given_name": "S.",
                "orcid": "0000-0003-0479-9027",
                "clpid": "Hentz-S"
            },
            {
                "family_name": "Andreucci",
                "given_name": "P.",
                "clpid": "Andreucci-P"
            },
            {
                "family_name": "Roukes",
                "given_name": "M. L.",
                "orcid": "0000-0002-2916-6026",
                "clpid": "Roukes-M-L"
            }
        ],
        "abstract": "We demonstrate piezoelectrically actuated, electrically tunable nanomechanical resonators based on multilayers containing a 100-nm-thin aluminum nitride (AlN) layer. Efficient piezoelectric actuation of very high frequency fundamental flexural modes up to ~80  MHz is demonstrated at room temperature. Thermomechanical fluctuations of AlN cantilevers measured by optical interferometry enable calibration of the transduction responsivity and displacement sensitivities of the resonators. Measurements and analyses show that the 100 nm AlN layer employed has an excellent piezoelectric coefficient, d_(31)=2.4  pm/V. Doubly clamped AlN beams exhibit significant frequency tuning behavior with applied dc voltage.",
        "doi": "10.1063/1.3216586",
        "issn": "0003-6951",
        "publisher": "American Institute of Physics",
        "publication": "Applied Physics Letters",
        "publication_date": "2009-09-07",
        "series_number": "10",
        "volume": "95",
        "issue": "10",
        "pages": "Art. No. 103111"
    }
]