[
    {
        "id": "authors:52jke-fnj64",
        "collection": "authors",
        "collection_id": "52jke-fnj64",
        "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20150520-093826100",
        "type": "article",
        "title": "Control of protein phosphatase I in the dendrite",
        "author": [
            {
                "family_name": "Allen",
                "given_name": "P. B.",
                "clpid": "Allen-P-B"
            },
            {
                "family_name": "Hsieh-Wilson",
                "given_name": "Linda C.",
                "orcid": "0000-0001-5661-1714",
                "clpid": "Hsieh-Wilson-L-C"
            },
            {
                "family_name": "Yan",
                "given_name": "Z.",
                "clpid": "Yan-Z"
            },
            {
                "family_name": "Feng",
                "given_name": "J.",
                "clpid": "Feng-J"
            },
            {
                "family_name": "Ouimet",
                "given_name": "C. C.",
                "clpid": "Ouimet-C-C"
            },
            {
                "family_name": "Greengard",
                "given_name": "P.",
                "clpid": "Greengard-P"
            }
        ],
        "abstract": "Communication between nerve cells is mediated\nby both electrical and chemical signals. Chemical\nneurotransmission can be further categorized into\nfast and slow components. Fast acting neurotransmitters\ndirectly influence neuronal electrical excitability\nby binding to cell surface receptors which serve as ligand-gated ion channels, thereby directly modulating membrane potential and cell firing. Neurotransmitter receptors may otherwise modulate neuronal excitability indirectly, by coupling to intracellular signalling pathways that impact on the functional activity of ligand- and voltage-gated ion channels, ion pumps, and the machinery for chemical neurotransmission. These indirect\nactions are relatively slow, and often involve cascades of protein phosphorylation which serve to alter the biochemical activities of substrate proteins, and hence cellular physiology.",
        "doi": "10.1042/bst0270543",
        "issn": "1470-8752",
        "publisher": "Biochemical Society",
        "publication": "Biochemical Society Transactions",
        "publication_date": "1999-08",
        "series_number": "4",
        "volume": "27",
        "issue": "4",
        "pages": "543-546"
    },
    {
        "id": "authors:093ek-k2124",
        "collection": "authors",
        "collection_id": "093ek-k2124",
        "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:CHEel95",
        "type": "article",
        "title": "Parametric study of cavity length and mirror reflectivity in ultralow threshold quantum well InGaAs/AlGaAs lasers",
        "author": [
            {
                "family_name": "Chen",
                "given_name": "T. R.",
                "clpid": "Chen-T-R"
            },
            {
                "family_name": "Zhao",
                "given_name": "B.",
                "orcid": "0000-0001-8438-9188",
                "clpid": "Zhao-Bin"
            },
            {
                "family_name": "Eng",
                "given_name": "L.",
                "clpid": "Eng-L"
            },
            {
                "family_name": "Feng",
                "given_name": "J.",
                "clpid": "Feng-J"
            },
            {
                "family_name": "Zhuang",
                "given_name": "Y. H.",
                "clpid": "Zhuang-Y-H"
            },
            {
                "family_name": "Yariv",
                "given_name": "A.",
                "clpid": "Yariv-A"
            }
        ],
        "abstract": "Record low CW threshold currents of 16 \u03bcA at-room temperature and 21 \u03bcA at cryogenic temperature have been demonstrated in buried heterostructure strained layer, single quantum well InGaAs/AlGaAs lasers with a short cavity length and high reflectivity coatings.",
        "doi": "10.1049/el:19950176",
        "issn": "0013-5194",
        "publisher": "Institute of Electrical Engineers",
        "publication": "Electronics Letters",
        "publication_date": "1995-02-16",
        "series_number": "4",
        "volume": "31",
        "issue": "4",
        "pages": "285-287"
    }
]