[
    {
        "id": "authors:xx8hv-zax08",
        "collection": "authors",
        "collection_id": "xx8hv-zax08",
        "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20170706-105425483",
        "type": "article",
        "title": "Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass",
        "author": [
            {
                "family_name": "Emmer",
                "given_name": "Hal",
                "clpid": "Emmer-Hal-S"
            },
            {
                "family_name": "Chen",
                "given_name": "Christopher T.",
                "orcid": "0000-0001-5848-961X",
                "clpid": "Chen-Christopher-T"
            },
            {
                "family_name": "Saive",
                "given_name": "Rebecca",
                "orcid": "0000-0001-7420-9155",
                "clpid": "Saive-Rebecca"
            },
            {
                "family_name": "Friedrich",
                "given_name": "Dennis",
                "orcid": "0000-0003-4844-368X",
                "clpid": "Friedrich-Dennis"
            },
            {
                "family_name": "Horie",
                "given_name": "Yu",
                "orcid": "0000-0001-7083-1270",
                "clpid": "Horie-Yu"
            },
            {
                "family_name": "Arbabi",
                "given_name": "Amir",
                "orcid": "0000-0001-8831-7552",
                "clpid": "Arbabi-Amir"
            },
            {
                "family_name": "Faraon",
                "given_name": "Andrei",
                "orcid": "0000-0002-8141-391X",
                "clpid": "Faraon-A"
            },
            {
                "family_name": "Atwater",
                "given_name": "Harry A.",
                "orcid": "0000-0001-9435-0201",
                "clpid": "Atwater-H-A"
            }
        ],
        "abstract": "Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal material for photonic structures targeted at the visible wavelengths. However, these properties are only realized with high quality epitaxial growth, which limits substrate choice and thus possible photonic applications. In this work, we report the fabrication of single crystal gallium phosphide thin films on transparent glass substrates via transfer bonding. GaP thin films on Si (001) and (112) grown by MOCVD are bonded to glass, and then the growth substrate is removed with a XeF_2 vapor etch. The resulting GaP films have surface roughnesses below 1\u2009nm RMS and exhibit room temperature band edge photoluminescence. Magnesium doping yielded p-type films with a carrier density of 1.6\u2009\u00d7\u200910^(17)\u2009cm^(\u22123) that exhibited mobilities as high as 16 cm^2V^(\u22121)s^(\u22121). Due to their unique optical properties, these films hold much promise for use in advanced optical devices.",
        "doi": "10.1038/s41598-017-05012-w",
        "pmcid": "PMC5498489",
        "issn": "2045-2322",
        "publisher": "Nature Publishing Group",
        "publication": "Scientific Reports",
        "publication_date": "2017-07-05",
        "volume": "7",
        "pages": "Art. No. 4643"
    },
    {
        "id": "authors:rsmmt-tzc18",
        "collection": "authors",
        "collection_id": "rsmmt-tzc18",
        "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20230329-883306000.2",
        "type": "article",
        "title": "Cu-Catalyzed Vapor\u2013Liquid\u2013Solid Growth of SiGe Microwire Arrays with Chlorosilane and Chlorogermane Precursors",
        "author": [
            {
                "family_name": "Chen",
                "given_name": "Christopher T.",
                "orcid": "0000-0001-5848-961X",
                "clpid": "Chen-Christopher-T"
            },
            {
                "family_name": "Emmer",
                "given_name": "Hal S.",
                "clpid": "Emmer-Hal-S"
            },
            {
                "family_name": "Aloni",
                "given_name": "Shaul",
                "orcid": "0000-0002-7561-4336",
                "clpid": "Aloni-Shaul"
            },
            {
                "family_name": "Turner-Evans",
                "given_name": "Daniel B.",
                "orcid": "0000-0002-8020-0170",
                "clpid": "Turner-Evans-Daniel-B"
            },
            {
                "family_name": "Atwater",
                "given_name": "Harry A.",
                "orcid": "0000-0001-9435-0201",
                "clpid": "Atwater-H-A"
            }
        ],
        "abstract": "Selected area Cu-catalyzed vapor\u2013liquid\u2212solid growth of SiGe microwires is achieved using chlorosilane and chlorogermane precursors. The composition can be tuned up to 12% Ge with a simultaneous decrease in the growth rate from 7 to 1 \u03bcm min\u20131. Significant changes to the morphology were observed, including tapering and faceting on the sidewalls and along the lengths of the wires. Characterization of axial and radial cross sections with transmission electron microscopy revealed no evidence of defects at facet corners and edges, and the tapering is shown to be due to in situ removal of catalyst material during growth. X-ray diffraction and transmission electron microscopy reveal a Ge-rich crystal at the tip of the wires, strongly suggesting that the Ge incorporation is limited by the crystallization rate.",
        "doi": "10.1021/acs.cgd.5b00097",
        "issn": "1528-7483",
        "publisher": "American Chemical Society",
        "publication": "Crystal Growth and Design",
        "publication_date": "2015-08-05",
        "series_number": "8",
        "volume": "15",
        "issue": "8",
        "pages": "3684-3689"
    }
]