[ { "id": "authors:txbgj-0t704", "collection": "authors", "collection_id": "txbgj-0t704", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20190822-134051535", "type": "book_section", "title": "Transient extreme ultraviolet measurement of element-specific charge transfer dynamics in multiple-material junctions", "book_title": "Quantum Sensing and Nano Electronics and Photonics XVI", "author": [ { "family_name": "Michelsen", "given_name": "Jonathan M.", "clpid": "Michelsen-J-M" }, { "family_name": "Denman", "given_name": "William T.", "clpid": "Denman-W-T" }, { "family_name": "Cushing", "given_name": "Scott K.", "orcid": "0000-0003-3538-2259", "clpid": "Cushing-S-K" } ], "contributor": [ { "family_name": "Razeghi", "given_name": "Manijeh", "clpid": "Razeghi-M" }, { "family_name": "Lewis", "given_name": "Jay S.", "clpid": "Lewis-J-S" }, { "family_name": "Tourni\u00e9", "given_name": "Eric", "clpid": "Tourni\u00e9-E" }, { "family_name": "Khodaparast", "given_name": "Giti A.", "clpid": "Khodaparast-G-A" } ], "abstract": "The absorption of solid state materials in complex photonic and optoelectronic devices overlap in the visible spectrum. Due to the overlap of spectral features, ultrafast measurements of charge carrier dynamics and transport is obscured. Here, the element specificity of transient extreme ultraviolet (XUV) spectroscopy is advanced as a probe for studying photoexcited charge transport in multiple-material junctions. The core-hole excited by the XUV transitions also imparts structural information on to the probed electronic transition. Transient XUV can therefore measure electron and averaged phonon dynamics for each elemental species in a junction. Application to polaron measurement in \u03b1-Fe_2O_3, valley-specific scattering in Si, and charge transfer in a nanoscale Ni-TiO_2-Si junction will be discussed.", "doi": "10.1117/12.2507473", "isbn": "9781510624948", "publisher": "Society of Photo-optical Instrumentation Engineers (SPIE)", "place_of_publication": "Bellingham, WA", "publication_date": "2019-02-01", "pages": "Art. No. 109262A" }, { "id": "authors:45try-m3655", "collection": "authors", "collection_id": "45try-m3655", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20180627-160646605", "type": "book_section", "title": "Valley-dependent Carrier and Lattice Dynamics in Silicon measured by Transient XUV Spectroscopy", "book_title": "2017 Conference on Lasers and Electro-Optics (CLEO)", "author": [ { "family_name": "Cushing", "given_name": "Scott K.", "orcid": "0000-0003-3538-2259", "clpid": "Cushing-S-K" }, { "family_name": "Carneiro", "given_name": "Lucas M.", "clpid": "Carneiro-L-M" }, { "family_name": "Z\u00fcrch", "given_name": "Michael", "clpid": "Z\u00fcrch-M-W" }, { "family_name": "Kraus", "given_name": "Peter M.", "clpid": "Kraus-P-M" }, { "family_name": "Kaplan", "given_name": "Chris J.", "orcid": "0000-0002-5873-9487", "clpid": "Kaplan-C-J" }, { "family_name": "Chang", "given_name": "Hung-Tzu", "orcid": "0000-0001-7378-8212", "clpid": "Chang-Hung-Tzu" }, { "family_name": "Leone", "given_name": "Stephen R.", "orcid": "0000-0003-1819-1338", "clpid": "Leone-S-R" } ], "abstract": "Transient XUV core level spectroscopy is used to resolve photoexcited electron and hole distributions, as well as carrier-phonon and phonon-phonon scattering times, in the \u0393, L, and X valleys of silicon.", "doi": "10.1364/CLEO_AT.2017.ATh3C.5", "isbn": "978-1-943580-27-9", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "2017-05", "pages": "Art. No. ATh3C.5" }, { "id": "authors:m223f-9qy94", "collection": "authors", "collection_id": "m223f-9qy94", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20180627-154700504", "type": "book_section", "title": "Attosecond kinetics of photoexcited germanium", "book_title": "2017 Conference on Lasers and Electro-Optics (CLEO)", "author": [ { "family_name": "Kraus", "given_name": "Peter M.", "clpid": "Kraus-P-M" }, { "family_name": "Kaplan", "given_name": "Christopher J.", "orcid": "0000-0002-5873-9487", "clpid": "Kaplan-C-J" }, { "family_name": "Zuerch", "given_name": "Michael W.", "clpid": "Z\u00fcrch-M-W" }, { "family_name": "Chang", "given_name": "Hung-Tzu", "orcid": "0000-0001-7378-8212", "clpid": "Chang-Hung-Tzu" }, { "family_name": "Jager", "given_name": "Marieke F.", "clpid": "Jager-M-F" }, { "family_name": "Cushing", "given_name": "Scott K.", "orcid": "0000-0003-3538-2259", "clpid": "Cushing-S-K" }, { "family_name": "Borja", "given_name": "Lauren J.", "clpid": "Borja-L-J" }, { "family_name": "Neumark", "given_name": "Daniel M.", "orcid": "0000-0002-3762-9473", "clpid": "Neumark-D-M" }, { "family_name": "Leone", "given_name": "Stephen R.", "orcid": "0000-0003-1819-1338", "clpid": "Leone-S-R" } ], "abstract": "Attosecond transient reflectivity is developed to observe the photoexcitation dynamics in germanium. Attosecond time-resolved measurements of the dielectric function reveal a few-femtosecond collective electronic response time, which renormalizes the Coulomb interaction between the excited carriers.", "doi": "10.1364/CLEO_QELS.2017.FM1D.4", "isbn": "978-1-9435-8027-9", "publisher": "IEEE", "place_of_publication": "Piscataway, NJ", "publication_date": "2017-05", "pages": "Art. No. FM1D.4" }, { "id": "authors:8yr9h-ynk89", "collection": "authors", "collection_id": "8yr9h-ynk89", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20180627-161210002", "type": "book_section", "title": "Electron and Hole Dynamics in Silicon-Germanium Alloy Measured by Attosecond XUV Transient Absorption", "book_title": "International Conference on Ultrafast Phenomena 2016", "author": [ { "family_name": "Z\u00fcrch", "given_name": "M.", "clpid": "Z\u00fcrch-M-W" }, { "family_name": "Borja", "given_name": "L. J.", "clpid": "Borja-L-J" }, { "family_name": "Chang", "given_name": "H.-T.", "orcid": "0000-0001-7378-8212", "clpid": "Chang-Hung-Tzu" }, { "family_name": "Kraus", "given_name": "P. M.", "clpid": "Kraus-P-M" }, { "family_name": "Cushing", "given_name": "S.", "orcid": "0000-0003-3538-2259", "clpid": "Cushing-S-K" }, { "family_name": "Kaplan", "given_name": "C. J.", "orcid": "0000-0002-5873-9487", "clpid": "Kaplan-C-J" }, { "family_name": "Gandman", "given_name": "A.", "clpid": "Gandman-A" }, { "family_name": "Prell", "given_name": "J. S.", "clpid": "Prell-J-S" }, { "family_name": "Pemmaraju", "given_name": "C. D.", "clpid": "Pemmaraju-C-D" }, { "family_name": "Prendergast", "given_name": "D.", "clpid": "Prendergast-D" }, { "family_name": "Neumark", "given_name": "D.", "orcid": "0000-0002-3762-9473", "clpid": "Neumark-D-M" }, { "family_name": "Leone", "given_name": "S. R.", "orcid": "0000-0003-1819-1338", "clpid": "Leone-S-R" } ], "abstract": "Electron-hole dynamics is measured by attosecond transient absorption in silicon-germanium alloy. The germanium atoms act as reporter atoms by time-dependent probing the M_(4,5)-edge, revealing electron and hole dynamics, as well as a new midgap feature.", "doi": "10.1364/UP.2016.UM1A.5", "isbn": "978-1-943580-18-7", "publisher": "Optical Society of America", "place_of_publication": "Washington, DC", "publication_date": "2016-07-11", "pages": "Art. No. UM1A.5" } ]