[
    {
        "id": "authors:bwfjn-vpa27",
        "collection": "authors",
        "collection_id": "bwfjn-vpa27",
        "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:DUWjap65",
        "type": "article",
        "title": "Amorphous Phase in Palladium\u2014Silicon Alloys",
        "author": [
            {
                "family_name": "Duwez",
                "given_name": "Pol",
                "clpid": "Duwez-P"
            },
            {
                "family_name": "Willens",
                "given_name": "R. H.",
                "clpid": "Willens-R-H"
            },
            {
                "family_name": "Crewdson",
                "given_name": "R. C.",
                "clpid": "Crewdson-R-C"
            }
        ],
        "abstract": "By rapid cooling from the melt, an amorphous phase has been obtained in palladium\u2014silicon alloys containing 15 to 23 at.% Si. This phase is stable at room temperature and crystallization cannot be detected after one month at 250\u00b0C. With rates of heating greater than 20\u00b0C/min, rapid crystallization takes place at 400\u00b0C, with a heat release of approximately 1000 cal/mole. The electrical resistivity of an alloy containing 17 at.% Si at room temperature is 2.6 times that of the equilibrium alloy. The resistivity decreases linearly with decreasing temperature and is about 95% of the room-temperature value at 2\u00b0K. Various factors involved in the retention of amorphous phases in rapidly quenched liquid alloys are discussed.",
        "doi": "10.1063/1.1714461",
        "issn": "0021-8979",
        "publisher": "Journal of Applied Physics",
        "publication": "Journal of Applied Physics",
        "publication_date": "1965-07-01",
        "series_number": "7",
        "volume": "36",
        "issue": "7",
        "pages": "2267-2269"
    }
]