[ { "id": "authors:54d0f-v2w82", "collection": "authors", "collection_id": "54d0f-v2w82", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:TOMprb73", "type": "article", "title": "Molecular-Ion Effects in Backscattering from Aligned Silicon Crystals", "author": [ { "family_name": "Tombrello", "given_name": "T. A.", "clpid": "Tombrello-T-A" }, { "family_name": "Caywood", "given_name": "J. M.", "clpid": "Caywood-J-M" } ], "abstract": "We have observed the proton spectra from equal-velocity beams of H+, H2+, and H3+ incident on aligned silicon crystals. Data for both axial and planar channeling show that the dechanneling is successively greater for the H2+ and H3+ ions than for protons. Since the depth at which dechanneling occured can be deduced from the energy spectrum of the backscattered protons, the comparison of the proton spectrum from molecular-ion bombardment with that produced by incident protons allows us to study the history of the motion in the crystal of the interacting protons from a given molecular ion.", "doi": "10.1103/PhysRevB.8.3065", "issn": "0556-2805", "publisher": "Physical Review B", "publication": "Physical Review B", "publication_date": "1973-10-01", "series_number": "7", "volume": "8", "issue": "7", "pages": "3065-3070" }, { "id": "authors:h3rc1-7mg55", "collection": "authors", "collection_id": "h3rc1-7mg55", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:OTTapl72", "type": "article", "title": "Formation of Injecting and Blocking Contacts on High-Resistivity Germanium", "author": [ { "family_name": "Ottaviani", "given_name": "G.", "clpid": "Ottaviani-G" }, { "family_name": "Marrello", "given_name": "V.", "clpid": "Marrello-V" }, { "family_name": "Mayer", "given_name": "J. W.", "clpid": "Mayer-J-W" }, { "family_name": "Nicolet", "given_name": "M-A.", "clpid": "Nicolet-M-A" }, { "family_name": "Caywood", "given_name": "J. M.", "clpid": "Caywood-J-M" } ], "abstract": "The behavior of Al and Sb/Ge/Sb layers evaporated on high-purity Ge and heat treated at 280 \u00b0C is studied by reverse-recovery, double-injection, and nuclear-particle-response techniques. The results indicate that the contacts have the injection and blocking characteristics of p- and n-type material, respectively. Backscattering measurements with 1.8-MeV 4He+ ions show that solid-solid reactions occur.", "doi": "10.1063/1.1654169", "issn": "0003-6951", "publisher": "Applied Physics Letters", "publication": "Applied Physics Letters", "publication_date": "1972-04-15", "series_number": "8", "volume": "20", "issue": "8", "pages": "323-325" }, { "id": "authors:wfezc-z1c86", "collection": "authors", "collection_id": "wfezc-z1c86", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:CAYapl72", "type": "article", "title": "Solid-Phase Growth of Ge from Evaporated Al Layer", "author": [ { "family_name": "Caywood", "given_name": "J. M.", "clpid": "Caywood-J-M" }, { "family_name": "Fern", "given_name": "A. M.", "clpid": "Fern-A-M" }, { "family_name": "McCaldin", "given_name": "J. O.", "clpid": "McCaldin-J-O" }, { "family_name": "Ottaviani", "given_name": "G.", "clpid": "Ottaviani-G" } ], "abstract": "Solid Al was used as a medium from which to grow Ge onto a substrate of crystalline Ge. Evidence for growth was obtained from MeV He+ backscattering, which showed both Ge dissolution and growth can occur at the Ge/Al interface. Backscattering experiments also indicated transport from evaporated Ge through the Al medium to a crystalline Ge substrate. Diodes formed by temperature cycling a structure of n-type Ge/Al showed hole injection into the substrate during reverse-recovery-time measurements, confirming the expectation that Ge growth is present and is heavily p type from incorporation of the Al solvent during growth.", "doi": "10.1063/1.1654170", "issn": "0003-6951", "publisher": "Applied Physics Letters", "publication": "Applied Physics Letters", "publication_date": "1972-04-15", "series_number": "8", "volume": "20", "issue": "8", "pages": "326-327" }, { "id": "authors:q7nqh-60z20", "collection": "authors", "collection_id": "q7nqh-60z20", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20150211-121851771", "type": "article", "title": "Backscattering from crystals using molecular hydrogen ions", "author": [ { "family_name": "Caywood", "given_name": "J. M.", "clpid": "Caywood-J-M" }, { "family_name": "Tombrello", "given_name": "T. A.", "clpid": "Tombrello-T-A" }, { "family_name": "Weaver", "given_name": "T. A.", "clpid": "Weaver-T-A" } ], "abstract": "We have observed backscattering spectra of H^+, H^+_2 and H^+_3 ions incident on Si with the same velocity. Proton spectra from H^+ and H^+_2 ions are essentially the same, but the spectrum from H^+_3 ions is significantly different.", "doi": "10.1016/0375-9601(71)90703-1", "issn": "0375-9601", "publisher": "Elsevier", "publication": "Physics Letters A", "publication_date": "1970-12-06", "series_number": "4", "volume": "37", "issue": "4", "pages": "350-352" }, { "id": "authors:1hf8z-b6s60", "collection": "authors", "collection_id": "1hf8z-b6s60", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20150929-092047338", "type": "article", "title": "Charge transport through \u03b1-monoclinic selenium", "author": [ { "family_name": "Caywood", "given_name": "J. M.", "clpid": "Caywood-J-M" }, { "family_name": "Mead", "given_name": "C. A.", "orcid": "0000-0003-4051-0462", "clpid": "Mead-C-A" } ], "abstract": "The existence of surface barriers on \u03b1-monoclinic selenium crystals has been demonstrated. Photometric measurements indicate electron barrier energies of 1.05 and 1.3 eV, respectively, for Ga and Au contacts. The mobilities of holes and electrons have been measured by a time-of-flight technique to be about 0.2cm^2/Vsec and 1.6cm^2/Vsec, respectively, at room temperature. The hole mobility was found to be limited by traps 0\u00b723 \u00b1 0.01 eV above the valence levels, while the electron mobility is an intrinsic mobility limited by scattering. It was found that in the region of low carrier density (i.e. no space charge effects) the collection efficiency was limited by diffusion of carriers into the metal contact.", "doi": "10.1016/0022-3697(70)90309-4", "issn": "0022-3697", "publisher": "Pergamon Press", "publication": "Journal of Physics and Chemistry of Solids", "publication_date": "1970-05", "series_number": "5", "volume": "31", "issue": "5", "pages": "983-994" }, { "id": "authors:aac7e-d8q10", "collection": "authors", "collection_id": "aac7e-d8q10", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20151007-161136079", "type": "article", "title": "Influence of carrier diffusion effects on window thickness of semiconductor detectors", "author": [ { "family_name": "Caywood", "given_name": "J. M.", "clpid": "Caywood-J-M" }, { "family_name": "Mead", "given_name": "C. A.", "orcid": "0000-0003-4051-0462", "clpid": "Mead-C-A" }, { "family_name": "Mayer", "given_name": "J. W.", "clpid": "Mayer-J-W" } ], "abstract": "Carrier diffusion effects within the depletion region can have a large influence in determining the window thickness x_w of surface barrier detectors. If the surface is assumed to be a perfect sink, carrier diffusion (against the drift field) to the surface leads to x_w \u2248 kT/qE where E is the field at the surface. Calculated values of x_w are in reasonable agreement with previously published values of window thicknesses. Surface preparation techniques can influence the amount of charge lost, as can\nplasma erosion times.", "doi": "10.1016/0029-554X(70)90159-X", "issn": "0029-554X", "publisher": "Elsevier", "publication": "Nuclear Instruments and Methods", "publication_date": "1970-03-15", "series_number": "2", "volume": "79", "issue": "2", "pages": "329-332" }, { "id": "authors:xtd9b-y0242", "collection": "authors", "collection_id": "xtd9b-y0242", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20141216-150707692", "type": "article", "title": "Origin of Field-Dependent Collection Efficiency in Contact-Limited Photoconductors", "author": [ { "family_name": "Caywood", "given_name": "J. M.", "clpid": "Caywood-J-M" }, { "family_name": "Mead", "given_name": "C. A.", "orcid": "0000-0003-4051-0462", "clpid": "Mead-C-A" } ], "abstract": "It has been established that diffusion of photogenerated carriers into the electrode can be an important limitation of the collection efficiency of surface-barrier-limited photoconductors.", "doi": "10.1063/1.1652824", "issn": "0003-6951", "publisher": "American Institute of Physics", "publication": "Applied Physics Letters", "publication_date": "1969-07-01", "series_number": "1", "volume": "15", "issue": "1", "pages": "14-16" }, { "id": "authors:9q7gt-rck96", "collection": "authors", "collection_id": "9q7gt-rck96", "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20151008-165307664", "type": "article", "title": "Origin of Field Dependent Collection Efficiency In Contact Limited Devices", "author": [ { "family_name": "Caywood", "given_name": "J. M.", "clpid": "Caywood-J-M" }, { "family_name": "Mead", "given_name": "C. A.", "orcid": "0000-0003-4051-0462", "clpid": "Mead-C-A" }, { "family_name": "Mayer", "given_name": "J. W.", "clpid": "Mayer-J-W" } ], "abstract": "It has been established that diffusion of photo-generated carriers into the electrode\ncan be an important limitation of the collection efficiency of surface barrier limited\nphoto conductors. The relevance of these results to devices is discussed with\nemphasis on particle detectors.", "issn": "0018-0238", "publisher": "Birkhaeuser", "publication": "Helvetica Physica Acta", "publication_date": "1969-07", "series_number": "7-8", "volume": "42", "issue": "7-8", "pages": "948" } ]