<h1>Bridger, Paul M.</h1>
<h2>Combined from <a href="https://authors.library.caltech.edu">CaltechAUTHORS</a></h2>
<ul>
<li>Hill, C. J. and Bridger, P. M., el al. (1999) <a href="https://resolver.caltech.edu/CaltechAUTHORS:HILapl99">Scanning apertureless microscopy below the diffraction limit: Comparisons between theory and experiment</a>; Applied Physics Letters; Vol. 75; No. 25; 4022-4024; <a href="https://doi.org/10.1063/1.125525">10.1063/1.125525</a></li>
<li>Jones, J. T. and Bridger, P. M., el al. (1999) <a href="https://resolver.caltech.edu/CaltechAUTHORS:JONapl99">Charge storage in CeO2/Si/CeO2/Si(111) structures by electrostatic force microscopy</a>; Applied Physics Letters; Vol. 75; No. 9; 1326-1328; <a href="https://doi.org/10.1063/1.124682">10.1063/1.124682</a></li>
<li>Bridger, P. M. and Bandić, Z. Z., el al. (1999) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BRIjvstb99">Electric force microscopy of induced charges and surface potentials in GaN modified by light and strain</a>; Journal of Vacuum Science and Technology B; Vol. 17; No. 4; 1750-1752; <a href="https://doi.org/10.1116/1.590819">10.1116/1.590819</a></li>
<li>Bridger, P. M. and Bandić, Z. Z., el al. (1999) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BRIapl99">Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy</a>; Applied Physics Letters; Vol. 74; No. 23; 3522-3524; <a href="https://doi.org/10.1063/1.124148">10.1063/1.124148</a></li>
<li>Piquette, E. C. and Bridger, P. M., el al. (1999) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120110-101005142">Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphire</a>; Journal of Vacuum Science and Technology B; Vol. 17; No. 3; 1241-1245; <a href="https://doi.org/10.1116/1.590730">10.1116/1.590730</a></li>
<li>Bandić, Z. Z. and Bridger, P. M., el al. (1999) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BANapl99">High voltage (450 V) GaN Schottky rectifiers</a>; Applied Physics Letters; Vol. 74; No. 9; 1266-1268; <a href="https://doi.org/10.1063/1.123520">10.1063/1.123520</a></li>
<li>Piquette, E. C. and Bridger, P. M., el al. (1999) <a href="https://resolver.caltech.edu/CaltechAUTHORS:PIQmrsijsnr99">Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE</a>; MRS Internet Journal of Nitride Semiconductor Research; Vol. 4S1; Art. No. G3.77</li>
<li>Bridger, P. M. and Bandić, Z. Z., el al. (1998) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BRIapl98">Correlation between the surface defect distribution and minority carrier transport properties in GaN</a>; Applied Physics Letters; Vol. 73; No. 23; 3438-3440; <a href="https://doi.org/10.1063/1.122790">10.1063/1.122790</a></li>
<li>Bandić, Z. Z. and Bridger, P. M., el al. (1998) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BANapl98b">Electron diffusion length and lifetime in p-type GaN</a>; Applied Physics Letters; Vol. 73; No. 22; 3276-3278; <a href="https://doi.org/10.1063/1.122743">10.1063/1.122743</a></li>
</ul>