@article{https://resolver.caltech.edu/CaltechAUTHORS:HILapl99,
    title = "Scanning apertureless microscopy below the diffraction limit: Comparisons between theory and experiment",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:HILapl99",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.125525",
    volume = "75"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:JONapl99,
    title = "Charge storage in CeO2/Si/CeO2/Si(111) structures by electrostatic force microscopy",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:JONapl99",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.124682",
    volume = "75"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:BRIjvstb99,
    title = "Electric force microscopy of induced charges and surface potentials in GaN modified by light and strain",
    journal = "Journal of Vacuum Science and Technology B",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BRIjvstb99",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.590819",
    volume = "17"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:BRIapl99,
    title = "Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BRIapl99",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.124148",
    volume = "74"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:20120110-101005142,
    title = "Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphire",
    journal = "Journal of Vacuum Science and Technology B",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120110-101005142",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.590730",
    volume = "17"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:BANapl99,
    title = "High voltage (450 V) GaN Schottky rectifiers",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BANapl99",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.123520",
    volume = "74"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:PIQmrsijsnr99,
    title = "Effect of Buffer Layer and III/V Ratio on the Surface Morphology of GaN Grown by MBE",
    journal = "MRS Internet Journal of Nitride Semiconductor Research",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:PIQmrsijsnr99",
    id = "record",
    issn = "1092-5783",
    volume = "4S1"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:BRIapl98,
    title = "Correlation between the surface defect distribution and minority carrier transport properties in GaN",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BRIapl98",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.122790",
    volume = "73"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:BANapl98b,
    title = "Electron diffusion length and lifetime in p-type GaN",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BANapl98b",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.122743",
    volume = "73"
}