<h1>Best, John S.</h1>
<h2>Article from <a href="https://authors.library.caltech.edu">CaltechAUTHORS</a></h2>
<ul>
<li>Best, J. S. (1979) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BESjvst79">Lattice-matched heterostructures as Schottky barriers: HgSe/CdSe</a>; Journal of Vacuum Science and Technology; Vol. 16; No. 5; 1130-1133; <a href="https://doi.org/10.1116/1.570174">10.1116/1.570174</a></li>
<li>Scranton, R. A. and Best, J. S., el al. (1977) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120809-111328673">Highly electronegative contacts to compound semiconductors</a>; Journal of Vacuum Science and Technology; Vol. 14; No. 4; 930-934; <a href="https://doi.org/10.1116/1.569391">10.1116/1.569391</a></li>
<li>Best, J. S. and McCaldin, J. O., el al. (1976) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BESapl76">HgSe, a highly electronegative stable metallic contact for semiconductor devices</a>; Applied Physics Letters; Vol. 29; No. 7; 433-434; <a href="https://doi.org/10.1063/1.89109">10.1063/1.89109</a></li>
<li>Best, John S. and McCaldin, J. O. (1975) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BESjap75">Interfacial impurities and the reaction between Si and evaporated Al</a>; Journal of Applied Physics; Vol. 46; No. 9; 4071-4072; <a href="https://doi.org/10.1063/1.322113">10.1063/1.322113</a></li>
</ul>