@article{https://resolver.caltech.edu/CaltechAUTHORS:BRIjvstb99,
    title = "Electric force microscopy of induced charges and surface potentials in GaN modified by light and strain",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1999",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BRIjvstb99",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.590819",
    volume = "17"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:BRIapl99,
    title = "Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy",
    journal = "Applied Physics Letters",
    year = "1999",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BRIapl99",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.124148",
    volume = "74"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:20120110-101005142,
    title = "Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphire",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1999",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120110-101005142",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.590730",
    volume = "17"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:BANapl99,
    title = "High voltage (450 V) GaN Schottky rectifiers",
    journal = "Applied Physics Letters",
    year = "1999",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BANapl99",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.123520",
    volume = "74"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:BRIapl98,
    title = "Correlation between the surface defect distribution and minority carrier transport properties in GaN",
    journal = "Applied Physics Letters",
    year = "1998",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BRIapl98",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.122790",
    volume = "73"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:BANapl98b,
    title = "Electron diffusion length and lifetime in p-type GaN",
    journal = "Applied Physics Letters",
    year = "1998",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BANapl98b",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.122743",
    volume = "73"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:BANapl98,
    title = "Solid phase recrystallization of ZnS thin films on sapphire",
    journal = "Applied Physics Letters",
    year = "1998",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BANapl98",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.121483",
    volume = "72"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:20120130-111304712,
    title = "Growth and characterization of light emitting ZnS/GaN heterostructures",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1997",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120130-111304712",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.589430",
    volume = "15"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:BANjvstb96,
    title = "Microscopic processes during electron cyclotron resonance microwave nitrogen plasma-assisted molecular beam epitaxial growth of GaN/GaAs heterostructures: Experiments and kinetic modeling",
    journal = "Journal of Vacuum Science and Technology B",
    year = "1996",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BANjvstb96",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.588940",
    volume = "14"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:BANapl96,
    title = "Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma-assisted molecular beam epitaxial growth of GaN/GaAs-based heterostructures",
    journal = "Applied Physics Letters",
    year = "1996",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BANapl96",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.115682",
    volume = "68"
}