Bandić, Zvonimir Z.

Article from CaltechAUTHORS

• Bridger, P. M. and Bandić, Z. Z., et el. (1999) Electric force microscopy of induced charges and surface potentials in GaN modified by light and strain; Journal of Vacuum Science and Technology B; Vol. 17; No. 4; 1750-1752; 10.1116/1.590819
• Bridger, P. M. and Bandić, Z. Z., et el. (1999) Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy; Applied Physics Letters; Vol. 74; No. 23; 3522-3524; 10.1063/1.124148
• Piquette, E. C. and Bridger, P. M., et el. (1999) Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphire; Journal of Vacuum Science and Technology B; Vol. 17; No. 3; 1241-1245; 10.1116/1.590730
• Bandić, Z. Z. and Bridger, P. M., et el. (1999) High voltage (450 V) GaN Schottky rectifiers; Applied Physics Letters; Vol. 74; No. 9; 1266-1268; 10.1063/1.123520
• Bridger, P. M. and Bandić, Z. Z., et el. (1998) Correlation between the surface defect distribution and minority carrier transport properties in GaN; Applied Physics Letters; Vol. 73; No. 23; 3438-3440; 10.1063/1.122790
• Bandić, Z. Z. and Bridger, P. M., et el. (1998) Electron diffusion length and lifetime in p-type GaN; Applied Physics Letters; Vol. 73; No. 22; 3276-3278; 10.1063/1.122743
• Bandić, Z. Z. and Piquette, E. C., et el. (1998) Solid phase recrystallization of ZnS thin films on sapphire; Applied Physics Letters; Vol. 72; No. 22; 2862-2864; 10.1063/1.121483
• Piquette, E. C. and Bandić, Z. Z., et el. (1997) Growth and characterization of light emitting ZnS/GaN heterostructures; Journal of Vacuum Science and Technology B; Vol. 15; No. 4; 1148-1152; 10.1116/1.589430
• Bandić, Z. Z. and McGill, T. C., et el. (1996) Microscopic processes during electron cyclotron resonance microwave nitrogen plasma-assisted molecular beam epitaxial growth of GaN/GaAs heterostructures: Experiments and kinetic modeling; Journal of Vacuum Science and Technology B; Vol. 14; No. 4; 2948-2951; 10.1116/1.588940
• Bandić, Z. Z. and Hauenstein, R. J., et el. (1996) Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma-assisted molecular beam epitaxial growth of GaN/GaAs-based heterostructures; Applied Physics Letters; Vol. 68; No. 11; 1510-1512; 10.1063/1.115682