[
    {
        "id": "authors:0banr-bsx83",
        "collection": "authors",
        "collection_id": "0banr-bsx83",
        "cite_using_url": "https://resolver.caltech.edu/CaltechAUTHORS:20150312-080542685",
        "type": "monograph",
        "title": "Characterization of Semiconductors by MeV He+ Backscattering Spectrometry, Channeling and Double Crystal Diffraction",
        "author": [
            {
                "family_name": "Bai",
                "given_name": "G.",
                "clpid": "Bai-G"
            },
            {
                "family_name": "Tsai",
                "given_name": "C.-J.",
                "clpid": "Tsai-C-J"
            },
            {
                "family_name": "Dommann",
                "given_name": "A.",
                "clpid": "Dommann-A"
            },
            {
                "family_name": "Nicolet",
                "given_name": "M-A.",
                "clpid": "Nicolet-M-A"
            },
            {
                "family_name": "Vreeland",
                "given_name": "T., Jr.",
                "clpid": "Vreeland-T-Jr"
            }
        ],
        "abstract": "Double Crystal Diffractometry (DCD) is used to characterize the strain produced by 2 MeV He+ at room temperature to simulate a Rutherford Backscattering Spectrometry (RBS) analysis of bulk Si, Ge and GaAs. The irradiation-induced strain is very small in both Si and Ge and persists after 15 min annealing at 400\u00b0C. The strain is significant in GaAs and largely reversible upon annealing. The capabilities of DCD are further demonstrated on an example involving characterization of a CoSi_2 epilayer grown on a Si(111) substrate whose surface is slightly offset from the (111) plane by an angle \u00f8_s, in the [110] direction. There is a very small misorientation between the Si(111) and CoSi_2(111) planes. The misorientation angle, \u03b1, between these two planes is a fixed fraction 0.017 of the offset angle, \u00f8_s up to \u00f8_s = 4\u00b0. A simple geometrical model is proposed to explain the observation. The model agrees quantitatively with the experiment.",
        "publisher": "Caltech Library",
        "publication_date": "1987"
    }
]