<h1>Bai, Gang</h1>
<h2>Combined from <a href="https://authors.library.caltech.edu">CaltechAUTHORS</a></h2>
<ul>
<li>Bai, G. and Nicolet, M.-A. (1992) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BAIjap92b">Generation and recovery of strain in (28)Si-implanted pseudomorphic GeSi films on Si(100)</a>; Journal of Applied Physics; Vol. 71; No. 9; 4227-4229; <a href="https://doi.org/10.1063/1.350802">10.1063/1.350802</a></li>
<li>Bai, G. and Nicolet, M.-A. (1992) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BAIjap92a">Damage production and annealing in 28Si-implanted CoSi2/Sim(111) heterostructures</a>; Journal of Applied Physics; Vol. 71; No. 2; 670-675; <a href="https://doi.org/10.1063/1.351325">10.1063/1.351325</a></li>
<li>Bai, G. and Nicolet, M.-A. (1991) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BAIjap91c">Defect production in Si(100) by 19F, 28Si, 40Ar, and 131Xe implantation at room temperature</a>; Journal of Applied Physics; Vol. 70; No. 7; 3551-3555; <a href="https://doi.org/10.1063/1.349251">10.1063/1.349251</a></li>
<li>Bai, G. and Nicolet, M.-A. (1991) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BAIjap91b">Defects production and annealing in self-implanted Si</a>; Journal of Applied Physics; Vol. 70; No. 2; 649-655; <a href="https://doi.org/10.1063/1.349668">10.1063/1.349668</a></li>
<li>Bai, G. and Nicolet, M.-A., el al. (1991) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BAIjap91a">Elastic and thermal properties of mesotaxial CoSi2 layers on Si</a>; Journal of Applied Physics; Vol. 69; No. 9; 6451-6455</li>
<li>Mahan, John E. and Geib, Kent M., el al. (1991) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20120509-133504606">Reflection high-energy electron diffraction patterns of CrSi_2 films on (111) silicon</a>; Journal of Vacuum Science and Technology B; Vol. 9; No. 1; 64-68; <a href="https://doi.org/10.1116/1.585791">10.1116/1.585791</a></li>
<li>Bai, G. and Nicolet, M-A., el al. (1990) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BAIapl90">Radiation damage in ReSi2 by a MeV 4He beam</a>; Applied Physics Letters; Vol. 57; No. 16; 1657-1659; <a href="https://doi.org/10.1063/1.104134">10.1063/1.104134</a></li>
<li>Bai, G. and Nicolet, M.-A., el al. (1990) <a href="https://resolver.caltech.edu/CaltechAUTHORS:BAIprb90">Channeling of MeV ions in polyatomic epitaxial films: ReSi2 on Si(100)</a>; Physical Review B; Vol. 41; No. 13; 8603-8607; <a href="https://doi.org/10.1103/PhysRevB.41.8603">10.1103/PhysRevB.41.8603</a></li>
<li>Zhou, P. and Jiang, H. X., el al. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:ZHOprb89">Excitonic transitions in GaAs-AlxGa1-xAs multiple quantum wells affected by interface roughness</a>; Physical Review B; Vol. 40; No. 17; 11862-11867; <a href="https://doi.org/10.1103/PhysRevB.40.11862">10.1103/PhysRevB.40.11862</a></li>
<li>Tandon, J. L. and Leybovich, I. S., el al. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:TANjvstb89">Activation analysis of rapid thermally annealed Si and Mg implanted semi-insulating GaAs</a>; Journal of Vacuum Science and Technology B; Vol. 7; No. 5; 1090-1095; <a href="https://doi.org/10.1116/1.584556">10.1116/1.584556</a></li>
<li>Mii, Y. J. and Karunasini, R. P&gt; G., el al. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:MIIjvstb89">Growth and characterization of doped GaAs/AlGaAs multiple quantum well structures on Si substrates for infrared detection</a>; Journal of Vacuum Science and Technology B; Vol. 7; No. 2; 341-344; <a href="https://doi.org/10.1116/1.584746">10.1116/1.584746</a></li>
<li>Tandon, J. L. and Madok, J. H., el al. (1989) <a href="https://resolver.caltech.edu/CaltechAUTHORS:TANapl89.965">Sequential nature of damage annealing and activation in implanted GaAs</a>; Applied Physics Letters; Vol. 54; No. 5; 448-450; <a href="https://doi.org/10.1063/1.100948">10.1063/1.100948</a></li>
<li>Bai, G. and Jamieson, D. N., el al. (1987) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150304-090025874">Defects Annealing of Si^+ Implanted GaAs at RT and 100°C</a>; ISBN 9780931837609; Materials Modification and Growth Using Ion Beams; 67-72; <a href="https://doi.org/10.1557/PROC-93-67">10.1557/PROC-93-67</a></li>
<li>Bai, G. and Tsai, C.-J., el al. (1987) <a href="https://resolver.caltech.edu/CaltechAUTHORS:20150312-080542685">Characterization of Semiconductors by MeV He+ Backscattering Spectrometry, Channeling and Double Crystal Diffraction</a></li>
</ul>