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    title = "Characterization of Semiconductors by MeV He+ Backscattering Spectrometry, Channeling and Double Crystal Diffraction",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20150312-080542685",
    id = "record"
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@article{https://resolver.caltech.edu/CaltechAUTHORS:BAIjap92b,
    title = "Generation and recovery of strain in (28)Si-implanted pseudomorphic GeSi films on Si(100)",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BAIjap92b",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.350802",
    volume = "71"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:BAIjap92a,
    title = "Damage production and annealing in 28Si-implanted CoSi2/Sim(111) heterostructures",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BAIjap92a",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.351325",
    volume = "71"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:BAIjap91c,
    title = "Defect production in Si(100) by 19F, 28Si, 40Ar, and 131Xe implantation at room temperature",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BAIjap91c",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.349251",
    volume = "70"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:BAIjap91b,
    title = "Defects production and annealing in self-implanted Si",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BAIjap91b",
    id = "record",
    issn = "0021-8979",
    doi = "10.1063/1.349668",
    volume = "70"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:BAIjap91a,
    title = "Elastic and thermal properties of mesotaxial CoSi2 layers on Si",
    journal = "Journal of Applied Physics",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BAIjap91a",
    id = "record",
    issn = "0021-8979",
    volume = "69"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:20120509-133504606,
    title = "Reflection high-energy electron diffraction patterns of CrSi\_2 films on (111) silicon",
    journal = "Journal of Vacuum Science and Technology B",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20120509-133504606",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.585791",
    volume = "9"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:BAIapl90,
    title = "Radiation damage in ReSi2 by a MeV 4He beam",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BAIapl90",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.104134",
    volume = "57"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:BAIprb90,
    title = "Channeling of MeV ions in polyatomic epitaxial films: ReSi2 on Si(100)",
    journal = "Physical Review B",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:BAIprb90",
    id = "record",
    issn = "0163-1829",
    doi = "10.1103/PhysRevB.41.8603",
    volume = "41"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:ZHOprb89,
    title = "Excitonic transitions in GaAs-AlxGa1-xAs multiple quantum wells affected by interface roughness",
    journal = "Physical Review B",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:ZHOprb89",
    id = "record",
    issn = "0163-1829",
    doi = "10.1103/PhysRevB.40.11862",
    volume = "40"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:TANjvstb89,
    title = "Activation analysis of rapid thermally annealed Si and Mg implanted semi-insulating GaAs",
    journal = "Journal of Vacuum Science and Technology B",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:TANjvstb89",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.584556",
    volume = "7"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:MIIjvstb89,
    title = "Growth and characterization of doped GaAs/AlGaAs multiple quantum well structures on Si substrates for infrared detection",
    journal = "Journal of Vacuum Science and Technology B",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:MIIjvstb89",
    id = "record",
    issn = "1071-1023",
    doi = "10.1116/1.584746",
    volume = "7"
}


@article{https://resolver.caltech.edu/CaltechAUTHORS:TANapl89.965,
    title = "Sequential nature of damage annealing and activation in implanted GaAs",
    journal = "Applied Physics Letters",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:TANapl89.965",
    id = "record",
    issn = "0003-6951",
    doi = "10.1063/1.100948",
    volume = "54"
}


@inbook{https://resolver.caltech.edu/CaltechAUTHORS:20150304-090025874,
    title = "Materials Modification and Growth Using Ion Beams",
    chapter = "Defects Annealing of Si^+ Implanted GaAs at RT and 100°C",
    url = "https://resolver.caltech.edu/CaltechAUTHORS:20150304-090025874",
    id = "record",
    isbn = "9780931837609",
    doi = "10.1557/PROC-93-67"
}